Prosecution Insights
Last updated: May 29, 2026
Application No. 18/973,310

SEMICONDUCTOR DEVICE

Non-Final OA §102
Filed
Dec 09, 2024
Priority
Apr 12, 2024 — RE 10-2024-0049209 +1 more
Examiner
CHEN, SIBIN
Art Unit
2896
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
9m
Est. Remaining
92%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allowance Rate
889 granted / 1026 resolved
+18.6% vs TC avg
Moderate +5% lift
Without
With
+5.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
25 currently pending
Career history
1041
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
67.0%
+27.0% vs TC avg
§102
27.7%
-12.3% vs TC avg
§112
3.6%
-36.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1026 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kumar (US 2009/0243665). Regarding claim 20, fig. 3 of Kumar discloses a semiconductor device comprising: a target circuit [212-218] including a plurality of elements [212-218], and connected to a first power node supplying a first power voltage [VDD] and a reference node supplying a reference voltage [ground], lower than the first power voltage; and a bias voltage generation circuit [110, 225] configured to output a first bias voltage [from between 291 and 292 to gate of 214] and a second bias voltage [from between 293 and 294 to gate of 216], input to a gate of each of some elements among the plurality of elements, wherein the bias voltage generation circuit includes a plurality of transistors [291-294] connected between the first power node and the reference node, and a plurality of capacitors [274-277] connected to some transistors, among the plurality of transistors, connected in sequence from the reference node. Allowable Subject Matter Claims 1-19 are allowed. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Kim describes an output driving circuit for generating output voltages. Lu describes an amplifier and multi-channel amplifying system. Nguyen describes a high voltage stage for a switching regulator. Any inquiry concerning this communication or earlier communications from the examiner should be directed to SIBIN CHEN whose telephone number is (571)270-5768. The examiner can normally be reached 9:00am - 5:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jessica Han can be reached at (571) 272-2078. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SIBIN CHEN/Primary Examiner, Art Unit 2896
Read full office action

Prosecution Timeline

Dec 09, 2024
Application Filed
Feb 27, 2026
Non-Final Rejection mailed — §102
Apr 06, 2026
Examiner Interview Summary
Apr 06, 2026
Applicant Interview (Telephonic)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12640727
ASYMMETRIC COMMON SOURCE INDUCTANCES TO REDUCE TURN-OFF OVERVOLTAGE IN MOSFETS
2y 1m to grant Granted May 26, 2026
Patent 12633913
GATE DRIVER
2y 2m to grant Granted May 19, 2026
Patent 12627293
SEMICONDUCTOR DEVICE
2y 2m to grant Granted May 12, 2026
Patent 12620978
USE OF PULSE WIDTH MODULATION TO GENERATE EXCITATION PULSES OFFSET FROM SAMPLING PULSES
1y 8m to grant Granted May 05, 2026
Patent 12615034
FET DRIVER CIRCUIT
2y 1m to grant Granted Apr 28, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
92%
With Interview (+5.1%)
2y 3m (~9m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1026 resolved cases by this examiner. Grant probability derived from career allowance rate.

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