Prosecution Insights
Last updated: October 02, 2026
Application No. 17/894,063

SEMICONDUCTOR PACKAGING WITH REDUCED STANDOFF HEIGHT

Non-Final OA §102§103
Filed
Aug 23, 2022
Examiner
FAN, SU JYA
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Micron Technology Inc.
OA Round
3 (Non-Final)
76%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
87%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allowance Rate
723 granted / 953 resolved
+7.9% vs TC avg
Moderate +11% lift
Without
With
+11.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 7m
Avg Prosecution
44 currently pending
Career history
1008
Total Applications
across all art units

Statute-Specific Performance

§101
4.3%
-35.7% vs TC avg
§103
50.9%
+10.9% vs TC avg
§102
22.7%
-17.3% vs TC avg
§112
19.6%
-20.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 953 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Response to Amendment The following office action is in response to the amendment and remarks filed on 4/16/26. Applicant’s amendment to claims 1, 9 and 11 is acknowledged. Claims 1-20 are pending and claims 4 and 17-20 are withdrawn. Claims 1-3 and 5-16 are subject to examination at this time. Response to Arguments Applicant's arguments with respect to claim 1 have been considered but are moot in view of the new ground(s) of rejection. Regarding claim 1: The following clarifying remarks are provided in response to Applicant’s arguments regarding the Ewert reference. Applicant's arguments have been fully considered but they are not persuasive. An object having “sidewalls extending continuously in a vertical direction” does not equate to perpendicular sidewalls. For example, a screw has sidewalls that extend continuously in a vertical direction but the spirals result in sidewalls that are concave/convex rather than perpendicular. Allowable Subject Matter Claim 5 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1-3, 8-13 and 15 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by We et al., US Publication No. 2023/0163112 A1. We anticipates: 1. A semiconductor device assembly comprising (see figs. 4-5 annotated below, also see fig. 1 and element labels in fig. 12): a semiconductor die (e.g. 104 in fig. 1); a substrate (400, 500) coupled to the semiconductor die, the substrate including: a primary conductive layer (412(1), 542) including a first surface of the substrate; a first solder mask layer (416(1), 516(2)) coupled to the first surface; a secondary conductive layer (432(2), 512(2)) including a second surface of the substrate; a second solder mask layer (416(2), 516(1)) coupled to the second surface; and an inner conductive layer (432(1), 512(1)) positioned between the primary conductive layer and the secondary conductive layer, wherein the inner conductive layer includes a bond pad (432(1), 512(1)) positioned at an end of an opening (1206, e.g. see fig. 12B) that extends from the second solder mask layer (416(2), 516(1)) through the secondary conductive layer (432(2), 512(2)) to the bond pad (432(1), 512(1)) of the inner conductive layer, wherein the opening (1206) includes sidewalls extending from the bond pad to an outer surface of the second solder mask layer (416(2), 516(1)), and wherein the sidewalls of the opening (416(2), 516(1)) are insulated ( 410/430, 510/540) from a conductive material in the secondary conductive layer (432(2), 512(2)); and a solder ball (e.g. 136 in fig. 1) attached to the bond pad. See We at para. [0001] – [0079], figs. 1-15. PNG media_image1.png 390 706 media_image1.png Greyscale PNG media_image2.png 406 656 media_image2.png Greyscale 2. The semiconductor device assembly of claim 1, wherein the substrate further includes: a first insulating layer (410, 540) between the primary conductive layer and the inner conductive layer; and a second insulating layer (430, 510) between the secondary conductive layer and the inner conductive layer, figs. 4-5. 3. The semiconductor device assembly of claim 1, wherein the semiconductor die (104) is coupled to the substrate by the solder ball (136), fig. 1. 8. The semiconductor device assembly of claim 1, wherein the opening (1206) is one of an array of a plurality of openings, and wherein the solder ball (136) is one of a plurality of solder balls that comprise a ball grid array (BGA), para. [0029], fig. 1. Regarding claim 9: We teaches the limitations as applied to claim 1 above. We further teaches the added limitation: wherein the opening (1206) includes sidewalls extending continuously in a vertical direction between the bond pad (432(1), 512(1)) and an outer surface of the second solder mask layer (416(2), 516(1)), figs. 4-5. 10. The semiconductor package substrate of claim 9, wherein the primary layer (412(1), 542), the secondary layer (432(2), 512(2)), and the inner layer (432(1), 512(1)) each include respective conductive structures, and wherein the conductive structures are vertically separated from each other by an insulator (410/430, 510/540). 11. The semiconductor package substrate of claim 9, wherein the bond pad is a first bond pad (432(1), 512(1)), the semiconductor package substrate further comprising: a second bond pad (e.g. an adjacent 432(1), 512(1) among the plurality) positioned on the secondary layer. 12. The semiconductor package substrate of claim 9, wherein the inner layer (432(1), 512(1)) is a first inner layer, the semiconductor package substrate further comprising: a second inner (e.g. an adjacent 432(1), 512(1) among the plurality) layer positioned between the primary layer (412(1), 542) and the first inner layer, figs. 4-5. 13. The semiconductor package substrate of claim 12, wherein the second inner layer (e.g. an adjacent 432(1), 512(1) among the plurality) includes a second bond pad that is configured to receive a second external connection (e.g. 136 in fig. 1) through a second opening (e.g. adjacent 1206) that extends from the second solder mask layer (416(2), 516(1)) through the secondary layer (432(2), 512(2)) and the first inner layer (412(1), 542) to the second bond pad, figs. 4-5. 15. The semiconductor package substrate of claim 9, wherein the secondary layer (432(2), 512(2)) includes a conductive portion that is exposed in one of the sidewalls of the opening (1205), figs. 4-5 and 12. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 6, 7 and 14 is/are rejected under 35 U.S.C. 103 as being unpatentable over We, as applied to claims 1 and 9 above, in view of Elsherbini et al., US Publication No. 2019/0044047 A1. Regarding claim 6: We teaches all the limitations of claim 1 above, and further teaches: wherein the sidewalls of the opening comprise an insulating/dielectric material at para. [0032] – [0033]. We does not expressly teach prepreg material. In an analogous art, Elsherbini teaches a package substrate can made “using reinforced dielectric materials as the insulating material 322 (e.g., dielectric materials with silicon dioxide fillers), or utilizing stiffer materials as the insulating material 322 (e.g., a prepreg material including glass cloth fibers).” See Elsherbini at para. [0070], fig. 3. Regarding claim 7: In We’s figs. 4-5, the secondary conductive layer (432(2), 512(2)) includes the insulating/dielectric material (410/430, 510/540) between the conductive material (432(2), 512(2)) and the opening (1206). We does not expressly teach prepreg material. Elsherbini teaches prepreg material as applied to claim 6 above. Regarding claim 14: Elsherbini teaches the limitations as applied to claim 6 above. It would have been obvious to a person of ordinary skill in the art before the effective filling date of the claimed invention to modify the teachings of We with the teachings of Elsherbini because “…thermal expansion and contraction in the package substrate 314 may be managed by maintaining an approximately uniform density of the conductive material… using reinforced dielectric materials as the insulating material 322 (e.g., dielectric materials with silicon dioxide fillers), or utilizing stiffer materials as the insulating material 322 (e.g., a prepreg material including glass cloth fibers).” See Elsherbini at para. [0070]. Claim(s) 16 is/are rejected under 35 U.S.C. 103 as being unpatentable over We, as applied to claim 9 above. Regarding claim 16: We teaches all the limitations of claim 16 above, but is silent wherein the opening has a width of approximately 300 µm. It would have been obvious to one having ordinary skill in the art to form the opening to have a width of approximately 300 µm, since discovering an optimum value of a result effective variable involves only routine skill in the art. See MPEP § 2144.05, Obviousness of Ranges and Optimization of Ranges. “Generally, differences in concentration or temperature will not support the patentability of subject matter encompassed by the prior art unless there is evidence indicating such concentration or temperature is critical.” (Emphasis added.) In re Hoeschele, 406 F.2d 1403, 160 USPQ 809 (CCPA 1969)…Claimed elastomeric polyurethanes which fell within the broad scope of the references were held to be unpatentable thereover because, among other reasons, there was no evidence of the criticality of the claimed ranges of molecular weight or molar proportions. (Emphasis added.) Smith v. Nichols, 88 U.S. 112, 118-19 (1874) (a change in form, proportions, or degree "will not sustain a patent"). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Michele Fan whose telephone number is 571-270-7401. The examiner can normally be reached on M-F from 7:30 am to 4 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Jeff Natalini, can be reached on (571) 272-2266. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Michele Fan/ Primary Examiner, Art Unit 2818 28 August 2026
Read full office action

Prosecution Timeline

Aug 23, 2022
Application Filed
Aug 14, 2025
Non-Final Rejection mailed — §102, §103
Nov 14, 2025
Response Filed
Jan 16, 2026
Final Rejection mailed — §102, §103
Apr 16, 2026
Request for Continued Examination
Apr 24, 2026
Response after Non-Final Action
Sep 01, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12751165
DISPLAY APPARATUS
2y 9m to grant Granted Sep 29, 2026
Patent 12733296
LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS
2y 8m to grant Granted Sep 08, 2026
Patent 12727310
DISPLAY DEVICE
4y 8m to grant Granted Sep 01, 2026
Patent 12721137
SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
2y 10m to grant Granted Aug 25, 2026
Patent 12713990
SEMICONDUCTOR PACKAGE
4y 4m to grant Granted Aug 18, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
76%
Grant Probability
87%
With Interview (+11.1%)
2y 7m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 953 resolved cases by this examiner. Grant probability derived from career allowance rate.

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