Prosecution Insights
Last updated: August 17, 2026
Application No. 17/895,102

ELECTRONIC ASSEMBLY HAVING A COOLING FEATURE AND METHODS OF FORMING THEREOF

Final Rejection §103
Filed
Aug 25, 2022
Examiner
VALENZUELA, PATRICIA D
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Intel Corporation
OA Round
2 (Final)
90%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
92%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allowance Rate
647 granted / 717 resolved
+22.2% vs TC avg
Minimal +2% lift
Without
With
+2.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
77 currently pending
Career history
797
Total Applications
across all art units

Statute-Specific Performance

§101
1.5%
-38.5% vs TC avg
§103
66.4%
+26.4% vs TC avg
§102
16.9%
-23.1% vs TC avg
§112
6.7%
-33.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 717 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1-15, 21-23 is/are rejected under 35 U.S.C. 103 as being unpatentable over Eid(USPGPUB DOCUMENT: 2020/0194335, hereinafter Eid) in view of Kim (USPGPUB DOCUMENT: 2017/0207205, hereinafter Kim) and Choi (USPGPUB DOCUMENT: 2022/0399287, hereinafter Choi). Re claim 1 Eid discloses an electronic assembly, comprising: a substrate(901); a first die(905/906) with first and second opposing surfaces, wherein the first die(905/906 of Eid) is coupled to the substrate(901) at the first surface(bottom); a stiffener(902/902c/902d/925)[0041 of Eid] attached to the substrate(901), the stiffener(902/902c/902d/925)[0041] having a cavity that accommodates the first die(905/906), wherein the second surface(top) of the first die(905/906) faces the stiffener(902/902c/902d/925)[0041]; and a thermally conductive layer(930/910 of Eid) positioned in the cavity between the stiffener(902/902c/902d/925)[0041] and the first die(905/906). Eid does not disclose at least one first trench extending partially through the first die(905/906) from the second surface(top); and a thermally conductive layer(930/910) positioned in the cavity between the stiffener(902/902c/902d/925)[0041] and the first die(905/906) and at least partially filling the at least one first trench; wherein the first die has a first footprint , the at least one first trench comprising a first inner ring trench having a first inner trench footprint and a first outer ring trench having a first outer trench footprint, the first outer trench footprint being greater than the first inner trench footprint; the cavity having a second footprint greater than the first footprint, the conductive layer extending across the second footprint between the stiffener and the second surface of the first die . Kim disclose in Fig 5B at least one first trench(380) extending partially through the first die(300) from the second surface(top); and a thermally conductive layer(ML/MLP) at least partially filling the at least one first trench(380). It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Kim to the teachings of Eid in order to enhance the operational reliability of the first semiconductor chip [0071, Kim]. In doing so, a thermally conductive layer(ML/MLP of Kim) positioned in the cavity between the stiffener(902/902c/902d/925 of Eid) and the first die(300 of Kim) and at least partially filling the at least one first trench(380 of Kim). Eid does not disclose wherein the first die has a first footprint , the at least one first trench comprising a first inner ring trench having a first inner trench footprint and a first outer ring trench having a first outer trench footprint, the first outer trench footprint being greater than the first inner trench footprint; the cavity having a second footprint greater than the first footprint, the conductive layer extending across the second footprint between the stiffener and the second surface of the first die . Choi disclose in Fig 6 wherein the first die has a first footprint (footprint of 400 of Choi), the at least one first trench(trench of 400/300) comprising a first inner ring trench(footprint of trench of 400/300) having a first inner trench footprint and a first outer ring trench(trench of 500BR/300) having a first outer trench footprint(footprint of trench of 500BR/300), the first outer trench footprint being greater than the first inner trench footprint; the cavity(cavity of 50/500FL/500BRa) having a second footprint (footprint of cavity of 50/500FL/500BRa of Choi) greater than the first footprint(footprint of 400 of Choi), It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Choi to the teachings of Eid in order to prevents bending from occurring in the semiconductor package [0005, Choi]. In doing so, the conductive layer(930/910 of Eid) extending across the second footprint(footprint of cavity of 50/500FL of Choi) between the stiffener(902/902c/902d/925)[0041 of Eid] and the second surface of the first die(905/906 of Eid) . Re claim 2 Eid and Kim and Choi disclose the electronic assembly of claim 1, wherein the first die(905/906) has a first footprint and the cavity of the stiffener(902/902c/902d/925)[0041] has a second footprint, and wherein the conductive layer extends across the second footprint between the stiffener(902/902c/902d/925)[0041] and the second surface(top) of the first die(905/906). Re claim 3 Eid and Kim and Choi disclose the electronic assembly of claim 1, wherein the conductive layer is a liquid metal[0042]. Re claim 4 Eid and Kim and Choi disclose the electronic assembly of claim 3, wherein the liquid metal[0042] comprises metal alloy composites of at least one of tin, indium, gallium, francium, cesium, and rubidium[0042]. Re claim 5 Eid and Kim and Choi disclose the electronic assembly of claim 1, further comprising a dielectric layer(610)[0092 of Kim] positioned in the cavity over the conductive layer and around the first die(905/906), wherein the dielectric layer(610)[0092 of Kim] holds the conductive layer intact to the stiffener(902/902c/902d/925)[0041]. Re claim 6 Eid and Kim and Choi disclose the electronic assembly of claim 5, wherein the dielectric layer(610)[0092 of Kim] comprises an epoxy polymer layer, a polyimide layer, a mold compound layer, or a silicone layer. Re claim 7 Eid and Kim and Choi disclose the electronic assembly of claim 1, wherein the stiffener(902/902c/902d/925)[0041] is formed of a conductive material. Re claim 8 Eid and Kim and Choi disclose the electronic assembly of claim 1, wherein the stiffener(902/902c/902d/925)[0041] and the conductive layer is coupled to a reference voltage. Re claim 9 Eid and Kim and Choi disclose the electronic assembly of claim 1, wherein the at least one first trench(380 of Kim) comprises a plurality of columns(see Fig 5B of Kim). Re claim 10 Eid and Kim and Choi disclose the electronic assembly of claim 1, wherein the at least one first trench(380 of Kim) comprises a first inner ring trench with a first inner trench footprint and a first outer ring trench with a first outer trench footprint, the first outer trench footprint being greater than the first inner trench footprint. Re claim 11 Eid and Kim and Choi disclose the electronic assembly of claim 1, further comprising:a second die(905/906) adjacent to the first die(905/906), the second die(905/906) includes first and second opposing surfaces; and at least one second trench(380 of Kim) extending partially through the second die(905/906) from the second surface(top) of the second die(905/906). Re claim 12 Eid and Kim and Choi disclose the electronic assembly of claim 11, wherein the first and second die(905/906)s are encapsulated within a mold layer(400)[0052 of Kim] with a first footprint, the cavity of the stiffener(902/902c/902d/925)[0041] has a second footprint, and wherein the conductive layer extends across the second footprint between the stiffener(902/902c/902d/925)[0041] and the second surface(top) of the first die(905/906) and the second surface(top) of the second die(905/906), and wherein the conductive layer further at least partially fills the at least one second trench(380 of Kim). Re claim 13 Eid and Kim and Choi disclose the electronic assembly of claim 12, further comprising a dielectric layer(610)[0092 of Kim] positioned in the cavity over the conductive layer and around the mold layer(400)[0052 of Kim], wherein the dielectric layer(610)[0092 of Kim] holds the conductive layer intact to the stiffener(902/902c/902d/925)[0041]. Re claim 14 Eid and Kim and Choi disclose the electronic assembly of claim 11, wherein the first die(905/906) comprises a central processing unit (CPU)[0070 of Kim]. Re claim 15 Eid and Kim and Choi disclose the electronic assembly of claim 14, wherein the second die(905/906) comprises a graphic processing unit (GPU), a neural processing unit (NPU), a deep learning processor (DLP), a system-on-chip (SOC), a memory device, a field programmable gate array (FGPA) or an 1/0 tile[0159]. Re claim 21 Eid and Kim and Choi disclose the electronic assembly of claim 1, wherein the first die further comprises an active layer between the first and second surfaces and a redistribution layer[0048 of Choi] adjacent to the active layer on a side of the active layer facing the second surface, and wherein the at least one first trench extends through at least a portion of the redistribution layer. Re claim 22 Eid and Kim and Choi disclose the method of claim 16, further comprising: providing a second die adjacent to the first die(905/906 of Eid), the second die including first and second opposing surfaces; and forming at least one second trench extending partially through the second die from the second surface of the second die. Re claim 23 Eid and Kim and Choi disclose the method of claim 22, wherein the first and second dies are encapsulated within a mold layer with a first footprint, the cavity of the stiffener has a second footprint, and wherein the conductive layer extends across the second footprint (see Fig 6 of Choi) between the stiffener and the second surface of the first die(905/906 of Eid) and the second surface of the second die, and wherein the conductive layer further at least partially fills the at least one second trench Response to Arguments Applicant’s arguments with respect to claim 1-15, 21-23 have been considered but are moot because the arguments do not apply to any of the references being used in the current rejection. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to PATRICIA D VALENZUELA whose telephone number is (571)272-9242. The examiner can normally be reached Monday-Friday 10am-6pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Partridge can be reached at 571-270-1402. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /PATRICIA D VALENZUELA/Primary Examiner, Art Unit 2812
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Prosecution Timeline

Aug 25, 2022
Application Filed
Mar 23, 2023
Response after Non-Final Action
Feb 18, 2026
Non-Final Rejection mailed — §103
Apr 14, 2026
Interview Requested
Apr 29, 2026
Applicant Interview (Telephonic)
May 13, 2026
Response Filed
Jun 13, 2026
Examiner Interview Summary
Jul 30, 2026
Final Rejection mailed — §103 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
90%
Grant Probability
92%
With Interview (+2.1%)
2y 2m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 717 resolved cases by this examiner. Grant probability derived from career allowance rate.

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