Prosecution Insights
Last updated: August 17, 2026
Application No. 19/207,982

SEMICONDUCTOR PROCESSING EQUIPMENT

Non-Final OA §102§112
Filed
May 14, 2025
Priority
Oct 31, 2024 — RE 10-2024-0152170
Examiner
KAISER, SYED M
Art Unit
2831
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
6m
Est. Remaining
93%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
603 granted / 698 resolved
+18.4% vs TC avg
Moderate +6% lift
Without
With
+6.2%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 9m
Avg Prosecution
22 currently pending
Career history
712
Total Applications
across all art units

Statute-Specific Performance

§101
1.9%
-38.1% vs TC avg
§103
45.9%
+5.9% vs TC avg
§102
28.9%
-11.1% vs TC avg
§112
16.0%
-24.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 698 resolved cases

Office Action

§102 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Priority Receipt is acknowledged of certified copies of papers required by 37 CFR 1.55. Information Disclosure Statement The information disclosure statement (IDS) submitted on 05/14/2025 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 11-15 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 11 recites the limitation "the first RF power" in line 6. There is insufficient antecedent basis for this limitation in the claim. Claim 11 recites the limitation " the second RF power " in line 8. There is insufficient antecedent basis for this limitation in the claim. Claims 12-15 are also rejected under 35 USC 112(b) as depended from claim 11. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 11-13 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lim et al. (Pub. No.: US 20230109672 A1), hereafter Lim. Regarding claim 11, Lim teaches a semiconductor processing equipment (FIG. 4, plasma process equipment 100) comprising: a chamber housing (FIG. 4 process chamber 110); an electrostatic chuck (FIG. 4, Wafer W) in the chamber housing FIG. 4); a lower electrode below the electrostatic chuck (FIG. 4 electrode 112) in a first direction that is perpendicular to an upper surface of the electrostatic chuck (FIG. 4), and connected to a lower rod providing a first transmission path of the first RF power (FIG. 4, first power supply 161 and paragraph [0003], “RF power may cause arcing in a process chamber in which plasma etching is performed”) ; an upper electrode (FIG. 4, electrode 11) above the electrostatic chuck in the first direction and connected to an upper rod (FIG. 4) providing a second transmission path of the second RF power (FIG. 4, second power supply 141 and paragraph [0003], “RF power may cause arcing in a process chamber in which plasma etching is performed”); a first voltage and current (VI) sensor (FIG. 4, sensor 160) coupled to the lower rod in the chamber housing; and a second VI sensor (VI sensor 140) coupled to the upper rod in the chamber housing (FIG. 4). Regarding claim 12, Lim further teaches the first VI sensor is in direct contact with the lower electrode (FIG. 4, electrode 112 direct contact with VI sensor 160 ), and the second VI sensor is in direct contact with the upper electrode (FIG. 4, electrode 111 direct contact with VI sensor 140). Regarding claim 13, Lim further teaches the first VI sensor is separated from the lower electrode by a first gap (FIG. 4, gap between 160 and 112) , and the second VI sensor is separated from the upper electrode by a second gap (gap (FIG. 4, gap between 140 and 111) Allowable Subject Matter Claims 14-15 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims and if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph. The following is a statement of reasons for the indication of allowable subject matter: Regarding claim 14, prior arts whether stand alone or in combination fail to teach or reasonably suggest the vehicle cabin lighting system according to Claim 1, comprising “wherein the second VI sensor includes a second coil having a toroidal shape and surrounding the upper rod, a second floating electrode having a cylindrical shape and surrounding the upper rod, and at least one second insulating layer in which the second coil and the second floating electrode are embedded”, as required in combination with the other limitations of the claim. Dependent claim 15 is also objected by virtue of its dependency. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to SYED M KAISER whose telephone number is (571)272-9612. The examiner can normally be reached M-F 9 a.m.-6 p.m.. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Abdullah Riyami can be reached at 571-270-3119. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SYED M KAISER/Examiner, Art Unit 2831 /ABDULLAH A RIYAMI/Supervisory Patent Examiner, Art Unit 2831
Read full office action

Prosecution Timeline

May 14, 2025
Application Filed
Jul 30, 2026
Non-Final Rejection mailed — §102, §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
93%
With Interview (+6.2%)
1y 9m (~6m remaining)
Median Time to Grant
Low
PTA Risk
Based on 698 resolved cases by this examiner. Grant probability derived from career allowance rate.

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