Prosecution Insights
Last updated: April 19, 2026
Application No. 17/899,891

SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

Non-Final OA §103
Filed
Aug 31, 2022
Examiner
ONUTA, TIBERIU DAN
Art Unit
2814
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Korea Electronics Technology Institute
OA Round
3 (Non-Final)
73%
Grant Probability
Favorable
3-4
OA Rounds
3y 2m
To Grant
96%
With Interview

Examiner Intelligence

Grants 73% — above average
73%
Career Allow Rate
44 granted / 60 resolved
+5.3% vs TC avg
Strong +23% interview lift
Without
With
+22.9%
Interview Lift
resolved cases with interview
Typical timeline
3y 2m
Avg Prosecution
51 currently pending
Career history
111
Total Applications
across all art units

Statute-Specific Performance

§103
65.6%
+25.6% vs TC avg
§102
22.2%
-17.8% vs TC avg
§112
11.0%
-29.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 60 resolved cases

Office Action

§103
DETAILED ACTION This Office action responds to Applicant’s RCE amendments filed on 11/21/2025. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for a rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Continued Examination Under 37 CFR 1.114 A request for continued examination (RCE) under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection mailed on 08/21/2025. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 11/21/2025 has been entered. Amendment Status The amendment filed as an RCE submission on 11/16/2025, responding to the Office action mailed on 08/21/2024 has been entered. The present Office action is made with all previously suggested amendments being fully considered. Accordingly, pending in this Office action are claims 1-3. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claims 1-3 are rejected under 35 U.S.C. 103 as being unpatentable over Kim (US 2022/0051972) in view of Sridharan (US 2022/0406673). Regarding claim 1, Kim shows (see, e.g., Kim: figs. 2-5) most aspects of the instant invention including a semiconductor package, comprising: A semiconductor chip 40 (see, e.g., Kim: par. [0173]) A package structure 20 configured to accommodate the semiconductor chip 40 therein wherein the package structure 20 comprises: A substrate 22 having one surface 213 and the other surface opposite 214 to the one surface 213 At least one conductive via 223/241 extending through the one surface 213 and the other surface 214 of the substrate 22 A wiring layer 26 formed at the one surface 213, to transmit an electrical signal (see, e.g., Kim: par. [0208]) A chip accommodation portion 281 as a space formed through removal of a portion of a substrate 22 from the other surface 214 in a direction toward the one surface 213 A contact pad 232/282 connected to the wiring layer 26 and formed to be exposed through the chip accommodation portion 281 The semiconductor chip 40 inserted into the chip accommodation portion 281 and connected to the contact pad 232/282 wherein: The semiconductor chip 40 is inserted after forming the wiring layer 26 (see, e.g., Kim: figs. 3b, and 4a) The writing layer 26 extends along the one surface 213 (see, e.g., Kim: fig. 5) and includes a connection portion 24/232/282 The connection portion 24/232/282 formed on the one surface 213 of the substrate 22 Kim, however, fails to show that the connection portion 24/232/282 directly connects the contact pad 24/232 with one of the least one conductive via 223/241 on the one surface of the substrate 22. Sridharan, in a similar device to Kim, shows (see, e.g., Sridharan: fig. 4) that the connection portion 312/320/316 (formed on the one surface of the substrate 340) directly connects the contact pad 352 (formed on the one surface of the substrate 340) with one of the least one conductive via 345 on one surface of the substrate. Sridharan further shows that such connection is through the redistribution layer trace 354 that provides electrical interconnections between the die pads 312 and package terminals 345 (see, e.g., Sridharan: par. [0040]). Sridharan also shows that such direct connections are short paths that significantly improves electrical properties such a signal transmission rate, and substantially prevents generating of parasitic element (see, e.g., Sridharan: abstract). It would have been obvious at the time of filing the invention to one of ordinary skill in the art to include the direct connection between the contact pad and the conductive via of Sridharan in the semiconductor package of Kim to provide short paths that significantly improves electrical properties such a signal transmission rate, and substantially prevents generating of parasitic element. Regarding claim 2, Kim in view of Sridharan shows (see, e.g., Kim: figs. 2-5) that: The substrate 22 comprises a residual portion remaining after a portion of the substrate is removed to a predetermined depth (211-212) from a side of the substrate corresponding to the other surface 214 thereof in a direction toward the one surface 213 thereof (see, e.g., Kim: par. [0079]) The contact pad 232/282 is caused to be exposed within the chip accommodation portion 281 by removing the portion of the substrate to the predetermined depth The contact pad 232/282 has a length extending from one surface toward the chip accommodation portion that is greater than a thickness of the residual portion after the substrate is removed to form the chip accommodation portion such that the contact pad 232/282 extends through the residual portion Regarding claim 3, Kim in view of Sridharan shows (see, e.g., Kim: figs. 2-5) that: A first bump 283 formed at the contact pad 232/282 A portion of the first bump 283 protruding into the interior of the chip accommodation portion 281 at the residual portion Response to Arguments Applicants’ arguments have been considered but are moot in view of the previous grounds of rejection. Examiner has read and considered Applicants’ arguments. The applicants argue: Kim fails to disclose or otherwise render obvious that “… semiconductor chip is inserted after forming the wiring layer …”, as recited in claim 1. The examiner responds: In view of the previous grounds of rejection, Kim reference, which also includes a method of manufacturing, clearly shows the amended limitation. See, e.g., Kim: figs.3b, and 4a, where Kim shows the that the semiconductor chip 40 is inserted after forming the wiring layer 26. The applicants argue: Kim fails to disclose or otherwise render obvious that “… the connection portion formed on the one surface of the substrate directly connects the contact pad with one of the at least one conductive via on the one surface of the substrate”, as recited in claim 1. The examiner responds: In view of the previous grounds of rejection, Kim in view of Sridharan teaches the amended limitation. Kim in view of Sridharan shows (see, e.g., Sridharan: fig. 4) that Sridharan, in a similar device to Kim, shows (see, e.g., Sridharan: fig. 4) that the connection portion 312/320/316 (formed on the one surface of the substrate 340) directly connects the contact pad 352 (formed on the one surface of the substrate 340) with one of the least one conductive via 345 on one surface of the substrate. Sridharan further shows that such connection is through the redistribution layer trace 354 that provides electrical interconnections between the die pads 312 and package terminals 345 (see, e.g., Sridharan: par. [0040]). Sridharan also shows that such direct connections are short paths that significantly improves electrical properties such a signal transmission rate, and substantially prevents generating of parasitic element (see, e.g., Sridharan: abstract). It would have been obvious at the time of filing the invention to one of ordinary skill in the art to include the direct connection between the contact pad and the conductive via of Sridharan in the semiconductor package of Kim to provide short paths that significantly improves electrical properties such a signal transmission rate, and substantially prevents generating of parasitic element. The applicants argue: Kim in view of Sridharan fails to disclose or otherwise render obvious that “… a through-substrate via (TSV) (see Sridharan, FIGs. 2A-2J), whereas amended claim 1 recites the claimed "conductive via" extends through the one surface and the other surface of the substrate (as recited in Remarks). The examiner responds: In view of the previous grounds of rejection, Kim in view of Sridharan teaches that element 345 is a conductive via (see, e.g., Sridharan: par. [0040]) having the element 370 as a metal core and the element 372 as a solder paste (see, e.g., Sridharan: par. [0045]). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to TIBERIU DAN ONUTA whose telephone number is (571) 270-0074 and between the hours of 9:00 AM to 5:00 PM (Eastern Standard Time) Monday through Friday or by e-mail via Tiberiu.Onuta@uspto.gov. If attempts to reach the examiner by telephone or email are unsuccessful, the examiner's supervisor, Wael Fahmy, can be reached on (571) 272-1705. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (in USA or Canada) or 571-272-1000. /TIBERIU DAN ONUTA/Examiner, Art Unit 2814 /WAEL M FAHMY/Supervisory Patent Examiner, Art Unit 2814
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Prosecution Timeline

Aug 31, 2022
Application Filed
Mar 26, 2025
Non-Final Rejection — §103
Jun 06, 2025
Response Filed
Aug 18, 2025
Final Rejection — §103
Nov 21, 2025
Request for Continued Examination
Nov 29, 2025
Response after Non-Final Action
Feb 10, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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Patent 12581951
SEMICONDUCTOR MODULE HAVING A PLURALITY OF HEAT SINK PLATES
2y 5m to grant Granted Mar 17, 2026
Patent 12563767
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Patent 12557622
A METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE WITH A COMPOSITE BARRIER STRUCTURE
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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
73%
Grant Probability
96%
With Interview (+22.9%)
3y 2m
Median Time to Grant
High
PTA Risk
Based on 60 resolved cases by this examiner. Grant probability derived from career allow rate.

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