DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
Information Disclosure Statement
The information disclosure statements filed on 07 November 2025, 21 July 2026 and 09 September 2026 are in compliance with the provisions of 37 CFR 1.97 and 37 CFR 1.98. Accordingly, these information disclosure statements have been considered by the examiner.
The information disclosure statement (IDS) filed on 07 August 2025 fails to comply with 37 CFR 1.98(a)(2), which requires a legible copy of each cited foreign patent document; each non-patent literature publication or that portion which caused it to be listed; and all other information or that portion which caused it to be listed. Note that legible copies of foreign patent document 11 and non-patent literature documents 34-36 have not been submitted. It has been placed in the application file, but the information referred to therein with respect to foreign patent document 11 and non-patent literature documents 34-36 has not been considered.
Applicant is advised that the date of any re-submission of any item of information contained in this information disclosure statement or the submission of any missing element(s) will be the date of submission for purposes of determining compliance with the requirements based on the time of filing the statement, including all certification requirements for statements under 37 CFR 1.97(e). See MPEP § 609.05(a).
Drawings
The drawings are objected to because of the following informalities:
a. In FIG. 2, reference character 212 should be drawn to the “media facing surface (MFS)” in order to be consistent with the remainder of the disclosure.
b. In FIG. 2, left-most reference character 254 should be removed as it is not drawn to the gap “between the main pole 220 and the trailing shield 240” as detailed in line 6 of paragraph [0037].
c. In FIG. 6C, “Strusture” should be spelled --Structure--.
Corrected drawing sheets in compliance with 37 CFR 1.121(d) are required in reply to the Office action to avoid abandonment of the application. Any amended replacement drawing sheet should include all of the figures appearing on the immediate prior version of the sheet, even if only one figure is being amended. Each drawing sheet submitted after the filing date of an application must be labeled in the top margin as either “Replacement Sheet” or “New Sheet” pursuant to 37 CFR 1.121(d). If the changes are not accepted by the examiner, the applicant will be notified and informed of any required corrective action in the next Office action. The objection to the drawings will not be held in abeyance.
Specification
The disclosure is objected to because of the following informalities:
a. In line 3 of claim 1, “a layer, the layer” should be changed to --a first layer, the first layer-- in order to improve clarity and prevent confusion with other layer(s) in the claim(s).
b. In lines 5-6 of claim 1, “the square root of 3” should be changed to --a square root of 3-- for better clarity and antecedence.
c. In line 1 of claim 2, “the layer” should be changed to --the first layer-- in order to be consistent with the requested change in paragraph 5a, supra.
d. In line 1 of claim 3, “the layer” should be changed to --the first layer-- in order to be consistent with the requested change in paragraph 5a, supra.
e. In lines 5-6 of claim 15, “selected from the group of: W, AI, and Si” should be corrected to read --selected from the group consisting of: W, AI, and Si-- in order to be in proper Markush group claim format.
f. In line 3 of claim 16, “Al10Nb40Ti50” should be changed to --Al10Nb40Ti50-- in order to be consistent with the remainder of the disclosure.
g. In line 3 of claim 21, “Al10Nb40Ti50” should be changed to --Al10Nb40Ti50-- in order to be consistent with the remainder of the disclosure.
h. In line 2 of claim 25, “the square root of 3” should be changed to --a square root of 3-- for better clarity and antecedence.
Appropriate correction is required.
The lengthy specification has not been checked to the extent necessary to determine the presence of all possible minor errors. Applicant’s cooperation is requested in correcting any errors of which applicant may become aware in the specification.
Double Patenting
The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969).
A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b).
The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13.
The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer.
Claims 11-24 and 27-29 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-4, 8, 9, 11-14, 22 and 23 of U.S. Patent No. 11,763,973. Although the claims at issue are not identical, they are not patentably distinct from each other because pending claims 11-24 and 27-29 are anticipated by patented claims 1-4, 8, 9, 11-14, 22 and 23 of U.S. Patent No. 11,763,973 as follows:
With respect to pending claim 11, U.S. Patent No. 11,763,973 claims a spin-orbit torque (SOT) device (lines 1-2 of patented claim 1, or lines 1-2 of patented claim 13), comprising: a bismuth antimony (BiSb) layer having a (012) orientation (lines 13-14 of patented claim 1, or lines 16-17 of patented claim 13); and a multilayer structure (lines 1-3 of patented claim 2, or lines 1-2 of patented claim 14) disposed in contact with the BiSb layer (lines 15-16 of patented claim 1, i.e., “configured to reduce migration of Sb in the BiSb layer”), the multilayer structure comprising: a sublayer comprising one or more materials selected from the group consisting of: a tetragonal (001) material having an a-axis lattice parameter in the range of about 4.49 Å to about 4.69 Å, a body-centered cubic (bcc) or B2 (100) material, a face-centered cubic (fcc) (100) material having a lattice parameter in the range of about 4.20 Å to about 4.70 Å, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, an amorphous metallic material, and a layered combination of one or more of any of the preceding materials (lines 1-11 of patented claim 2 include many of the materials listed above, or lines 6-14 of patented claim 13 include many of the materials listed above).
With respect to pending claim 12, U.S. Patent No. 11,763,973 claims wherein the multilayer structure is a buffer layer or an interlayer (lines 1-2 of patented claim 2, i.e., “buffer layer further comprises one or more sublayers in addition to the amorphous sublayer”).
With respect to pending claim 13, U.S. Patent No. 11,763,973 claims the SOT device further comprising one or more Bi layers (lines 19-21 of patented claim 13).
With respect to pending claim 14, U.S. Patent No. 11,763,973 claims wherein the sublayer comprises a carbide, a nitride, or an oxide (lines 7-9 of patented claim 1, lines 12-14 of patented claim 13).
With respect to pending claim 15, U.S. Patent No. 11,763,973 claims wherein the sublayer comprises the fcc (100) material, and wherein the fcc (100) material is selected from the group consisting of: FeO, CoO, ZrO, MgO, TiO, ScN, TiN, NbN, ZrN, HfN, TaN, ScC, TiC, NbC, ZrC, HfC, TaC, WC, CoO, SIC, GaN, FeN, ZnO, MoZr10, MoNi20, NbZr20, and composite combinations thereof with one or more elements selected from the group of: W, AI, and Si (lines 1-8 of patented claim 4).
With respect to pending claim 16, U.S. Patent No. 11,763,973 claims wherein, when the sublayer comprises the bcc (100) material, the bcc (100) material is selected from the group consisting of: V, Nb, Mo, W, Ta, WTi50, Al10Nb40Ti50, and Cr (lines 1-5 of patented claim 3).
With respect to pending claim 17, U.S. Patent No. 11,763,973 claims a magnetic recording head comprising the SOT device (lines 1-3 of patented claim 11, or lines 1-3 of patented claim 22).
With respect to pending claim 18, U.S. Patent No. 11,763,973 claims a magnetic recording device comprising the magnetic recording head (lines 1-3 of patented claim 11, or lines 1-3 of patented claim 22).
With respect to pending claim 19, U.S. Patent No. 11,763,973 claims a magneto-resistive memory comprising the SOT device (lines 1-3 of patented claim 12, or lines 1-3 of patented claim 23).
With respect to pending claim 20, U.S. Patent No. 11,763,973 claims a spin-orbit torque (SOT) device (lines 1-2 of patented claim 1, or lines 1-2 of patented claim 13), comprising: a multilayer structure (lines 1-3 of patented claim 2, or lines 1-2 of patented claim 14), the multilayer structure comprising a first sublayer, the first sublayer comprising one of: (a) a material having: a fcc structure, a nearest neighbor XRD diffraction peak with d-spacing equal to about 2.0 Å to about 2.2 Å, and a lattice constant of a crystal structure between about 3.5 Å and 3.71 Å; or (b) one or more materials selected from the group consisting of: a tetragonal (001) material having an a-axis lattice parameter in the range of about 4.49 Å to about 4.69 Å, a body-centered cubic (bcc) or B2 (100) material, a face-centered cubic (fcc) (100) material having a lattice parameter in the range of about 4.20 Å to about 4.70 Å, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, an amorphous metallic material, and a layered combination of one or more of any of the preceding materials (lines 1-11 of patented claim 2 include many of the materials listed above, or lines 6-14 of patented claim 13 include many of the materials listed above); and a bismuth antimony (BiSb) layer (line 13 of patented claim 1, or line 16 of patented claim 13) disposed in contact with the multilayer structure (lines 15-16 of patented claim 1, i.e., “configured to reduce migration of Sb in the BiSb layer”), the BiSb layer having a (012) orientation (line 14 of patented claim 1, or lines 16-17 of patented claim 13).
With respect to pending claim 21, U.S. Patent No. 11,763,973 claims wherein, when the first sublayer comprises a bcc (100) material, the bcc (100) material is selected from the group consisting of: V, Nb, Mo, W, Ta, WTi50, Al10Nb40Ti50, and Cr (lines 1-5 of patented claim 3).
With respect to pending claim 22, U.S. Patent No. 11,763,973 claims wherein the first sublayer comprises (b), and wherein the first sublayer comprises a carbide, a nitride, or an oxide (lines 7-9 of patented claim 1, lines 12-14 of patented claim 13).
With respect to pending claim 23, U.S. Patent No. 11,763,973 claims wherein the first sublayer comprises one or more materials selected from the group consisting of: ScC, TiC, NbC, ZrC, HfC, TaC, FeO, CoO, ZrO, MgO, TiO, TiN, NbN, ZrN, HfN, and TaN (lines 1-5 of patented claim 4).
With respect to pending claim 24, U.S. Patent No. 11,763,973 claims wherein the first sublayer comprises (a) (lines 1-4 of patented claim 8, and lines 1-2 of patented claim 9).
With respect to pending claim 27, U.S. Patent No. 11,763,973 claims a magnetic recording head comprising the SOT device (lines 1-3 of patented claim 11, or lines 1-3 of patented claim 22).
With respect to pending claim 28, U.S. Patent No. 11,763,973 claims a magnetic recording device comprising the magnetic recording head (lines 1-3 of patented claim 11, or lines 1-3 of patented claim 22).
With respect to pending claim 29, U.S. Patent No. 11,763,973 claims a magneto-resistive memory comprising the SOT device (lines 1-3 of patented claim 12, or lines 1-3 of patented claim 23).
Claims 11-15, 17-20, 22-25 and 27-29 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1-10 and 14-17 of U.S. Patent No. 12,408,560. Although the claims at issue are not identical, they are not patentably distinct from each other because pending claims 11-15, 17-20, 22-25 and 27-29 are anticipated by patented claims 1-10 and 14-17 of U.S. Patent No. 12,408,560 as follows:
With respect to pending claim 11, U.S. Patent No. 12,408,560 claims a spin-orbit torque (SOT) device (line 1 of patented claim 1, or line 1 of patented claim 10), comprising: a bismuth antimony (BiSb) layer having a (012) orientation (lines 3-4 of patented claim 1, or line 16 or patented claim 10); and a multilayer structure disposed in contact with the BiSb layer (lines 5-6 of patented claim 1, or lines 13-14 of patented claim 10), the multilayer structure comprising: a sublayer comprising one or more materials selected from the group consisting of: a tetragonal (001) material having an a-axis lattice parameter in the range of about 4.49 Å to about 4.69 Å, a body-centered cubic (bcc) or B2 (100) material, a face-centered cubic (fcc) (100) material having a lattice parameter in the range of about 4.20 Å to about 4.70 Å, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, an amorphous metallic material, and a layered combination of one or more of any of the preceding materials (lines 1-11 of patented claim 2 include many of the materials listed above, or lines 3-12 of patented claim 10 include many of the materials listed above).
With respect to pending claim 12, U.S. Patent No. 12,408,560 claims wherein the multilayer structure is a buffer layer or an interlayer (lines 1-2 of patented claim 3, or lines 1-2 of patented claim 14).
With respect to pending claim 13, U.S. Patent No. 12,408,560 claims the SOT device further comprising one or more Bi layers (lines 17-19 of patented claim 10).
With respect to pending claim 14, U.S. Patent No. 12,408,560 claims wherein the sublayer comprises a carbide, a nitride, or an oxide (lines 8-9 of patented claim 1, or lines 11-12 of patented claim 10).
With respect to pending claim 15, U.S. Patent No. 12,408,560 claims wherein the sublayer comprises the fcc (100) material, and wherein the fcc (100) material is selected from the group consisting of: FeO, CoO, ZrO, MgO, TiO, ScN, TiN, NbN, ZrN, HfN, TaN, ScC, TiC, NbC, ZrC, HfC, TaC, WC, CoO, SIC, GaN, FeN, ZnO, MoZr10, MoNi20, NbZr20, and composite combinations thereof with one or more elements selected from the group of: W, AI, and Si (lines 1-4 of patented claim 6 include many of the materials listed above).
With respect to pending claim 17, U.S. Patent No. 12,408,560 claims a magnetic recording head comprising the SOT device (lines 1-2 of patented claim 7, or lines 1-2 of patented claim 15).
With respect to pending claim 18, U.S. Patent No. 12,408,560 claims a magnetic recording device comprising the magnetic recording head (lines 1-2 of patented claim 8, or lines 1-2 of patented claim 16).
With respect to pending claim 19, U.S. Patent No. 12,408,560 claims a magneto-resistive memory comprising the SOT device (lines 1-2 of patented claim 9, or lines 1-2 of patented claim 17).
With respect to pending claim 20, U.S. Patent No. 12,408,560 claims a spin-orbit torque (SOT) device, comprising: a multilayer structure, the multilayer structure comprising a first sublayer, the first sublayer comprising one of: (a) a material having: a fcc structure, a nearest neighbor XRD diffraction peak with d-spacing equal to about 2.0 Å to about 2.2 Å, and a lattice constant of a crystal structure between about 3.5 Å and 3.71 Å; or (b) one or more materials selected from the group consisting of: a tetragonal (001) material having an a-axis lattice parameter in the range of about 4.49 Å to about 4.69 Å, a body-centered cubic (bcc) or B2 (100) material, a face-centered cubic (fcc) (100) material having a lattice parameter in the range of about 4.20 Å to about 4.70 Å, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, an amorphous metallic material, and a layered combination of one or more of any of the preceding materials; and a bismuth antimony (BiSb) layer disposed in contact with the multilayer structure, the BiSb layer having a (012) orientation.
With respect to pending claim 22, U.S. Patent No. 12,408,560 claims wherein the first sublayer comprises (b), and wherein the first sublayer comprises a carbide, a nitride, or an oxide (lines 8-9 of patented claim 1, or lines 11-12 of patented claim 10).
With respect to pending claim 23, U.S. Patent No. 12,408,560 claims wherein the first sublayer comprises one or more materials selected from the group consisting of: ScC, TiC, NbC, ZrC, HfC, TaC, FeO, CoO, ZrO, MgO, TiO, TiN, NbN, ZrN, HfN, and TaN (lines 1-4 of patented claim 6).
With respect to pending claim 24, U.S. Patent No. 12,408,560 claims wherein the first sublayer comprises (a) (lines 10-12 in patented claim 1, and lines 1-3 of patented claim 5).
With respect to pending claim 25, U.S. Patent No. 12,408,560 claims wherein the first sublayer has a nearest neighbor distance equal to about afcc divided by the square root of 3 (lines 1-4 of patented claim 4).
With respect to pending claim 27, U.S. Patent No. 12,408,560 claims a magnetic recording head comprising the SOT device (lines 1-2 of patented claim 7, or lines 1-2 of patented claim 15).
With respect to pending claim 28, U.S. Patent No. 12,408,560 claims a magnetic recording device comprising the magnetic recording head (lines 1-2 of patented claim 8, or lines 1-2 of patented claim 16).
With respect to pending claim 29, U.S. Patent No. 12,408,560 claims a magneto-resistive memory comprising the SOT device (lines 1-2 of patented claim 9, or lines 1-2 of patented claim 17).
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claims 11, 12, 17-20 and 27-29 are rejected under 35 U.S.C. 102(a)(1) and/or 35 U.S.C. 102(a)(2) as being anticipated by Le et al. (US 2021/0249038).
With respect to claims 11, 12 and 17-19, Le et al. (US 2021/0249038) teach a spin-orbit torque (SOT) device (250, see FIG. 5A and paragraph [0048], for instance) comprising a bismuth antimony (BiSb) layer (20) having a (012) orientation (see paragraph [0049], for instance, i.e., “SOT device 250 comprises a BiSb layer 20 with a (012) orientation”); and a multilayer structure (includes 10 in FIG. 5A, which includes layers 12, 14 and 16, as shown in FIG. 1, for instance) disposed in contact with the BiSb layer (as shown in FIG. 5A, for instance), the multilayer structure comprising a sublayer (12, as shown in FIG. 1, for instance) comprising one or more materials selected from the group consisting of a tetragonal (001) material having an a-axis lattice parameter in the range of about 4.49 Å to about 4.69 Å, a body-centered cubic (bcc) or B2 (100) material, a face-centered cubic (fcc) (100) material having a lattice parameter in the range of about 4.20 Å to about 4.70 Å, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, an amorphous metallic material, and a layered combination of one or more of any of the preceding materials (see paragraph [0026], for instance, i.e., “pre-seed layer 12 comprises an amorphous material of… NiTa,” which is an amorphous metallic material) [as per claim 11]; wherein the multilayer structure is a buffer layer or an interlayer (see paragraph [0025], for instance, i.e., “buffer layer 10 comprises a pre-seed layer 12”) [as per claim 12]; wherein the SOT device is a component of a magnetic recording head (210, see FIG. 4, for instance) [as per claim 17]; wherein the magnetic recording head is a component of a magnetic recording device (100, see FIG. 3, for instance) [as per claim 18]; and wherein the SOT device is a component of a magneto-resistive memory (600, see FIG. 6, for instance) [as per claim 19].
With respect to claims 20 and 27-29, Le et al. (US 2021/0249038) teach a spin-orbit torque (SOT) device (250, see FIG. 5A and paragraph [0048], for instance) comprising a multilayer structure (includes 10 in FIG. 5A, which includes layers 12, 14 and 16, as shown in FIG. 1, for instance), the multilayer structure comprising a first sublayer (12, as shown in FIG. 1, for instance), the first sublayer comprising one of (a) a material having: a fcc structure, a nearest neighbor XRD diffraction peak with d-spacing equal to about 2.0 Å to about 2.2 Å, and a lattice constant of a crystal structure between about 3.5 Å and 3.71 Å; or (b) one or more materials selected from the group consisting of a tetragonal (001) material having an a-axis lattice parameter in the range of about 4.49 Å to about 4.69 Å, a body-centered cubic (bcc) or B2 (100) material, a face-centered cubic (fcc) (100) material having a lattice parameter in the range of about 4.20 Å to about 4.70 Å, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, an amorphous metallic material, and a layered combination of one or more of any of the preceding materials (see paragraph [0026], for instance, i.e., “pre-seed layer 12 comprises an amorphous material of… NiTa,” which is an amorphous metallic material); and a bismuth antimony (BiSb) layer (20) disposed in contact with the multilayer structure (as shown in FIG. 5A, for instance), the BiSb layer having a (012) orientation (see paragraph [0049], for instance, i.e., “SOT device 250 comprises a BiSb layer 20 with a (012) orientation”) [as per claim 20]; wherein the SOT device is a component of a magnetic recording head (210, see FIG. 4, for instance) [as per claim 27]; wherein the magnetic recording head is a component of a magnetic recording device (100, see FIG. 3, for instance) [as per claim 28]; and wherein the SOT device is a component of a magneto-resistive memory (600, see FIG. 6, for instance) [as per claim 29].
Claim Considerations - 35 USC § 103
This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention.
Allowable Subject Matter
Claims 1-10 are allowable over the prior art of record. Claim 26 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to Craig A. Renner whose telephone number is (571) 272-7580. The examiner can normally be reached Monday-Friday 9:00 AM - 7:30 PM.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Lim can be reached at (571) 270-1210. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/CRAIG A. RENNER/Primary Examiner, Art Unit 2688
