DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Information Disclosure Statement
The information disclosure statement (IDS) submitted on 6/12/2025 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner.
Specification
The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed.
The following title is suggested:
“METHOD and PRESSURE SENSOR with POLYSILICON and GLASS COUPLING”
“PRESSURE SENSOR with POLYSILICON and GLASS COUPLING and RELATED METHOD”
Claim Rejections - 35 USC § 112
4. The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 2, 5 & 6 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Regarding claim 2 the limitation “…the polysilicon layer is substantially amorphous. “, is ambiguous and overly broad. With emphasis on the term “substantially”, this is a relative term; with respect to the structure and / or description of the claimed invention, the applicant has not clearly established (i.e dimensional characteristics etc) how “substantially” is defined. Therefore, the claim is rendered indefinite.
Suggested Limitation:
“…wherein the polysilicon layer is amorphous.”.
Regarding claim 5 the limitation “…the phosphorus is substantially uniformly disposed through the polysilicon layer. “, is ambiguous and overly broad. With emphasis on the term “substantially”, this is a relative term; with respect to the structure and / or description of the claimed invention, the applicant has not clearly established (i.e dimensional characteristics etc) how “substantially” is defined. Therefore, the claim is rendered indefinite.
Suggested Limitation:
“…the phosphorus is uniformly disposed through the polysilicon layer.
“…the phosphorus is disposed uniformly through the polysilicon layer.
Regarding claim 6 the limitation “…the polysilicon layer is substantially free of aluminum. “, is ambiguous and overly broad. With emphasis on the term “substantially”, this is a relative term; with respect to the structure and / or description of the claimed invention, the applicant has not clearly established (i.e dimensional characteristics etc) how “substantially” is defined. Therefore, the claim is rendered indefinite.
Suggested limitation:
“…wherein the polysilicon layer contains negligible amounts of aluminum.”
“…wherein the polysilicon layer is free of aluminum.”
Allowable Subject Matter
Claims 1, 3, 4 and 7-20 are allowed.
The following is an examiner’s statement of reasons for allowance:
Tanaka et al (US 20190301956 A1) is analogous to a pressure sensor and method for producing as claimed with respect to a diaphragm, die a metallic glass layer a cavity, and implementation of a polysilicon feature [0072][0074[0083][0089][0135].
Regarding claims 1, 12 & 20, although Tanaka et al describes analogous components & materials known in the art of pressure sensors, neither Tanaka et al nor the listed cited pertinent art anticipate nor render obvious a diaphragm partially defining a first cavity; a top glass layer adjacent to at least a portion of a top surface, the top glass layer partially defining a second cavity adjacent to the diaphragm; and a polysilicon layer at least between a portion of the top surface of the die and a corresponding portion of the top glass layer, the polysilicon layer coupling the top glass layer to the die.
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
US 20260104304 A1 MULTIPLE SENSOR RANGE SINGLE-SILICON DIE STRUCTURE
US 10768064 B2 MEMS pressure gauge sensor and manufacturing method
US 20140239424 A1 CAP BONDING STRUCTURE AND METHOD FOR BACKSIDE ABSOLUTE PRESSURE SENSORS
US 10809141 B2 Dual-cavity pressure sensor die and the method of making same
US 20140091410 A1 Method and Apparatus for Fabricating Piezoresistive Polysilicon by Low-Temperature Metal Induced Crystallization
US 6713828 B1 Monolithic fully-integrated vacuum sealed BiCMOS pressure sensor
US 5437189 A Dual absolute pressure sensor and method thereof
US 5589810 A Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements
Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANDRE J ALLEN whose telephone number is (571)272-2174. The examiner can normally be reached Mon-Fri. 9am-5PM.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kristina M Deherrera can be reached at (303) 297-4237. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/ANDRE J ALLEN/Primary Examiner, Art Unit 2855
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