Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
DETAILED ACTION
Claim Rejections - 35 USC § 102
1. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
2. Claim(s) 1, 18-20, is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Zhou et al (Pub. No.: US 2023/0393776).
3. Regarding independent claim 1, Kulkarni et al teaches a system (Fig. 1) comprising: a memory device (Fig. 1, #130); and a processing device (Fig. 1, #117), operatively coupled to the memory device (Fig. 1, #130), configured to perform operations comprising: receiving a request to read data (Fig. 3A, #310A) from a portion of the memory device (Fig. 1, #130); in response to (Fig. 3A, #320 is executed in response to #310) receiving the request to read the data (Fig. 3A, #310A), determining whether the portion of the memory device (Fig. 1, #130) is available for writing data (Fig. 3A, #320A, where P/E cycles is one of memory writing availability indicators); retrieving a read offset value (Fig. 3A, #330A, #340A) based on a temperature associated with the portion of the memory device (Fig. 1, #130) in response to determining whether the portion of the memory device (Fig. 1, #130) is available for writing data (Fig. 3A, #320A, where P/E cycles is one of memory writing availability indicators); and reading the data (Fig. 3A, #350A) from the portion of the memory device (Fig. 1, #130) based on the retrieved read offset value (Fig. 3A, #340A).
4. Regarding claim 18, Zhou et al teaches the memory device (Fig. 1, #130) comprises a three-dimensional (3D) NAND device (paragraph [0036]).
5. Regarding independent claim 19, Zhou et al teaches at least one non-transitory machine-readable storage medium (see Fig. 1, #130) comprising instructions (Fig. 3A) that, when executed by a processing device (Fig. 1, #117), cause the processing device (Fig. 1, #117) to perform operations comprising: receiving a request to read data (Fig. 3A, #310A) from a portion of a memory device (Fig. 1, #130); in response to (Fig. 3A, #320 is executed in response to #310) receiving the request to read the data (Fig. 3A, #310A), determining whether the portion of the memory device (Fig. 1, #130) is available for writing data (Fig. 3A, #320A, where P/E cycles is one of memory writing availability indicators); retrieving a read offset value (Fig. 3A, #330A, #340A)based on a temperature associated with the portion of the memory device (Fig. 1, #130) in response to determining whether the portion of the memory device (Fig. 1, #130) is available for writing data (Fig. 3A, #320A, where P/E cycles is one of memory writing availability indicators); and reading the data (Fig. 3A, #350A) from the portion of the memory device (Fig. 1, #130) based on the retrieved read offset value (Fig. 3A, #340A).
6. Regarding independent claim 20, Zhou et al teaches receiving a request to read data (Fig. 3A, #310A) from a portion of a memory device (Fig. 1, #130); in response to (Fig. 3A, #320 is executed in response to #310) receiving the request to read the data (Fig. 3A, #310A), determining whether the portion of the memory device (Fig. 1, #130) is available for writing data (Fig. 3A, #320A, where P/E cycles is one of memory writing availability indicators); retrieving a read offset value (Fig. 3A, #330A, #340A) based on a temperature associated with the portion of the memory device (Fig. 1, #130) in response to determining whether the portion of the memory device (Fig. 1, #130) is available for writing data (Fig. 3A, #320A, where P/E cycles is one of memory writing availability indicators); and reading the data (Fig. 3A, #350A) from the portion of the memory device (Fig. 1, #130) based on the retrieved read offset value (Fig. 3A, #340A).
Allowable Subject Matter
7. Claim(s) 2-17 is/are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
8. With respect to claims 2, there is no teaching, suggestion, or motivation for combination in the prior art to selectively applying boundary word line (WL) offset values to read one or more WLs of the portion of the memory device in addition to applying inner WL offset values in response to determining whether the portion of the memory device is available for writing data, the boundary WL offset values being computed based on the retrieved read offset value.
9. With respect to dependent claim 3, since these claims are depending on claim 2, therefore claim 3 are allowable subject matter
10. With respect to claims 4, there is no teaching, suggestion, or motivation for combination in the prior art to the portion is determined to be available for writing data in response to determining that the portion comprises an open memory block, wherein the portion is determined to be unavailable for writing data in response to determining that the portion comprises a closed memory block.
11. With respect to dependent claims 5-7, since these claims are depending on claim 4, therefore claims Y-Z are allowable subject matter.
12. With respect to claim 8, there is no teaching, suggestion, or motivation for combination in the prior art to the portion comprises a plurality of word lines (WLs), the plurality of WLs comprising one or more inner WLs including an individual WL and a boundary WL, wherein inner WL offset values are retrieved from an inner WL offset table, and wherein boundary WL offset values are retrieved from a boundary WL offset table.
13. With respect to dependent claims 9-11, since these claims are depending on claim 8, therefore claims 9-11 are allowable subject matter.
14. With respect to claim 12, there is no teaching, suggestion, or motivation for combination in the prior art to wherein the read offset value is retrieved from a boundary word line (WL) offset table.
15. With respect to dependent claims 13-17, since these claims are depending on claim 12, therefore claims 13-17 are allowable subject matter.
Conclusion
16. The prior art made of record and not relied upon is considered pertinent to applicant's disclosure, Ciocchini et al (Pub. No: US 2024/0427500).
Ciocchini et al (Pub. No: US 2024/0427500) shows identify wordline group.
17. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Han Yang whose telephone is (571) 270-3048. The examiner can normally be reached on Monday-Friday 8am-5pm with alternate Friday off. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Richard Elms can be reached on (571) 272-1869. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300.
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HY
09/01/2026
/HAN YANG/
Primary Examiner, Art Unit 2824
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