Prosecution Insights
Last updated: April 19, 2026
Application No. 17/561,670

POWER DELIVERY USING BACKSIDE POWER FOR STITCHED DIES

Final Rejection §103§112
Filed
Dec 23, 2021
Examiner
ZHU, SHENG-BAI
Art Unit
2897
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Intel Corporation
OA Round
4 (Final)
63%
Grant Probability
Moderate
5-6
OA Rounds
2y 11m
To Grant
67%
With Interview

Examiner Intelligence

Grants 63% of resolved cases
63%
Career Allow Rate
441 granted / 705 resolved
-5.4% vs TC avg
Minimal +5% lift
Without
With
+4.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
59 currently pending
Career history
764
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
66.2%
+26.2% vs TC avg
§102
21.5%
-18.5% vs TC avg
§112
10.7%
-29.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 705 resolved cases

Office Action

§103 §112
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Detailed Action Claim Rejections – 35 U.S.C. 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 6 and 16 recites the limitation " the signal line". There is insufficient antecedent basis for this limitation in the claim. Claims 7-10 and 17-20 depend from Claims 6 and 16. For purpose of examination, the Examiner interprets the limitation as the front side power rail. Claim Rejections – 35 U.S.C. 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claims 1, 2, 4-6, 11-13, 15-18 and 20 rejected under 35 U.S.C. 103 as being unpatentable over Chen (U.S. Patent Pub. No. 2021/0375853), in view of Shue (U.S. Patent Pub. No. 2022/0285292) of record. Regarding Claim 1 FIG. 1 of Chen discloses an integrated circuit structure, comprising: a first die (T1) comprising a first device layer (113) and a first plurality of metallization layers (MD_1, VD_1) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (T2) comprising a second device layer (114) and a second plurality of metallization layers (MD_2, VD_2) over the second device layer, the second device layer comprising a second plurality of integrated circuit devices (stacked); a signal line coupling the first die and the second die at a first side of the first and second dies, the signal line (M0_1) continuous over the first device layer and the second device layer and a backside power rail (BM0_1 [0040]) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the backside power rail has a longest dimension along a same direction as a longest dimension of the signal line, and wherein the first device layer and the second device layer are vertically between the backside power rail and the signal line. Chen is silent with respect to “the second die separated from the second die by a scribe region”. FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chen, as taught by Shue. The ordinary artisan would have been motivated to modify Chen in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). Regarding Claim 2 FIG. 1 of Shue discloses the signal line (108I) is coupled to the first plurality of metallization layers (124z) of the first die by a first via stack of the first die, and the signal line is coupled to the second plurality of metallization layers of the second die by a second via stack of the second die. Regarding Claim 4 FIG. 1 of Shue discloses the first device layer and the second device layer are both logic device layers, or are both SRAM device layers [0018]. Regarding Claim 5 FIG. 1 of Shue discloses the first device layer is a logic device layer, and the second device layer is an SRAM device layer [0018]. . Regarding Claim 6 FIG. 1 of Chen discloses an integrated circuit structure, comprising: a first die (T1) comprising a first device layer (113) and a first plurality of metallization layers (MD_1, VD_1) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (T2) comprising a second device layer (114) and a second plurality of metallization layers (MD_2, VD_2) over the second device layer, the second device layer comprising a second plurality of integrated circuit devices (stacked); a front side power rail (M0_1) coupling the first die and the second die at a first side of the first and second dies, the front side power rail continuous over the first device layer and the second device layer; and a backside power rail (BM0_1 [0040]) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the backside power rail has a longest dimension along a same direction as a longest dimension of the signal line, and wherein the first device layer and the second device layer are vertically between the backside power rail and the front side power rail. Chen is silent with respect to “the second die separated from the second die by a scribe region”. FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chen, as taught by Shue. The ordinary artisan would have been motivated to modify Chen in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). Regarding Claim 11 FIG. 1 of Chen discloses a board [0107]; and a component coupled to the board, the component including an integrated circuit structure, comprising: a first die (T1) comprising a first device layer (113) and a first plurality of metallization layers (MD_1, VD_1) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (T2) comprising a second device layer (114) and a second plurality of metallization layers (MD_2, VD_2) over the second device layer, the second device layer comprising a second plurality of integrated circuit devices (stacked); a signal line coupling the first die and the second die at a first side of the first and second dies, the signal line (M0_1) continuous over the first device layer and the second device layer and a backside power rail (BM0_1 [0040]) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the backside power rail has a longest dimension along a same direction as a longest dimension of the signal line, and wherein the first device layer and the second device layer are vertically between the backside power rail and the signal line. Chen is silent with respect to “the second die separated from the second die by a scribe region”. FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chen, as taught by Shue. The ordinary artisan would have been motivated to modify Chen in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). The preamble “computing device” is a statement of intended use and is not considered to be of significance to claim construction, see MPEP 2111.02 II. During examination, statements in the preamble reciting the purpose or intended use of the claimed invention must be evaluated to determine whether the recited purpose or intended use results in a structural difference (or, in the case of process claims, manipulative difference) between the claimed invention and the prior art. If so, the recitation serves to limit the claim. See, e.g., In re Otto, 312 F.2d 937, 938, 136 USPQ 458, 459 (CCPA 1963). MPEP 2111.02. Since Shue discloses a substantially identical structure of Claim 18, the recitation “computing device” is treated as the purpose or intended use of the claimed invention. Regarding Claim 12 FIG. 1 of Shue discloses a memory coupled to the board [0018]. Regarding Claim 13 FIG. 5 of Shue discloses a communication chip coupled to the board [0070]. Regarding Claim 15 FIG. 5 of Shue discloses the component is a packaged integrated circuit die [0004]. Regarding Claim 16 FIG. 1 of Chen discloses a board [0107]; and a component coupled to the board, the component including an integrated circuit structure, comprising: a first die (T1); a second die (T2); a signal line (M0_1) coupling the first die and the second die at a first side of the first and second dies; a front side power rail (VSS) coupling the first die and the second die at a first side of the first and second dies; and a backside power rail (VDD) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, wherein the first device layer and the second device layer are vertically between the backside power rail and the signal line. Chen is silent with respect to “a first die comprising a first device layer and a first plurality of metallization layers over the first device layer; a second die comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region”. FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chen, as taught by Shue. The ordinary artisan would have been motivated to modify Chen in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). The preamble “computing device” is a statement of intended use and is not considered to be of significance to claim construction, see MPEP 2111.02 II. During examination, statements in the preamble reciting the purpose or intended use of the claimed invention must be evaluated to determine whether the recited purpose or intended use results in a structural difference (or, in the case of process claims, manipulative difference) between the claimed invention and the prior art. If so, the recitation serves to limit the claim. See, e.g., In re Otto, 312 F.2d 937, 938, 136 USPQ 458, 459 (CCPA 1963). MPEP 2111.02. Since Shue discloses a substantially identical structure of Claim 18, the recitation “computing device” is treated as the purpose or intended use of the claimed invention. Regarding Claim 17 FIG. 1 of Shue discloses a memory coupled to the board [0018]. Regarding Claim 18 FIG. 5 of Shue discloses a communication chip coupled to the board [0070]. Regarding Claim 20 FIG. 5 of Shue discloses the component is a packaged integrated circuit die [0004]. Claim 3 rejected under 35 U.S.C. 103 as being unpatentable over Chen and Shue, in view of Xie (U.S. Patent No. 9,754,923) of record. Regarding Claim 3 Chen as modified by Shue discloses Claim 1. Chen as modified by Shue is silent with respect to “the backside power rail is coupled to the first device layer of first die by a first backside via structure, and the backside power rail is coupled to second device layer of the second die by a second backside via structure”. FIG. 4 of Xie discloses a similar integrated circuit structure, wherein the backside power rail (108) is coupled to the first device layer of first die by a first backside via structure, and the backside power rail is coupled to second device layer of the second die by a second backside via structure. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chen, as taught by Xie. The ordinary artisan would have been motivated to modify Chen in the above manner for purpose of minimizing power loss (Abstract of Xie). Claims 1, 6, 11 and 16 rejected under 35 U.S.C. 103 as being unpatentable over Rubin (U.S. Patent Pub. No. 2020/0135646) of record, in view of Shue. Regarding Claim 1 FIG. 1 of Rubin discloses an integrated circuit structure, comprising: a first die (left) comprising a first device layer (left 118) and a first plurality of metallization layers (left BEOL) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (right) comprising a second device layer (right 118) and a second plurality of metallization layers (right BEOL) over the second device layer [0036], the second device layer comprising a second plurality of integrated circuit devices (stacked); a signal line (M1) coupling the first die and the second die at a first side of the first and second dies, the front side power rail continuous over the first device layer and the second device layer; and a backside power rail (102 [0036]) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the backside power rail has a longest dimension along a same direction as a longest dimension of the signal line, and wherein the first device layer and the second device layer are vertically between the backside power rail and the front side power rail. Rubin is silent with respect to “the second die separated from the second die by a scribe region”. FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Rubin, as taught by Shue. The ordinary artisan would have been motivated to modify Rubin in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). Regarding Claim 6 FIG. 1 of Rubin discloses an integrated circuit structure, comprising: a first die (left) comprising a first device layer (left 118) and a first plurality of metallization layers (left BEOL) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (right) comprising a second device layer (right 118) and a second plurality of metallization layers (right BEOL) over the second device layer [0036], the second device layer comprising a second plurality of integrated circuit devices (stacked); a front side power rail (M2) coupling the first die and the second die at a first side of the first and second dies, the front side power rail continuous over the first device layer and the second device layer; and a backside power rail (102 [0036]) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the backside power rail has a longest dimension along a same direction as a longest dimension of the signal line, and wherein the first device layer and the second device layer are vertically between the backside power rail and the front side power rail. Rubin is silent with respect to “the second die separated from the second die by a scribe region”. FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Rubin, as taught by Shue. The ordinary artisan would have been motivated to modify Rubin in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). Regarding Claim 11 FIG. 1 of Rubin discloses a board; and a component coupled to the board, the component including an integrated circuit structure, comprising: a first die (left) comprising a first device layer (left 118) and a first plurality of metallization layers (left BEOL) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (right) comprising a second device layer (right 118) and a second plurality of metallization layers (right BEOL) over the second device layer [0036], the second device layer comprising a second plurality of integrated circuit devices (stacked); a signal line (M1) coupling the first die and the second die at a first side of the first and second dies, the signal line continuous over the first device layer and the second device layer and a backside power rail (102 [0036]) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the backside power rail has a longest dimension along a same direction as a longest dimension of the signal line, and wherein the first device layer and the second device layer are vertically between the backside power rail and the signal line. Rubin is silent with respect to “the second die separated from the second die by a scribe region”. FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Rubin, as taught by Shue. The ordinary artisan would have been motivated to modify Rubin in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). The preamble “computing device” is a statement of intended use and is not considered to be of significance to claim construction, see MPEP 2111.02 II. During examination, statements in the preamble reciting the purpose or intended use of the claimed invention must be evaluated to determine whether the recited purpose or intended use results in a structural difference (or, in the case of process claims, manipulative difference) between the claimed invention and the prior art. If so, the recitation serves to limit the claim. See, e.g., In re Otto, 312 F.2d 937, 938, 136 USPQ 458, 459 (CCPA 1963). MPEP 2111.02. Since Shue discloses a substantially identical structure of Claim 18, the recitation “computing device” is treated as the purpose or intended use of the claimed invention. Regarding Claim 16 FIG. 1 of Rubin discloses a computing device [0093], comprising: a board (100); and a component coupled to the board, the component including an integrated circuit structure, comprising: a first die (left) comprising a first device layer (left 118) and a first plurality of metallization layers (left BEOL) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (right) comprising a second device layer (right 118) and a second plurality of metallization layers (right BEOL) over the second device layer, the second device layer comprising a second plurality of integrated circuit devices (stacked); a front side power rail (M2) coupling the first die and the second die at a first side of the first and second dies, the front side power rail continuous over the first device layer and the second device layer; and a backside power rail (102) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the backside power rail has a longest dimension along a same direction as a longest dimension of the signal line, and wherein the first device layer and the second device layer are vertically between the backside power rail and the front side power rail. Rubin is silent with respect to “the second die separated from the first die by a scribe region” FIG. 1 of Shue discloses a similar integrated circuit structure, comprising a first die (104a) comprising a first device layer (124y) and a first plurality of metallization layers (124z) over the first device layer; a second die (104b) comprising a second device layer and a second plurality of metallization layers over the second device layer, the second die separated from the second die by a scribe region (12). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Rubin, as taught by Shue. The ordinary artisan would have been motivated to modify Rubin in the above manner for purpose of reducing manufacturing cost and improving performance ([0072] of Shue). The preamble “computing device” is a statement of intended use and is not considered to be of significance to claim construction, see MPEP 2111.02 II. During examination, statements in the preamble reciting the purpose or intended use of the claimed invention must be evaluated to determine whether the recited purpose or intended use results in a structural difference (or, in the case of process claims, manipulative difference) between the claimed invention and the prior art. If so, the recitation serves to limit the claim. See, e.g., In re Otto, 312 F.2d 937, 938, 136 USPQ 458, 459 (CCPA 1963). MPEP 2111.02. Since Rubin discloses a substantially identical structure of Claim 18, the recitation “computing device” is treated as the purpose or intended use of the claimed invention. Claims 7-10 rejected under 35 U.S.C. 103 as being unpatentable over Rubin and Shue, in view of Tamaru (U.S. Patent Pub. No. 2012/0306101) of record. Regarding Claim 7 Rubin as modified by Shue discloses Claim 6. Rubin as modified by Shue is silent with respect to “the front side power rail is coupled to the first plurality of metallization layers of the first die by a first via stack of the first die, and the front side power rail is coupled to the second plurality of metallization layers of the second die by a second via stack of the second die”. FIG. 5 of Tamaru discloses a similar integrated circuit structure, wherein the front side power rail is coupled to the first plurality of metallization layers of the first die by a first via stack of the first die, and the front side power rail is coupled to the second plurality of metallization layers of the second die by a second via stack of the second die. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Rubin, as taught by Tamaru. The ordinary artisan would have been motivated to modify Rubin in the above manner for purpose of suppressing reduction in interconnection resources for signal lines ([0005] of Tamaru). Regarding Claim 8 FIG. 1 of Tamaru discloses the backside power rail is coupled to the first device layer of first die by a first backside via structure, and the backside power rail is coupled to second device layer of the second die by a second backside via structure. Regarding Claim 9 FIG. 1 of Shue discloses the first device layer and the second device layer are both logic device layers, or are both SRAM device layers [0018]. Regarding Claim 10 FIG. 1 of Shue discloses the first device layer is a logic device layer, and the second device layer is an SRAM device layer [0018]. Claim 14 rejected under 35 U.S.C. 103 as being unpatentable over Chen and Shue, in view of Zhu (CN 101202545) of record. Regarding Claim 14 Chen as modified by Shue discloses Claim 11. Chen as modified by Shue is silent with respect to “a battery coupled to the board”. FIG. 2 of Zhu discloses a similar computing device, comprising a battery coupled to the board [0078]. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Chen, as taught by Kusano. The ordinary artisan would have been motivated to modify Chen in the above manner for purpose of portable applications. Claim 19 rejected under 35 U.S.C. 103 as being unpatentable over Rubin and Shue, in view of Zhu. Regarding Claim 19 Rubin as modified by Shue discloses Claim 16. Rubin as modified by Shue is silent with respect to “a battery coupled to the board”. FIG. 2 of Zhu discloses a similar computing device, comprising a battery coupled to the board [0078]. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Rubin, as taught by Kusano. The ordinary artisan would have been motivated to modify Rubin in the above manner for purpose of portable applications. Pertinent Art FIG. 31 of Huang discloses an integrated circuit structure, comprising: a first die (left, such as N1/P1 of FIG. 1K) comprising a first device layer (left 260) and a first plurality of metallization layers (left 277) over the first device layer, the first device layer comprising a first plurality of integrated circuit devices (stacked); a second die (right, such as N2/P2 of FIG. 1K) comprising a second device layer (right 260) and a second plurality of metallization layers (right 277) over the second device layer, the second device layer comprising a second plurality of integrated circuit devices (stacked); a signal line coupling the first die and the second die at a first side of the first and second dies, the signal line continuous over the first device layer and the second device layer (FIG. 1K) and a backside power rail (284) coupling the first die and the second die at a second side of the first and second dies, the second side opposite the first side, the backside power rail continuous beneath the first device layer and the second device layer, wherein the first device layer and the second device layer are vertically between the backside power rail and the signal line. US 20080165109 discloses a signal line coupling the first die and the second die and a power rail coupling the first die and the second die. Lin (U.S. Patent Pub. No. 2020/0019671) discloses a device and a plurality of metallization layers vertically between a front side power rail and backside power rail; and vertically between the backside power rail and the signal line. Response to Arguments Applicant’s arguments with respect to Claims 1, 6, 11 and 16 have been considered but are moot because the arguments do not apply to any of the references being used in the current rejection. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHENG-BAI ZHU whose telephone number is (571)270-3904. The examiner can normally be reached on 11am – 7pm EST. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Chad Dicke can be reached on (571)270-7996. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SHENG-BAI ZHU/Primary Examiner, Art Unit 2897
Read full office action

Prosecution Timeline

Dec 23, 2021
Application Filed
Dec 05, 2022
Response after Non-Final Action
Jan 26, 2025
Non-Final Rejection — §103, §112
Apr 18, 2025
Response Filed
Apr 30, 2025
Final Rejection — §103, §112
Jul 08, 2025
Response after Non-Final Action
Aug 05, 2025
Request for Continued Examination
Aug 06, 2025
Response after Non-Final Action
Nov 12, 2025
Non-Final Rejection — §103, §112
Feb 12, 2026
Response Filed
Feb 22, 2026
Final Rejection — §103, §112 (current)

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Prosecution Projections

5-6
Expected OA Rounds
63%
Grant Probability
67%
With Interview (+4.8%)
2y 11m
Median Time to Grant
High
PTA Risk
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