Prosecution Insights
Last updated: July 17, 2026
Application No. 19/182,516

SOLAR CELL AND PHOTOVOLTAIC MODULE

Non-Final OA §102§112
Filed
Apr 17, 2025
Priority
Apr 30, 2024 — CN 202410544099.5
Examiner
KANG, TAE-SIK
Art Unit
1728
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Zhejiang Jinko Solar Co., Ltd.
OA Round
1 (Non-Final)
58%
Grant Probability
Moderate
1-2
OA Rounds
1y 8m
Est. Remaining
86%
With Interview

Examiner Intelligence

Grants 58% of resolved cases
58%
Career Allowance Rate
324 granted / 559 resolved
-7.0% vs TC avg
Strong +28% interview lift
Without
With
+28.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
27 currently pending
Career history
588
Total Applications
across all art units

Statute-Specific Performance

§101
0.3%
-39.7% vs TC avg
§103
79.5%
+39.5% vs TC avg
§102
8.5%
-31.5% vs TC avg
§112
11.1%
-28.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 559 resolved cases

Office Action

§102 §112
DETAILED ACTION Examiner’s Notes The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Objections Claim 20 is objected to because of the following informality: Claim 20 is objected to because of the informality in the recitation “solar cells according to claim 1” in line 2. Examiner suggests changing the recitation to “solar cells, and each of the solar cells is the solar cell according to claim 1”. Appropriate correction is required. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112: (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor, or for pre-AIA the applicant regards as the invention. Claim 1 recites “the P-type conductive region” in line 5. There is insufficient antecedent basis for this limitation in the claim. For the purpose of this office action, the recitation will be treated as if it recites “a P-type conductive region”. All claims which depend on clam 1 are rejected by virtue of dependency. Appropriate correction is required. Claim 1 recites “the N-type conductive region” in line 8. There is insufficient antecedent basis for this limitation in the claim. For the purpose of this office action, the recitation will be treated as if it recites “a N-type conductive region”. All claims which depend on clam 1 are rejected by virtue of dependency. Appropriate correction is required. Allowable Subject Matter Claims 1-20 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. The following is an examiner’s statement of reasons for allowance: the prior art taken alone or in combination fails to anticipate or fairly suggest the limitations of the claims, in such a manner that a rejection under 35 USC 102 or 103 would be proper. The prior art fails to teach a combination of all the claimed features as presented in independent claim 1. Regarding claim 1, GAO (CN 111613688 A, see English Machine Translation) teaches a solar cell (see the IBC battery cell in Fig. 1) comprising a semiconductor substrate (see the N-type single crystal silicon substrate 1), a first passivation layer (see the back surface aluminum oxide (Al2O3) passivation layer 8) disposed on a side of the P-type conductive region (see the P+ doped layer 6), a second passivation layer (see the back surface silicon nitride (SiNx) passivation layer 9) disposed on a side of the N-type conductive region (see the N+ doped layer 5), a first electrode (see the positive electrode 10), and a second electrode (see the negative electrode 11), and BABA (US 20180076340 A1) teaches a first doping conductive layer (see the transparent conductive layer 15) and a second doping conductive layer (see the transparent conductive layer 17). But, the prior art fails to explicitly teach a combination of all the claimed features including “wherein a length of the first passivation layer along a first direction is greater than a length of the P-type conductive region along the first direction”, as claimed. Contact Information Any inquiry concerning this communication or earlier communications from the examiner should be directed to TAE-SIK KANG whose telephone number is 571-272-3190. The examiner can normally be reached on 9:00am – 5:00pm. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Matthew T. Martin can be reached on 571-270-7871. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /TAE-SIK KANG/ Primary Examiner, Art Unit 1728
Read full office action

Prosecution Timeline

Apr 17, 2025
Application Filed
Jun 02, 2026
Non-Final Rejection mailed — §102, §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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Patent 12665538
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1y 10m to grant Granted Jun 16, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
58%
Grant Probability
86%
With Interview (+28.1%)
2y 11m (~1y 8m remaining)
Median Time to Grant
Low
PTA Risk
Based on 559 resolved cases by this examiner. Grant probability derived from career allowance rate.

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