Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status.
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claims 1-5 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Shimizu et
al. (US 2018/0204916 A1).
Regarding claim 1, Shimizu et al. show all the elements of the claimed invention in
figs. 1 and 9. It is a high electron mobility transistor (HEMT) ([0044]), comprising: a
buffer layer [12] ([0045]) on a substrate [10] ([0045]); a barrier layer [28] on the
buffer layer [12]; a p-type semiconductor layer [22] ([0045]) on the barrier layer [28];
and a first layer [30] ([0045]) adjacent to a first side (right side) of the p-type
semiconductor layer [22] and on and directly contacting the barrier layer [28] without
extending to a second side (left side) of the p-type semiconductor layer [22], wherein the first layer [30] is a single layer made of a single material (silicon oxide) [0095].
Regarding claim 2, Shimizu et al. further disclose the first layer [30] comprises
a negative charge region ([0095], "silicon oxide layer [30] side is negative" which means
silicon oxide layer [30] has negative charge.).
Regarding claim 3, Shimizu et al. further disclose a second layer [28, 30, 32] ([0045])
adjacent to the second side (left side) of the p-type semiconductor layer [22] without
extending to the first side (right side) of the p-type semiconductor layer [22].
Regarding claim 4, Shimizu et al. further disclose the second layer comprises a first
positive charge region ([0095], "second aluminum oxide layer [32] side is positive" which
means second aluminum oxide layer [32] has positive charge.).
Regarding claim 5, Shimizu et al. further disclose a passivation layer [34] ([0045]) on the p-type semiconductor layer [22]; a gate electrode [24] ([0045]) on the passivation layer [34] and between the first layer ([30] on right side of the p layer [22]) and the second layer ([28, 30, 32] on the left side of the p layer [22]; and a source electrode [18] ([0045]) and a drain electrode [20] ([0045]) adjacent to two sides of the gate electrode [24].
Response to Arguments
Applicant's arguments filed 2/4/26 have been fully considered but they are not persuasive. It is urged, in page 6 of the remarks, that Shimizu fails to disclose that the first layer is a single layer made of a single material. However, as mentioned in the rejection, layer [30] is a single layer made of a single material (silicon oxide).
The examiner has considered the NPL reference cited in the parent application.
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to STEVEN HO YIN LOKE whose telephone number is (571)272-1657. The examiner can normally be reached 10 am to 6:30 pm.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, John Fristoe can be reached at (571)272-4926. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/STEVEN H LOKE/Supervisory Patent Examiner, Art Unit 2818
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