Prosecution Insights
Last updated: July 17, 2026
Application No. 19/355,198

Tapered Optical And Magnetic Elements For Improved Writing In Heat-Assisted Magnetic Recording

Non-Final OA §DP
Filed
Oct 10, 2025
Priority
Dec 12, 2024 — continuation of 12/456,484
Examiner
HINDI, NABIL Z
Art Unit
2688
Tech Center
2600 — Communications
Assignee
Headway Technologies Inc.
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
1y 1m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allowance Rate
936 granted / 1071 resolved
+25.4% vs TC avg
Moderate +9% lift
Without
With
+8.9%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 10m
Avg Prosecution
1 currently pending
Career history
1076
Total Applications
across all art units

Statute-Specific Performance

§101
2.2%
-37.8% vs TC avg
§103
28.9%
-11.1% vs TC avg
§102
57.2%
+17.2% vs TC avg
§112
2.7%
-37.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1071 resolved cases

Office Action

§DP
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In response to applicant’s filing dated October 10, 2025. The following action is taken: Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on nonstatutory double patenting provided the reference application or patent either is shown to be commonly owned with the examined application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. See MPEP § 717.02 for applications subject to examination under the first inventor to file provisions of the AIA as explained in MPEP § 2159. See MPEP § 2146 et seq. for applications not subject to examination under the first inventor to file provisions of the AIA . A terminal disclaimer must be signed in compliance with 37 CFR 1.321(b). The filing of a terminal disclaimer by itself is not a complete reply to a nonstatutory double patenting (NSDP) rejection. A complete reply requires that the terminal disclaimer be accompanied by a reply requesting reconsideration of the prior Office action. Even where the NSDP rejection is provisional the reply must be complete. See MPEP § 804, subsection I.B.1. For a reply to a non-final Office action, see 37 CFR 1.111(a). For a reply to final Office action, see 37 CFR 1.113(c). A request for reconsideration while not provided for in 37 CFR 1.113(c) may be filed after final for consideration. See MPEP §§ 706.07(e) and 714.13. The USPTO Internet website contains terminal disclaimer forms which may be used. Please visit www.uspto.gov/patent/patents-forms. The actual filing date of the application in which the form is filed determines what form (e.g., PTO/SB/25, PTO/SB/26, PTO/AIA /25, or PTO/AIA /26) should be used. A web-based eTerminal Disclaimer may be filled out completely online using web-screens. An eTerminal Disclaimer that meets all requirements is auto-processed and approved immediately upon submission. For more information about eTerminal Disclaimers, refer to www.uspto.gov/patents/apply/applying-online/eterminal-disclaimer. Claim 1-3, 10-12 and 20 are rejected on the ground of nonstatutory double patenting as being unpatentable over claims 1 and 5-7 of U.S. Patent No. 12,456,484. Although the claims at issue are not identical, they are not patentably distinct from each other because the claimed invention is broader in scope than the patented claims. The claimed invention limitations are encompassed within the limitations in the patent claims are indicated below: Claim 1 of the disclosed invention A method for manufacturing a write head, the method comprising: forming a triangular layer with a tapered edge; disposing a waveguide (WG) layer adjacent to the triangular layer, the WG layer including a flat section and a tapered section, the tapered section including a tapered angle and contacting the tapered edge of the triangular layer; positioning a cladding layer adjacent to the WG layer; and disposing a near field transducer (NFT) layer positioned adjacent to the cladding layer wherein the NFT layer includes a tapered section that includes the tapered angle Claim 1 writer head for a heat-assisted magnetic recording (HAMR) device, the writer head comprising: an optical component including a triangular layer having a tapered edge and a waveguide (WG) layer positioned adjacent to the triangular layer, the WG layer including a flat section and a tapered section, the tapered section including a tapered angle and contacting the tapered edge of the triangular layer; a cladding layer positioned adjacent to the WG layer; a near field transducer (NFT) layer positioned adjacent to the cladding layer, the NFT layer including a tapered section that includes the tapered angle; a heat sink layer positioned adjacent to the NFT layer; and a peg layer positioned adjacent to the heat sink layer and comprising an insulator and a tapered section comprising the tapered angle; and a magnetic component that includes a magnetic main pole having a first tapered section comprising the tapered angle, a main pole section substantially parallel to the flat section of the WG layer, and wherein the magnetic main pole has a saturation magnetization of about 24 kG or greater.1 of the US Patent 12,456,484 Claim 2 of the disclosed invention. disposing a heat sink layer adjacent to the NFT layer. Claim 1 of the US Pat 12,456,484 The limitation is present and encompassed within claim 1. Claim 3 of the disclosed invention. a peg layer positioned adjacent to the heat sink layer. Claim 1 of the US Pat 12,456,484 disclosing a peg. Claim 10 of the disclosed invention. The method of claim 1, wherein the NFT layer comprises a first NFT layer that includes a first metal and a second NFT layer that includes a transition metal, wherein the first NFT layer includes one or more of gold, silver, copper, alloys thereof, graphene, and a metal oxide, and wherein the second NFT layer includes one of rhodium or iridium Claim 5 of the US Pat 12,456,484, The writer head of claim 1, wherein the NFT layer includes a first NFT layer includes a first metal and a second NFT layer that includes a transition metal, wherein the first NFT layer includes one or more of gold, silver, copper, alloys thereof, graphene, and a metal oxide; and wherein the second NFT layer includes one of Rh or Ir. Claim 11 of the disclosed invention. The method of claim 2, wherein the heat sink layer includes one or more of gold, ruthenium, aluminum nitride, or silicon carbide . Claim 6 of the US Pat 12,456,484. . The writer head of claim 1, wherein the heat sink layer includes one or more of gold, ruthenium, aluminum nitride, or silicon carbide Claim 12 of the disclosed invention. The method of claim 2, further comprising: disposing a first oxide layer between the NFT layer and the heat sink layer. Claim 7 of the US 12,456,484 The writer head of claim 1, wherein the optical component further includes a first oxide layer positioned between the NFT layer and the heat sink layer. Claim 20 of the disclosed invention. a laser diode adjacent to the waveguide layer and the NFT layer, wherein the laser diode is configured to generate a beam of light, and wherein the waveguide layer is configured to direct the beam of light from the laser diode to the NFT layer. Claim 1 of the US Pat 12, 456,484. The laser source is within the HAMR Although the claims are not identical, the disclosed invention as claimed is encompassed and broader in scope than the claims cited in the US Pat 12, 456,484. Claim Objections Claims 4-9 and 13-19 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The cited prior art does not sow or teach a peg having an insulator and a tapered section as in claim 4, a main pole pareallel to the flat section of the WG layer as in claim 5, the tapered angle as n claim 7, an Ru blocking layer as in claim 8, a triangulsr layer havingmade of the material as in claim 9. The prior art made of record and not relied upon is considered pertinent to applicant's disclosure.US Pat 11,894,018 disclosing an HAMR having a triangular section element 92, a waveguide 152b and a flat section facing the medium 195a.. Any inquiry concerning this communication or earlier communications from the examiner should be directed to NABIL Z HINDI whose telephone number is (571)272-7618. The examiner can normally be reached on MON-FRI from 5:30 AM to 1:30 PM. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Lim, can be reached at telephone number 571-270-1210. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from Patent Center. Status information for published applications may be obtained from Patent Center. Status information for unpublished applications is available through Patent Center to authorized users only. Should you have questions about access to the USPTO patent electronic filing system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). Examiner interviews are available via a variety of formats. See MPEP § 713.01. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) Form at https://www.uspto.gov/InterviewPractice. /NABIL Z HINDI/Primary Examiner, Art Unit 2688
Read full office action

Prosecution Timeline

Oct 10, 2025
Application Filed
Jun 17, 2026
Non-Final Rejection mailed — §DP (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
96%
With Interview (+8.9%)
1y 10m (~1y 1m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1071 resolved cases by this examiner. Grant probability derived from career allowance rate.

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