Prosecution Insights
Last updated: April 19, 2026
Application No. 17/853,237

SEMICONDUCTOR PACKAGE

Non-Final OA §102§103
Filed
Jun 29, 2022
Examiner
ZABEL, ANDREW JOHN
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
3 (Non-Final)
90%
Grant Probability
Favorable
3-4
OA Rounds
3y 5m
To Grant
99%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allow Rate
26 granted / 29 resolved
+21.7% vs TC avg
Strong +16% interview lift
Without
With
+15.8%
Interview Lift
resolved cases with interview
Typical timeline
3y 5m
Avg Prosecution
28 currently pending
Career history
57
Total Applications
across all art units

Statute-Specific Performance

§103
61.4%
+21.4% vs TC avg
§102
24.5%
-15.5% vs TC avg
§112
12.9%
-27.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 29 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after allowance or after an Office action under Ex Parte Quayle, 25 USPQ 74, 453 O.G. 213 (Comm'r Pat. 1935). Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, prosecution in this application has been reopened pursuant to 37 CFR 1.114. Applicant's submission filed on 10/27/2025 has been entered. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 21 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Su et al (US 20120061853 A1). Su et al teaches [claim 21] A semiconductor package, comprising: a substrate; a first semiconductor chip on the substrate, the first semiconductor chip having a first sidewall and a second sidewall different from the first sidewall (figure 4, paragraph 0036, where element 100 is the semiconductor package, element 125 is the substrate, and element 110 is the first semiconductor chip on the substrate), a second semiconductor chip on the substrate and laterally spaced apart from the first semiconductor chip (figure 4, paragraph 0036, element 115 ist he second semiconductor chip and is laterally spaced apart from the first semiconductor chip [element 110] and on the substrate [element 125]); and a molding layer on the substrate, the molding layer being between the first sidewall of the first semiconductor chip and a sidewall of the second semiconductor chip (figure 4, paragraph 0040, element 155 and 180 is the molding layer, and is situated between the first sidewall of the first semiconductor chip [right hand side of element 110] and the sidewall of the second semiconductor chip [left-hand side of element 115]), wherein the molding layer exposes the second sidewall of the first semiconductor chip, wherein, between the first semiconductor chip and the second semiconductor chip, a bottom surface of the molding layer is vertically spaced apart from an upper surface of the substrate (figure 4, paragraph 0040, where elements 155 and 180 [molding layer] fills in between the semiconductor chips [elements 110 and 115] and exposes a second sidewall of the first semiconductor chip [left-hand side of element 110 is exposed], and is situated vertically away from the substrate [element 125]). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 22-23 is/are rejected under 35 U.S.C. 103 as being unpatentable over Su et al (US 20120061853 A1) in view of Huang et al (US 10867951 B2). Regarding claim 22, Su et al teaches all of the limitations of the parent claim, claim 1, but does not specifically disclose bumps between the substrate and the first semiconductor chip; and an under-fill layer between the substrate and the first semiconductor chip, the underfill layer covering sidewalls of the bumps, wherein the second sidewall of the first semiconductor chip is vertically aligned with an outer sidewall of the underfill-layer. However, Huang et al does teach a semiconductor package, further comprising: bumps between the substrate and the first semiconductor chip (figure 5b, element 64, where the first semiconductor chip is element 60); and an under-fill layer between the substrate and the first semiconductor chip, the underfill layer covering sidewalls of the bumps (figure 5b, element 72), wherein the second sidewall of the first semiconductor chip is vertically aligned with an outer sidewall of the under-fill layer (figure 5b, element 60E is the sidewall and is vertically aligned with element 72 [underfill layer]). It would have been obvious to one of ordinary skill in the art at the time of filing to have modified the teaches of Su et al to include the teachings of Huang in order to maximize conductivity between the semiconductor die and the any other circuit attached to the substrate in order to have a functioning semiconductor die. Regarding claim 23, Su et al further teaches The semiconductor package wherein the under-fill layer fills a gap between the bottom surface of the molding layer and the upper surface of the substrate (paragraph 0040, figure 4, where element 145 is the under-fill layer and fills the gap between the molding layer [elements 155 and 180] and the stop of the substrate [element 125]). Claim(s) 24 is/are rejected under 35 U.S.C. 103 as being unpatentable over Su et al (US 20120061853 A1) in view of Chen et al (US 11694975 B2). Regarding claim 24, Su et al teaches the semiconductor package of claim 1, wherein the molding layer includes: a first part between the first semiconductor chip and the second semiconductor chip (figure 4, element 155 and 180 is situated between the first and second semiconductor chips [elements 110 and 115 respectively]). Su et al does not specifically disclose a second part on an upper surface at an edge region of the substrate, wherein, when viewed in plan, the edge region of the substrate is between the second sidewall of the first semiconductor chip and a sidewall of the substrate, and wherein a top surface of the second part of the molding layer is at a level lower than a level of a top surface of the first part of the molding layer. However, Chen et al does teach a second part on a top surface at an edge region of the substrate, wherein, when viewed in plan, the edge region of the substrate is between the second sidewall of the first semiconductor chip and a sidewall of the substrate (Figures 1A and 1B, edge part is between the outside sidewall of element 134 and the outside sidewall of element 110), and wherein an upper surface of the second part of the molding layer is at a level lower than a level of a top surface of the first part of the molding layer (element 150 is the second part, element 135 is the first part where the top surface of element 150 is lower than the top surface of element 135). It would have been obvious to one of ordinary skill in the art at the time of filing to have modified the teaches of Su et al to incorporate the teachings of Chen in order to create a more stable package material by leveling the molding layer with the semiconductor die. Claim(s) 25 is rejected under 35 U.S.C. 103 as being unpatentable over Su et al (US 20120061853 A1) in view of Park et al (US 20150048519 A1). Regarding claims 25, Su et al teaches all of the limitations of the parent claim, claim 21, and further teaches the upper semiconductor chip having a first lateral surface and a second lateral surface different from the first lateral surface, wherein the molding layer is on the first lateral surface of the upper semiconductor chip, and wherein the molding layer is not on the second lateral surface of the upper semiconductor chip (figure 4, element 155 and 180 [molding layer] is on the first lateral side of element 110 [furthest to the right] but not on the other lateral side of said element [labeled second lateral surface]). Su et al does not specifically disclose a semiconductor package further comprising an upper semiconductor chip on the first semiconductor chip. However, Park does teach a semiconductor package further comprising an upper semiconductor chip on the first semiconductor chip (figure 6, element 5001 [upper semiconductor chip] on a lower semiconductor chip [element 4000]). It would have been obvious to one of ordinary skill in the art at the time of filing to have modified Su et al to incorporate the teachings of Park by layering the semiconductor dies such that the top layer does have a semiconductor die with one exposed side and one covered side by the molding layer in order to increase efficiency of the entire semiconductor system by incorporating more die into a smaller area thus increasing efficiency of packaging. It would have been obvious to one of ordinary skill in the art at the time of filing to have modified Su et al to incorporate the teachings of Park to create a larger molding layer than the substrate to maximize structural stability for stacked die on the substrate in order to stack more die and increase the density of stacked die in a semiconductor package. Claim(s) 26 is rejected under 35 U.S.C. 103 as being unpatentable over Su et al (US 20120061853 A1), and Park et al (US 20150048519 A1) in further view of Huang et al (US 10867951 B2). Su et al as modified teaches all of the limitations of the parent claim, claim 25, but does not specifically disclose [claim 26] wherein the upper semiconductor chip is provided in plural, an upper surface of the molding layer and an upper surface of an uppermost upper semiconductor chip among the upper semiconductor chips are at same vertical level. However, Huang et al does teach [claim 26] wherein the upper semiconductor chip is provided in plural, an upper surface of the molding layer and an upper surface of an uppermost upper semiconductor chip among the upper semiconductor chips are at same vertical level (figure 5B, col 7 lines 22-58, where element 62 is the molding layer around a plurality of upper semiconductor chips [element 60] where the modling layer is the same height as the plurality of upper semiconductor chips]). It would have been obvious to one of ordinary skill in the art at the time of filing to have modified the teachings of Su et al as modified to incorporate the teachings of Huang et al in order to support a plurality of structures by having the molding layer go to the top level of the upper semiconductor chip to provide structural stability and maximize performance of the package. Claim(s) 27-28 are rejected under 35 U.S.C. 103 as being unpatentable over Su et al (US 20120061853 A1), and Park et al (US 20150048519 A1) in further view of Hong et al (US 20140117506 A1) and Gang (US 20210066368 A1) Su et al as modified teaches the limitations of the parent claim, claim 25, but does not specifically disclose: [claim 27] the semiconductor package of claim 5, further comprising a molding pattern on a top surface of the first semiconductor chip, the molding pattern covering the first lateral surface of the upper semiconductor chip, wherein the molding pattern is between the molding layer and the first lateral surface of the upper semiconductor chip. [claim 28] the semiconductor package of claim 6, wherein the molding pattern exposes the second lateral surface of the upper semiconductor chip. However, Hong does teach [claim 27] a semiconductor package, further comprising a molding pattern on a top surface of the first semiconductor chip (figure 1A, element 250 [molding pattern] on top side of first semiconductor die [element 120]). It would have been obvious to one of ordinary skill in the art at the time of filing to have modified the teaches of Su et al as modified to incorporate the teachings of Hong to have placed a molding layer the top side of the first semiconductor chip in order to create a more stable semiconductor package structure. Su et al as further modified by Hong above does not specifically disclose: [claim 27] the molding pattern covering the first lateral surface of the upper semiconductor chip, wherein the molding pattern is between the molding layer and the first lateral surface of the upper semiconductor chip [claim 28] the semiconductor package of claim 6, wherein the molding pattern exposes the second lateral surface of the upper semiconductor chip. However Gang does teach [claim 27] the molding pattern covering the first lateral surface of the upper semiconductor chip, wherein the molding pattern is between the molding layer and the first lateral surface of the upper semiconductor chip (column 1 lines 38-48), [claim 28] a semiconductor package wherein the molding pattern exposes the second lateral surface of the upper semiconductor chip (column 1 lines 38-48). It would have been obvious to one of ordinary skill in the art at the time of filing to have modified the teaches of Su et al as modified to incorporate the teachings of Gang to have placed a molding layer on the lateral sides of the semiconductor chip as well as the top side of the first semiconductor chip in order to create a more stable semiconductor package structure. Allowable Subject Matter Claims 29-40 are allowed. Specifically, the limitations of independent claims 29 and 37 are all present in already allowable claims 11 and 16 from the office action dated 07/28/2025. Thus, claims 29 and 37 overcome the previous prior art. Additionally, dependent claims 30-36 and 38-40 further limit independent claims 29 and 37 and the combination thereof, thus are also in a state of allowance. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANDREW ZABEL whose telephone number is (703)756-4788. The examiner can normally be reached M-F 9-5PM ET. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jeff W Natalini can be reached at 572-272-2266. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANDREW ZABEL/Examiner, Art Unit 2818 /JEFF W NATALINI/Supervisory Patent Examiner, Art Unit 2818
Read full office action

Prosecution Timeline

Jun 29, 2022
Application Filed
Dec 10, 2024
Non-Final Rejection — §102, §103
Jan 09, 2025
Interview Requested
Jan 17, 2025
Examiner Interview Summary
Jan 17, 2025
Applicant Interview (Telephonic)
Mar 10, 2025
Response Filed
May 02, 2025
Final Rejection — §102, §103
May 10, 2025
Interview Requested
May 27, 2025
Interview Requested
Jun 04, 2025
Applicant Interview (Telephonic)
Jun 04, 2025
Examiner Interview Summary
Jul 07, 2025
Request for Continued Examination
Jul 09, 2025
Response after Non-Final Action
Oct 27, 2025
Request for Continued Examination
Nov 03, 2025
Response after Non-Final Action
Feb 03, 2026
Non-Final Rejection — §102, §103
Feb 13, 2026
Interview Requested
Feb 23, 2026
Interview Requested
Mar 04, 2026
Examiner Interview Summary
Mar 04, 2026
Applicant Interview (Telephonic)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
90%
Grant Probability
99%
With Interview (+15.8%)
3y 5m
Median Time to Grant
High
PTA Risk
Based on 29 resolved cases by this examiner. Grant probability derived from career allow rate.

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