Prosecution Insights
Last updated: April 19, 2026
Application No. 17/351,748

MAGNETIC FIELD SENSOR AND METHOD FOR MAKING SAME

Final Rejection §103§DP
Filed
Jun 18, 2021
Examiner
CHOUDHRY, MOHAMMAD M
Art Unit
2899
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
X-Celeprint Limited
OA Round
4 (Final)
82%
Grant Probability
Favorable
5-6
OA Rounds
2y 10m
To Grant
95%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allow Rate
561 granted / 686 resolved
+13.8% vs TC avg
Moderate +13% lift
Without
With
+13.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 10m
Avg Prosecution
35 currently pending
Career history
721
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
73.7%
+33.7% vs TC avg
§102
10.7%
-29.3% vs TC avg
§112
4.8%
-35.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 686 resolved cases

Office Action

§103 §DP
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Double Patenting The nonstatutory double patenting rejection is based on a judicially created doctrine grounded in public policy (a policy reflected in the statute) so as to prevent the unjustified or improper timewise extension of the “right to exclude” granted by a patent and to prevent possible harassment by multiple assignees. A nonstatutory obviousness-type double patenting rejection is appropriate where the conflicting claims are not identical, but at least one examined application claim is not patentably distinct from the reference claim(s) because the examined application claim is either anticipated by, or would have been obvious over, the reference claim(s). See, e.g., In re Berg, 140 F.3d 1428, 46 USPQ2d 1226 (Fed. Cir. 1998); In re Goodman, 11 F.3d 1046, 29 USPQ2d 2010 (Fed. Cir. 1993); In re Longi, 759 F.2d 887, 225 USPQ 645 (Fed. Cir. 1985); In re Van Ornum, 686 F.2d 937, 214 USPQ 761 (CCPA 1982); In re Vogel, 422 F.2d 438, 164 USPQ 619 (CCPA 1970); and In re Thorington, 418 F.2d 528, 163 USPQ 644 (CCPA 1969). A timely filed terminal disclaimer in compliance with 37 CFR 1.321(c) or 1.321(d) may be used to overcome an actual or provisional rejection based on a nonstatutory double patenting ground provided the conflicting application or patent either is shown to be commonly owned with this application, or claims an invention made as a result of activities undertaken within the scope of a joint research agreement. Effective January 1, 1994, a registered attorney or agent of record may sign a terminal disclaimer. A terminal disclaimer signed by the assignee must fully comply with 37 CFR 3.73(b). Claims 1-7, 9-16, 18 and 21-22 are rejected on the ground of nonstatutory obviousness-type double patenting as being unpatentable over claims 1-16 of U.S. Patent No. 11,067,643 (hereinafter ‘643) in view of Ikeginger (CN 104576917, hereinafter Ikeginger). Although the conflicting claims are not identical, they are not patentably distinct from each other because of the following. With respect to claim 1, US patent ‘643 discloses: A multi-element sensor for measuring a magnetic field, comprising (Claim 1): an integrated circuit element comprising an electronic circuit formed in a semiconductor circuit substrate (Claim 1); a cured adhesive layer disposed over the circuit substrate (Claim 1); a magnetic sensing element comprising a sensor substrate having at least one fractured tether, a top side, and a bottom side opposite the top side, and a magnetic sensor formed on, in, or over the top side of the sensor substrate, wherein the bottom side of the sensor substrate is adhered to the adhesive layer (Claim 1); one or more electrical connections formed at least partly in a conductive distribution layer on the circuit substrate over the electronic circuit, the electrical connections electrically connecting the magnetic sensor to the electronic circuit (Claim 1); and wherein the circuit substrate is a separate substrate from the sensor substrate and the material of the circuit substrate comprises a different material than the material of the sensor substrate (Claim 1). ‘643 does not explicitly disclose wherein contact pads are provided on the magnetic sensor; the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections; wherein the contact pads are disposed entirely on the sensor substrate next to an edge or at a corner of the sensor substrate and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor.. In an analogous art, Ikeginger discloses wherein contact pads are provided on the magnetic sensor (Page 13; Para 0033; contact pads 112); the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections (Page 13; Para 0034); wherein the contact pads are disposed entirely (Fig. 1E – 112 are disposed entirely on 102) on the sensor substrate next to an edge or at a corner of the sensor substrate (Fig. 1H & 1J – 112 are disposed next to edges, 104 is on substrate 102 – Para 0026) and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor (Para 0004; Hall sensor). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi’s device by adding Ikeginger’s disclosure in order to improve the accuracy of magnetic field monitoring. With respect to claim 15, US patent ‘643 discloses: A multi-element sensor wafer, comprising (Claim 13): a plurality of spaced apart integrated circuit elements each comprising an electronic circuit disposed over a sacrificial portion of the sensor wafer, and formed in a semiconductor circuit substrate (Claim 13); an adhesive layer disposed over the electronic circuits (Claim 13); a plurality of magnetic sensing elements each comprising a sensor substrate having at least one fractured tether, a top side, and a bottom side opposite the top side, and a magnetic sensor formed on, in, or over the top side of the sensor substrate, wherein the bottom side of the sensor substrate is adhered to the adhesive layer and is disposed over a corresponding electronic circuit (Claim 13); one or more electrical connections formed at least partly in a conductive distribution layer on the circuit substrate over each electronic circuit, the electrical connections electrically connecting the magnetic sensor to the corresponding electronic circuit (Claim 13); and wherein the circuit substrate is a separate substrate from the sensor substrate and the material of the circuit substrate comprises a different material than the material of the sensor substrate (Claim 13). ‘643 does not explicitly disclose wherein contact pads are provided on the magnetic sensor; the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections; wherein the contact pads are disposed entirely on the sensor substrate next to an edge or at a corner of the sensor substrate and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor. In an analogous art, Ikeginger discloses wherein contact pads are provided on the magnetic sensor (Page 13; Para 0033; contact pads 112); the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections (Page 13; Para 0034); wherein the contact pads are disposed entirely (Fig. 1E – 112 are disposed entirely on 102) on the sensor substrate next to an edge or at a corner of the sensor substrate (Fig. 1H & 1J – 112 are disposed next to edges, 104 is on substrate 102 – Para 0026) and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor (Para 0004; Hall sensor). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi’s device by adding Ikeginger’s disclosure in order to improve the accuracy of magnetic field monitoring. Claims 2-7, 9-14, 16, 18 and 21-22 are also rejected on the ground of nonstatutory obviousness-type double patenting as being unpatentable over claims 1-16 of U.S. Patent No. 11,067,643 (hereinafter ‘643) in view of Ikeginger. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1, 4, and 21-22 are rejected under 35 U.S.C. 103 as being unpatentable over Asahi Kasei (JP 2003/243646, hereinafter Asahi) in view of Ikeginger (CN 104576917, hereinafter Ikeginger). With respect to claim 1, Ashai discloses: an integrated circuit element comprising an electronic circuit (1 of fig. 1; Para 0013) formed in a semiconductor circuit substrate (1a; Para 0013); a cured adhesive layer (3) disposed over the circuit substrate (Para 0014); a magnetic sensing element comprising a sensor substrate (Para 0014 and 0019; thin film substrate), a top side (top surface of the thin film substrate), and a bottom side opposite the top side (bottom surface of the thin film substrate), and a magnetic sensor (2) formed on, in, or over the top side of the sensor substrate (Para 0030), wherein the bottom side of the sensor substrate is adhered to the adhesive layer (Para 0030; the back side of the thin film substrate is attached with the adhesive layer 3); one or more electrical connections formed at least partly in a conductive distribution layer (4) on the circuit substrate over the electronic circuit, the electrical connections electrically connecting the magnetic sensor to the electronic circuit (Para 0027); and wherein the circuit substrate is a separate substrate from the sensor substrate (substrate 1a is different than thin film substrate) and the material of the circuit substrate comprises a different material than the material of the sensor substrate (Para 0019 and 0024; substrate 1a comprises of Si and sensor substrate can comprise of GaAs). Ashai does not explicitly disclose wherein contact pads are provided on the magnetic sensor; the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections; wherein the contact pads are disposed entirely on the sensor substrate next to an edge or at a corner of the sensor substrate and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor. In an analogous art, Ikeginger discloses wherein contact pads are provided on the magnetic sensor (Page 13; Para 0033; contact pads 112); the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections (Page 13; Para 0034); wherein the contact pads are disposed entirely (Fig. 1E – 112 are disposed entirely on 102) on the sensor substrate next to an edge or at a corner of the sensor substrate (Fig. 1H & 1J – 112 are disposed next to edges, 104 is on substrate 102 – Para 0026) and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor (Para 0004; Hall sensor). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi’s device by adding Ikeginger’s disclosure in order to improve the accuracy of magnetic field monitoring. With respect to claim 4, Asahi/Ikeginger discloses wherein a distance between the contact pad and the nearest edge of the magnetic sensor is smaller than 5 um (Fig. 1 – merely having a specific distance between sensor and contact pad is obvious to achieve the optimal results according to the other components of the device). With respect to claim 21, Ashai discloses: an integrated circuit element comprising an electronic circuit (1 of fig. 1; Para 0013) formed in a semiconductor circuit substrate (1a; Para 0013); a cured adhesive layer (3) disposed over the circuit substrate (Para 0014); a magnetic sensing element comprising a sensor substrate (Para 0014 and 0019; thin film substrate) having, a top side (top surface of the thin film substrate), and a bottom side opposite the top side (bottom surface of the thin film substrate), and a magnetic sensor (2) formed on, in, or over the top side of the sensor substrate (Para 0030), wherein the bottom side of the sensor substrate is adhered to the adhesive layer (Para 0030; the back side of the thin film substrate is attached with the adhesive layer 3); one or more electrical connections formed at least partly in a conductive distribution layer (4) on the circuit substrate over the electronic circuit, the electrical connections electrically connecting the magnetic sensor to the electronic circuit (Para 0027); and wherein the circuit substrate is a separate substrate from the sensor substrate (substrate 1a is different than thin film substrate) and the material of the circuit substrate comprises a different material than the material of the sensor substrate (Para 0019 and 0024; substrate 1a comprises of Si and sensor substrate can comprise of GaAs). Asahi does not explicitly disclose wherein contact pads are provided on the magnetic sensor; the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections; wherein the contact pads are disposed entirely on the sensor substrate next to an edge or at a corner of the sensor substrate and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor.. In an analogous art, Ikeginger discloses wherein contact pads are provided on the magnetic sensor (Page 13; Para 0033; contact pads 112); the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections (Page 13; Para 0034); wherein the contact pads are disposed entirely (Fig. 1E – 112 are disposed entirely on 102) on the sensor substrate next to an edge or at a corner of the sensor substrate (Fig. 1H & 1J – 112 are disposed next to edges, 104 is on substrate 102 – Para 0026) and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor (Para 0004; Hall sensor). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi’s device by adding Ikeginger’s disclosure in order to improve the accuracy of magnetic field monitoring. With respect to claim 22, Ashai does not explicitly disclose wherein the magnetic sensing element is a Hall sensor or a quantum well Hall sensor. In an analogous art, Ikeginger discloses wherein the magnetic sensing element is a Hall sensor or a quantum well Hall sensor (Para 0004; Hall sensor). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi’s device by adding Ikeginger’s disclosure in order to improve the accuracy of magnetic field monitoring. Claims 2, 7 and 9 are rejected under 35 U.S.C. 103 as being unpatentable over Asahi/ Ikeginger in view of Kim et al. (US 2014/0167749, hereinafter Kim). With respect to claim 2, Asahi/ Ikeginger does not explicitly disclose wherein a size of the magnetic sensing element is smaller than 500 um. In an analogous art, Kim discloses wherein a size of the magnetic sensing element is smaller than 500 um (Para 0021 and 0048-0049). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi/ Ikeginger’s device by adding Kim’s disclosure in order to reduce the size of a semiconductor device. With respect to claim 7, Asahi further discloses wherein the material of the sensor substrate has a mobility that is higher than the mobility of the semiconductor of the circuit substrate at room temperature (GaAs has higher mobility than Si at room temperature). With respect to claim 9, Asahi further discloses wherein the material of the sensor substrate is a compound semiconductor, a III-V semiconductor, or GaAs (Para 0019; GaAs), or wherein the semiconductor of the circuit substrate is silicon (Para 0024; Si). Claim 3 is rejected under 35 U.S.C. 103 as being unpatentable over Asahi/ Ikeginger in view of Zhao et al. (US 2014/0130595, hereinafter Zhao). With respect to claim 3, Asahi/ Ikeginger does not explicitly disclose wherein a ratio of the size of the sensing element and the size of the contact pad may is between 3 and 10. In an analogous art, Zhao discloses wherein a ratio of the size of the sensing element and the size of the contact pad may is between 3 and 10 (Fig. 1- ratio between size of 16 and 12 is 3-10). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi/ Ikeginger’s device by adding Zhao’s disclosure in order to connect different components of a semiconductor device. Claim 5 is rejected under 35 U.S.C. 103 as being unpatentable over Asahi/ Ikeginger in view of Stetter et al. (US 2013/0311108, hereinafter Stetter). With respect to claim 5 Asahi/ Ikeginger discloses the multi-element sensor according to claim 1. Asahi/ Ikeginger does not explicitly disclose wherein at least two sensing elements are provided adjacent to each other. In an analogous art, Stetter discloses that wherein at least two sensing elements are provided adjacent to each other (fig. 2B; Para 0003 and 0010). Therefore, it would have been obvious to one of an ordinary skilled in the art before the effective filing date of the claimed invention to modify Asahi/ Ikeginger 's device by adding Stetter’s disclosure in order to provide redundancy and improving reliability. Claim 6 is rejected under 35 U.S.C. 103 as being unpatentable over Asahi/ Ikeginger in view of Starkston et al. (US 2014/0091474, hereinafter Starkston). With respect to claim 6, Asahi/ Ikeginger does not explicitly disclose wherein the contact pads have a triangular shape. Asahi/ Ikeginger does not explicitly disclose wherein the contact pads have a triangular shape. In an analogous art, Starkston discloses wherein the contact pads have a triangular shape (Para 0016 -triangular). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi/ Ikeginger’s device by adding Starkson’s disclosure in order to connect different components of a semiconductor device. Claim 10 is rejected under 35 U.S.C. 103 as being unpatentable over Asahi/ Ikeginger in view of Sato et al. (US 2004/0212360, hereinafter Sato). With respect to claim 10, Asahi/Ikeginger discloses the multi-element sensor according to claim 1. Asahi/Ikeginger does not explicitly disclose a ferromagnetic layer on top of the conductive distribution layer. In an analogous art, Sato discloses a ferromagnetic layer on top of the conductive distribution layer (Para 0076; ferromagnetic film). Therefore, it would have been obvious to one of an ordinary skilled in the art at the time of invention to modify Asahi/ Ikeginger's device by adding Sato’s disclosure in order to improve the device functionality. Claims 11-14 are rejected under 35 U.S.C. 103 as being unpatentable over Asahi/ Ikeginger in view of Deak et al. (US 2013/0277781, hereinafter Deak). With respect to claim 11, Asahi/ Ikeginger discloses the multi-element sensor according to claim 1. Asahi/ Ikeginger does not explicitly disclose wherein the magnetic sensing element comprises supporting structures made of electrically insulating material, situated at least partially on the lateral sides of the sensor substrate. In an analogous art, Deak discloses wherein the magnetic sensing element comprises supporting structures made of electrically insulating material, situated at least partially on the lateral sides of the sensor substrate (Para 0015; insulating layer). Therefore, it would have been obvious to one of an ordinary skilled in the art at the time of invention to modify Asahi/ Ikeginger’s device by adding Deak’s disclosure in order to protect the device from arcing currents. With respect to claim 12, Asahi further discloses wherein the adhesion layer between the magnetic sensing element and the electronic circuit is chemically bonded to the supporting structures (Para 0012). With respect to claim 13, Asahi further discloses wherein the magnetic sensing element is mechanically joint with the electronic circuit through an adhesion layer present on the electronic circuit (Para 0007). With respect to claim 14, Asahi further discloses wherein the magnetic sensing element is smaller than the electronic circuit (fig. 1), and covers only a portion of the electronic circuit on which the magnetic sensing element is disposed (fig. 1; Para 0013), and extends from a surface of the electronic circuit by a distance of 2 µ m or more (mere changing the size of the sensing element is not critical and obvious to achieve the optimal results). Claims 15 -16 and 18 are rejected under 35 U.S.C. 103 as being unpatentable over Asahi in view of Stetter and further in view of Ikeginger. With respect to claim 15, Asahi discloses: an integrated circuit element comprising an electronic circuit (1 of fig. 1; Para 0013) formed in a semiconductor circuit substrate (1a; Para 0013); an adhesive layer (3) disposed over the electronic circuits (Para 0014); a magnetic sensing element comprising a sensor substrate (Para 0014 and 0019; thin film substrate), a top side (top surface of the thin film substrate), and a bottom side opposite the top side (bottom surface of the thin film substrate), and a magnetic sensor (2) formed on, in, or over the top side of the sensor substrate (Para 0030), wherein the bottom side of the sensor substrate is adhered to the adhesive layer (Para 0030; the back side of the thin film substrate is attached with the adhesive layer 3) and is disposed over a corresponding electronic circuit (fig. 1); one or more electrical connections formed at least partly in a conductive distribution layer (4) on the circuit substrate over the electronic circuit, the electrical connections electrically connecting the magnetic sensor to the corresponding electronic circuit (Para 0027); and wherein the circuit substrate is a separate substrate from the sensor substrate (substrate 1a is different than thin film substrate) and the material of the circuit substrate comprises a different material than the material of the sensor substrate (Para 0019 and 0024; substrate 1a comprises of Si and sensor substrate can comprise of GaAs). Asahi does not explicitly disclose that the sensor wafer is multi-element and there are plurality of spaced apart integrated circuit elements each comprising an electronic circuit disposed over a sacrificial portion of the sensor wafer. In an analogous art, Stetter discloses that the sensor wafer is a multi-element sensor wafer (fig. 2B; Para 0003 and 0010) and there are plurality of spaced apart integrated circuit elements each comprising an electronic circuit disposed over a sacrificial portion of the sensor wafer (Para 0084; substrate 110 includes both a substrate wafer 110a with a surface sacrificial layer 110b, the sacrificial layer 110 is partially etched and IC elements are disposed over the sacrificial layer). Therefore, it would have been obvious to one of an ordinary skilled in the art at the time of invention to modify Asahi's device by adding Stetter’s disclosure in order to provide redundancy and improving reliability. Ashai/Stetter does not explicitly disclose wherein contact pads are provided on the magnetic sensor; the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections; wherein the contact pads are disposed entirely on the sensor substrate next to an edge or at a corner of the sensor substrate and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor. In an analogous art, Ikeginger discloses wherein contact pads are provided on the magnetic sensor (Page 13; Para 0033; contact pads 112); the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections (Page 13; Para 0034); wherein the contact pads are disposed entirely (Fig. 1E – 112 are disposed entirely on 102) on the sensor substrate next to an edge or at a corner of the sensor substrate (Fig. 1H & 1J – 112 are disposed next to edges, 104 is on substrate 102 – Para 0026) and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor (Para 0004; Hall sensor). Therefore, it would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to modify Asahi’s device by adding Ikeginger/Stetter’s disclosure in order to improve the accuracy of magnetic field monitoring. With respect to claim 16, Asahi further discloses the multi-element sensor source wafer according to claim 15. Asahi does not explicitly disclose that wherein the sacrificial portion forms a gap between the circuit substrate and the sensor wafer defining at least one tether connecting the circuit substrate to an anchoring portion of the sensor wafer. In an analogous art, Stetter discloses wherein the sacrificial portion forms a gap between the circuit substrate and the sensor wafer defining at least one tether connecting the circuit substrate to an anchoring portion of the sensor wafer (Para 0084). Therefore, it would have been obvious to one of an ordinary skilled in the art at the time of invention to modify Asahi's device by adding Stetter’s disclosure in order to provide redundancy and improving reliability. With respect to claim 18, Asahi further discloses wherein the material of the sensor substrate is GaAs (Para 0019; GaAs), or wherein the semiconductor of the circuit substrate is silicon (Para 0024; Si). Response to Arguments Applicant's arguments filed on 15/12/2025 regarding amended claims have been considered, however they are not persuasive. Regarding ODP applicant argues as below: PNG media_image1.png 560 710 media_image1.png Greyscale Examiner respectfully disagrees because Ikeginger discloses wherein contact pads are provided on the magnetic sensor (Page 13; Para 0033; contact pads 112); the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections (Page 13; Para 0034); wherein the contact pads are disposed entirely (Fig. 1E – 112 are disposed entirely on 102) on the sensor substrate next to an edge or at a corner of the sensor substrate (Fig. 1H & 1J – 112 are disposed next to edges, 104 is on substrate 102 – Para 0026) and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor (Para 0004; Hall sensor). Applicant further argues that prior art does not explicitly disclose “wherein the contact pads are disposed entirely on the sensor substrate”. Examiner respectfully disagrees because Ikeginger discloses wherein contact pads are provided on the magnetic sensor (Page 13; Para 0033; contact pads 112); the electrical connections electrically connecting the contact pads of the magnetic sensor to the electrical connections (Page 13; Para 0034); wherein the contact pads are disposed entirely (Fig. 1E – 112 are disposed entirely on 102) on the sensor substrate next to an edge or at a corner of the sensor substrate (Fig. 1H & 1J – 112 are disposed next to edges, 104 is on substrate 102 – Para 0026) and wherein the magnetic sensing element is a Hall sensor or a quantum well sensor (Para 0004; Hall sensor). Therefore, the rejection has been maintained. Conclusion Applicant's arguments regarding amended claims have been considered, however they are not persuasive. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any extension fee pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to MOHAMMAD M CHOUDHRY whose telephone number is (571)270-5716. The examiner can normally be reached Monday - Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Zandra Smith can be reached on 571-272-2429. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MOHAMMAD M CHOUDHRY/Primary Examiner, Art Unit 2899
Read full office action

Prosecution Timeline

Jun 18, 2021
Application Filed
Apr 06, 2024
Non-Final Rejection — §103, §DP
Jul 10, 2024
Response Filed
Oct 15, 2024
Final Rejection — §103, §DP
Jan 13, 2025
Applicant Interview (Telephonic)
Jan 13, 2025
Examiner Interview Summary
Jan 17, 2025
Request for Continued Examination
Jan 23, 2025
Response after Non-Final Action
Feb 06, 2025
Non-Final Rejection — §103, §DP
May 12, 2025
Response Filed
Aug 21, 2025
Final Rejection — §103, §DP (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604515
SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER
2y 5m to grant Granted Apr 14, 2026
Patent 12581917
MATCHING PRE-PROCESSING AND POST-PROCESSING SUBSTRATE SAMPLES
2y 5m to grant Granted Mar 17, 2026
Patent 12557366
Semiconductor Device and Method For Manufacturing Semiconductor Device
2y 5m to grant Granted Feb 17, 2026
Patent 12550382
THIN-FILM STORAGE TRANSISTOR WITH FERROELECTRIC STORAGE LAYER
2y 5m to grant Granted Feb 10, 2026
Patent 12550655
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
2y 5m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

5-6
Expected OA Rounds
82%
Grant Probability
95%
With Interview (+13.3%)
2y 10m
Median Time to Grant
High
PTA Risk
Based on 686 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month