Prosecution Insights
Last updated: April 19, 2026
Application No. 17/380,769

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE

Non-Final OA §102§103
Filed
Jul 20, 2021
Examiner
ISAAC, STANETTA D
Art Unit
2898
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Nexperia B V
OA Round
5 (Non-Final)
86%
Grant Probability
Favorable
5-6
OA Rounds
2y 7m
To Grant
48%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allow Rate
811 granted / 948 resolved
+17.5% vs TC avg
Minimal -38% lift
Without
With
+-37.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 7m
Avg Prosecution
57 currently pending
Career history
1005
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
49.5%
+9.5% vs TC avg
§102
44.6%
+4.6% vs TC avg
§112
5.4%
-34.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 948 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . This office action is in response to the appeal brief filed on 12/01/25. Response to Amendment Applicant's request for reconsideration of the finality of the rejection of the last Office action is persuasive and, therefore, the finality of that action is withdrawn. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1, 17, 18 and 20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Chang et al. (US PGPub 2019/0254173, hereinafter referred to as “Chang”). Chang discloses the semiconductor device as claimed. See figures 1-7 and corresponding text, where Chang teaches, in claim 1, a semiconductor device comprising: a frontside (F) and a backside (BS); four sidewalls (F, BS, TS, and B); and a first solder (50) or glue connection on the frontside (left of component) and a second solder (50) or glue connection on the backside (right of component), wherein the semiconductor device (30) is connected to a printed circuit board (20) via one of the four sidewalls (F, BS, TS, and B), so that the first solder (50) or glue connection and the second solder (50) or glue connection are visible for a visual solder or glue inspection (figure 3; [0023]). (See modified illustration below.) PNG media_image1.png 509 680 media_image1.png Greyscale enc Chang teaches, in claim 17, wherein the semiconductor device further comprises a solder pad on the one sidewall connecting the semiconductor device (30) to the printed circuit (20) (figures 1 and 3; [0023-0024]). Chang teaches, in claim 18, further comprising an open contact on the frontside and an open contact on the backside (figures 1 and 3; [0023-0024]). Chang teaches, in claim 20, wherein the frontside and the backside are wettable flanks, and wherein the semiconductor device is mounted to by the one sidewall to the printed circuit at an angle of 90o (figure 3; [0023]) Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. Claim(s) 2-8 and 19 is/are rejected under 35 U.S.C. 103 as being unpatentable over Chang et al. (US PGPub 2019/0254173, hereinafter referred to as “Chang”) as applied to claim 1 above, and further in view of Hable et al. (US PGPub 2018/022720, hereinafter referred to as “Hable”). Chang discloses the semiconductor device substantially as claimed. See the rejection above. However, Chang fails explicitly to show, in claim 2, wherein the semiconductor device further comprises an isolating layer on the four sidewalls. Hable teaches, in claim 2, a semiconductor device that is encapsulated by a ceramic material ([0039-0041]). In addition, Hable provides the advantages of improving electrical reliability and integrity of the package ([0013]). Therefore, it would have been obvious to one of ordinary skill in the art at the invention was filed, to incorporate wherein the semiconductor device further comprises an isolating layer on the four sidewalls, in the device of Chang, according to the teachings of Hable, with the motivation of improving electrical reliability and integrity of the package. Chang fails to show, in claim 3, wherein the isolating layer is a ceramic, parylene or equivalent coating. Hable teaches, in claim 3, a semiconductor device that is encapsulated by a ceramic material ([0039-0041]). In addition, Hable provides the advantages of improving electrical reliability and integrity of the package ([0013]). Therefore, it would have been obvious to one of ordinary skill in the art at the invention was filed, to incorporate wherein the isolating layer is a ceramic, parylene or equivalent coating, in the device of Chang, according to the teachings of Hable, with the motivation of improving electrical reliability and integrity of the package. Chang fails to show, in claim 4, wherein the isolating layer is a mould. Hable teaches, in claim 4, a semiconductor device that is encapsulated by a ceramic material ([0039-0041]). In addition, Hable provides the advantages of improving electrical reliability and integrity of the package ([0013]). Therefore, it would have been obvious to one of ordinary skill in the art at the invention was filed, to incorporate wherein the isolating layer is a mould, in the device of Chang, according to the teachings of Hable, with the motivation of improving electrical reliability and integrity of the package. Chang fails to show, in claims 5-8, an automotive part comprising a semiconductor device. Hable teaches, in claims 5-8, an automotive part comprising a semiconductor device (figure 8; [0041], [0095]). In addition, Hable provides the advantages of improving parasitic inductances and electrical reliability ([0013]). Therefore, it would have been obvious to one of ordinary skill in the art at the invention was filed, to incorporate wherein the isolating layer is a mould, in the device of Chang, according to the teachings of Hable, with the motivation of improving parasitic inductances and electrical reliability. Chang fails to show, in claim 19, further comprising an isolating layer on the four sidewalls that protect non-contact areas of the semiconductor device mounted to the printed circuit by the one sidewall are protected by the isolating layer. Hable teaches, in claim 10, a semiconductor device that is encapsulated by a ceramic material ([0039-0041]). In addition, Hable provides the advantages of improving electrical reliability and integrity of the package ([0013]). Therefore, it would have been obvious to one of ordinary skill in the art at the invention was filed, to incorporate further comprising an isolating layer on the four sidewalls that protect non-contact areas of the semiconductor device mounted to the printed circuit by the one sidewall are protected by the isolating layer, in the device of Chang, according to the teachings of Hable, with the motivation of improving electrical reliability and integrity of the package. Response to Arguments Applicant’s arguments with respect to claim(s) 1-8 and 17-20 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to STANETTA D ISAAC whose telephone number is (571)272-1671. The examiner can normally be reached M-F 10-6. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Leonard Chang can be reached at 571-270-3691. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /STANETTA D ISAAC/Examiner, Art Unit 2898 March 12, 2026
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Prosecution Timeline

Jul 20, 2021
Application Filed
Jun 03, 2023
Non-Final Rejection — §102, §103
Aug 18, 2023
Response Filed
Jan 13, 2024
Non-Final Rejection — §102, §103
Apr 19, 2024
Response Filed
Aug 13, 2024
Non-Final Rejection — §102, §103
Jan 15, 2025
Response Filed
May 19, 2025
Final Rejection — §102, §103
Jul 25, 2025
Response after Non-Final Action
Sep 29, 2025
Notice of Allowance
Dec 01, 2025
Response after Non-Final Action
Dec 08, 2025
Response after Non-Final Action
Mar 12, 2026
Non-Final Rejection — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604706
APPARATUS INCLUDING TRANSPARENT MATERIAL FOR TRANSPARENT PROCESS PERFORMANCE AND METHOD USING THEREOF
2y 5m to grant Granted Apr 14, 2026
Patent 12604715
ISOLATION STRUCTURE AND MEMORY DEVICE
2y 5m to grant Granted Apr 14, 2026
Patent 12593714
SEMICONDUCTOR DEVICE INCLUDING BONDING ENHANCEMENT LAYER AND METHOD OF FORMING THE SAME
2y 5m to grant Granted Mar 31, 2026
Patent 12593496
Multiple Threshold Voltage Implementation Through Lanthanum Incorporation
2y 5m to grant Granted Mar 31, 2026
Patent 12581981
Method of Forming an Interconnection between an Electric Component and an Electronic Component
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

5-6
Expected OA Rounds
86%
Grant Probability
48%
With Interview (-37.9%)
2y 7m
Median Time to Grant
High
PTA Risk
Based on 948 resolved cases by this examiner. Grant probability derived from career allow rate.

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