Prosecution Insights
Last updated: October 02, 2026
Application No. 18/975,213

OPTICAL ISOLATOR STRUCTURES

Non-Final OA §102§103
Filed
Dec 10, 2024
Priority
Apr 26, 2024 — provisional 63/639,106
Examiner
CHOUDHURY, MUSTAK
Art Unit
Tech Center
Assignee
Huawei Technologies Co., Ltd.
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
8m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allowance Rate
699 granted / 823 resolved
+24.9% vs TC avg
Strong +21% interview lift
Without
With
+21.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
26 currently pending
Career history
833
Total Applications
across all art units

Statute-Specific Performance

§101
1.1%
-38.9% vs TC avg
§103
57.1%
+17.1% vs TC avg
§102
20.1%
-19.9% vs TC avg
§112
15.4%
-24.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 823 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on 01/29/2025 and 07/18/2025 have been considered by the examiner. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102 of this title, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries set forth in Graham v. John Deere Co., 383 U.S. 1, 148 USPQ 459 (1966), that are applied for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. Claims 1-10 are rejected under 35 U.S.C. 103 as being unpatentable over Xu et al. (US PUB 2019/0067806; herein after “Xu”) in view of Zaid et al. (US PUB 2022/0166145; herein after “Zaid”). Xu and Zaid disclose a substrate including a high temperature dielectric material, and a first array of conductive resonators arranged on the substrate. Therefore, they are analogous art. Regarding claim 1, Xu teaches an optical isolator structure for antenna systems (a conductive resonator having a split ring structure, see FIG. 1A and 2A, para. [0065], for antenna array fabricated on a silicon wafer, see FIG. 8A, para. [0038] and [0051]), the structure comprising: a metal sheet (e.g., conductive resonators include a noble metal, see para. [0069] and [0071], FIGS. 9A-C); a first dielectric layer ((i) a first substrate including a high temperature dielectric material) disposed on a first surface of the metal sheet; a second dielectric layer ((iii) a second substrate including the high temperature dielectric material) disposed on a second surface of the metal sheet opposite the first surface of the metal sheet, the first dielectric layer and the second dielectric layer being formed from a first dielectric material (see para. [0072]); at least one first dielectric split-ring structure disposed on the first dielectric layer; and at least one second split-ring structure disposed on the second dielectric layer, the at least one first dielectric split-ring structure and the at least one second dielectric split-ring structure being formed from a second dielectric material (see para. [0018], [0019] and [0056]). Xu fails to teach the second dielectric material having a greater dielectric constant than the first dielectric material. However, in a related field of endeavor Zaid teaches the substrate may have a first dielectric constant value, and at least one high dielectric material has a second dielectric constant value that is greater than the first dielectric constant value (para. [0011]). Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Xu such that at least one high dielectric material has a second dielectric constant value that is greater than the first dielectric constant value as taught by Zaid, for the purpose of increased dielectric constant of the high dielectric materials may improve isolation and improved isolation between transmitting and receiving antenna elements. Regarding claim 2, Xu, according to claim 1 further teaches the second dielectric layer extends generally parallel to the first dielectric layer (i.e., the first substrate and the second substrate are arranged substantially parallel to each other; para. [0018]). Regarding claim 3, Xu, according to claim 1 further teaches the at least one first dielectric split-ring structure and the at least one second dielectric split-ring structure are square split-rings (i.e., The “ring” may be circular in shape (e.g., FIG. 1A and FIG. 2A), but other shapes, such as square or rectangles, are possible (e.g., FIG. 3A), para. [0065]). Regarding claim 4, Xu fails to teach the optical isolator structure is configured to be used in a Multiple Input Multiple Output (MIMO) antenna arrangement. However, in a related field of endeavor Zaid teaches Multiple Inputs Multiple Outputs (MIMO) is a method for multiplying the capacity of a radio link using multiple transmission and receiving antennas to exploit multipath propagation in which full-duplex antennas may provide efficient and flexible utilization of wireless communication resources (para. [0003]). Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Xu such that Multiple Inputs Multiple Outputs (MIMO) for multiplying the capacity of a radio link using multiple transmission and receiving antennas as taught by Zaid, for the purpose of increasing the capacity of the communication networks; and guaranteeing reliable communication. Regarding claim 5, Xu, according to claim 1 further teaches the metal sheet, the first and second dielectric layers, the at least one first dielectric split-ring structure, and the at least one second split-ring structure form a metamaterial isolator structure (see para. [0019]). Regarding claim 6, Xu, according to claim 1 further teaches the first dielectric material of the first and second dielectric layers includes a printed circuit board (PCB) substrate material (i.e., FIG. 2D depicts an equivalent circuit (PCB) for the split ring conductive resonator of FIG. 2A, para. [0067]). Regarding claim 7, Xu fails to teach the PCB substrate material has a dielectric constant from about 3.5 and to about 5.5. However, in a related field of endeavor Zaid teaches Generally, the high dielectric materials 130 and 140 are made of ceramic or other low-loss dielectric material that has a dielectric constant (ε.sub.r) that is higher than that of the substrate 102, which in the case of a PCB is typically in the range of 2.0 to 4.5 (para. [0065]). Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Xu such that a dielectric constant of a PCB is typically in the range of 2.0 to 4.5 as taught by Zaid, for the purpose of increasing the capacity of the communication networks; and guaranteeing reliable communication. Regarding claim 8, Xu fails to teach the second dielectric material of the at least one first dielectric split-ring structure and the at least one second split-ring structure has a dielectric constant of approximately 10. However, in a related field of endeavor Zaid teaches the substrate 102 may be a thin film substrate having … a multi-dielectric layer substrate (para. [0056]). Generally, the high dielectric materials 130 and 140 are made of ceramic or other low-loss dielectric material that has a dielectric constant (ε.sub.r) that is higher than that of the substrate 102, which in the case of a PCB is typically in the range of 2.0 to 4.5 … a material having a dielectric constant of 10 or more may be considered as a high dielectric material (para. [0065]). Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Xu such that one or more dielectric layers may have a material having a dielectric constant of 10 or more may be considered as a high dielectric material for as taught by Zaid, for the purpose of increasing the capacity of the communication networks; and guaranteeing reliable communication. Regarding claim 9, Xu fails to teach the second dielectric material of the at least one first dielectric split-ring structure and the at least one second split-ring structure includes a high dielectric constant printed circuit board (high Dk-PCB) substrate material. However, in a related field of endeavor Zaid teaches the substrate 102 may be a thin film substrate having a thickness thinner than, in most cases, around 600 μm, or thinner than around 500 μm, although thicker substrate structures are possible. Typical thin film substrate materials may be flexible printed circuit board materials such as polyimide foils, polyethylene naphthalate (PEN) foils, polyethylene foils, polyethylene terephthalate (PET) foils, and liquid crystal polymer (LCP) foils. Further substrate materials include polytetrafluoroethylene (PTFE) and other fluorinated polymers, such as perfluoroalkoxy (PFA) and fluorinated ethylene propylene (FEP), Cytop® (amorphous fluorocarbon polymer), and HyRelex materials available from Taconic™. In some embodiments the substrates are a multi-dielectric layer substrate (para. [0056]). Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Xu such that the substrate may be a thin film substrate having may be considered as a high dielectric material available from Taconic™ (high Dk-PCB material) as taught by Zaid, for the purpose of increasing the capacity of the communication networks; and guaranteeing reliable communication. Regarding claim 10, Xu fails to teach the high Dk-PCB substrate material comprises one of Arlon AR1000, Taconic CER-10 and LTCC. However, in a related field of endeavor Zaid teaches the substrate 102 may be a thin film substrate having a thickness thinner than, in most cases, around 600 μm, or thinner than around 500 μm, although thicker substrate structures are possible. Typical thin film substrate materials may be flexible printed circuit board materials such as polyimide foils, polyethylene naphthalate (PEN) foils, polyethylene foils, polyethylene terephthalate (PET) foils, and liquid crystal polymer (LCP) foils. Further substrate materials include polytetrafluoroethylene (PTFE) and other fluorinated polymers, such as perfluoroalkoxy (PFA) and fluorinated ethylene propylene (FEP), Cytop® (amorphous fluorocarbon polymer), and HyRelex materials available from Taconic™. In some embodiments the substrates are a multi-dielectric layer substrate (para. [0056]). Therefore, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the device of Xu such that the substrate may be a thin film substrate having may be considered as a high dielectric material available from Taconic™ (Taconic CER-10) as taught by Zaid, for the purpose of increasing the capacity of the communication networks; and guaranteeing reliable communication. Allowable Subject Matter Claims 11-20 are allowed. The following is an examiner's statement of reasons for allowance: The closest prior art Xu et al. (US PUB 2019/0067806) taken either singularly or in a combination fails to anticipate or fairly suggest the limitations of the independent claims, in such a manner that rejection under 35 U.S.C. 102 or 103 would be proper. The prior art fails to teach a combination of all the claimed features as presented in independent claim 11, for example an optical isolator structure for antenna systems, where at least one second split-ring structure disposed on the second dielectric layer, the at least one second dielectric split-ring structure being formed from a fourth dielectric material, the third dielectric material having a greater dielectric constant than the first dielectric material, the fourth dielectric material having a greater dielectric constant than the second dielectric material. Claims 12-20 depending on allowable base claim 11 are also allowed. Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance”. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Montoya et al. (US 8849072) teaches “FIG. 1 shows an optical device 10, e.g., an isolator, fabricated on substrate 100 and exploits a nonreciprocal coupling from a dielectric waveguide 200 into a surface plasmon waveguide 400 to achieve large isolation in the reverse direction and low insertion loss in the forward direction. FIG. 2 depicts the optical device 10 in cross sectional view with the ridge width. The two waveguides are designed to share a common cladding 320. The dielectric waveguide 200 includes three dielectric layers referred to as dielectric waveguide cladding 220, dielectric waveguide core 240, and the common cladding 320. The surface plasmon waveguide 400 includes three layers referred to as effective surface plasmon cladding 425, surface plasmon core 440, and the common cladding 320”, column 7, lines 35-48. Any inquiry concerning this communication or earlier communications from the examiner should be directed to MUSTAK CHOUDHURY whose telephone number is (571)272-5247. The examiner can normally be reached on M-F 8AM-5PM EST. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Ricky Mack can be reached on (571)272-2333. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MUSTAK CHOUDHURY/Primary Examiner, Art Unit 2872 August 31, 2026
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Prosecution Timeline

Dec 10, 2024
Application Filed
Sep 04, 2026
Non-Final Rejection mailed — §102, §103 (current)

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Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
99%
With Interview (+21.2%)
2y 6m (~8m remaining)
Median Time to Grant
Low
PTA Risk
Based on 823 resolved cases by this examiner. Grant probability derived from career allowance rate.

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