DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Response to Amendment
The amendment filed 04/21/2026 has been entered. Claims 1-3, 5-14, 16-20 are currently pending. Claims 4 and 15 have been cancelled. Amendments to the Specification and the claims have overcome the objections and 112(b) rejections set forth in the Non-Final Office Action dated 01/27/2026. However, new 112(b) rejections have been introduced as a result of the amendments.
Claim Objections
Claims 1-3, 5-14 and 16-20 are objected to because of the following informalities:
Claim 1 recites the limitation “wherein the single-beam reflection mode, the dual-beam reflection mode and the absorption mode are determined according to the first working state and the second working state” in lines 24-26. However, this limitation appears to be stated in alternative language in lines 18-21 - “the radiation layer is modulated according to the first working state and the second working state, so that the radiation layer selectively operates in one of a single-beam reflection mode, a dual-beam reflection mode and an absorption mode”. The Examiner therefore suggests deleting the limitation of lines 24-26.
Claim 2 (lines 2-3): “an absorption mode” should read “the absorption mode”.
Claim 11 recites the limitation “wherein the single-beam reflection mode, the dual-beam reflection mode and the absorption mode are determined according to the first working state and the second working state” in lines 28-30. However, this limitation appears to be stated in alternative language in lines 22-25 - “the radiation layer is modulated according to the first working state and the second working state, so that the radiation layer selectively operates in one of a single-beam reflection mode, a dual-beam reflection mode and an absorption mode”. The Examiner therefore suggests deleting the limitation of lines 28-30.
Claim 13 (lines 3): “an absorption mode” should read “the absorption mode”.
Claims 3, 5-10, 12, 14 and 16-20 are objected to due to their dependency.
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 2-3 and 13-14 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 2 (lines 2-4) recites the limitation “wherein the radiation layer operates in one of a reflection mode and an absorption mode according to the first working state and the second working state”. Claim 2 further recites, in lines 6-7, “the reflection mode is a first reflection phase state” and in lines 10-11 “the reflection mode is a second reflection phase state”.
It is not clear how the reflection mode recited in lines 2-4 relates to the single-beam reflection mode and dual-beam reflection mode of claim 1. It is also not clear how the first reflection phase state and the second reflection phase state relate to the single-beam and dual-beam reflection modes of claim 1. Clarification is required.
Claim 3 recites the limitation (lines 5-8) “in the reflection mode …. the radiation layer is configured such that the electromagnetic wave forms one of a single-beam reflection and a dual-beam reflection”. However, it is not clear how the reflection mode of claim 3 relates to the single-beam reflection mode and dual-beam reflection mode recited in claim 1. Clarification is required.
Claim 13 (lines 2-4) recites the limitation “wherein the radiation layer operates in one of a reflection mode and an absorption mode according to the first working state and the second working state”. Claim 13 further recites “the reflection mode is a first reflection phase state” and “the reflection mode is a second reflection phase state”.
It is not clear how the reflection mode recited in lines 2-4 relates to the single-beam reflection mode and dual-beam reflection mode of claim 11. It is also not clear how the first reflection phase state and the second reflection phase state relate to the single-beam and dual-beam reflection modes of claim 11. Clarification is required.
Claim 14 recites the limitation (lines 6-9) “in the reflection mode …. the radiation layer is configured such that the electromagnetic wave forms one of a single-beam reflection and a dual-beam reflection”. However, it is not clear how the reflection mode of claim 14 relates to the single-beam reflection mode and dual-beam reflection mode recited in claim 11. Clarification is required.
Allowable Subject Matter
Claims 1, 5-12 and 16-20 are allowed.
Claims 2-3 and 13-14 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims.
The following is a statement of reasons for the indication of allowable subject matter: The pertinent prior art, as a whole, or in combination, cannot be reasonably construed as adequately teaching or suggesting the elements and features of the claimed invention(s) as arranged, disposed, or provided in the manner as claimed by the Applicant.
For example, regarding claim 1, Zhu (CN 114267957A – of record) discloses (annotated fig. 2 below) “A multifunctional reconfigurable reflectarray (RRA) structure (title, “multifunctional active absorber and reflector”), comprising:
a radiation layer (¶10, “top resonant layer”) configured to receive an electromagnetic wave from an electromagnetic wave source, and comprising:
a first metal member (¶14, “the top resonant layer includes a first metal patch”; P1);
a second metal member (¶14, “the top resonant layer includes a second metal patch”; P2) symmetrically disposed with the first metal member (P1);
a first diode (D1) connected between the first metal member (P1) and the second metal member (P2) (¶14, “the top resonant layer includes a first PIN diode, a second PIN diode”); and
a second diode (D2) coupled to the second metal member (P2); and
a direct current bias layer (fig. 3, bias circuit; ¶75, “each unit includes a top resonant layer, a first dielectric layer, a ground plane, a second dielectric layer, and a first bias circuit, which are stacked sequentially from top to bottom”) comprising:
a first voltage input end electrically connected to the first diode (D1) and providing a first input signal; and
a second voltage input end electrically connected to the second diode (D2) and providing a second input signal (¶¶66-67, “the bias circuit includes a first metal microstrip line s1, a second metal microstrip line s2, a third metal microstrip line s3, a fourth metal microstrip line s4”, “The first metal microstrip line s1, the second metal microstrip line s2, the third metal microstrip line s3, and the fourth metal microstrip line s4 are loaded with bias voltages”);
wherein a first working state of the first diode (D1) and a second working state of the second diode (D2) are respectively controlled by the first input signal and the second input signal, and the radiation layer is modulated according to the first working state and the second working state (¶67, “The magnitude of the bias voltages is used to control the on/off state of the first PIN diode D1, the second PIN diode D2, the third PIN diode D3, and the fourth PIN diode D4”),
so that the radiation layer selectively operates in one of a single-beam reflection mode, and an absorption mode (¶68, “the top resonant layer achieves four independently switchable combinations of absorption and reflection by switching the PIN diodes on and off”. The Zhu device achieves a single-beam reflection of the em wave OR the em wave is absorbed by the radiation layer), wherein the single-beam reflection mode and the absorption mode are determined according to the first working state and the second working state (¶67, “on/off states”);
wherein each of the first metal member (P1) and second metal member (P2) has a rectangular shape (P1 and P2 are both square) and has a feed point”.
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Zhu does not teach, or suggest, the radiation layer operates in one of single-beam reflection mode, a dual-beam reflection mode and an absorption mode (the Zhu structure only operates in two modes: the single-beam reflection mode and absorption mode); a short side of the first metal member has a first feed point, which is electrically connected to the first voltage input end through two first conductive via holes, and a long side of the second metal member has a second feed point, which is coupled to the second diode and electrically connected to the second voltage input end through two second conductive via holes.
Lu et al. (NPL “A 1-bit 14 x 14 dual-beam electronically reconfigurable reflectarray” – of record; “Lu”) discloses (Fig. 1a & b shown below) “A multifunctional reconfigurable reflectarray (RRA) structure (title), comprising:
a radiation layer (top layer with patches) configured to receive an electromagnetic wave from an electromagnetic wave source, and comprising:
a first metal member (first trapezoidal patch);
a second metal member (second trapezoidal patch) symmetrically disposed with the first metal member;
a first diode (PIN diode) connected between the first metal member (first trapezoidal patch) and the second metal member (second trapezoidal patch); and
a direct current bias layer (Section II, “the lower is FR4 with a thickness for biasing circuits”) comprising:
a first voltage input end electrically connected to the first diode and providing a first input signal and a second input signal; and
wherein a first working state and a second working state of the first diode is controlled by the first input signal and the second input signal, and the radiation layer is modulated according to the first working state and the second working state (Section II, “The bias voltages of the PIN diode is controlled to achieve two working states”),
so that the radiation layer operates in a dual-beam reflection mode (title); wherein the dual-beam reflection mode is determined according to the first working state and the second working state (Abstract, “The 180-degree phase difference can be achieved by tuning the working states of the PIN diode”)”.
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Lu does not teach, or suggest, a second diode coupled to the second metal member (there is only one PIN diode connecting the first and second metal member); the radiation layer selectively operates in one of a single-beam reflection mode, a dual-beam reflection mode (only a dual-beam reflection mode) and an absorption mode; wherein the single-beam reflection mode, the dual-beam reflection mode and the absorption mode are is determined according to the first working state and the second working state; wherein each of the first metal member and the second metal member has a rectangular shape (the metal members have a trapezoidal shape), a short side of the first metal member has a first feed point, which is electrically connected to the first voltage input end through two first conductive via holes, and a long side of the second metal member has a second feed point, which is coupled to the second diode and electrically connected to the second voltage input end through two second conductive via holes.
Ren et al. (CN 117276904A – of record; “Ren”) discloses (fig. 1 below) “A multifunctional reconfigurable reflectarray (RRA) structure (¶5, “a reconfigurable electromagnetic metasurface unit that integrates transmission, reflection and absorption functions”), comprising:
a radiation layer (top layer of dielectric layer 1) configured to receive an electromagnetic wave from an electromagnetic wave source, and comprising:
a first metal member (central portion of receive patch 4);
a second metal member (receive patch 4);
a first diode (PIN diode 17) connected between the first metal member (central portion of 4) and the second metal member (patch 4); and
a second diode (PIN diode 16) coupled to the second metal member (4); and
a direct current bias layer (¶36, “the first bias circuit 12 is placed in the middle layer 2 and is connected to receiving patch 4 through the third metal via 9 and controls the on/off state of the first PIN diode 16 and the second PIN diode 17 by changing the DC signal voltage) comprising:
a first voltage input end (via 9) electrically connected to the first diode (17) and providing a first input signal (¶36);
wherein a first working state of the first diode and a second working state of the second diode are respectively controlled by the first input signal, and the radiation layer is modulated according to the first working state and the second working state (¶56, “With both the first PIN diode 16 and the second PIN diode 17 in the on state, the metasurface unit operates in absorption mode,”; ¶57, “The first PIN diode 16 and the second PIN diode 17 are both in the cut-off state, the metasurface unit operates in transmission mode”; ¶58, “The first PIN diode 16 and the second PIN diode 17 are both in the cut-off state, the metasurface unit operates in reflection mode”),
so that the radiation layer selectively operates in one of a single-beam reflection mode (¶58) and an absorption mode (¶56);
wherein the single-beam reflection mode and the absorption mode are determined according to the first working state and the second working state;
wherein each of the first metal member (central portion of 4) and the second metal member (4) has a rectangular shape (the second metal member has a generally rectangular shape)”.
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Ren does not teach, or suggest, the second metal member is symmetrically disposed with the first metal member; and a second voltage input end electrically connected to the second diode and providing a second input signal, wherein the second working state of the second diode is controlled by the second input signal, so that the radiation layer selectively operates in one of a single-beam reflection mode, a dual-beam reflection mode and an absorption mode (the structure of Ren does not have a dual-beam reflection mode); wherein a short side of the first metal member has a first feed point, which is electrically connected to the first voltage input end through two first conductive via holes, and a long side of the second metal member has a second feed point, which is coupled to the second diode and electrically connected to the second voltage input end through two second conductive via holes.
Claims 5-10 are allowable due to their dependency on claim 1.
Regarding claim 11, Zhu discloses a control circuit having a multifunctional reconfigurable reflectarray (RRA) structure (see fig. 2), comprising: the multifunctional RRA structure having the common features of claim 1, as set out above.
Zhu does not teach, or suggest, the radiation layer operates in one of single-beam reflection mode, a dual-beam reflection mode and an absorption mode (the Zhu structure only operates in two modes: the single-beam reflection mode and absorption mode); a short side of the first metal member has a first feed point, which is electrically connected to the first voltage input end through two first conductive via holes, and a long side of the second metal member has a second feed point, which is coupled to the second diode and electrically connected to the second voltage input end through two second conductive via holes.
Lu discloses a control circuit having a multifunctional reconfigurable reflectarray (RRA) structure (see fig. 1), comprising: the multifunctional RRA structure having the common features of claim 1, as set out above.
Lu does not teach, or suggest, a second diode coupled to the second metal member (there is only one PIN diode connecting the first and second metal member); the radiation layer selectively operates in one of a single-beam reflection mode, a dual-beam reflection mode (only a dual-beam reflection mode) and an absorption mode; wherein the single-beam reflection mode, the dual-beam reflection mode and the absorption mode are is determined according to the first working state and the second working state; wherein each of the first metal member and the second metal member has a rectangular shape (the metal members have a trapezoidal shape), a short side of the first metal member has a first feed point, which is electrically connected to the first voltage input end through two first conductive via holes, and a long side of the second metal member has a second feed point, which is coupled to the second diode and electrically connected to the second voltage input end through two second conductive via holes.
Ren discloses a control circuit having a multifunctional reconfigurable reflectarray (RRA) structure (see fig. 1 above), comprising: the multifunctional RRA structure having the common features of claim 1, as set out above.
Ren does not teach, or suggest, the second metal member is symmetrically disposed with the first metal member; and a second voltage input end electrically connected to the second diode and providing a second input signal, wherein the second working state of the second diode is controlled by the second input signal, so that the radiation layer selectively operates in one of a single-beam reflection mode, a dual-beam reflection mode and an absorption mode (the structure of Ren does not have a dual-beam reflection mode); wherein a short side of the first metal member has a first feed point, which is electrically connected to the first voltage input end through two first conductive via holes, and a long side of the second metal member has a second feed point, which is coupled to the second diode and electrically connected to the second voltage input end through two second conductive via holes.
Claims 12 and 16-20 are allowable due to their dependency on claim 11.
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANNA N HAMADYK whose telephone number is (703)756-1672. The examiner can normally be reached 7:30 am - 5:00 pm.
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/ANNA N HAMADYK/Examiner, Art Unit 2845
/DIMARY S LOPEZ CRUZ/Supervisory Patent Examiner, Art Unit 2845
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