Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2818 2823 2894
This examiner grants 76% of resolved cases
Su Jya Fan operates within Tech Center 2800 and Art Unit 2818, where she has managed 953 resolved cases. Her allowance rate of 75.9% indicates a high probability of success for applications under her review. The median days to allowance is 957, providing a standard timeline for reaching a final grant.
The data highlights an interview lift of 11.1%, suggesting that direct engagement can further improve the 75.9% allowance rate. For practitioners in Art Unit 2818, this 11.1% lift is a meaningful factor in strategy development. The 953 resolved cases provide a robust dataset for evaluating these performance trends.
In Tech Center 2800, the 957-day median pendency is a key metric for applicants to consider. The combination of a high allowance rate and a positive interview lift suggests a favorable prosecution environment. Practitioners should utilize the 11.1% lift to ensure their cases stay on track toward the 957-day median.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18426868 | SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18410761 | HEAT RADIATION DEVICES | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18400953 | SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18096174 | THIN SYSTEM-IN-PACKAGE WITH SHIELDED STEPPED MOLD | Final Rejection | Apple Inc. |
| 18750292 | LIGHT EMITTING DIODE AND DISPLAY DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18364893 | SEMICONDUCTOR DEVICE | Final Rejection | Toshiba Electronic Devices & Storage Corporation |
| 17666911 | POWER STRUCTURE, PREPARATION METHOD, AND DEVICE | Non-Final OA | HUAWEI TECHNOLOGIES CO., LTD. |
| 17587790 | PACKAGING DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE | Final Rejection | Huawei Technologies Co., Ltd. |
| 18069290 | ELECTRONIC DEVICE | Final Rejection | InnoLux Corporation |
| 17943915 | COPPER CLAD LAMINATE (CCL) FOR PLATING PADS WITHIN A GLASS CAVITY FOR GLASS CORE APPLICATIONS | Final Rejection | Intel Corporation |
| 17889229 | SKIP LAYER WITH AIR GAP ON GLASS SUBSTRATES | Non-Final OA | Intel Corporation |
| 17448716 | Semiconductor Die, Semiconductor Device and Method for Forming a Semiconductor Die | Final Rejection | Intel Corporation |
| 18293460 | SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 18623049 | SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE BONDING PATTERN | Non-Final OA | SK hynix Inc. |
| 17894063 | SEMICONDUCTOR PACKAGING WITH REDUCED STANDOFF HEIGHT | Non-Final OA | Micron Technology, Inc. |
| 17891535 | SOLDER JOINT DESIGN FOR IMPROVED PACKAGE RELIABILITY | Final Rejection | Micron Technology, Inc. |
| 18591344 | HEMT DEVICE HAVING A REDUCED GATE LEAKAGE AND MANUFACTURING PROCESS THEREOF | Non-Final OA | STMicroelectronics International N.V. |
| 18226409 | INTEGRATED CIRCUIT PACKAGE | Non-Final OA | STMicroelectronics (Grenoble 2) SAS |
| 18790831 | Fin-Based Field Effect Transistors | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18432058 | SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD OF THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18784233 | HIGH EFFICIENCY HEAT DISSIPATION USING DISCRETE THERMAL INTERFACE MATERIAL FILMS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18777250 | METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18349412 | SEMICONDUCTOR PACKAGE SUBSTRATE WITH STRESS BUFFER PADS AND METHODS FOR MAKING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company Limited |
| 18522793 | PHOTOELECTRIC CONVERSION ELEMENT AND GAS SENSOR | Final Rejection | Asahi Kasei Microdevices Corporation |
| 18581708 | PRINTED CIRCUIT BOARD | Non-Final OA | SAMSUNG ELECTRO-MECHANICS CO., LTD. |
| 18642522 | DUAL PLASMA TREATMENT PROCESS | Non-Final OA | Applied Materials, Inc. |
| 18238954 | SACRIFICIAL LAYER FOR FORMING MERGED HIGH ASPECT RATIO CONTACTS IN 3D NAND MEMORY DEVICE | Final Rejection | Applied Materials, Inc. |
| 18414969 | SEMICONDUCTOR DEVICE | Final Rejection | ROHM CO., LTD. |
| 17957444 | CONNECTING A CHIPLET TO AN INTERPOSER DIE AND TO A PACKAGE INTERFACE USING A SPACER INTERCONNECT COUPLED TO A PORTION OF THE CHIPLET | Final Rejection | ADVANCED MICRO DEVICES, INC. |
| 18216094 | SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
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