Prosecution Insights
Last updated: October 02, 2026
Application No. 18/852,660

SEMICONDUCTOR FILM, AND METHOD FOR PRODUCING SEMICONDUCTOR FILM

Non-Final OA §102
Filed
Sep 30, 2024
Priority
Feb 21, 2023 — nonprovisional of PCTJP2023006147 +1 more
Examiner
ANYA, IGWE U
Art Unit
Tech Center
Assignee
Idemitsu Kosan Co.,ltd.
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
6m
Est. Remaining
81%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
817 granted / 961 resolved
+25.0% vs TC avg
Minimal -4% lift
Without
With
+-3.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
26 currently pending
Career history
970
Total Applications
across all art units

Statute-Specific Performance

§101
1.4%
-38.6% vs TC avg
§103
51.1%
+11.1% vs TC avg
§102
36.6%
-3.4% vs TC avg
§112
6.9%
-33.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 961 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim 6 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Abe et al. (US 2012/0024381). (Claim 6) Abe et al. teach a tin-doped indium oxide sputtering target (paragraphs 99 – 101) for forming an amorphous film of tin and hydrogen-doped indium oxide, wherein the amount of tin atom (Sn) based on the total amount of indium atom (In) and tin atom (Sn) [Sn/ (In+Sn): molar ratio] is 0.000005 to 0.008 (paragraph 158, Table 2). Allowable Subject Matter Claims 2 – 5 and 7 are allowable, because prior does not render obvious: (Claim 2) Sn/(In+Sn) is 0.000005 to 0.008 (without any additional metal) in the solid phase crystallized product, and the concentration of the hydrogen is 0.5E20 to 50E20 atoms/cc. Conclusion Prior art made of record and not relied upon, considered pertinent to applicant's disclosure are listed in PTO – 892 Form. Contact Information Any inquiry concerning this communication or earlier communications from the examiner should be directed to IGWE U ANYA whose telephone number is (571)272-1887. The examiner can normally be reached 8:00 AM - 6:00 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Matthew Landau can be reached at (571) 272- 1731. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /IGWE U ANYA/Primary Examiner, Art Unit 2891 September 17, 2026
Read full office action

Prosecution Timeline

Sep 30, 2024
Application Filed
Sep 21, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12745411
SEMICONDUCTOR DEVICE
3y 0m to grant Granted Sep 22, 2026
Patent 12740076
INTEGRATED CIRCUIT DEVICE
3y 0m to grant Granted Sep 15, 2026
Patent 12740391
CONTACT STRUCTURE, SEMICONDUCTOR DEVICE WITH THE SAME, AND METHOD FOR FABRICATING THE SAME
2y 5m to grant Granted Sep 15, 2026
Patent 12733206
VERTICAL SHIELDED GATE ACCUMULATION FIELD EFFECT TRANSISTOR
3y 6m to grant Granted Sep 08, 2026
Patent 12733417
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
2y 7m to grant Granted Sep 08, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
81%
With Interview (-3.7%)
2y 6m (~6m remaining)
Median Time to Grant
Low
PTA Risk
Based on 961 resolved cases by this examiner. Grant probability derived from career allowance rate.

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