Tech Center 2800 • Art Units: 2818 2848 2894 2897 2898
This examiner grants 76% of resolved cases
In Tech Center 2800, Examiner Andres F Munoz has overseen 722 resolved cases. The data for Art Unit 2818 shows an allowance rate of 76.3 percent for these 722 cases. This 76.3 percent rate serves as a baseline for practitioners to understand the outcomes of applications processed by this examiner.
The median days to allowance is 815. This 815 day figure represents the median duration for applications that reach a grant. Practitioners should use this 815 day metric to set expectations for the timeline of prosecution in Art Unit 2818.
The interview lift is 17.5 percent, which indicates an increase in the probability of allowance when an interview is conducted relative to the 76.3 percent base rate. This 17.5 percent lift suggests that interviews are associated with an increased probability of allowance. The 17.5 percent lift is a factor to consider when determining whether to engage in direct communication in Tech Center 2800.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18731878 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18680492 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17872139 | SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18495975 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | Samsung Display Co., LTD. |
| 19033078 | INTEGRATED CIRCUIT PACKAGE HAVING WIREBONDED MULTI-DIE STACK | Non-Final OA | Intel Corporation |
| 18601774 | PACKAGE STACKING USING CHIP TO WAFER BONDING | Final Rejection | Intel Corporation |
| 17847559 | GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION | Final Rejection | Intel Corporation |
| 17711978 | MICROELECTRONIC STRUCTURE INCLUDING DIE BONDING FILM BETWEEN EMBEDDED DIE AND SURFACE OF SUBSTRATE CAVITY, AND METHOD OF MAKING SAME | Final Rejection | Intel Corporation |
| 17815457 | CO-PACKAGE FOR QUBITS AND PARAMETRIC JOSEPHSON DEVICES | Final Rejection | International Business Machines Corporation |
| 18414292 | BARRIER FOR LIQUID METAL THERMAL INTERFACE MATERIAL IN AN ELECTRONIC DEVICE | Non-Final OA | NVIDIA CORPORATION |
| 18346558 | FORMATION OF PHOTODIODE ABSORPTION REGION USING A SACRIFICIAL REGION | Final Rejection | Cisco Technology, Inc. |
| 18317736 | AVALANCHE PHOTODIODE USING A SILICON CAP LAYER | Non-Final OA | Cisco Technology, Inc. |
| 18673204 | SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18322882 | SEMICONDUCTOR DEVICE INCLUDING POLYSILICON STRUCTURES AND METHOD OF MAKING | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18303822 | ISOLATION OF ADJACENT STRUCTURES | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18783347 | INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18581604 | Methods, Structures and Devices for Intra-Connection Structures | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18766911 | SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRO-MECHANICS CO., LTD. |
| 18439938 | ANTENNA-INTEGRATED HIGH-FREQUENCY SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING SAME | Non-Final OA | KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
| 18747495 | Semiconductor structure including hybrid bond contact and manufacturing method thereof | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18531679 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18441484 | DIRECT-COOLING FOR SEMICONDUCTOR DEVICE MODULES | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18487781 | LIGHT EMITTING DIODE PACKAGE | Non-Final OA | SEOUL VIOSYS CO., LTD. |
| 17877505 | LIGHT EMITTING MODULE AND DISPLAY APPARATUS BY USING THE SAME | Non-Final OA | Seoul Viosys Co., Ltd. |
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