Prosecution Insights
Last updated: April 19, 2026
Application No. 18/973,310

SEMICONDUCTOR DEVICE

Non-Final OA §102
Filed
Dec 09, 2024
Examiner
CHEN, SIBIN
Art Unit
2896
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
92%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allow Rate
886 granted / 1023 resolved
+18.6% vs TC avg
Moderate +5% lift
Without
With
+5.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
16 currently pending
Career history
1039
Total Applications
across all art units

Statute-Specific Performance

§101
0.3%
-39.7% vs TC avg
§103
42.2%
+2.2% vs TC avg
§102
40.9%
+0.9% vs TC avg
§112
14.2%
-25.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1023 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kumar (US 2009/0243665). Regarding claim 20, fig. 3 of Kumar discloses a semiconductor device comprising: a target circuit [212-218] including a plurality of elements [212-218], and connected to a first power node supplying a first power voltage [VDD] and a reference node supplying a reference voltage [ground], lower than the first power voltage; and a bias voltage generation circuit [110, 225] configured to output a first bias voltage [from between 291 and 292 to gate of 214] and a second bias voltage [from between 293 and 294 to gate of 216], input to a gate of each of some elements among the plurality of elements, wherein the bias voltage generation circuit includes a plurality of transistors [291-294] connected between the first power node and the reference node, and a plurality of capacitors [274-277] connected to some transistors, among the plurality of transistors, connected in sequence from the reference node. Allowable Subject Matter Claims 1-19 are allowed. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Kim describes an output driving circuit for generating output voltages. Lu describes an amplifier and multi-channel amplifying system. Nguyen describes a high voltage stage for a switching regulator. Any inquiry concerning this communication or earlier communications from the examiner should be directed to SIBIN CHEN whose telephone number is (571)270-5768. The examiner can normally be reached 9:00am - 5:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jessica Han can be reached at (571) 272-2078. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SIBIN CHEN/Primary Examiner, Art Unit 2896
Read full office action

Prosecution Timeline

Dec 09, 2024
Application Filed
Feb 24, 2026
Non-Final Rejection — §102
Apr 06, 2026
Examiner Interview Summary
Apr 06, 2026
Applicant Interview (Telephonic)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12603645
DISCHARGE CONTROL CIRCUIT
2y 5m to grant Granted Apr 14, 2026
Patent 12592685
FLIP-FLOPS AND INTEGRATED CIRCUITS INCLUDING THE SAME
2y 5m to grant Granted Mar 31, 2026
Patent 12587181
CLOCK SIGNAL CIRCUITS
2y 5m to grant Granted Mar 24, 2026
Patent 12587175
REDUCED POWER CONSUMPTION COMPUTE-IN-MEMORY SYSTEM, METHOD OF OPERATING SAME
2y 5m to grant Granted Mar 24, 2026
Patent 12580555
PHASE INTERPOLATOR AND NON-OVERLAPPING CLOCK GENERATOR
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
92%
With Interview (+5.1%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 1023 resolved cases by this examiner. Grant probability derived from career allow rate.

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