Prosecution Insights
Last updated: October 26, 2026
Application No. 17/827,356

HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES

Non-Final OA §112
Filed
May 27, 2022
Examiner
RICHARDS, NORMAN DREW
Art Unit
2892
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Applied Materials Inc.
OA Round
3 (Non-Final)
52%
Grant Probability
Moderate
3-4
OA Rounds
0m
Est. Remaining
66%
With Interview

Examiner Intelligence

Grants 52% of resolved cases
52%
Career Allowance Rate
43 granted / 83 resolved
-16.2% vs TC avg
Moderate +15% lift
Without
With
+14.6%
Interview Lift
resolved cases with interview
Typical timeline
3y 4m
Avg Prosecution
4 currently pending
Career history
95
Total Applications
across all art units

Statute-Specific Performance

§103
54.4%
+14.4% vs TC avg
§102
28.7%
-11.3% vs TC avg
§112
12.5%
-27.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 83 resolved cases

Office Action

§112
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 11/18/2025 has been entered. Response to Amendment The supplemental reply filed on 7/2/2026 was not entered because supplemental replies are not entered as a matter of right except as provided in 37 CFR 1.111(a)(2)(ii). The 7/2/2026 reply is not clearly limited to placement of the application in condition for allowance. This Office action is responsive to the amendment filed in the 11/18/2025 submission. Claims 1-20 are pending with claims 18-20 as withdrawn. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claim 3 is rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 3 recites the plasma power less than or about 2,000 W. Claim 3 depends from claim 1. Claim 1 has been amended to recite the plasma power less than 500 W. Claim 3 is indefinite because it claims a broader range, and higher values, for the plasma power as compared to claim 1 from which it depends. How can the plasma power be limited to less than 500 W while also being up to 2,000 W? Allowable Subject Matter Claims 1, 2 and 4-17 are allowed. The following is a statement of reasons for the indication of allowable subject matter: With regard to claim 1, the prior art does not teach, disclose or suggest the invention as claimed including forming the plasma of the oxygen-containing precursor in a remote plasma system of the semiconductor processing chamber at a plasma power of less than 500W, in combination with the remainder of the limitations claimed. With regard to claim 10, the prior art does not teach, disclose or suggest the invention as claimed including forming plasma effluents of a oxygen-containing precursor in a plasma region of a semiconductor processing chamber where a substrate is positioned in a processing region of the semiconductor processing chamber and wherein the plasma region is physically separated from the processing region by either or both of a showerhead and an ion suppressor, in combination with the remainder of the limitations claimed. Of note is WO 2021/178399 to Fischer et al., which teaches a similar method. However, Fischer et al. do not perform step iv) of contacting the oxidized portion of molybdenum with the fluorine containing precursor as Fischer first contacts the oxidized molybdenum with a boron species and uses the fluorine precursor to remove the boron oxide. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to N. Drew RICHARDS whose telephone number is (571)272-1736. The examiner can normally be reached M - F 7:00 - 4:00. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /NORMAN D RICHARDS/Supervisory Patent Examiner, Art Unit 2892
Read full office action

Prosecution Timeline

May 27, 2022
Application Filed
Jan 14, 2025
Non-Final Rejection mailed — §112
Apr 08, 2025
Response Filed
Aug 20, 2025
Final Rejection mailed — §112
Nov 18, 2025
Request for Continued Examination
Nov 22, 2025
Response after Non-Final Action
Sep 29, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12757437
TRENCH-GATE SEMICONDUCTOR DEVICE WITH TRENCH INCLUDING BURIED SOURCE
4y 8m to grant Granted Oct 06, 2026
Patent 12733491
SEMICONDUCTOR DEVICE INCLUDING LOWER SEMICONDUCTOR PACKAGE HAVING HEAT SINCE PATTERN
2y 2m to grant Granted Sep 08, 2026
Patent 12720882
OPTICAL DETECTION DEVICE INCLUDING INITIALIZATION CIRCUIT CONFIGURED TO IMPROVE DETECTION ACCURACY
4y 0m to grant Granted Aug 25, 2026
Patent 12713991
Power Semiconductor Module
4y 2m to grant Granted Aug 18, 2026
Patent 12707905
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING A CAP INSULATING LAYER
4y 2m to grant Granted Aug 11, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

3-4
Expected OA Rounds
52%
Grant Probability
66%
With Interview (+14.6%)
3y 4m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 83 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month