Prosecution Insights
Last updated: April 19, 2026
Application No. 17/798,164

LIGHT-EMITING ELEMENT

Non-Final OA §102§112
Filed
Aug 08, 2022
Examiner
GUPTA, RAJ R
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Sony Semiconductor Solutions Corporation
OA Round
1 (Non-Final)
68%
Grant Probability
Favorable
1-2
OA Rounds
2y 11m
To Grant
82%
With Interview

Examiner Intelligence

Grants 68% — above average
68%
Career Allow Rate
417 granted / 614 resolved
At TC average
Moderate +14% lift
Without
With
+13.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
15 currently pending
Career history
629
Total Applications
across all art units

Statute-Specific Performance

§101
1.4%
-38.6% vs TC avg
§103
52.4%
+12.4% vs TC avg
§102
25.4%
-14.6% vs TC avg
§112
15.8%
-24.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 614 resolved cases

Office Action

§102 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 3 and 8 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 3 recites the limitation “a distance between the circumferential surfaces” in lines 2-3 of the claim. There is insufficient antecedent basis for this limitation in the claim. Claims 1 and 2, from which claim 3 depends, refer only to a single circumferential surface. For the purposes of examination with regard to the prior art, this limitation will be treated as if referring to a perimeter of the circumferential surface taken parallel to the first surface and second surface. Claim 8 recites the limitation "the first electrode" in line 3 of the claim. There is insufficient antecedent basis for this limitation in the claim. For the purposes of examination with regard to the prior art, this claim will be treated as if depending from claim 14, which does provide sufficient antecedent basis for the claim. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1-18 is/are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by Saito et al. (US 2016/0148973). With regard to claim 1, Saito teaches, in Fig 3, a light-emitting element, comprising: a stacked body (20) that is a stacked body including a first semiconductor layer (22) having a first semiconductor type ([0095]), a second semiconductor layer (21) having a second semiconductor type ([0095]), and an active layer (23) sandwiched between the first semiconductor layer and the second semiconductor layer, and has a first surface (201) that is a surface of the first semiconductor layer on a side opposite to the active layer, a second surface (202) that is a surface of the second semiconductor layer on a side opposite to the active layer, and a circumferential surface (203) that connects the first surface and the second surface to each other and includes an end surface of the active layer, a groove (multiple instances in 210) being formed in the first semiconductor layer, the groove being formed from the first surface toward the active layer, having a depth such that the groove is separated from the active layer, and extending in a direction parallel to the first surface ([0098]-[0099]); a light-emitting surface (2012) that is positioned on the first surface on a side opposite to the active layer and emits light generated in the active layer ([0098]-[0099]); and a reflecting body (50) that reflects light emitted from the end surface toward the groove. With regard to claim 2, Saito teaches, in Fig 3, that the reflecting body covers the second surface and the circumferential surface and reflects light emitted from the second surface and the circumferential surface toward the light- emitting surface ([0101]-[0102]). With regard to claim 3, Saito teaches, in Fig 3, that the circumferential surface is inclined such that a distance between the circumferential surfaces increases from the second surface toward the first surface (see figure). With regard to claim 4, Saito teaches, in Fig 3, that the groove has a V-shaped shape, a U-shaped shape, or a polygonal shape as a cross-sectional shape in a plane perpendicular to a direction in which the groove extends (see figure). With regard to claim 5, Saito teaches, in Fig 3, that a groove wall of the groove has a vertical surface shape, an inclined surface shape, or a curved surface shape with respect to the light-emitting surface (see figure). With regard to claim 6, Saito teaches, in Fig 3, that the groove wall of the groove has a smooth surface shape or a recessed and projecting surface shape (see figure). With regard to claim 7, Saito teaches, in Fig 3, that the groove extends in a direction parallel to or non- parallel to a peripheral edge of the light-emitting surface as viewed from a direction perpendicular to the light-emitting surface ([0099]). With regard to claim 8, Saito teaches, in Fig 3, that the groove includes a plurality of grooves provided between the first electrode (710) and the circumferential surface (see figure). With regard to claim 9, Saito teaches, in Fig 3, that the groove extends linearly or curvedly as viewed from a direction perpendicular to the light-emitting surface ([0099]). With regard to claim 10, Saito teaches, in Fig 3, that the groove is intermittently formed (see figure). With regard to claim 11, Saito teaches, in Fig 3, that the groove has a constant groove width or a non-constant groove width as viewed from a direction perpendicular to the light-emitting surface ([0099]). With regard to claim 12, Saito teaches, in Fig 3, that the groove is covered with a dielectric film (40) and the dielectric film forms the groove wall of the groove (see figure). With regard to claim 13, Saito teaches, in Fig 3, that the groove is filled with a dielectric material (40) or no dielectric material. With regard to claim 14, Saito teaches, in Fig 3, a first electrode (710) that is provided on the first surface and is electrically connected to the first semiconductor layer; and a second electrode (720) that is provided on the second surface and is electrically connected to the second semiconductor layer, wherein the groove is formed between the first electrode and the circumferential surface (see figure). With regard to claim 15, Saito teaches, in Fig 3, that the groove is formed in a cyclic shape surrounding the first electrode as viewed from a direction perpendicular to the light-emitting surface ([0099]). With regard to claim 16, Saito teaches, in Fig 3, that the first electrode crosses the groove (see figure). With regard to claim 17, Saito teaches, in Fig 3, that the first electrode is electrically connected to the first semiconductor layer inside the groove (through cladding 222). With regard to claim 18, Saito teaches, in Fig 3, that the stacked body further includes a hole-shaped recessed portion (another instance of a recess of 210, other than the claimed groove) that is formed from the first surface toward the active layer in the first semiconductor layer and has a depth such that the hole-shaped recessed portion is separated from the active layer, and a dielectric film (40) is formed on an inner surface of the hole-shaped recessed portion. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to RAJ R GUPTA whose telephone number is (571)270-5707. The examiner can normally be reached 9:30AM-4PM, 8PM-10PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Sue Purvis can be reached at 5712721236. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /RAJ R GUPTA/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Aug 08, 2022
Application Filed
Feb 07, 2026
Non-Final Rejection — §102, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
68%
Grant Probability
82%
With Interview (+13.7%)
2y 11m
Median Time to Grant
Low
PTA Risk
Based on 614 resolved cases by this examiner. Grant probability derived from career allow rate.

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