Prosecution Insights
Last updated: August 17, 2026
Application No. 19/083,982

IMAGE SENSING DEVICE AND IMAGING SYSTEM INCLUDING THE SAME

Non-Final OA §102
Filed
Mar 19, 2025
Priority
Dec 17, 2024 — RE 10-2024-0188311
Examiner
SELBY, GEVELL V
Art Unit
2638
Tech Center
2600 — Communications
Assignee
SK hynix Inc.
OA Round
1 (Non-Final)
90%
Grant Probability
Favorable
1-2
OA Rounds
10m
Est. Remaining
95%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allowance Rate
1067 granted / 1181 resolved
+28.3% vs TC avg
Minimal +5% lift
Without
With
+4.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
15 currently pending
Career history
1191
Total Applications
across all art units

Statute-Specific Performance

§101
4.3%
-35.7% vs TC avg
§103
38.0%
-2.0% vs TC avg
§102
44.3%
+4.3% vs TC avg
§112
6.2%
-33.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1181 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Specification The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-6, 12, and 15-16 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Takatsuka, US 2021/0183930. In regard to claim 1, Takatsuka, US 2021/0183930, discloses an image sensing device, comprising: a first pixel group and a second pixel group, each of the first pixel group and the second pixel group including a first pixel (see figure 14B, element 100L) that includes a first active region (see figure 14B, element 140) with a first region size and a second pixel (see figure 14B, element 100S) that includes a second active region (see figure 14B, element 140) with a second region size smaller than the first region size (see figure 14B and para 68 and 128-132), wherein each of the first pixel and the second pixel includes an avalanche diode (see figure 1, element 100; para 52-54 and 129), an antireflective layer (see figure 1, element 131) disposed on the avalanche diode, and a light receiving pattern (see figure 14B, element 100L) disposed on the antireflective layer (see para 61 and 68). In regard to claim 2, Takatsuka, US 2021/0183930, discloses the image sensing device of wherein the first pixel of the first pixel group and the first pixel of the second pixel group are disposed to be adjacent to each other, and the second pixel of the first pixel group and the second pixel of the second pixel group are disposed to be adjacent to each other (see figure 14A and 14B). In regard to claim 3, Takatsuka, US 2021/0183930, discloses the image sensing device of claim 1, wherein the avalanche diode includes a first semiconductor region (see figure 1, element 101), a second semiconductor region (see figure 1, element 121), and a substrate portion on the first semiconductor region and the second semiconductor region (see figure 1 and para 67). In regard to claim 4, Takatsuka, US 2021/0183930, discloses the image sensing device of claim 3, wherein each of the first pixel of the first pixel group and the first pixel of the second pixel group further includes an intermediate region (see figure 1, elements 102 or 103) between the first semiconductor region and the second semiconductor region (see para 55-56). In regard to claim 5, Takatsuka, US 2021/0183930, discloses the image sensing device of claim 3, wherein the first pixel further includes a In regard to claim 6, Takatsuka, US 2021/0183930, discloses the image sensing device of claim 1, further comprising: a non-pixel region (see figure 1, element 124) surrounding each pixel, wherein a first trench portion is disposed in the non-pixel region (see para 58). In regard to claim 12, Takatsuka, US 2021/0183930, discloses the image sensing device of claim 1, wherein the first pixel and the second pixel of the first pixel group are electrically connected to each other, and the first pixel and the second pixel of the second pixel group are electrically connected to each other (see para 57 and 68: wires 112 and 114 electrically connect the pixels). In regard to claim 15, Takatsuka, US 2021/0183930, discloses an imaging system, comprising: a light source configured to emit a first light beam to illuminate a target object (see figure 21, element 1011 and para 170-172); and an image sensing device including a first pixel group and a second pixel group, each of the first pixel group and the second pixel group including a first pixel that includes a first active region with a first region size and a second pixel that includes a second active region with a second region size smaller than the first region size (see para 98-99 and 168-170), a first pixel group and a second pixel group, each of the first pixel group and the second pixel group including a first pixel (see figure 14B, element 100L) that includes a first active region (see figure 14B, element 140) with a first region size and a second pixel (see figure 14B, element 100S) that includes a second active region (see figure 14B, element 140) with a second region size smaller than the first region size (see figure 14B and para 68, 98-99, 128-132, and 168-170), wherein each of the first pixel and the second pixel receives a second light beam reflected by the target object under illumination of the first light beam (see para 167-169), wherein the first pixel of the first pixel group and the first pixel of the second pixel group are disposed to be adjacent to each other (see figure 14A and 14B), and wherein the second pixel of the first pixel group and the second pixel of the second pixel group are disposed to be adjacent to each other (see figure 14A and 14B). In regard to claim 16, Takatsuka, US 2021/0183930, discloses the imaging system of claim 15, wherein the first pixel and the second pixel of the first pixel group are electrically connected to each other, and the first pixel and the second pixel of the second pixel group are electrically connected to each other (see para 57 and 68: wires 112 and 114 electrically connect the pixels). Allowable Subject Matter Claims 7-11, 13, 14, and 17-20 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US 2025/0349597, discloses an imaging device with avalanche diodes. US 2024/0088190, discloses an image sensor with avalanche diodes and an antireflection layer. US 2024/0053451, discloses an imaging device with high-sensitivity and low-sensitivity pixels. Any inquiry concerning this communication or earlier communications from the examiner should be directed to GEVELL V SELBY whose telephone number is (571)272-7369. The examiner can normally be reached Monday-Thursday 6 AM - 3:30 PM; Friday 6-10 AM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Lin Ye can be reached at 571-272-7372. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /GEVELL V SELBY/Primary Examiner, Art Unit 2638 gvs
Read full office action

Prosecution Timeline

Mar 19, 2025
Application Filed
Aug 04, 2026
Non-Final Rejection mailed — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
90%
Grant Probability
95%
With Interview (+4.9%)
2y 3m (~10m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1181 resolved cases by this examiner. Grant probability derived from career allowance rate.

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