Prosecution Insights
Last updated: April 19, 2026
Application No. 17/948,750

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

Final Rejection §102§103
Filed
Sep 20, 2022
Examiner
HA, NATHAN W
Art Unit
2814
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Lapis Technology Co., Ltd.
OA Round
2 (Final)
91%
Grant Probability
Favorable
3-4
OA Rounds
2y 4m
To Grant
99%
With Interview

Examiner Intelligence

Grants 91% — above average
91%
Career Allow Rate
1043 granted / 1144 resolved
+23.2% vs TC avg
Moderate +8% lift
Without
With
+7.7%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
10 currently pending
Career history
1154
Total Applications
across all art units

Statute-Specific Performance

§101
0.3%
-39.7% vs TC avg
§103
43.5%
+3.5% vs TC avg
§102
34.8%
-5.2% vs TC avg
§112
6.3%
-33.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1144 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Objections Previously objected: Claim 6 is objected to because of the following informalities: claim 6 is missing a period (.) at the end. Appropriate correction is required. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-7 and 13 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Sasaki et al. (US 2005/0263863, newly cited, hereinafter, Sasaki.) In regard to claim 1, in figs. 1-16, for example, Sasaki discloses a semiconductor device structure 1 (para [0060]) comprising: a semiconductor IC 3 (para [0061]) including a semiconductor integrated circuit (memory circuits, for example, fig. 1), a first IC terminal and a second IC terminal 3c (para [0063]); a capacitor element 15 (para [0079], and fig. 16, for example) including a first terminal and a second terminal; a support portion (substrate 8, para [0063]), including a support region with a principal surface that supports the capacitor element and the semiconductor IC, fig, 18; a first conductor and a second conductor, or wires, 6 (para [0063]) that extend so as to connect the first terminal and second terminal of the capacitor element with, respectively, the first IC terminal and second IC terminal of the semiconductor IC (note: the second connection through Vss, see fig. 16); and a sealing body 7 (para [0063], and figs. 16 and 28) that encloses the capacitor element, the semiconductor IC, the first conductor, the second conductor and the support region, wherein, in a plan view, the first IC terminal and second IC terminal of the semiconductor IC, the first terminal and second terminal of the capacitor element, the first conductor and the second conductor are disposed at the inner side relative to an outer edge of the principal surface of the support region, the semiconductor integrated circuit includes an internal circuit and a voltage regulator that provides power to the internal circuit (figs. 14 and 21-22, and para [0080]), the voltage regulator has an output that is connected to the first IC terminal, an electrical connection including the first IC terminal of the semiconductor IC, the first conductor, the first terminal of the capacitor element, the second terminal of the capacitor element, the second conductor and the second IC terminal of the semiconductor IC is electrically closed by the semiconductor integrated circuit creating an antenna 12 (fig. 1 and para [0069].) Regarding claim 2, wherein the support portion includes a lead frame (para [0047] and fig. 23, for example), the lead frame includes a die pad, the die pad being the support region, and a plurality of lead terminals 5a spaced apart from the die pad, and the sealing body includes resin that seals in the capacitor element, the semiconductor IC, the first conductor, the second conductor and the die pad. Regarding claim 3, wherein at least one of the plurality of lead terminals is inflected in a first direction toward the capacitor element from the die pad. Fig. 1, for example. Regarding claim 4, wherein all of the plurality of lead terminals are inflected in a first direction toward the capacitor element from the die pad. Fig. 1. Regarding claim 5, wherein the first conductor includes a bonding wire that directly connects the first IC terminal of the semiconductor IC with the first terminal of the capacitor element. Fig. 16. Regarding claim 6, wherein the second conductor includes a bonding wire that directly connects the second IC terminal of the semiconductor IC with the principal surface (where the Vss is formed) of the support region, and the second terminal of the capacitor element is connected with the principal surface of the support region by a conductive adhesive, solder connection, for example, (para [0065]).) Regarding claim 7, as mentioned above, wherein the second conductor includes a bonding wire 6 that electrically directly connects the second IC terminal of the semiconductor IC with the second terminal of the capacitor element through Vss, Fig. 16. Regarding claim 13, as mentioned above, wherein the electrical connection closed by the semiconductor integrated circuit forms a loop-shaped antenna 12 (fig. 1 and para [0069].) Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 8-12 is/are rejected under 35 U.S.C. 103 as being unpatentable over Sasaki as applied to claim 1 above, and further in view of SHIMOYAMA et al. (US 2019/0088577, previously cited, hereinafter, Shimoyama.) In regard to claims 8-10, Sasaki discloses all of the claimed limitations as mentioned above, except the exact arrangement as currently claimed. Shimoyama, in fig. 24, discloses an analogous IC package (para [0038]) including leadframe with IC device CPC formed on the leads LD, die pad DP. Shimoyama further teaches the package is connected to a printed circuit board PB1 (para [0055]) in order to electrically connect the package to the board and to external devices through a conductive layer TM on the printed board; and a printed circuit board with a principal surface that includes a mounting area on which the semiconductor device is mounted, wherein the first IC terminal and second IC terminal of the semiconductor IC, the first terminal and second terminal of the capacitor element, the first conductor and the second conductor are provided between the printed circuit board and the support region. This is common in the art. Regarding claim 11, wherein the conductive layer is a simply connected conductive film provided at the mounting area. Fig. 24. Regarding claim 12, the combination further discloses, wherein, in a plan view seen in the first axis direction, an outer edge of the conductive layer encompasses an outer edge of the capacitor element and encompasses the first conductor and the second conductor, and the outer edge of the conductive layer overlaps with a portion of the semiconductor IC. Sasaki’s figs. 1 and 16. Response to Arguments Applicant’s arguments with respect to claim(s) 1-12 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Note: in the remarks the Applicant states that a dependent claim 3 has been added; it is actually claim 13 has been added (see the remarks’ page 6, second paragraph. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to NATHAN W HA whose telephone number is (571)272-1707. The examiner can normally be reached M-T: 8:00AM-6:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, WAEL FAHMY can be reached at (571)-272-1705. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /NATHAN W HA/Primary Examiner, Art Unit 2814
Read full office action

Prosecution Timeline

Sep 20, 2022
Application Filed
Jul 07, 2025
Non-Final Rejection — §102, §103
Sep 30, 2025
Response Filed
Nov 24, 2025
Final Rejection — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604554
PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM, AND MOVING OBJECT
2y 5m to grant Granted Apr 14, 2026
Patent 12604619
DISPLAY DEVICE
2y 5m to grant Granted Apr 14, 2026
Patent 12599009
PACKAGE STRUCTURE
2y 5m to grant Granted Apr 07, 2026
Patent 12598795
SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12598767
Dielectric Layers for Semiconductor Devices and Methods of Forming the Same
2y 5m to grant Granted Apr 07, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
91%
Grant Probability
99%
With Interview (+7.7%)
2y 4m
Median Time to Grant
Moderate
PTA Risk
Based on 1144 resolved cases by this examiner. Grant probability derived from career allow rate.

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