Prosecution Insights
Last updated: October 04, 2026
Application No. 17/944,190

APPARATUS FOR PROCESSING SUBSTRATE

Final Rejection §103
Filed
Sep 14, 2022
Priority
Nov 19, 2021 — RE 10-2021-0160758
Examiner
SWEELY, KURT D
Art Unit
1718
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Semes Co., Ltd.
OA Round
4 (Final)
53%
Grant Probability
Moderate
5-6
OA Rounds
0m
Est. Remaining
87%
With Interview

Examiner Intelligence

Grants 53% of resolved cases
53%
Career Allowance Rate
122 granted / 231 resolved
-12.2% vs TC avg
Strong +34% interview lift
Without
With
+33.9%
Interview Lift
resolved cases with interview
Typical timeline
3y 8m
Avg Prosecution
53 currently pending
Career history
285
Total Applications
across all art units

Statute-Specific Performance

§101
0.6%
-39.4% vs TC avg
§103
58.9%
+18.9% vs TC avg
§102
14.7%
-25.3% vs TC avg
§112
24.5%
-15.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 231 resolved cases

Office Action

§103
DETAILED ACTION This action is responsive to Applicant’s reply filed 8/5/2026. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Status Claims 1-6, 8-14, 16, and 18-19 are pending. Claims 5-6 are currently withdrawn. Claims 7, 15, 17 and 20 are cancelled. Claims 1, 10, and 16 are currently amended. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-4, 8-14, 16, and 18-19 (all pending, non-withdrawn claims) are rejected under 35 U.S.C. 103 as being unpatentable over Kim (KR 20180109300 A, using attached English machine translation) in view of Ishii (US Pub. 2003/0173030) and Yoshikawa (US Pub. 2015/0155139). Regarding claim 1, Kim teaches an apparatus for processing a substrate (Kim, Fig. 1, [0027], substrate processing apparatus 10), comprising: a process chamber configured to define an interior space for internally processing a substrate (Kim, Fig. 1, [0028], process chamber 100 defines treatment space 101 for treating a substrate within); a substrate support unit configured to support the substrate in the interior space (Kim, Fig. 1, [0033], substrate supporting unit 200 supports substrate W in processing space 101); a dielectric plate disposed above the substrate support unit (Kim, Fig. 1, [0050], dielectric plate 700 is disposed above substrate supporting unit 200); an antenna unit disposed over or above the dielectric plate (Kim, Fig. 1, [0050], antenna 500 is disposed above dielectric plate 700), and including a through-hole (Kim, Fig. 1, [0048], hole 502 in center of antenna 500); a microwave application unit configured to apply microwaves to the antenna unit (Kim, Fig. 1, [0039], microwave applying unit 400 applies microwaves to the antenna 500), wherein an inner conductor of the microwave application unit is coupled via the through-hole (Figs. 1-2, #434 coupled to #500 via #502); a slow-wave plate disposed on the antenna unit (Kim, Fig. 1, [0049], wave plate 600 is disposed on antenna 500); and wherein an entirety of an inner sidewall of the process chamber is directly exposed to plasma generated within the process chamber (Kim, Fig. 1, [0050], processing space 101 is open to the inner sidewalls of chamber 100, within which plasma is generated), and the antenna unit has side surfaces formed with a plurality of slots (Fig. 2, plurality of slots #501). Kim fails to teach an antenna unit shaped into a frustum, having a truncated cone or prismoidal shape; an air gap interposed between the antenna unit and the dielectric plate, and the air gap is shaped into the frustum, having the truncated cone or prismoidal shape. However, Ishii teaches an antenna unit shaped into a frustum, having a truncated cone or prismoidal shape (Ishii, Fig. 19, conductive plate 31A is conically shaped); an air gap interposed between the antenna unit and the dielectric plate (Ishii, Fig. 19, bottom outside edges of conductive plate 31A are in contact with dielectric plate 13, and there is a gap between the remainder of conductive plate 31A not in contact with dielectric 13), and the air gap is shaped into the frustum, having the truncated cone or prismoidal shape (Ishii, Fig. 19, bottom outside edges of conductive plate 31A are in contact with dielectric plate 13, and there is a gap between the remainder of conductive plate 31A not in contact with dielectric 13). Ishii is considered analogous art to the claimed invention because it is in the same field of semiconductor processing. When the antenna 500 having a central through-hole of Kim (Kim, Fig. 1) is modified to be conically shaped in the manner of conductive plate 31A of Ishii (Ishii, Fig. 19), the claim limitations are met. It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). The Examiner notes that the combination of references would necessarily teach wherein the inner conductor (Kim) is coupled to the air gap (Ishii) via the through-hole (Kim). Modified Kim does not teach wherein the plurality of slots are arranged more densely toward the antenna-unit top and farther apart from one another toward the antenna-unit bottom. However, Yoshikawa teaches wherein the plurality of slots are arranged more densely toward the middle and farther apart from one another toward the periphery (Yoshikawa – Fig. 4). It would be obvious to one of ordinary skill in the art, before the effective filing date of the instant application, to modify the arrangement of the plurality of slots of modified Kim to that of Yoshikawa in order to improve power distribution amongst the slots, enhance plasma stability, and increase in-plane symmetry of plasma (Yoshikawa – [0093]-[0094]). The Examiner notes the middle/periphery zones of Yoshikawa would correspond to the top and bottom of the modified Kim apparatus, meeting the limitations of the claim as a combination. Regarding claim 2, Kim teaches wherein the antenna unit has a bottom end that is in contact with an edge of the dielectric plate (Kim, Fig. 1, [0050], bottom end of antenna 500 is in contact with edge of dielectric plate 700). Regarding claim 3, Kim teaches wherein the slow-wave plate surrounds outer surfaces of the antenna unit (Kim, Fig. 1, [0049], wave plate 600 is disposed on antenna 500). Regarding claim 4, Kim fails to teach wherein the antenna unit is shaped into a truncated cone. However, Ishii teaches wherein the antenna unit is shaped into a truncated cone (Ishii, Fig. 19, conductive plate 31A is conically shaped). When the antenna 500 having a central through-hole of Kim (Kim, Fig. 1) is modified to be conically shaped in the manner of conductive plate 31A of Ishii (Ishii, Fig. 19), the claim limitations are met. It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 8, Kim fails to teach wherein the antenna unit has a trapezoidal cross section cut in a direction perpendicular to a top surface of the dielectric plate. However, Ishii teaches wherein the antenna unit has a trapezoidal cross section cut in a direction perpendicular to a top surface of the dielectric plate (Ishii, Fig. 19, conductive plate 31A is conically shaped). When the antenna 500 having a central through-hole of Kim (Kim, Fig. 1) is modified to be conically shaped in the manner of conductive plate 31A of Ishii (Ishii, Fig. 19), the resulting truncated cone shape of the antenna has a cross section that is a trapezoid, wherein the top and bottom are flat, connected by sloping sides on each end. It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 9, Kim fails to teach wherein the antenna unit has varying cross-sections cut in a direction parallel to a top surface of the dielectric plate to provide gradually increasing cross- sections from top to bottom ends of the antenna unit. However, Ishii teaches wherein the antenna unit has varying cross-sections cut in a direction parallel to a top surface of the dielectric plate to provide gradually increasing cross- sections from top to bottom ends of the antenna unit (Ishii, Fig. 19, conductive plate 31A is conically shaped, where the diameter of conductive plate 31A increases moving from top to bottom). It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 10, Kim teaches an apparatus for processing a substrate (Kim, Fig. 1, [0027], substrate processing apparatus 10), comprising: a process chamber configured to define an interior space for internally processing a substrate (Kim, Fig. 1, [0028], process chamber 100 defines treatment space 101 for treating a substrate within); a substrate support unit configured to support the substrate in the interior space (Kim, Fig. 1, [0033], substrate supporting unit 200 supports substrate W in processing space 101); a dielectric plate disposed above the substrate support unit (Kim, Fig. 1, [0050], dielectric plate 700 is disposed above substrate supporting unit 200); an antenna unit disposed over or above the dielectric plate (Kim, Fig. 1, [0050], antenna 500 is disposed above dielectric plate 700); a microwave application unit configured to apply microwaves to the antenna unit (Kim, Fig. 1, [0039], microwave applying unit 400 applies microwaves to the antenna 500); wherein an inner conductor of the microwave application unit is coupled via the through-hole (Figs. 1-2, #434 coupled to #500 via #502); wherein the antenna unit has a top end that is connected to a bottom end of the microwave application unit (Kim, Fig. 1, [0048], lower end of inner conductor 434 of microwave unit 400 passes through hole 502 and is coupled to antenna 500), the side surfaces of the antenna unit have a bottom end that is in contact with an edge of the dielectric plate (Kim, Fig. 1, [0050], bottom end of antenna 500 is in contact with edge of dielectric plate 700), and an entirety of an inner sidewall of the process chamber is directly exposed to plasma generated within the process chamber (Kim, Fig. 1, [0050], processing space 101 is open to the inner sidewalls of chamber 100, within which plasma is generated), and the antenna unit has side surfaces formed with a plurality of slots (Fig. 2, plurality of slots #501). Kim fails to teach an antenna unit including side surfaces inclined with respect to a top surface of the dielectric plate, the antenna unit being shaped into a frustum; an air gap interposed between the antenna unit and the dielectric plate, the bottom end of the antenna unit is larger than the top end of the antenna unit in cross- section as taken in a direction parallel to the top surface of the dielectric plate, and the air gap includes side surfaces inclined with respect to a top surface of the dielectric plate, the air gap being shaped into the frustum, and the bottom end of the air gap is larger than the top end of the air gap in cross-section as taken in a direction parallel to the top surface of the dielectric plate. However, Ishii teaches an antenna unit including side surfaces inclined with respect to a top surface of the dielectric plate (Ishii, Fig. 19, conductive plate 31A is conically shaped, where sides are sloped/inclined with respect to parallel dielectric plate 13 surface); an air gap interposed between the antenna unit and the dielectric plate (Ishii, Fig. 19, bottom outside edges of conductive plate 31A are in contact with dielectric plate 13, and there is a gap between the remainder of conductive plate 31A not in contact with dielectric 13), the bottom end of the antenna unit is larger than the top end of the antenna unit in cross- section as taken in a direction parallel to the top surface of the dielectric plate (Ishii, Fig. 19, conductive plate 31A is conically shaped, where the diameter of conductive plate 31A increases moving from top to bottom, where the cross-section plane is taken parallel with dielectric plate), and the air gap includes side surfaces inclined with respect to a top surface of the dielectric plate, the air gap being shaped into the frustum, and the bottom end of the air gap is larger than the top end of the air gap in cross-section as taken in a direction parallel to the top surface of the dielectric plate (Ishii, Fig. 19, bottom outside edges of conductive plate 31A are in contact with dielectric plate 13, and there is a gap between the remainder of conductive plate 31A not in contact with dielectric 13, where the area of the gap decreases when moving from the bottom to the top of the plate 31A in a vertical direction). When the antenna 500 having a central through-hole of Kim (Kim, Fig. 1) is modified to be conically shaped in the manner of conductive plate 31A of Ishii (Ishii, Fig. 19), the claim limitations are met. It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). The Examiner notes that the combination of references would necessarily teach wherein the inner conductor (Kim) is coupled to the air gap (Ishii) via the through-hole (Kim). Modified Kim does not teach wherein the plurality of slots are arranged more densely toward the antenna-unit top and farther apart from one another toward the antenna-unit bottom. However, Yoshikawa teaches wherein the plurality of slots are arranged more densely toward the middle and farther apart from one another toward the periphery (Yoshikawa – Fig. 4). It would be obvious to one of ordinary skill in the art, before the effective filing date of the instant application, to modify the arrangement of the plurality of slots of modified Kim to that of Yoshikawa in order to improve power distribution amongst the slots, enhance plasma stability, and increase in-plane symmetry of plasma (Yoshikawa – [0093]-[0094]). The Examiner notes the middle/periphery zones of Yoshikawa would correspond to the top and bottom of the modified Kim apparatus, meeting the limitations of the claim as a combination. Regarding claim 11, Kim fails to teach wherein the side surfaces of the antenna unit are inclined and connected to the top surface of the dielectric plate at an inclination angle of less than 90 degrees. However, Ishii teaches wherein the side surfaces of the antenna unit are inclined and connected to the top surface of the dielectric plate at an inclination angle of less than 90 degrees (Ishii, Fig. 19, conductive plate 31A is conically shaped, where sides are sloped/inclined at an angle less than 90 degrees with respect to parallel dielectric plate 13 surface). It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 12, Kim teaches a through-hole formed between the top end of the antenna unit and the bottom end of the antenna unit (Kim, Fig. 1, [0048], hole 502 in center of antenna 500) shaped into the frustum. As mentioned previously in the rejection of claim 10 above, from which this claim depends, when the antenna 500 having a central through-hole of Kim (Kim, Fig. 1) is modified to be conically shaped in the manner of conductive plate 31A of Ishii (Ishii, Fig. 19), the claim limitations are met. It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 13, Kim fails to teach a slow-wave plate disposed on the antenna unit and surrounding the side surfaces of the antenna unit, which are inclined. However, Ishii teaches a slow-wave plate disposed on the antenna unit and surrounding the side surfaces of the antenna unit, which are inclined (Ishii, Fig. 19, [0063], delay member 39 accommodates side surfaces of conically sloped conductive member 31A). It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 14, Kim fails to teach a slow-wave plate disposed on the antenna unit and surrounding the side surfaces of the antenna unit, which are inclined. However, Ishii teaches a slow-wave plate disposed on the antenna unit and surrounding the side surfaces of the antenna unit, which are inclined (Ishii, Fig. 19, [0063], delay member 39 accommodates side surfaces of conically sloped conductive member 31A). It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 16, Kim teaches an apparatus for processing a substrate (Kim, Fig. 1, [0027], substrate processing apparatus 10), comprising: a process chamber configured to define an interior space for internally processing a substrate (Kim, Fig. 1, [0028], process chamber 100 defines treatment space 101 for treating a substrate within); a substrate support unit configured to support the substrate in the interior space (Kim, Fig. 1, [0033], substrate supporting unit 200 supports substrate W in processing space 101); a dielectric plate disposed above the substrate support unit (Kim, Fig. 1, [0050], dielectric plate 700 is disposed above substrate supporting unit 200); an antenna unit disposed over or above the dielectric plate (Kim, Fig. 1, [0050], antenna 500 is disposed above dielectric plate 700); a microwave application unit configured to apply microwaves to the antenna unit (Kim, Fig. 1, [0039], microwave applying unit 400 applies microwaves to the antenna 500); wherein an inner conductor of the microwave application unit is coupled via the through-hole (Figs. 1-2, #434 coupled to #500 via #502); an entirety of an inner sidewall of the process chamber is directly exposed to plasma generated within the process chamber (Kim, Fig. 1, [0050], processing space 101 is open to the inner sidewalls of chamber 100, within which plasma is generated), and the antenna unit has side surfaces formed with a plurality of slots (Fig. 2, plurality of slots #501). Kim fails to teach an antenna unit including side surfaces inclined with respect to a top surface of the dielectric plate, the antenna unit being shaped into a frustum; an air gap between the antenna unit and the dielectric plate, wherein the antenna unit has a trapezoidal cross section cut in a direction perpendicular to the top surface of the dielectric plate, the air gap includes side surfaces inclined with respect to a top surface of the dielectric plate, the air gap being shaped into the frustum, and the air gap has a trapezoidal cross section cut in a direction perpendicular to the top surface of the dielectric plate. However, Ishii teaches an antenna unit including side surfaces inclined with respect to a top surface of the dielectric plate (Ishii, Fig. 19, conductive plate 31A is conically shaped, where sides are sloped/inclined at an angle less than 90 degrees with respect to parallel dielectric plate 13 surface), the antenna unit being shaped into a frustum; an air gap between the antenna unit and the dielectric plate (Ishii, Fig. 19, bottom outside edges of conductive plate 31A are in contact with dielectric plate 13, and there is a gap between the remainder of conductive plate 31A not in contact with dielectric 13), wherein the antenna unit has a trapezoidal cross section cut in a direction perpendicular to the top surface of the dielectric plate (Ishii, Fig. 19, conductive plate 31A is conically shaped), the air gap includes side surfaces inclined with respect to a top surface of the dielectric plate, the air gap being shaped into the frustum, and the air gap has a trapezoidal cross section cut in a direction perpendicular to the top surface of the dielectric plate (Ishii, Fig. 19, bottom outside edges of conductive plate 31A are in contact with dielectric plate 13, and there is a gap between the remainder of conductive plate 31A not in contact with dielectric 13, where the area of the gap decreases when moving from the bottom to the top of the plate 31A in a vertical direction). When the antenna 500 having a central through-hole of Kim (Kim, Fig. 1) is modified to be conically shaped in the manner of conductive plate 31A of Ishii (Ishii, Fig. 19), the claim limitations are met. It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). The Examiner notes that the combination of references would necessarily teach wherein the inner conductor (Kim) is coupled to the air gap (Ishii) via the through-hole (Kim). Modified Kim does not teach wherein the plurality of slots are arranged more densely toward the antenna-unit top and farther apart from one another toward the antenna-unit bottom. However, Yoshikawa teaches wherein the plurality of slots are arranged more densely toward the middle and farther apart from one another toward the periphery (Yoshikawa – Fig. 4). It would be obvious to one of ordinary skill in the art, before the effective filing date of the instant application, to modify the arrangement of the plurality of slots of modified Kim to that of Yoshikawa in order to improve power distribution amongst the slots, enhance plasma stability, and increase in-plane symmetry of plasma (Yoshikawa – [0093]-[0094]). The Examiner notes the middle/periphery zones of Yoshikawa would correspond to the top and bottom of the modified Kim apparatus, meeting the limitations of the claim as a combination. Regarding claim 18, Kim fails to teach a slow-wave plate disposed on the antenna unit and surrounding the side surfaces of the antenna unit, which are inclined. However, Ishii teaches a slow-wave plate disposed on the antenna unit and surrounding the side surfaces of the antenna unit, which are inclined (Ishii, Fig. 19, [0063], delay member 39 accommodates side surfaces of conically sloped conductive member 31A). It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Regarding claim 19, Kim fails to teach wherein the antenna unit has varying cross-sections cut in a direction parallel to the top surface of the dielectric plate to provide gradually increasing cross-sections from top to bottom ends of the antenna unit. However, Ishii teaches wherein the antenna unit has varying cross-sections cut in a direction parallel to the top surface of the dielectric plate to provide gradually increasing cross-sections from top to bottom ends of the antenna unit (Ishii, Fig. 19, conductive plate 31A is conically shaped, where the diameter of conductive plate 31A increases moving from top to bottom, where the cross-section plane is taken parallel with dielectric plate). It would have been obvious to one ordinarily skilled in the art at the time of filing to have altered the slow-wave plate and antenna of Kim from a flat shape to a conical shape as taught by Ishii as doing so produces a more uniform plasma distribution when using a conical shape, avoiding a high plasma density generation at the center when the conventional flat parallel plates are used (Ishii, Figs. 5A-5B, [0074]). Response to Arguments Applicant’s arguments concerning the limitation: “an inner conductor of the microwave application unit is coupled to the air gap via the through-hole” (Remarks, pg. 8) have been carefully considered but are not persuasive. Particularly, Applicant is analyzing the prior art in a piecemeal fashion rather than considering what the combined teachings of the references would convey to a PHOSITA as proposed by the Examiner. The courts have held that one cannot show nonobviousness by attacking references individually where the rejections are based on combinations of references. See In re Keller, 642 F.2d 413, 208 USPQ 871 (CCPA 1981); In re Merck & Co., 800 F.2d 1091, 231 USPQ 375 (Fed. Cir. 1986). The Examiner respectfully submits that if a PHOSITA were using the Kim reference as a starting point, which reasonably shows the inner conductor coupled to the bottom of the antenna through a through-hole (see Figs. 1-2, #434 through #500 via #502), and incorporating the air gap feature of Ishii (see Fig. 1), said PHOSITA would simply introduce a space similar to Ishii between the existing features of Kim. There would be no logical reason a PHOSITA would also modify the inner conductor of Kim to have the connection structure of Ishii, as proposed by Applicant. As an aside, the Examiner notes claims 1, 10, and 16 do not positively recite the “inner conductor” as a feature of the claimed apparatus, but rather recite it as part of an intended use of the apparatus. In accordance, while the Examiner has structured the rejection as if the inner conductor were structurally limiting, such a rejection is not strictly required and can be met if any inner conductor were later coupled to the air gap as claimed. Applicant’s arguments concerning the limitation: “the plurality of slots are arranged more densely toward the antenna-unit top and farther apart from one another toward the antenna-unit bottom” (Remarks, pg. 8) have been carefully considered but are moot in light of the new grounds of rejection as presented herein. The Examiner respectfully submits that Yoshikawa remedies any alleged deficiencies of the other prior art of record. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Kurt Sweely whose telephone number is (571)272-8482. The examiner can normally be reached Monday - Friday, 9:00am - 5:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Gordon Baldwin can be reached at (571)-272-5166. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Kurt Sweely/Primary Examiner, Art Unit 1718
Read full office action

Prosecution Timeline

Show 1 earlier event
Aug 07, 2025
Non-Final Rejection mailed — §103
Oct 31, 2025
Response Filed
Jan 28, 2026
Final Rejection mailed — §103
Apr 10, 2026
Request for Continued Examination
Apr 13, 2026
Response after Non-Final Action
May 06, 2026
Non-Final Rejection mailed — §103
Aug 05, 2026
Response Filed
Sep 15, 2026
Final Rejection mailed — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12744182
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA GENERATING APPARATUS
3y 7m to grant Granted Sep 22, 2026
Patent 12723311
DUAL AMPOULE SEPARATOR PLATE AND METHOD
4y 6m to grant Granted Sep 01, 2026
Patent 12716130
PRECURSOR SOURCE ARRANGEMENT AND ATOMIC LAYER DEPOSITION APPARATUS
4y 8m to grant Granted Aug 25, 2026
Patent 12692601
APPARATUS AND SYSTEM FOR DELIVERING GAS TO A PROCESS CHAMBER
4y 9m to grant Granted Jul 28, 2026
Patent 12695068
FOCUS RING, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE SAME
4y 1m to grant Granted Jul 28, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

5-6
Expected OA Rounds
53%
Grant Probability
87%
With Interview (+33.9%)
3y 8m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 231 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month