DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention.
Information Disclosure Statement
The information disclosure statement (IDS) submitted on 10/29/2025, 6/17/2025, 4/28/2025, and 1/12/2025 was in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner.
Double Patenting
The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP §§ 706.02(l)(1) - 706.02(l)(3) for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b).
The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/process/file/efs/guidance/eTD-info-I.jsp.
Claims 1, 9 and 15 rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1, 2, and 6 of U.S. Patent No. US 11282677. Although the claims at issue are not identical, they are not patentably distinct from each other because the limitations are anticipated in the patent.
Current Application
PN US 11282677 B2
1. (Currently Amended) A system for plasma processing, the system comprising: a processing chamber comprising a first electrical plane and a second electrical plane; a first bias supply to provide a first asymmetric periodic voltage waveform to the first electrical plane; a second bias supply to provide a second asymmetric periodic voltage waveform to the second electrical plane; a controller to receive an indication of ion current proximate to the first electrical plane and receive an indication of ion current proximate to the second electrical plane and control, based upon the indications of ion current, at least the second bias supply.
9. (New) A method for processing a substrate in a plasma processing chamber, the method comprising: producing a plasma in the plasma processing chamber; applying a first asymmetric periodic voltage waveform to an inner zone in the plasma processing chamber with a first bias supply; and applying a second asymmetric periodic voltage waveform to an outer zone in the plasma processing chamber with a second bias supply; and adjusting, based upon ion current measurements proximate to the inner zone and the outer zone in the plasma processing chamber, one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
15. (New) A non-transitory computer-readable medium comprising instructions stored thereon, for execution by a processor, or for configuring a field programmable gate array, to perform plasma processing, the instructions including instructions to: control a plurality of bias supplies to apply an asymmetric periodic voltage waveform to each of a plurality of zones in the plasma processing chamber; and control one or more of the plurality of bias supplies to adjust, based upon ion current measurements proximate to the plurality of zones in the plasma processing chamber one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
1. A system for plasma processing, the system comprising:
a plasma processing chamber; one or more excitation sources to provide a plasma in the processing chamber;
at least two separate electrical planes arranged within the plasma processing chamber to enable control of plasma sheaths proximate to the at least two separate electrical planes;
a chuck disposed to support a substrate; at least one bias supply coupled to the at least two separate electrical planes, the at least one bias supply is configured to periodically apply a cycle of an asymmetric periodic voltage waveform to each of the electrical planes, and at least one controller configured to: obtain at least one ion current measurement, wherein the at least one ion current measurement is an indication of ion current proximate to a corresponding one of the separate electrical planes; and control, in response to at least one ion current measurement, one or more mechanical features selected from the group consisting of magnets, pressure valves, mass flow controllers, and a physical geometry of the plasma processing chamber.
2. A system for plasma processing, the system comprising a plasma processing chamber; one or more excitation sources to provide a plasma in the processing chamber;
at least two separate electrical planes arranged within the plasma processing chamber to enable control of plasma sheaths proximate to the at least two separate electrical planes; a chuck disposed to support a substrate; at least one bias supply coupled to the at least two separate electrical planes, the at least one bias supply is configured to periodically apply a cycle of an asymmetric periodic voltage waveform to each of the electrical planes; and at least one controller configured to: obtain at least one ion current measurement, wherein the at least one ion current measurement is an indication of ion current proximate to a corresponding one of the separate electrical planes; and control the one or more excitation sources based upon the at least one ion current measurement to control plasma density proximate to the corresponding one of the separate electrical planes.
6. A non-transitory computer-readable medium comprising instructions stored thereon, for execution by a processor, or for configuring a field programmable gate array, to perform plasma processing, the instructions comprising instructions to: periodically apply a cycle of an asymmetric periodic voltage waveform to each of two or more electrical planes arranged within a plasma processing chamber to enable control of plasma sheaths proximate to at least two separate electrical planes; obtain ion current measurements, wherein the ion current measurements include ion current measurements corresponding to each of the separate electrical planes in a plasma processing chamber; and control, in response to at least one ion current measurement, one or more mechanical features selected from the group consisting of magnets, pressure valves, mass flow controllers, and a physical geometry of the plasma processing chamber.
Claims 1-20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-20 of U.S. Patent No. US 12142460 B2. Although the claims at issue are not identical, they are not patentably distinct from each other because the limitations are anticipated in the patent.
Current Application
PN US 12142460 B2
1. (Currently Amended) A system for plasma processing, the system comprising: a processing chamber comprising a first electrical plane and a second electrical plane; a first bias supply to provide a first asymmetric periodic voltage waveform to the first electrical plane; a second bias supply to provide a second asymmetric periodic voltage waveform to the second electrical plane; a controller to receive an indication of ion current proximate to the first electrical plane and receive an indication of ion current proximate to the second electrical plane and control, based upon the indications of ion current, at least the second bias supply.
2. (New) The system of claim 1, wherein the first electrical plane and the second electrical plane are concentric electrical planes.
3. (New) The system of claim 2 wherein the second electrical plane is positioned at an edge of a substrate holder.
4. (New) The system of claim 3, wherein the second electrical plane is embedded in an isolating ring.
5. (New) 5. The system of claim 4, whereon the second electrical plane is positioned below an isolating ring.
6. (New) The system of claim 1, comprising: at least one of a remote plasma source or a source generator to provide a plasma in the processing chamber; and a chuck disposed to support a substrate and positioned between a sheath of the plasma and the electrical planes to enable the electrical planes to alter a portion of the sheath affecting at least one of a trajectory of ions or spatial distribution of energies of ions relative to the substrate.
7. (New) The system of claim 1, wherein the controller includes: monitoring circuitry to measure at least one characteristic of the power that is applied by at least one of the bias supplies; a chamber analysis component configured to determine a characteristic of an environment within the processing chamber based upon at least one measured characteristic of the power obtained from the monitoring circuitry; and control circuitry to adjust the power applied by at least one of the bias supplies to control a portion of the plasma sheath.
8. (New) The system of claim 7, wherein the controller includes at least one of an integrated controller that is integrated within the at least one bias supply or a system controller that controls multiple components.
9. (New) A method for processing a substrate in a plasma processing chamber, the method comprising: producing a plasma in the plasma processing chamber; applying a first asymmetric periodic voltage waveform to an inner zone in the plasma processing chamber with a first bias supply; and applying a second asymmetric periodic voltage waveform to an outer zone in the plasma processing chamber with a second bias supply; and adjusting, based upon ion current measurements proximate to the inner zone and the outer zone in the plasma processing chamber, one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
10. (New) The method of claim 9, wherein applying the second asymmetric periodic voltage waveform to the outer zone includes applying the second asymmetric periodic voltage waveform to a zone that corresponds to an edge of the substrate.
11. (New) The method of claim 10, including applying the second asymmetric periodic voltage waveform to the zone that corresponds to the edge of the substrate to suppress a density of the plasma that is proximate to the edge of the substrate.
12. (New) The method of claim 9, including coupling at least one source generator and one of the bias supplies to a common electrode.
13. (New) The method of claim 9, including applying an asymmetric periodic voltage waveform to one or more top zones to alter corresponding one or more portions of a plasma sheath that are proximate to a top plate of the plasma processing chamber.
14. (New) The method of claim 9 including: measuring a characteristic of each of the asymmetric periodic voltage waveforms that are applied by the bias supplies; calculating a characteristic of an environment within the plasma processing chamber based upon the measured characteristic; and adjusting, based on the characteristic of the environment with in the plasma processing chamber, the asymmetric periodic voltage waveforms to alter the plasma sheath.
15. (New) A non-transitory computer-readable medium comprising instructions stored thereon, for execution by a processor, or for configuring a field programmable gate array, to perform plasma processing, the instructions including instructions to: control a plurality of bias supplies to apply an asymmetric periodic voltage waveform to each of a plurality of zones in the plasma processing chamber; and control one or more of the plurality of bias supplies to adjust, based upon ion current measurements proximate to the plurality of zones in the plasma processing chamber one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
16. (New) The non-transitory computer-readable medium of claim 15, wherein the instructions comprise instructions to: measure a characteristic of the asymmetric periodic voltage waveform that is applied by one or more of the bias supplies to one or more of the zones; calculate a characteristic of an environment within the plasma processing chamber based upon the measured characteristic; and adjust the asymmetric periodic voltage waveform applied by the bias supplies to control the plasma sheaths proximate to the one or more zones.
17. (New) The system of claim 1, wherein the a second electrical plane is proximate to an outer zone outer zone that corresponds to an edge of a substrate.
18. (New) The system of claim 17 wherein the controller is configured to apply the second asymmetric periodic voltage waveform to suppress a density of a plasma that is proximate to the edge of the substrate.
19. (New) The system of claim 1 comprising a source generator coupled to a common node with one of the bias supplies.
20. (New) The system of claim 1, wherein the first bias supply is configured to: measure ion current proximate to the first electrical plane; and control the first asymmetric periodic voltage waveform based upon the measured ion current proximate to the first electrical plane.
1. A system for plasma processing, the system comprising: a processing chamber comprising a first electrical plane proximate to an inner zone in the processing chamber and a second electrical plane proximate to an outer zone in the processing chamber; a first bias supply to provide a first asymmetric periodic voltage waveform to the first electrical plane; a second bias supply to provide a second asymmetric periodic voltage waveform to the second electrical plane; a controller to adjust one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
2. The system of claim 1, wherein the first electrical plane and the second electrical plane are concentric electrical planes.
3. The system of claim 2 wherein the second electrical plane is positioned at an edge of a substrate holder.
4. The system of claim 3, wherein the second electrical plane is embedded in an isolating ring.
5. The system of claim 4, whereon the second electrical plane is positioned below an isolating ring.
6. The system of claim 1, comprising: at least one of a remote plasma source or a source generator to provide a plasma in the processing chamber; and a chuck disposed to support a substrate and positioned between a sheath of the plasma and the electrical planes to enable the electrical planes to alter a portion of the sheath affecting at least one of a trajectory of ions or spatial distribution of energies of ions relative to the substrate.
7. The system of claim 1, wherein the controller includes: monitoring circuitry to measure at least one characteristic of the power that is applied by at least one of the bias supplies; a chamber analysis component configured to determine a characteristic of an environment within the processing chamber based upon the at least one measured characteristic of the power obtained from the monitoring circuitry; and control circuitry to adjust the power applied by the at least one bias supply to control a portion of the plasma sheath.
8. The system of claim 7, wherein the controller includes at least one of an integrated controller that is integrated within the at least one bias supply or a system controller that controls multiple components.
9. A method for processing a substrate in a plasma processing chamber, the method comprising: producing a plasma in the plasma processing chamber; applying a first asymmetric periodic voltage waveform to an inner zone in the plasma processing chamber with a first bias supply; and applying a second asymmetric periodic voltage waveform to an outer zone in the plasma processing chamber with a second bias supply; and adjusting one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
10. The method of claim 9, wherein applying the second asymmetric periodic voltage waveform to the outer zone includes applying the second asymmetric periodic voltage waveform to a zone that corresponds to an edge of the substrate.
11. The method of claim 10, including applying the second asymmetric periodic voltage waveform to the zone that corresponds to the edge of the substrate to suppress a density of the plasma that is proximate to the edge of the substrate.
12. The method of claim 9, including coupling at least one source generator and one of the bias supplies to a common electrode.
13. The method of claim 9, including applying an asymmetric periodic voltage waveform to one or more top zones to alter corresponding one or more portions of a plasma sheath that are proximate to a top plate of the plasma processing chamber.
14. The method of claim 9 including: measuring a characteristic of each of the asymmetric periodic voltage waveforms that are applied by the bias supplies; calculating a characteristic of an environment within the plasma processing chamber based upon the measured characteristic; and adjusting, based on the characteristic of the environment within the plasma processing chamber, the asymmetric periodic voltage waveforms to alter the plasma sheath.
15. A non-transitory computer-readable medium comprising instructions stored thereon, for execution by a processor, or for configuring a field programmable gate array, to perform plasma processing, the instructions including instructions to: control at least one of a remote plasma source or a source generator to produce a plasma in a plasma processing chamber; control a plurality of bias supplies to apply an asymmetric periodic voltage waveform to each of a plurality of zones in the plasma processing chamber; and control one or more of the plurality of bias supplies to adjust one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
16. The non-transitory computer-readable medium of claim 15, wherein the instructions comprise instructions to: measure a characteristic of the asymmetric periodic voltage waveform that is applied by one or more of the bias supplies to one or more of the zones; calculate a characteristic of an environment within the plasma processing chamber based upon the measured characteristic; and adjust the asymmetric periodic voltage waveform applied by the at least one bias supply to control the plasma sheaths proximate to the one or more zones.
See claim 1
17. The system of claim 1, wherein the outer zone corresponds to an edge of a substrate.
18. The system of claim 17 wherein the controller is configured to apply the second asymmetric periodic voltage waveform to suppress a density of the plasma that is proximate to the edge of the substrate.
19. The system of claim 1 comprising a source generator coupled to a common node with one of the bias supplies.
20. The system of claim 1, wherein the first bias supply is configured to: measure ion current proximate to the first electrical plane; and control the first asymmetric periodic voltage waveform based upon the measured ion current proximate to the first electrical plane.
Claims 1-6, 9, 10-13 and 15 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-6, 9-13, 15 of U.S. Patent No. US 12159767 B2. Although the claims at issue are not identical, they are not patentably distinct from each other because the limitations are anticipated in the patent.
Current Application
US 12159767 B2
1. (Currently Amended) A system for plasma processing, the system comprising: a processing chamber comprising a first electrical plane and a second electrical plane; a first bias supply to provide a first asymmetric periodic voltage waveform to the first electrical plane; a second bias supply to provide a second asymmetric periodic voltage waveform to the second electrical plane; a controller to receive an indication of ion current proximate to the first electrical plane and receive an indication of ion current proximate to the second electrical plane and control, based upon the indications of ion current, at least the second bias supply.
2. (New) The system of claim 1, wherein the first electrical plane and the second electrical plane are concentric electrical planes.
3. (New) The system of claim 2 wherein the second electrical plane is positioned at an edge of a substrate holder.
4. (New) The system of claim 3, wherein the second electrical plane is embedded in an isolating ring.
5. (New) 5. The system of claim 4, whereon the second electrical plane is positioned below an isolating ring.
6. (New) The system of claim 1, comprising: at least one of a remote plasma source or a source generator to provide a plasma in the processing chamber; and a chuck disposed to support a substrate and positioned between a sheath of the plasma and the electrical planes to enable the electrical planes to alter a portion of the sheath affecting at least one of a trajectory of ions or spatial distribution of energies of ions relative to the substrate.
9. (New) A method for processing a substrate in a plasma processing chamber, the method comprising: producing a plasma in the plasma processing chamber; applying a first asymmetric periodic voltage waveform to an inner zone in the plasma processing chamber with a first bias supply; and applying a second asymmetric periodic voltage waveform to an outer zone in the plasma processing chamber with a second bias supply; and adjusting, based upon ion current measurements proximate to the inner zone and the outer zone in the plasma processing chamber, one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
10. (New) The method of claim 9, wherein applying the second asymmetric periodic voltage waveform to the outer zone includes applying the second asymmetric periodic voltage waveform to a zone that corresponds to an edge of the substrate.
11. (New) The method of claim 10, including applying the second asymmetric periodic voltage waveform to the zone that corresponds to the edge of the substrate to suppress a density of the plasma that is proximate to the edge of the substrate.
12. (New) The method of claim 9, including coupling at least one source generator and one of the bias supplies to a common electrode.
13. (New) The method of claim 9, including applying an asymmetric periodic voltage waveform to one or more top zones to alter corresponding one or more portions of a plasma sheath that are proximate to a top plate of the plasma processing chamber.
15. (New) A non-transitory computer-readable medium comprising instructions stored thereon, for execution by a processor, or for configuring a field programmable gate array, to perform plasma processing, the instructions including instructions to: control a plurality of bias supplies to apply an asymmetric periodic voltage waveform to each of a plurality of zones in the plasma processing chamber; and control one or more of the plurality of bias supplies to adjust, based upon ion current measurements proximate to the plurality of zones in the plasma processing chamber one or more characteristics of the asymmetric periodic voltage waveforms to alter corresponding portions of a plasma sheath.
1. A system for plasma processing comprising: a processing chamber comprising a first electrical plane and a second electrical plane; a first bias supply coupled to the first electrical plane, the first bias supply configured to: provide a first asymmetric periodic voltage waveform to the first electrical plane; measure ion current proximate to the first electrical plane; and control the first asymmetric periodic voltage waveform based upon the measured ion current proximate to the first electrical plane; and a second bias supply coupled to the second electrical plane, the second bias supply configured to: provide a second asymmetric periodic voltage waveform to the second electrical plane; measure ion current proximate to the second electrical plane; and control the second asymmetric periodic voltage waveform based upon the measured ion current proximate to the second electrical plane.
2. The system of claim 1, wherein the first electrical plane and the second electrical plane are concentric electrical planes.
3. The system of claim 2 wherein the second electrical plane is positioned at an edge of a substrate holder.
4. The system of claim 3, wherein the second electrical plane is embedded in an isolating ring.
5. The system of claim 4, wherein the second electrical plane is positioned below an isolating ring.
6. The system of claim 1, comprising: at least one of a remote plasma source or a source generator to provide a plasma in the processing chamber; and a chuck disposed to support a substrate and positioned between a sheath of the plasma and the electrical planes to enable the electrical planes to alter a portion of the sheath affecting at least one of a trajectory of ions or spatial distribution of energies of ions relative to the substrate.
9. A method for processing a substrate in a plasma processing chamber, the method comprising: producing a plasma in the plasma processing chamber; applying a first asymmetric periodic voltage waveform to an inner zone in the plasma processing chamber with a first bias supply based upon measurements of ion current proximate to the inner zone; and applying a second asymmetric periodic voltage waveform to an outer zone in the plasma processing chamber with a second bias supply based upon measurements of ion current proximate to the outer zone.
10. The method of claim 9, wherein applying the second asymmetric periodic voltage waveform to the outer zone includes applying the second asymmetric periodic voltage waveform to a zone that corresponds to an edge of the substrate.
11. The method of claim 10, including applying the second asymmetric periodic voltage waveform to the zone that corresponds to the edge of the substrate to suppress a density of the plasma that is proximate to the edge of the substrate.
12. The method of claim 9, including coupling at least one source generator and one of the bias supplies to a common electrode.
13. The method of claim 9, including applying an asymmetric periodic voltage waveform to one or more top zones to alter corresponding one or more portions of a plasma sheath that are proximate to a top plate of the plasma processing chamber.
15. A system for plasma processing, the system comprising: a plasma processing chamber comprising a first electrical plane and a second electrical plane; a first bias supply to provide a first asymmetric periodic voltage waveform to the first electrical plane based upon measured ion current proximate to the first electrical plane, wherein the first asymmetric periodic voltage waveform comprises: a negative voltage swing that changes from a first voltage level to a second voltage level; and a negative voltage ramp beginning at the second voltage level; and a second bias supply coupled to provide a second asymmetric periodic voltage waveform to the second electrical plane.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
Brouk (US 20120318456 A1) discloses:
A system for plasma processing (fig 23), the system comprising:
a processing chamber (fig 23) comprising a first electrical plane (2312) and a second electrical plane (2310) within the processing chamber;
a first bias supply to provide asymmetric periodic voltage waveform to the first electrical plane (2336; [0173]; fig 32);
a second bias supply (2334) to provide asymmetric periodic voltage waveform to the second electrical plane;
a controller (2132; fig 21; 2332; fig 23; ) to control at least one of the first bias supply or the second bias supply to control a plasma sheath proximate to at least one of the electrical planes [0219, 0220].
Sriraman (US 20170018411 A1) discloses:
a first electrical plane (104; fig 2a) within the processing chamber (fig 1a);
a second electrical plane (202) within the processing chamber;
a second bias supply (204) coupled to the second electrical plane (202 [0079]);
Any inquiry concerning this communication or earlier communications from the examiner should be directed to RENAN LUQUE whose telephone number is (571)270-1044. The examiner can normally be reached M-F 9:00AM-5:00PM.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jessica Han can be reached on 571-272-2078. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/RENAN LUQUE/ Primary Examiner, Art Unit 2896