Prosecution Insights
Last updated: October 23, 2026
Application No. 18/940,202

GATE DRIVE CIRCUIT, POWER GOOD CIRCUIT, OVERCURRENT DETECTION CIRCUIT, OSCILLATION PREVENTION CIRCUIT, SWITCHING CONTROL CIRCUIT AND SWITCHING POWER SUPPLY DEVICE

Non-Final OA §102§112
Filed
Nov 07, 2024
Priority
May 09, 2022 — JP 2022-076912 +4 more
Examiner
PERENY, TYLER J
Art Unit
2836
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Rohm Co., Ltd.
OA Round
1 (Non-Final)
95%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 95% — above average
95%
Career Allowance Rate
174 granted / 183 resolved
+27.1% vs TC avg
Moderate +6% lift
Without
With
+5.8%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 0m
Avg Prosecution
24 currently pending
Career history
221
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
54.8%
+14.8% vs TC avg
§102
20.7%
-19.3% vs TC avg
§112
21.4%
-18.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 183 resolved cases

Office Action

§102 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-9 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 1 recites the limitation "the low-side pre-driver includes a third high-side transistor and a fourth high-side transistor" in lines 10-11. The claim, as written, lacks clarity as it relates the low-side pre-driver to additional high-side transistors. For examination purposes, examiner has interpreted “the low-side pre-driver includes a third high-side transistor and a fourth high-side transistor” to read “the low-side pre-driver includes a first low-side transistor and a second low-side transistor”. By virtue of their dependency on claim 1, claims 2-9 are also rejected. Election/Restrictions Applicant’s election without traverse of Group 1 (claims 1-9) in the reply filed on 09/17/2026 is acknowledged. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1-2 & 5 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Niikura (US 2022/0200581 A1). Regarding claim 1, as best understood based on the 35 U.S.C. 112(b) rejection made above, Niikura discloses, in figure 1, 2, & 6, a gate drive circuit configured to drive a half bridge in which a high-side transistor to be driven and a low-side transistor to be driven are connected in series between a power supply voltage and a ground potential (high-side transistor MH and low-side transistor ML between a voltage source and GND), the gate drive circuit comprising: a high-side pre-driver configured to drive a gate of the high-side transistor to be driven (Para [0057], “high-side driver 402”); and a low-side pre-driver configured to drive a gate of the low-side transistor to be driven (Para [0057], “low-side driver 404”), wherein the high-side pre-driver includes a first high-side transistor and a second high-side transistor (MP1 and MP2 of high-side driver 402), the low-side pre-driver includes a first low-side transistor and a second low-side transistor (MP1 and MP2 of low-side driver 404) and a delay is provided in at least one of (see figure 2 showing delays between turn-on gate signals) a time period between a first gate signal configured to turn on the first high-side transistor and a second gate signal configured to turn on the second high-side transistor (time period ϕ.sub.3 and ϕ.sub.4 between first turn-on signal V.sub.PG1 to transistor MP1 and the turn-on signal V.sub.PG2 to transistor MP2 of the high-side driver 402) and a time period between a third gate signal configured to turn on the first low-side transistor and a fourth gate signal configured to turn on the second low-side transistor (Para [0059], “high-side driver 402 and the low-side driver 404 each have the same configuration as that of the resonant gate driver circuit 200 described above”…same time period between turn-on signals to respective transistors). Regarding claim 2, Niikura discloses the gate drive circuit according to claim 1, and continues to disclose, in figures 1, 2, & 6, wherein the high-side pre-driver includes a high-side drive unit configured to generate the first gate signal and the second gate signal based on a high-side control input signal (drive unit 206 generates first and second gate signals based on the high-side control input signal H.sub.IN). Regarding claim 5, Niikura discloses the gate drive circuit according to claim 1, and continues to disclose, in figures 1, 2, & 6, wherein the low-side pre-driver includes a low-side drive unit configured to generate the third gate signal and the fourth gate signal based on a low-side control input signal (drive unit 206 generates third and fourth gate signals based on the low-side control input signal L.sub.IN). Allowable Subject Matter Claims 3-4 & 6-9 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Sugie (US 12,556,082 B2) [Figure 2. Discloses An output node of a high-side driver circuit is coupled to the gate of a high-side transistor. The high-side driver circuit is structured to operate in a first mode in which the high-side driver circuit outputs a driving current with a first current amount during a first period from the transition of a high-side control signal HGCTL from the off level to the on level, and outputs the driving current with a second current amount that is smaller than the first current amount during a second period subsequent to the first period.] Any inquiry concerning this communication or earlier communications from the examiner should be directed to TYLER J PERENY whose telephone number is (571)272-4189. The examiner can normally be reached M-F 7:30-5. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Taelor Kim can be reached at (571) 270-7166. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /TYLER J PERENY/ Examiner, Art Unit 2836
Read full office action

Prosecution Timeline

Nov 07, 2024
Application Filed
Oct 02, 2026
Non-Final Rejection mailed — §102, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
95%
Grant Probability
99%
With Interview (+5.8%)
2y 0m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 183 resolved cases by this examiner. Grant probability derived from career allowance rate.

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