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The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Double Patenting
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Claims 1-18 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-8, 10-18, and 20 of U.S. Patent No. 12,289,098. Although the claims at issue are not identical, they are not patentably distinct from each other because of the following:
Application 19/073,123
US 12,289,098
Claim 1:
A bandpass filter comprising: a ladder filter circuit comprising a series transversely-excited film bulk acoustic resonator (XBAR) and a shunt XBAR, wherein the series XBAR comprises: a lithium niobate (LN) piezoelectric layer of the series XBAR; and a front side dielectric layer of the series XBAR that comprises a silicon oxide between interleaved fingers of an interdigital transducer of the series XBAR disposed on the LN piezoelectric layer of the series XBAR, wherein the series XBAR has an LN-equivalent thickness teqa that is less than or equal to 305 nanometers, wherein teqa = tp + ka*(tfsd), where tp is a thickness of the LN piezoelectric layer of the series XBAR, ka is a constant for the series XBAR wherein ka = 0.45, and tfsd is a thickness of the front side dielectric layer of the series XBAR, wherein the shunt XBAR comprises: a LN piezoelectric layer of the shunt XBAR; and a front side dielectric layer of the shunt XBAR that comprises a silicon oxide between interleaved fingers of an interdigital transducer of the shunt XBAR disposed on the LN piezoelectric layer of the shunt XBAR, and wherein the shunt XBAR has an LN-equivalent thickness teqr greater than or equal to 310 nanometers and the LN piezoelectric layer of the shunt XBAR has a thickness that is less than 1500 nanometers wherein teqr = tp + kr*(tfsd), where tp is a thickness of the LN piezoelectric layer of the shunt XBAR, kr is a constant for the shunt XBAR wherein kr = 0.57, and tfsd is a thickness of the front side dielectric layer of the shunt XBAR.
Claim 1:
A bandpass filter comprising: a ladder filter circuit comprising a series transversely-excited film bulk acoustic resonator (XBAR) and a shunt XBAR, wherein the series XBAR comprises: a lithium niobate (LN) piezoelectric layer; a front-side dielectric layer of silicon oxide between interleaved fingers of an interdigital transducer disposed on the LN piezoelectric layer of the series XBAR, wherein the series XBAR has an LN-equivalent thickness teqa less than or equal to 305 nanometers, and the LN-equivalent thickness tega of the series XBAR is given by the formula tp+ka*(tfsd), where tp is a thickness of the LN piezoelectric layer of the series XBAR, ka is a constant for the series XBAR and ka=0.45, and tfsd is a thickness of the front side dielectric layer of the series XBAR, wherein the shunt XBAR comprises: a LN piezoelectric layer; a front-side dielectric layer of silicon oxide between interleaved fingers of an interdigital transducer disposed on the LN piezoelectric layer of the shunt XBAR, and wherein the shunt XBAR has an LN-equivalent thickness teqr greater than or equal to 310 nanometers and the LN piezoelectric layer has a thickness that is less than 1500 nanometers, and the LN-equivalent thickness teqr of the shunt XBAR is given by the formula tp+kr*(tfsd), where tp is a thickness of the LN piezoelectric layer of the shunt XBAR, and kr is a constant for the shunt XBAR and kr=0.57, and tfsd is a thickness of the front-side dielectric layer of the shunt XBAR.
Claim 2:
The bandpass filter of claim 1, wherein the LN piezoelectric layer of the series XBAR has a thickness that is less than or equal to the thickness of the LN piezoelectric layer of the shunt XBAR.
Claim 2:
The bandpass filter of claim 1, wherein the LN piezoelectric layer of the series XBAR has a thickness less than or equal to the thickness of the LN piezoelectric layer of the shunt XBAR.
Claim 3:
The bandpass filter of claim 1, wherein the series XBAR is disposed on a first chip and the shunt XBAR is disposed on a second chip.
Claim 3:
The bandpass filter of claim 1, wherein the series XBAR is disposed on a first chip and the shunt XBAR is disposed on a second chip.
Claim 4:
The bandpass filter of claim 1, wherein one or more of the series XBAR and the shunt XBAR are composed of multiple sub-resonators.
Claim 4:
The bandpass filter of claim 1, wherein one or more of the series XBAR and the shunt XBAR are composed of multiple sub-resonators.
Claim 5:
The bandpass filter of claim 4, wherein the multiple sub-resonators have approximately a same length and approximately a same aperture as each other.
Claim 5:
The bandpass filter of claim 4, wherein the multiple sub-resonators have a same length and a same aperture as each other.
Claim 6:
The bandpass filter of claim 1, wherein the LN-equivalent thickness teqr of the shunt XBAR is greater than or equal to 320 nm.
Claim 6:
The bandpass filter of claim 1, wherein the LN piezoelectric layer of the shunt XBAR has an LN-equivalent thickness greater than or equal to 320 nm.
Claim 7:
The bandpass filter of claim 1, wherein the LN-equivalent thickness teqa of the series XBAR is less than 295 nanometers.
Claim 7:
The bandpass filter of claim 1, wherein the LN piezoelectric layer of the series XBAR has an LN-equivalent thickness of less than 295 nanometers.
Claim 8:
The bandpass filter of claim 1, wherein the series XBAR is one of a plurality of series XBARs that each have an LN-equivalent thickness teqa that is less than 295 nanometers.
Claim 8:
The bandpass filter of claim 1, wherein the series XBAR is one of a plurality of series XBARs that each have an LN-equivalent thickness that is less than 295 nanometers.
Claim 9:
The bandpass filter of claim 1, wherein the LN piezoelectric layer of the series XBAR has Euler angles [0°, β, 0°], where 30°≤β≤38°, and wherein the LN piezoelectric layer of the shunt XBAR has Euler angles [0°, β, 0°], where 30°≤β≤38°.
Claim 10:
The bandpass filter of claim 1, wherein the LN piezoelectric layer of the series XBAR has Euler angles [0°, β, 0°], where 30°≤β≤38°, and wherein the LN piezoelectric layer of the shunt XBAR has Euler angles [0°, β, 0°], where 30°≤β≤38°.
Claim 10:
A radio frequency (RF) module comprising: a series bulk acoustic resonator comprising: a lithium niobate (LN) piezoelectric layer of the series bulk acoustic resonator; and a dielectric layer of the series bulk acoustic resonator comprising a silicon oxide between interleaved fingers of an interdigital transducer of the series bulk acoustic resonator, the interleaved fingers of the series bulk acoustic resonator disposed on the LN piezoelectric layer of the series bulk acoustic resonator; and a shunt bulk acoustic resonator comprising: a LN piezoelectric layer of the shunt bulk acoustic resonator, and a dielectric layer of the shunt bulk acoustic resonator comprising a silicon oxide between interleaved fingers of an interdigital transducer of the shunt bulk acoustic resonator, the interleaved fingers of the shunt bulk acoustic resonator disposed on the LN piezoelectric layer of the shunt bulk acoustic resonator, wherein the series bulk acoustic resonator has an LN-equivalent thickness teqa that is less than or equal to 305 nanometers, wherein teqa = tp + ka*(tfsd), where tp is a thickness of LN piezoelectric layer of the series bulk acoustic resonator, ka is a constant for the dielectric layer of silicon oxide of the series bulk acoustic resonator and ka = 0.45, and tfsd is a thickness of the dielectric layer of the series bulk acoustic resonator, and wherein the shunt bulk acoustic resonator has an LN-equivalent thickness teqr greater than or equal to 310 nanometers and a thickness of the LN piezoelectric layer of the shunt bulk acoustic resonator is less than 1500 nanometers, wherein teqr = tp + kr*(tfsd), where tp is a thickness of the LN piezoelectric layer of the shunt bulk acoustic resonator, and kr is a constant for the dielectric layer of silicon oxide for the shunt bulk acoustic resonator and kr = 0.57, and tfsd is a thickness of the dielectric layer of the shunt bulk acoustic resonator.
Claim 11:
A ladder filter circuit comprising: a series bulk acoustic resonator and a shunt bulk acoustic resonator, wherein the series bulk acoustic resonator comprises: a lithium niobate (LN) piezoelectric layer; a dielectric layer of silicon oxide between interleaved fingers of an interdigital transducer disposed on the LN piezoelectric layer of the series bulk acoustic resonator, wherein the series bulk acoustic resonator has an LN-equivalent thickness tega that is less than or equal to 305 nanometers, and the LN-equivalent thickness tega of the series bulk acoustic resonator is given by the formula tp+ka*(tfsd), where tp is a thickness of LN piezoelectric layer of the series bulk acoustic resonator, ka is a constant for the dielectric layer of silicon oxide of the series bulk acoustic resonator and ka=0.45, and tfsd is a thickness of the dielectric layer of the series bulk acoustic resonator, wherein the shunt bulk acoustic resonator comprises: a LN piezoelectric layer; a dielectric layer of silicon oxide between interleaved fingers of an interdigital transducer disposed on the LN piezoelectric layer of the shunt bulk acoustic resonator, and wherein the shunt bulk acoustic resonator has an LN-equivalent thickness teqr greater than or equal to 310 nanometers and a thickness of the LN piezoelectric layer is less than 1500 nanometers, and the LN-equivalent thickness teqr of the shunt bulk acoustic resonator is given by the formula tp+kr*(tfsd), where tp is a thickness of the LN piezoelectric layer of the shunt bulk acoustic resonator, and kr is a constant for the dielectric layer of silicon oxide for the shunt bulk acoustic resonator and kr=0.57, and tfsd is a thickness of the dielectric layer of the shunt bulk acoustic resonator.
Claim 11:
The radio frequency module of claim 10, wherein the LN piezoelectric layer of the series bulk acoustic resonator has a thickness that is less than or equal to the thickness of the LN piezoelectric layer of the shunt bulk acoustic resonator.
Claim 12:
The ladder filter circuit of claim 11, wherein the LN piezoelectric layer of the series bulk acoustic resonator has a thickness less than or equal to the thickness of the LN piezoelectric plate of the shunt bulk acoustic resonator.
Claim 12:
The radio frequency module of claim 10, wherein the series bulk acoustic resonator is disposed on a first chip and the shunt bulk acoustic resonator is disposed on a second chip.
Claim 13:
The ladder filter circuit of claim 11, wherein the series bulk acoustic resonator is disposed on a first chip and the shunt bulk acoustic resonator is disposed on a second chip.
Claim 13:
The radio frequency module of claim 10, wherein one or more of the series bulk acoustic resonator and the shunt bulk acoustic resonator are composed of multiple sub- resonators.
Claim 14:
The ladder filter circuit of claim 11, wherein one or more of the series bulk acoustic resonator and the shunt bulk acoustic resonator are composed of multiple sub-resonators.
Claim 14:
The radio frequency module of claim 13, wherein the multiple sub-resonators have approximately a same length and approximately a same aperture as each other.
Claim 15:
The ladder filter circuit of claim 14, wherein the multiple sub-resonators have a same length and a same aperture as each other.
Claim 15:
The radio frequency module of claim 10, wherein the LN-equivalent thickness teqr of the shunt bulk acoustic resonator is greater than or equal to 320 nm.
Claim 16:
The ladder filter circuit of claim 11, wherein the LN piezoelectric layer of the shunt bulk acoustic resonator has an LN-equivalent thickness that is greater than or equal to 320 nm.
Claim 16:
The radio frequency module of claim 10, wherein the LN-equivalent thickness teqa of the series bulk acoustic resonator is less than 295 nanometers.
Claim 17:
The ladder filter circuit of claim 11, wherein the LN piezoelectric layer of the series bulk acoustic resonator has an LN-equivalent thickness that is less than 295 nanometers.
Claim 17:
The radio frequency module of claim 10, wherein the series bulk acoustic resonator is one of a plurality of series bulk acoustic resonators that each have an LN-equivalent thickness teqa that is less than 295 nanometers.
Claim 18:
The ladder filter circuit of claim 11, wherein the series bulk acoustic resonator is one of a plurality of series bulk acoustic resonators that each have an LN-equivalent thickness that is less than 295 nanometers.
Claim 18:
The radio frequency module of claim 10, wherein the LN piezoelectric layer of the series bulk acoustic resonator has Euler angles [0°, β, 0°], where 30°≤β≤38°, and wherein the LN piezoelectric layer of the shunt bulk acoustic resonator has Euler angles [0°, β, 0°], where 30°≤β≤38°.
Claim 20:
The ladder filter circuit of claim 11, wherein the LN piezoelectric layer of the series bulk acoustic resonator has Euler angles [0°, β, 0°], where 30°≤β≤38°, and wherein the LN piezoelectric layer of the shunt bulk acoustic resonator has Euler angles [0°, β, 0°], where 30°≤β≤38°.
Allowable Subject Matter
Claim 19 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
Claim 20 is allowed.
In regard to Claim 20:
None of the prior art or combination thereof teaches or fairly suggests the following features in combination with the other limitations of the claims:
wherein the series bulk acoustic resonator has an LN-equivalent thickness teqa that is less than or equal to 305 nanometers, wherein teqa = tp + ka*(tfsd), where tp is a thickness of LN piezoelectric layer of the series bulk acoustic resonator, ka is a constant for the dielectric layer of silicon oxide of the series bulk acoustic resonator and ka = 0.45, and tfsd is a thickness of the dielectric layer of the series bulk acoustic resonator; wherein the shunt bulk acoustic resonator has an LN-equivalent thickness teqr greater than or equal to 310 nanometers and a thickness of the LN piezoelectric layer of the shunt bulk acoustic resonator is less than 1500 nanometers, and wherein teqr= tp + kr*(tfsd), where tp is a thickness of the LN piezoelectric layer of the shunt bulk acoustic resonator, and kr is a constant for the dielectric layer of silicon oxide for the shunt bulk acoustic resonator and kr = 0.57, and tfsd is a thickness of the dielectric layer of the shunt bulk acoustic resonator.
However, Plesski et al. (US 2019/0386636) discloses forming a lithium niobate (LN) piezoelectric layer for the series bulk acoustic resonator (Figure 14: 1410A); disposing an interdigital transducer on the LN piezoelectric layer of the series bulk acoustic resonator (Paragraph 0032), the interdigital transducer having interleaved fingers on the LN piezoelectric layer of the series bulk acoustic resonator (Paragraph 0038); and bonding a dielectric layer to the LN piezoelectric layer of the series bulk acoustic resonator (Paragraph 0032), the dielectric layer comprising silicon oxide formed at least between interleaved fingers of the interdigital transducer of the series bulk acoustic resonator (Paragraph 0038), and forming a LN piezoelectric layer for the series bulk acoustic resonator (Figure 14: 1410A); disposing an interdigital transducer on the LN piezoelectric layer of the shunt bulk acoustic resonator (Figure 14: 1420A), the interdigital transducer having interleaved fingers on the LN piezoelectric layer of the shunt bulk acoustic resonator (Paragraph 0032); bonding a dielectric layer of the shunt bulk acoustic resonator (Paragraph 0032), the dielectric layer comprising silicon oxide formed at least between interleaved fingers of an interdigital transducer of the shunt bulk acoustic resonator (Paragraph 0038).
It would not have been obvious to one having ordinary skill in the art to combine any prior art to teach or fairly suggest the features not disclosed by Plesski.
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.
Garcia (US 2020/0287521) discloses an acoustic resonator that includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.
Yantchev et al. (US 2020/0235719) discloses an acoustic resonator that includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.
Plesski (US 10,797,675) discloses an acoustic resonator that includes a substrate and a lithium niobate (LN) plate having parallel front and back surfaces, the back surface attached to a surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to the surfaces of the diaphragm. The Euler angles of the LN plate are 0°, β, 90°, where β is greater than or equal to −15° and less than 0°.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to John W Poos whose telephone number is (571)270-5077. The examiner can normally be reached M-Th 8-5.
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/JOHN W POOS/Primary Examiner, Art Unit 2843
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