Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 10, 11 and 21 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by
Shimizu et al. (US 2018/0204916 A1).
Regarding to claim 10, Shimizu et al. show all the elements of the claimed invention in figs. 1 and 9. It is a high electron mobility transistor (HEMT) ([0044]), comprising: a buffer layer [12]
([0045]) on a substrate [10] ([0045]); a barrier layer [16] ([0045]) on the buffer layer [12]; a p-
type semiconductor layer [22] ([0045]) on the barrier layer [16]; a first layer ([0095], "the silicon oxide layer [30] side is negative" which means the silicon oxide layer [30] has a negative charge) adjacent to and directly contacting one sidewall of the p-type semiconductor layer [22] (the right side sidewall of the p-type semiconductor layer [22]); wherein the first layer [30] is a single layer made of a single material (silicon oxide); and a second layer (a composite layer [28, 30, 32]) ([0045]) having a first positive charge region ([0095], "the second aluminum oxide layer [32] side is positive" which means the second aluminum oxide layer [32] has a positive charge) adjacent to another sidewall of the p-type semiconductor layer [22] (the left side sidewall of the p-type semiconductor layer [22]).
Regarding to claim 11, Shimizu et al. further disclose a passivation layer [34] ([0045]) on the
p-type semiconductor layer [22]; a gate electrode [24] ([0045]) on the passivation layer [34];
and a source electrode [18] ([0045]) and a drain electrode [20] ([0045]) adjacent to two sides of
the gate electrode [24].
Regarding to claim 21, Shimizu et al. further disclose the second layer [28, 30, 32] directly contacts another sidewall of the p-type semiconductor layer [22] ([28, 30, 32] is in direct contact with the left side sidewall of the p-type semiconductor layer [22]).
Response to Arguments
Applicant's arguments filed 2/4/26 have been fully considered but they are not persuasive. It is urged, in page 6 of the remarks, that Shimizu fails to disclose that the first layer is a single layer made of a single material. However, Shimizu does disclose that the first layer [30] is a single layer made of a single material (silicon oxide).
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to STEVEN HO YIN LOKE whose telephone number is (571)272-1657. The examiner can normally be reached 10 am to 6:30 pm.
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/STEVEN H LOKE/Supervisory Patent Examiner, Art Unit 2818
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