Prosecution Insights
Last updated: April 19, 2026
Application No. 17/872,568

DICING DIE ATTACH FILM AND METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR PACKAGE AND METHOD OF PRODUCING THE SAME

Non-Final OA §103
Filed
Jul 25, 2022
Examiner
ISAAC, STANETTA D
Art Unit
2898
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Furukawa Electric Co. Ltd.
OA Round
5 (Non-Final)
86%
Grant Probability
Favorable
5-6
OA Rounds
2y 7m
To Grant
48%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allow Rate
811 granted / 948 resolved
+17.5% vs TC avg
Minimal -38% lift
Without
With
+-37.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 7m
Avg Prosecution
57 currently pending
Career history
1005
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
49.5%
+9.5% vs TC avg
§102
44.6%
+4.6% vs TC avg
§112
5.4%
-34.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 948 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 2/17/26 has been entered. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. Claim(s) 1-7 is/are rejected under 35 U.S.C. 103 as being unpatentable over Amano et al. (US PGPub 2010/0093154, hereinafter referred to as “Amano”, IDS reference) in view of Watanabe et al. (US PGPub 2010/0099240, hereinafter referred to as “Watanabe”). Amano discloses the semiconductor device substantially as claimed. See figures 1-5 and corresponding text, where Amano teaches, in claim 1, a dicing die attach film, comprising: a dicing film (10); and a die attach film (3) laminated on the dicing film, wherein the die attach film has in contact with the dicing film, (figure 1; [0045]) and wherein a value of ratio of Ra1 to an arithmetic average roughness Ra2 at a surface that is of the die attach film and is opposite to the surface in contact with the dicing film is from 1.05 to 28.00. ([0045-0047]) Amano fails to show, in claim 1, an arithmetic average roughness Ra1 of from 0.05 to 2.50 µm at a surface in contact with the dicing film; wherein a value of ratio of Ra1 to an arithmetic average roughness Ra2 at a surface; and wherein the arithmetic average roughness Ra2 is 0.03 µm or more and 2.00 µm or less. Amano teaches, in claim 1, that by adjusting the arithmetic mean roughness of the of the pressure-sensitive layer (2) or the die bond layers (3) the adhesion and peeling of the semiconductor chip from a pickup step is controlled ([0045-0046]). Watanabe teaches, in claim 1, and adhesive film with a surface roughness of 0.15 μm that is determined by a shape measuring system (figures 1a and 1b; [0159-0167]). In addition, Watanabe provides the advantages of using a non-pressure sensitive adhesive film such as an acrylic, has excellent removability [0190]). Therefore, it would have been obvious to one of ordinary skill in the art at the time the invention was filed, to incorporate an arithmetic average roughness Ra1 of from 0.05 to 2.50 µm at a surface in contact with the dicing film; wherein a value of ratio of Ra1 to an arithmetic average roughness Ra2 at a surface; and wherein the arithmetic average roughness Ra2 is 0.03 µm or more and 2.00 µm or less, in the device of Amano, according to the teachings of both Amano and Watanabe, with the motivation of controlling the adhesion and peeling of the semiconductor chip from a pickup step that has excellent removability. Regarding a variable which achieves a recognized result, before the determination of the optimum or workable ranges of said variable might be characterized as routine experimentation, because "obvious to try" is not a valid rationale for an obviousness finding. In KSR International Co. v. Teleflex Inc., 550 U.S. 398 (2007), Amano in view of Watanabe shows, in claim 2, wherein the die attach film comprises: an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C), and an inorganic filler (D), and wherein the die attach film is thermally cured to give a cured body having a thermal conductivity of 1.0 W/m.Math.K or more.([0074], [0084-0096]) Amano in view of Watanabe shows, in claim 3, wherein when the die attach film is heated at a temperature elevation rate of 5° C./min from 25° C., a melt viscosity at 120° C. is in a range of 500 to 10,000 Pa.Math.s. ([0101) Amano in view of Watanabe shows, in claim 4, wherein the dicing film is energy ray-curable. ([0073]) Amano in view of Watanabe shows, in claim 5, comprising leveling a surface of the die attach film by using a pressure roll to create a surface state satisfying Ra1 and Ra2. ([0105]) Amano in view of Watanabe shows, in claim 6, a semiconductor package, comprising: a semiconductor chip and a circuit board which are bonded to each other with a thermally cured product of a bonding agent; ([0109-0110]) and/or semiconductor chips which are bonded to each other with a thermally cured product of a bonding agent, wherein the bonding agent is derived from the die attach film of the dicing die attach film. Amano in view of Watanabe shows, in claim 7, a method of producing a semiconductor package, comprising the steps of: ([0103-0114]) a first step of thermocompression bonding the dicing die attach film to a back surface of a semiconductor wafer where at least one semiconductor circuit is formed on a surface so that the die attach film is in contact with the back surface of the semiconductor wafer; a second step of integrally dicing the semiconductor wafer and the die attach film to obtain a semiconductor chip with a bonding agent layer on the dicing film, the semiconductor chip with a bonding agent layer including a piece of the die attach film and a semiconductor chip; a third step of removing the semiconductor chip with a bonding agent layer from the dicing film and thermocompression bonding the semiconductor chip with a bonding agent layer and a circuit board via the bonding agent layer; and a fourth step of thermally curing the bonding agent layer. Response to Arguments Applicant's arguments filed 2/17/26 have been fully considered but they are not persuasive. In the Remarks applicant raises the clear issue as to whether Amano alone or in combination with Watanabe suggests wherein the arithmetic average roughness Ra2 is 0.03 µm or more and 2.00 µm or less. The Examiner views that Amano in view of Watanabe does suggest the above claimed limitation and/or suggestions. Specifically, Amano and Watanabe suggest that by adjusting the arithmetic mean roughness of the of the pressure-sensitive layer or the die bond layers adhesion and removability can be achieved. Therefore, the he arithmetic mean roughness between the die attach film and the dicing film are obvious variants to the functionality of the adhesion and removal process of the semiconductor chip during a pickup process, thus would result in routine experimentation. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to STANETTA D ISAAC whose telephone number is (571)272-1671. The examiner can normally be reached M-F 10-6. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Leonard Chang can be reached at 571-270-3691. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /STANETTA D ISAAC/Examiner, Art Unit 2898 March 7, 2026
Read full office action

Prosecution Timeline

Jul 25, 2022
Application Filed
Mar 23, 2024
Non-Final Rejection — §103
Jun 25, 2024
Response Filed
Nov 30, 2024
Non-Final Rejection — §103
Mar 05, 2025
Response Filed
Mar 22, 2025
Non-Final Rejection — §103
Jun 27, 2025
Response Filed
Oct 15, 2025
Final Rejection — §103
Jan 16, 2026
Response after Non-Final Action
Feb 17, 2026
Request for Continued Examination
Feb 21, 2026
Interview Requested
Feb 26, 2026
Response after Non-Final Action
Mar 07, 2026
Non-Final Rejection — §103
Mar 16, 2026
Interview Requested
Mar 31, 2026
Examiner Interview Summary
Mar 31, 2026
Applicant Interview (Telephonic)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

5-6
Expected OA Rounds
86%
Grant Probability
48%
With Interview (-37.9%)
2y 7m
Median Time to Grant
High
PTA Risk
Based on 948 resolved cases by this examiner. Grant probability derived from career allow rate.

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