Prosecution Insights
Last updated: April 19, 2026
Application No. 17/862,183

High-Aspect Ratio Electroplated Structures And Anisotropic Electroplating Processes

Non-Final OA §112
Filed
Jul 11, 2022
Examiner
WITTENBERG, STEFANIE S
Art Unit
1795
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Hutchinson Technology Incorporated
OA Round
5 (Non-Final)
54%
Grant Probability
Moderate
5-6
OA Rounds
3y 2m
To Grant
73%
With Interview

Examiner Intelligence

Grants 54% of resolved cases
54%
Career Allow Rate
361 granted / 667 resolved
-10.9% vs TC avg
Strong +19% interview lift
Without
With
+19.3%
Interview Lift
resolved cases with interview
Typical timeline
3y 2m
Avg Prosecution
59 currently pending
Career history
726
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
51.2%
+11.2% vs TC avg
§102
17.6%
-22.4% vs TC avg
§112
29.2%
-10.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 667 resolved cases

Office Action

§112
DETAILED ACTION Status of Claims Claims 1 and 4-20 are pending. Claims 2-3 are cancelled. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 30 January 2026 has been entered. Status of Objections and Rejections The previous grounds of rejection under 35 U.S.C 112a are withdrawn in view of Applicant’s amendment. The previous grounds of rejection under 35 U.S.C. 11b are withdrawn in view of Applicant’s amendment. All other rejections from the previous Office action are withdrawn in view of Applicant’s amendment. Specification The disclosure is objected to because of the following informalities: the specification refers to 1608 and 1622 as the first dielectric layer [0071] however in Figure 15 they are presented as different layers. Appropriate correction is required. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 10 and 19-20 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Regarding claims 10 and 19, the phrase “wherein the second set of high-aspect ratio electroplated structures are formed by etching the first conductive substrate” is indefinite because it is unclear how electroplated structures are formed by etching. Forming a structure by electroplating is an addition process whereas the process of etching is removing material. Therefore it is unclear how material is formed through a process of removal in regards to electroplated materials. Allowable Subject Matter Claims 1, 4-9 and 11-18 are allowed. The following is a statement of reasons for the indication of allowable subject matter: the prior art alone or in combination does not disclose or render obvious the combination of claim limitations of claims 1 or 12. In particular, the prior art does not disclose disposing a second dielectric layer on the first set of high-aspect ratio electroplated structures to fill each of a set of spaces between the first set of high-aspect ratio electroplated structures…forming a second set of high-aspect ratio electroplated structures…disposing a third dielectric layer on the second set of high-aspect ratio electroplated structures…wherein a thickness of the third layer…is less than a thickness of the first electric layer…or a thickness of the second dielectric layer according to claims 1 and 12. The closest prior art includes the teachings of Lieb et al. (US 2006/0012005) as described in the Office action dated 10 November 2025. Briefly, Lieb et al. disclose disposing an insulating glass layer on a conductive structure, forming conductive material on conductive structures, forming additional conductive material, forming additional glass insulating layers and disposing additional glass insulating layers between conductive areas (Figures 2 and 6-7). The remarks presented on pages 10-11 in the response dated 30 January 2026 are found persuasive. The prior art does not disclose the claimed layering and the claimed thickness of the third dielectric is less than the first dielectric layer or second dielectric layer. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US 6,701,613 Any inquiry concerning this communication or earlier communications from the examiner should be directed to STEFANIE S WITTENBERG whose telephone number is (571)270-7594. The examiner can normally be reached Monday - Friday, 7:00 am -4:00 pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Luan Van can be reached at (571) 272-8521. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Stefanie S Wittenberg/Primary Examiner, Art Unit 1795
Read full office action

Prosecution Timeline

Jul 11, 2022
Application Filed
Jul 31, 2024
Non-Final Rejection — §112
Oct 23, 2024
Response Filed
Jan 24, 2025
Final Rejection — §112
Apr 02, 2025
Request for Continued Examination
Apr 03, 2025
Response after Non-Final Action
May 21, 2025
Non-Final Rejection — §112
Aug 08, 2025
Response Filed
Nov 07, 2025
Final Rejection — §112
Jan 30, 2026
Request for Continued Examination
Feb 02, 2026
Response after Non-Final Action
Mar 24, 2026
Non-Final Rejection — §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

5-6
Expected OA Rounds
54%
Grant Probability
73%
With Interview (+19.3%)
3y 2m
Median Time to Grant
High
PTA Risk
Based on 667 resolved cases by this examiner. Grant probability derived from career allow rate.

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