Prosecution Insights
Last updated: April 19, 2026
Application No. 17/847,257

PACKAGING ARCHITECTURE WITH TRENCH VIA ROUTING FOR ON-PACKAGE HIGH-SPEED INTERCONNECTS

Non-Final OA §102
Filed
Jun 23, 2022
Examiner
ULLAH, ELIAS
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Intel Corporation
OA Round
1 (Non-Final)
84%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
92%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allow Rate
700 granted / 829 resolved
+16.4% vs TC avg
Moderate +8% lift
Without
With
+8.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
22 currently pending
Career history
851
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
32.8%
-7.2% vs TC avg
§102
55.7%
+15.7% vs TC avg
§112
7.8%
-32.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 829 resolved cases

Office Action

§102
DETAILED ACTION Election/Restrictions Applicant’s election without traverse of claims 1-16 in the reply filed on October 27, 2025 is acknowledged. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-2, 7-9 and 16 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Dhakal et al. (Dhakal, US 2021/0028123 A1) Regarding claim 1, Dhakal shows a microelectronic assembly, comprising: a package substrate (substrate 130 in FIG. 1A) comprising a conductive trace (conductive line 118 in FIG. 1A and [0014]) in a dielectric material ( dielectric material 132), the conductive trace (conductive line 118 and [0014]) surrounded by a conductive structure ( conductive structure 108/113 in FIG. 1A and [0017]) coupled to a ground connection (ground connection VSS in FIG. 1A), the package substrate further comprising metallization layers ( metallization layers between dielectric layer 132 in FGI. 1A) alternating with dielectric layers of the dielectric material (dielectric layer 132); and an integrated circuit (IC) die ( chip 102) coupled to a surface of the package substrate (substrate 130), the IC die coupled to the conductive trace by a conductive pathway ([0014]) ,wherein: the dielectric layers and the metallization layers are parallel to the surface of the package substrate (substrate 130),the conductive trace comprises a trench via (via 118) in at least one dielectric layer (dielectric layer 132), and the conductive structure comprises grounded plates ( conductive plate 110/111) extending across a length and width of the package substrate in the metallization layers on either side of the conductive trace (conductive line 118). Regarding claim 2, Dhakal shows a microelectronic assembly, comprising: a package substrate (substrate 130 in FIG. 1A) comprising, wherein the conductive structure (conductive structure 108/113 in FIG. 1A) further comprises grounded traces (conductive line 118) in the metallization layers between the grounded plates ( VSS/ 111 in FIG. 1A). Regarding claim 7, Dhakal shows a microelectronic assembly, comprising: a package substrate (substrate 130 in FIG. 1A) comprising, wherein the conductive trace ( conductive line 118 in FIG. 1A) comprises a plurality of parallel metal plates ( plates 111/VSS) in adjacent metallization layers (metal layer 118) and trench vias in the dielectric layers between the adjacent metallization layers ( metal layer 118), the trench vias in continuous contact with adjacent metal plates along a length of the conductive trace (conductive line 118). Regarding claim 8, Dhakal shows a microelectronic assembly, comprising: a package substrate (substrate 130 in FIG. 1A) comprising, wherein conductive trace (conductive line 118) is a first conductive trace, and the microelectronic assembly further comprises a second conductive trace ( conductive line 118 i.e. plurality of conductive line 118) parallel to and coplanar with the first conductive trace ( conductive line 118). Regarding claim 9, Dhakal shows a package substrate, comprising: a first ground plate ( plate 111/VSS/110 in FIG. 1A) and a second ground plate (plates 11/VSS/110) coupled to a ground connection ( connection 113);a dielectric layer ( dielectric layer 132) between the first ground plate (plates 111/VSS/110) and the second ground plate (plates VSS/111/110); and a conductive trace comprising a trench via ( via 118) in the dielectric layer (dielectric layer 132), the trench via not in contact with the first ground plate (VSS/111/110) or the second ground plate (VSS/110/111),wherein: the dielectric layer comprises a dielectric material ( dielectric layer 132), and the trench via is parallel to the first ground plate and the second ground plate (VSS/110/111). Regarding claim 16, Dhakal shows a package substrate, further comprising another conductive trace ( conductive line 118) parallel to and coplanar with the conductive trace (conductive line 118), wherein the another conductive trace is separated from the conductive trace by a trace spacing filled with the dielectric material (dielectric layer 132). Allowable Subject Matter Claims 3-6, 10-15 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ELIAS M ULLAH whose telephone number is (571)272-1415. The examiner can normally be reached M-F at 8AM-5PM EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Yara Green can be reached at 571-270-3035. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ELIAS ULLAH/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Jun 23, 2022
Application Filed
Feb 15, 2023
Response after Non-Final Action
Nov 19, 2025
Non-Final Rejection — §102
Apr 06, 2026
Interview Requested
Apr 15, 2026
Applicant Interview (Telephonic)
Apr 15, 2026
Examiner Interview Summary

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
84%
Grant Probability
92%
With Interview (+8.1%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 829 resolved cases by this examiner. Grant probability derived from career allow rate.

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