Prosecution Insights
Last updated: April 19, 2026
Application No. 17/747,166

Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Non-Final OA §102§103§112
Filed
May 18, 2022
Examiner
CHAMBLISS, ALONZO
Art Unit
2897
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Micron Technology, Inc.
OA Round
2 (Non-Final)
90%
Grant Probability
Favorable
2-3
OA Rounds
2y 3m
To Grant
65%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allow Rate
1050 granted / 1168 resolved
+21.9% vs TC avg
Minimal -25% lift
Without
With
+-25.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
24 currently pending
Career history
1192
Total Applications
across all art units

Statute-Specific Performance

§101
1.7%
-38.3% vs TC avg
§103
35.5%
-4.5% vs TC avg
§102
36.2%
-3.8% vs TC avg
§112
14.8%
-25.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1168 resolved cases

Office Action

§102 §103 §112
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . The preliminary amendment filed on 5/18/2022 has been fully considered and made of record in this application. Election/Restrictions Applicant’s election of claims 1-29 and 42 in the reply filed on 5/19/2025 is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)). Claims 29 and 42 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected species claim, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 5/19/2025. Information Disclosure Statement The information disclosure statement (IDS) submitted on 5/19/2025 and 9/15/2025 was filed after the mailing date of the Non-final rejection on 10/31/2025. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Specification The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. The following title is suggested: “METHOD OF FABRICATING MEMORY ARRAY HAVING STRINGS OF MEMORY CELLS ”. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 10, 14, and 26 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. In claims 10, 14, and 26, the phrase “ the metal oxide and the metal material are everywhere separated by insulator material ” is vague and indefinite since it is not clear from the claim if the separation of the oxide and metal layers are separated everywhere on the side, bottom, or upper surface of the metal oxide layer. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – Claims 20-24 and 26 are rejected under 35 U.S.C. 102(a)(2) as being clearly anticipated by Hopkins et al. (US 11,282,847). . The applied reference has a common assignee with the instant application. Based upon the earlier effectively filed date of the reference, it constitutes prior art under 35 U.S.C. 102(a)(2). This rejection under 35 U.S.C. 102(a)(2) might be overcome by: (1) a showing under 37 CFR 1.130(a) that the subject matter disclosed in the reference was obtained directly or indirectly from the inventor or a joint inventor of this application and is thus not prior art in accordance with 35 U.S.C. 102(b)(2)(A); (2) a showing under 37 CFR 1.130(b) of a prior public disclosure under 35 U.S.C. 102(b)(2)(B) if the same invention is not being claimed; or (3) a statement pursuant to 35 U.S.C. 102(b)(2)(C) establishing that, not later than the effective filing date of the claimed invention, the subject matter disclosed in the reference and the claimed invention were either owned by the same person or subject to an obligation of assignment to the same person or subject to a joint research agreement. With respect to Claims 20-24, Hopkins teaches forming a memory array comprising strings of memory cells. Forming a lower portion 18L of a stack that will comprise vertically-alternating first tiers and second tiers on a substrate 11. The stack comprising laterally-spaced memory-block regions 58, wherein the lower portion 18L comprising rails 15 that are individually between immediately-laterally-adjacent of the memory-block regions 58. The rails 15 comprising sacrificial material 47 that comprises metal oxide directly above metal material 44 or 61 (i.e. WSix or silicon dioxide). The metal oxide and the metal material comprising different compositions relative one another. Forming the vertically-alternating first tiers 20 and second tiers 22 of an upper portion of the stack directly above the lower portion 18L. Material of the first tiers being of different composition from material of the second tiers. Forming trenches 40, 79 into the upper portion to the rails 15 and removing the sacrificial material of the rails through the trenches 40, 79. Forming channel-material strings 37, 38 that extend through the first tiers and the second tiers in the memory-block regions (see col. 3 lines 10-15, col. 4 lines 35-38, col. 5 lines 1-67, col. 6 lines 1-67, and col. 7 lines 1-67; Figs. 15-25). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. Claims 25 is rejected under 35 U.S.C. 103 as being unpatentable over Hopkins et al. (US 11,282,847) as applied to claims 20 and 24 above, and further in view of Yang et al. (US 2002/0036313). Hopkins discloses the claimed invention except for the metal oxide comprises aluminum oxide. However, Yang discloses a memory cell having a dielectric layer made of a metal oxide comprises aluminum oxide which can be used instead of tungsten oxide (see claim 81). Thus, Hopkins and Yang have substantially the same environment of a substrate supporting a memory array. Therefore, one skilled in the art before the effective filing date of the claimed invention would readily recognize substituting aluminum oxide for the tungsten oxide of Hopkins, since the aluminum oxide would facilitate in reliable dielectric material for isolating metal layers in a memory cell as taught by Yang. Allowable Subject Matter Claims 1-9, 11-13, 15, 16, and 19 are allowed. Claims 27 and 28 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowance subject matter: none of the prior art of record does not teach or suggest the combination of the plugs comprising sacrificial material that comprises metal oxide directly above metal material. Forming the vertically alternating first tiers and second tiers of an upper portion of the stack directly above the lower portion. Forming channel openings into the upper portion to the plugs. Removing the sacrificial material of the plugs through the channel openings and thereafter forming a channel material string in individual of the channel openings along with the other limitations of claim 1. Forming a second vertical stack aside the first vertical stack, the second vertical stack comprising an upper portion directly above a lower portion. The upper portion in the second vertical stack comprising vertically-alternating tiers that are of different composition relative one another. The lower portion 18L in the second vertical stack comprising dummy plugs that comprise the metal oxide directly above the metal material, the dummy plugs remaining in a finished circuitry construction that comprises the memory array in claim 27. A first vertical stack, and further comprising forming a second vertical stack aside the first vertical stack, the second vertical stack comprising an upper portion directly above a lower portion. The upper portion in the second vertical stack comprising vertically-alternating tiers that are of different composition relative one another. The lower portion in the second vertical stack comprising dummy rails comprising the metal oxide directly above the metal material. The dummy rails remaining in a finished circuitry construction that comprises the memory array in claim 28. The prior art made of record and not relied upon is cited primarily to show the product of the instant invention. Conclusion 18. Any inquiry concerning the communication or earlier communications from the examiner should be directed to Alonzo Chambliss whose telephone number is (571) 272-1927. If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Jacob Y. Choi can be reached on (469) 270-9060. The fax phone number for the organization where this application or proceeding is assigned is 571 - 273- 8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system Status information for published applications may be obtained from either Private PMR or Public PMR. Status information for unpublished applications is available through Private PMR only. For more information about the PMR system see hittp://pair-dkect.uspto. gov. Should you have questions on access to the Private PMR system contact the Electronic Center (EBC) at 866-217-9197 (toll-free). AC/November 1, 2025 /Alonzo Chambliss/ Primary Examiner, Art Unit 2897
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Prosecution Timeline

May 18, 2022
Application Filed
May 18, 2022
Response after Non-Final Action
Mar 22, 2023
Response after Non-Final Action
Nov 01, 2025
Non-Final Rejection — §102, §103, §112
Jan 08, 2026
Response Filed
Apr 09, 2026
Non-Final Rejection — §102, §103, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

2-3
Expected OA Rounds
90%
Grant Probability
65%
With Interview (-25.2%)
2y 3m
Median Time to Grant
Moderate
PTA Risk
Based on 1168 resolved cases by this examiner. Grant probability derived from career allow rate.

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