Prosecution Insights
Last updated: October 02, 2026
Application No. 17/872,139

SEMICONDUCTOR PACKAGE

Non-Final OA §103§112
Filed
Jul 25, 2022
Priority
Oct 13, 2021 — RE 10-2021-0136157
Examiner
MUNOZ, ANDRES F
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
7 (Non-Final)
76%
Grant Probability
Favorable
7-8
OA Rounds
0m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allowance Rate
551 granted / 722 resolved
+8.3% vs TC avg
Strong +18% interview lift
Without
With
+17.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
42 currently pending
Career history
755
Total Applications
across all art units

Statute-Specific Performance

§101
0.9%
-39.1% vs TC avg
§103
48.9%
+8.9% vs TC avg
§102
24.6%
-15.4% vs TC avg
§112
20.8%
-19.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 722 resolved cases

Office Action

§103 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 9.8.2026 has been entered. Election/Restrictions Claims 3, 6-7 and 11-20 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected invention/species, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 1.10.2025. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-2, 4-5 and 8-10 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Regarding claim 1, “wherein the second molding layer comprises an upper portion disposed above the uppermost surface of the interposer and horizontally outward of an outermost side surface of the first molding layer relative to the first stacked chip, and a lower portion extending from the upper portion into and filling the trench” (emphasis added) is indefinite because it is unclear if “and horizontally outward of an outermost side surface of the first molding layer relative to the first stacked chip” is a modifier of the “second molding layer” or of the “upper portion” and this obscures the scope of the claim. It is treated as modifying either of the options listed above. None of dependent claims 2, 4-5 and 8-10 address this deficiency and are rejected along with base claim 1. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1, 2 and 4-5 are rejected under 35 U.S.C. 103 as being unpatentable over Choi et al. (US 20210143126 A1) in view of Shibita et al. (of record, US 20110074048 A1). Regarding claim 1, Choi discloses a semiconductor package (Fig. 1) comprising: an interposer (200); a first stacked chip (310/320) comprising a first semiconductor chip (310) disposed on the interposer and one or more second semiconductor chips (320) disposed on the first semiconductor chip; a first molding layer (330) surrounding the first stacked chip; and a second molding layer (600) surrounding the first molding layer and comprising a single, uniform, non-conductive material ([0051]), wherein an upper(most) surface of the first stacked chip is coplanar with an upper(most) surface of the second molding layer and an upper(most) surface of the first molding layer (said surfaces are coplanar due to the presence of element 700 in Fig. 1), and wherein the second molding layer (600) comprises an upper portion disposed above the uppermost surface of the interposer (200) and horizontally outward of an outermost side surface of the first molding layer relative to the first stacked chip (Fig. 1), PNG media_image1.png 579 863 media_image1.png Greyscale Choi fails to disclose wherein the second molding layer extends from an uppermost surface of the interposer into a trench of the interposer, wherein the trench is located entirely outside an outermost horizontal edge of the first stacked chip, wherein a depth of the trench is less than a height of the interposer, wherein the trench is defined in the interposer, and wherein the second molding layer comprises a lower portion extending from the upper portion into and filling the trench. Shibita discloses (Figs. 2-3) wherein the second molding layer (3) extends from an uppermost surface of the interposer (1+11a) into a trench (16) of the interposer, wherein the trench is located entirely outside an outermost horizontal edge of the and wherein the second molding layer (3) comprises a lower portion extending from the upper portion into and filling the trench (Figs. 2-3). PNG media_image2.png 488 636 media_image2.png Greyscale Note: under the proposed modification, the second molding layer 600 of Choi (Fig. 1) would extend into a trench (such as 16 of Shibita in Fig. 3) partially extending through Choi’s interposer 200; this proposed modification meets the claim. It would have been obvious to one of ordinary skill in the art, before the effective filing date, to include the trench and related arrangement of Shibita in Choi and arrive at the claimed invention so as to prevent moisture penetration (Shibita, [0031]). Regarding claim 2, Choi/Shibita discloses the semiconductor package of claim 1, wherein the second molding layer (600) covers at least a side surface of the first molding layer (330, Fig. 1). Regarding claim 4, Choi/Shibita discloses the semiconductor package of claim 2, wherein the second molding layer (600) does not cover the upper(most) surface of the first molding layer (330, Fig. 1). Regarding claim 5, Choi/Shibita discloses the semiconductor package of claim 1, wherein the first molding layer (330) and the second molding layer (600) are in direct contact with each other (Fig. 1). Claim 8 is rejected under 35 U.S.C. 103 as being unpatentable over Choi et al. (US 20210143126 A1) in view of Shibita et al. (of record, US 20110074048 A1) as applied to claim 1 above, and further in view of Kang et al. (of record, US 20140084456 A1). Regarding claim 8, Choi/Shibita fails to disclose the semiconductor package of claim 1, wherein each of outer surfaces of the second molding layer is not aligned with a side surface of the interposer in a vertical direction and is located inside the interposer in a horizontal direction. Kang discloses (Fig. 20) wherein each of outer surfaces of the second molding layer (substrate mold layer 600; para. [0273]) is not aligned with a side surface of the interposer (printed circuit board 500; para. [0263]) in a vertical direction and is located inside the interposer (500) in a horizontal direction. It would have been obvious to one of ordinary skill in the art, before the effective filling date, to incorporate the teachings of Kang into the device of Choi/Shibita to include each of outer surfaces of the second molding layer is not aligned with a side surface of the interposer in a vertical direction and is located inside the interposer in a horizontal direction for the purpose of allowing for multiple devices to be formed simultaneously and subsequently trimmed/sawed without risking damage to the molding layers or other components as would be understood by one skilled in the art and/or so as to minimize the amount of molding material needed to protect encapsulated devices. Claim 9 is rejected under 35 U.S.C. 103 as being unpatentable over Choi et al. (US 20210143126 A1) in view of Shibita et al. (of record, US 20110074048 A1) as applied to claim 1 above, and further in view of Kim et al. (of record, US 20180006006 A1). Regarding claim 9, Choi/Shibita fails to disclose the semiconductor package of claim 1, wherein the first semiconductor chip is a buffer chip configured to control the one or more second semiconductor chips, and wherein the one or more second semiconductor chips are memory cell chips. Kim discloses (Fig. 20) wherein the first semiconductor chip (C1) is a buffer chip configured to control the one of more second semiconductor chips (C2-C5), and wherein the one or more second semiconductor chips (C2-C5) are memory cell chips ( [0038] explains first chip can be a logic chip and second chip can be a memory chip, see also [0049]). It would have been obvious to one of ordinary skill in the art, before the effective filling date, to incorporate the teachings of Kim into the device of Choi/Shibita so as to provide for a packaged device with high degree of functionality with a reduced size (Kim, [0003]). Claim 10 is rejected under 35 U.S.C. 103 as being unpatentable over Choi et al. (US 20210143126 A1) in view of Shibita et al. (of record, US 20110074048 A1) as applied to claim 1 above, and further in view of Kang et al. (of record, US 20140084456 A1) and Chang et al (of record, US 20190273075 A1). Regarding claim 10, Choi/Shibita fails to disclose the semiconductor package of claim 1, wherein the first molding layer and the second molding layer are of different materials. Kang discloses (Fig. 20) wherein the first molding layer (160) and the second molding layer (600) are of different materials (different physical property described in [0274]). It would have been obvious to one of ordinary skill in the art before the time of the effective filling date of the invention to incorporate the teachings of Kang into the device Choi/Shibita to include the first molding layer and the second molding layer are of different materials for the purpose of allowing the different molding layers to have different physical properties such as different thermal expansion coefficients, viscosities, or gap-fill properties to allow for better device stability and structural integrity as evidenced by Chang ( [0052]). Claims 1, 2 and 5 are rejected under 35 U.S.C. 103 as being unpatentable over Ode et al. (of record, US 20110244628 A1) in view of Shibita et al. (of record, US 20110074048 A1). Regarding claim 1, Ode discloses a semiconductor package (Fig. 12) comprising: an interposer (21); a first stacked chip (22c/22/22a) comprising a first semiconductor chip (22c) disposed on the interposer and one or more second semiconductor chips (the rest of 22) disposed on the first semiconductor chip; a first molding layer (24) surrounding the first stacked chip; and a second molding layer (27) surrounding the first molding layer and comprising a single, uniform, non-conductive material (Fig. 12), wherein an upper(most) surface (at 22a) of the first stacked chip is coplanar with an upper (not uppermost) surface (abutting 22a) of the second molding layer (27) and an upper(most) surface of the first molding layer (24), and wherein the second molding layer (27) comprises an upper portion disposed above the uppermost surface of the interposer (21) and horizontally outward of an outermost side surface of the first molding layer (24) relative to the first stacked chip (Fig. 12), PNG media_image3.png 470 641 media_image3.png Greyscale Ode fails to disclose wherein the second molding layer extends from an uppermost surface of the interposer into a trench of the interposer, wherein the trench is located entirely outside an outermost horizontal edge of the first stacked chip, wherein a depth of the trench is less than a height of the interposer, wherein the trench is defined in the interposer, and wherein the second molding layer comprises a lower portion extending from the upper portion into and filling the trench. Shibita discloses (Figs. 2-3) wherein the second molding layer (3) extends from an uppermost surface of the interposer (1+11a) into a trench (16) of the interposer, wherein the trench is located entirely outside an outermost horizontal edge of the height of the interposer (1+11a), wherein the trench (16) is defined in the interposer (1+11a), and wherein the second molding layer (3) comprises a lower portion extending from the upper portion into and filling the trench (Figs. 2-3). PNG media_image2.png 488 636 media_image2.png Greyscale Note: under the proposed modification, the second molding layer 27 of Ode (Fig. 12) would extend into a trench (such as 16 of Shibita in Fig. 3) partially extending through Ode’s interposer 21; this proposed modification meets the claim. It would have been obvious to one of ordinary skill in the art, before the effective filing date, to include the trench and related arrangement of Shibita in Ode and arrive at the claimed invention so as to prevent moisture penetration (Shibita, [0031]). Regarding claim 2, Ode/Shibita discloses the semiconductor package of claim 1, wherein the second molding layer (27) covers at least a side surface of the first molding layer (24, Fig. 12). Regarding claim 5, Ode/Shibita discloses the semiconductor package of claim 1, wherein the first molding layer (24) and the second molding layer (27) are in direct contact with each other (Fig. 12). Claim 8 is rejected under 35 U.S.C. 103 as being unpatentable over Ode et al. (of record, US 20110244628 A1) in view of Shibita et al. (of record, US 20110074048 A1) as applied to claim 1 above, and further in view of Kang et al. (of record, US 20140084456 A1). Regarding claim 8, Ode/Shibita fails to disclose the semiconductor package of claim 1, wherein each of outer surfaces of the second molding layer is not aligned with a side surface of the interposer in a vertical direction and is located inside the interposer in a horizontal direction. Kang discloses (Fig. 20) wherein each of outer surfaces of the second molding layer (substrate mold layer 600; para. [0273]) is not aligned with a side surface of the interposer (printed circuit board 500; para. [0263]) in a vertical direction and is located inside the interposer (500) in a horizontal direction. It would have been obvious to one of ordinary skill in the art, before the effective filling date, to incorporate the teachings of Kang into the device of Ode/Shibita to include each of outer surfaces of the second molding layer is not aligned with a side surface of the interposer in a vertical direction and is located inside the interposer in a horizontal direction for the purpose of allowing for multiple devices to be formed simultaneously and subsequently trimmed/sawed without risking damage to the molding layers or other components as would be understood by one skilled in the art and/or so as to minimize the amount of molding material needed to protect encapsulated devices. Claim 9 is rejected under 35 U.S.C. 103 as being unpatentable over Ode et al. (of record, US 20110244628 A1) in view of Shibita et al. (of record, US 20110074048 A1) as applied to claim 1 above, and further in view of Kim et al. (of record, US 20180006006 A1). Regarding claim 9, Ode/Shibita fails to disclose the semiconductor package of claim 1, wherein the first semiconductor chip is a buffer chip configured to control the one or more second semiconductor chips, and wherein the one or more second semiconductor chips are memory cell chips. Kim discloses (Fig. 20) wherein the first semiconductor chip (C1) is a buffer chip configured to control the one of more second semiconductor chips (C2-C5), and wherein the one or more second semiconductor chips (C2-C5) are memory cell chips ( [0038] explains first chip can be a logic chip and second chip can be a memory chip, see also [0049]). It would have been obvious to one of ordinary skill in the art, before the effective filling date, to incorporate the teachings of Kim into the device of Odei/Shibita so as to provide for a packaged device with high degree of functionality with a reduced size (Kim, [0003]). Claim 10 is rejected under 35 U.S.C. 103 as being unpatentable over Ode et al. (of record, US 20110244628 A1) in view of Shibita et al. (of record, US 20110074048 A1) as applied to claim 1 above, and further in view of Kang et al. (of record, US 20140084456 A1) and Chang et al (of record, US 20190273075 A1). Regarding claim 10, Ode/Shibita fails to disclose the semiconductor package of claim 1, wherein the first molding layer and the second molding layer are of different materials. Kang discloses (Fig. 20) wherein the first molding layer (160) and the second molding layer (600) are of different materials (different physical property described in [0274]). It would have been obvious to one of ordinary skill in the art before the time of the effective filling date of the invention to incorporate the teachings of Kang into the device Ode/Shibita to include the first molding layer and the second molding layer are of different materials for the purpose of allowing the different molding layers to have different physical properties such as different thermal expansion coefficients, viscosities, or gap-fill properties to allow for better device stability and structural integrity as evidenced by Chang ( [0052]). Response to Arguments Applicant’s arguments with respect to the pending claims have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ANDRES MUNOZ whose telephone number is (571)270-3346. The examiner can normally be reached 8AM-5PM Central Time. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Eva Montalvo can be reached at (571)270-3829. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Andres Munoz/ Primary Examiner, Art Unit 2818
Read full office action

Prosecution Timeline

Show 25 earlier events
May 13, 2026
Examiner Interview Summary
May 13, 2026
Applicant Interview (Telephonic)
Jun 22, 2026
Response Filed
Jul 13, 2026
Final Rejection mailed — §103, §112
Aug 21, 2026
Interview Requested
Sep 08, 2026
Request for Continued Examination
Sep 10, 2026
Response after Non-Final Action
Sep 16, 2026
Non-Final Rejection mailed — §103, §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12727216
TRANSISTOR PROTECTION LAYERS AND METHODS OF FORMING THE SAME
2y 11m to grant Granted Sep 01, 2026
Patent 12720845
SEMICONDUCTOR DEVICE WITH METAL NITRIDE LAYER AND A METHOD OF MANUFACTURING THEREOF
3y 7m to grant Granted Aug 25, 2026
Patent 12720884
RIDGE RECOGNITION SUBSTRATE AND RIDGE RECOGNITION APPARATUS
3y 4m to grant Granted Aug 25, 2026
Patent 12713601
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE
3y 7m to grant Granted Aug 18, 2026
Patent 12707950
Memory Circuitry And Method Used In Forming Memory Circuitry
3y 11m to grant Granted Aug 11, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

7-8
Expected OA Rounds
76%
Grant Probability
94%
With Interview (+17.5%)
2y 2m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 722 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month