Prosecution Insights
Last updated: May 29, 2026
Application No. 17/965,759

TRANSISTOR TYPE SENSOR

Non-Final OA §103
Filed
Oct 13, 2022
Priority
Oct 20, 2021 — JP 2021-171511
Examiner
FREY, KIMBERLY NEWMAN
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Jnc Corporation
OA Round
3 (Non-Final)
69%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
47%
With Interview

Examiner Intelligence

Grants 69% — above average
69%
Career Allowance Rate
11 granted / 16 resolved
+0.8% vs TC avg
Minimal -21% lift
Without
With
+-21.4%
Interview Lift
resolved cases with interview
Typical timeline
3y 2m
Avg Prosecution
37 currently pending
Career history
78
Total Applications
across all art units

Statute-Specific Performance

§103
77.8%
+37.8% vs TC avg
§102
19.1%
-20.9% vs TC avg
§112
2.5%
-37.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 16 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 03/24/26 has been entered. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1,4, and 9 are rejected under U.S.C. 103 as being unpatentable over Longo et al.; US 2021/0364466 A1; 03/2019 in view of Wasserman et al.; US 12,263,339 B2; 08/2021 and further in view of Nakano; US 2023/0352371 A1; 04/2021 Claim 1: Longo discloses a transistor type sensor ( Fig. 3 molecularly imprinted polymer (MIP) #325 ) comprising: a detection electrode ( [0097] An electrochemically polymerized MIP membrane can be directly grown on the metallic gate of an FET by using the metallic as an electrode ) that detects a compound by capturing the compound ( [0043] a biological receptor molecule that binds to at least a portion of a molecule of interest ); and a field effect transistor that has a gate electrode connected to the detection electrode ( [0043] a sensing surface (e.g. a surface of an electrode, e.g., a surface of a gate or extended gate of an FET ) the second surface of the main body is provided with a film of a molecularly imprinted polymer having a space to which the compound is allowed to bond ( [0024] the molecularly imprinted polymer membrane comprises a plurality of cavities that are shaped and sized to selectively bind to a molecule of interest ). Longo does not appear to disclose the detection electrode comprises: a detection electrode substrate; and a main body having a first surface and a second surface opposite to the first surface, wherein the detection electrode substrate is disposed on the first surface of the main body; the main body is electrically connected to the gate electrode of the field effect transistor via a conducting wire. However, Wasserman teaches the detection electrode comprises: a detection electrode substrate ( Fig. 1A #102A) ; and a main body ( Fig. 1A #103A ) having a first surface and a second surface opposite to the first surface ( Col. 3 line 67 – Col. 4 line 2 the dielectric layer 103A has a first surface facing the subject’s body and a second surface opposite the first surface ), wherein the detection electrode substrate ( Fig. 1A #102A) is disposed on the first surface of the main body ( Fig. 1A shows #101B is contacting #102A ); Wasserman does not appear to disclose the main body is electrically connected to the gate electrode of the field effect transistor via a conducting wire. However, Nakano teaches the main body ( Fig. 18: main body 301 ) is electrically connected to the gate electrode ( Fig. 18 terminal 302g ) of the field effect transistor ( Fig. 18 FET with 302d, 302g, and 302s ) via a conducting wire ( [0260] a gate pad 70 of the semiconductor device 1 is electrically connected to the terminal 302g by the bonding wire 303g ) It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Nakano with Longo and Wasserman to implement the detection electrode comprises: a detection electrode substrate; and a main body having a first surface and a second surface opposite to the first surface, wherein the detection electrode substrate is disposed on the first surface of the main body; the main body is electrically connected to the gate electrode of the field effect transistor via a conducting wire because this approach improves signal integrity and shielding. Claim 4: Longo, Wasserman, and Nakano disclose the transistor type sensor according to claim 1 ( as discussed above). Longo teaches the molecularly imprinted polymer film is formed of a monomer having an amino group-derived moiety ( [0033] a method of manufacturing a molecularly imprinted polymer membrane, the method comprising: contacting a template species with one or more monomers [ e.g. one or more functional monomers ( e.g. monomers comprising an amine group). Claim 9: Longo, Wasserman, and Nakano disclose the transistor type sensor according to claim 1 (as discussed above). Longo teaches the transistor type sensor detects the detection target in a solution or dispersion liquid ( [0031] the one or molecules of interest are detected and/or monitored in the biofluid continuously and/or for an extended period of time). Claims 2 and 3 are rejected under U.S.C. 103 as being unpatentable over Longo et al.; US 2021/0364466 A1; 03/2019 in view of Wasserman et al.; US 12,263,339 B2; 08/2021 and Nakano; US 2023/0352371 A1; 04/2021 as it relates to claim 1 above and further in view of Naaman et al.; US 2015/0355139 A1; 06/2014 Claim 2: Longo, Wasserman, and Nakano discloses the transistor type sensor according to claim 1 ( as discussed above). Neither Longo nor Wasserman nor Nakano appear to disclose each space is formed such that each compound is allowed to be captured in the same orientation However, Naaman teaches each space is formed such that each compound is allowed to be captured in the same orientation ( [0147] It should further be noted that Protein G binds only the Fc terminal of the antibody and thus provides a preferred orientation of the antibody epitopes away from the surface, exposing the antigen-binding site to the analyte). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Naaman with Longo, Wasserman, and Nakano to implement each space is formed such that each compound is allowed to be captured in the same orientation because this approach would improve reproducibility and maximize sensitivity. Claim 3: Longo, Wasserman, Nakano, and Naaman disclose the transistor type sensor according to claim 2 ( as discussed above). Longo teaches a non-covalently bondable functional group of the molecularly imprinted polymer ( [0033] said polymer membrane comprising bound template species ( e.g. template species covalently or non-covalently attached to the polymer membrane) ) is exposed in the space toward the captured compound ( [0033] wherein the molecularly imprinted polymer membrane comprises a plurality of cavities that are shaped and sized to selectively bind to a molecule of interest). Claims 5 and 6 are rejected under U.S.C. 103 as being unpatentable over Longo et al.; US 2021/0364466 A1; 03/2019 in view of Wasserman et al.; US 12,263,339 B2; 08/2021 and Nakano; US 2023/0352371 A1; 04/2021 as it relates to claim 1 above and further in view of King Smith et al.; US 2014/0348707 A1; 04/2014 Claim 5: Longo, Wasserman, and Nakano disclose the transistor type sensor according to claim 1 ( as discussed above). Neither Longo nor Wasserman nor Nakano appear to disclose the compound includes a -SH group, a -S-S- bond, or a -C--C-H group However, King Smith teaches the compound includes a -SH group, a -S-S- bond, or a -C--C-H group ( [0100] Furthermore, the following Table B (oxytocin includes a disulfide bond (-S-S- )) indicates classes of compounds of which ISFET 900 and ISFET 1000 may be adapted by molecular imprinting of the sol-gel seed molecules #304 to detect). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of King Smith with Longo, Wasserman, and Nakano to implement the compound includes a -SH group, a -S-S- bond, or a -C--C-H group because these functional groups are important in biology and possess unique chemical properties that allow for specific and sensitive detection. Claim 6: Longo, Wasserman, Nakano, and King Smith disclose the transistor type sensor according to claim 5 ( as discussed above). Neither Longo nor Wasserman nor Nakano appear to disclose the compound is oxytocin. However, King Smith teaches the compound is oxytocin ( [0100] Furthermore, the following Table B (oxytocin) indicates classes of compounds of which ISFET 900 and ISFET 1000 may be adapted by molecular imprinting of the sol-gel seed molecules #304 to detect). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of King Smith with Longo, Wasserman, and Nakano to implement the compound is oxytocin because of its critical role in physiology and social behavior. Claim 7 is rejected under U.S.C. 103 as being unpatentable over Longo et al.; US 2021/0364466 A1; 03/2019 in view of Wasserman et al.; US 12,263,339 B2; 08/2021 and Nakano; US 2023/0352371 A1; 04/2021 as it relates to claim 1 above and further in view of Dastoor; US 12215374 B2; 05/2019 Claim 7: Longo, Wasserman, and Nakano disclose the transistor type sensor according to claim 1 ( as discussed above). Neither Longo nor Wasserman nor Nakano appear to disclose the field effect transistor is an organic semiconductor transistor. However, Dastoor teaches the field effect transistor is an organic semiconductor transistor ( Fig. 1 organic thin film transistor based sensor #100). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Dastoor with Longo, Wasserman, and Nakano to implement the field effect transistor is an organic semiconductor transistor because they can detect and convert the binding of biomolecules into an electrical signal. Claim 8 is rejected under U.S.C. 103 as being unpatentable over Longo et al.; US 2021/0364466 A1; 03/2019 in view of Wasserman et al.; US 12,263,339 B2; 08/2021 and Nakano; US 2023/0352371 A1; 04/2021 as it relates to claim 1 above and further in view of Goldsmith; US 12372521 B2; 08/2021 Claim 8: Longo, Wasserman, and Nakano disclose the transistor type sensor according to claim 1 (as discussed above). Neither Longo nor Wasserman nor Nakano appear to disclose the field effect transistor is a p-type semiconductor. However, Goldsmith teaches the field effect transistor is a p-type semiconductor ( Col. 20 lines 51 – 57 Fig. 25A #2052 and #2504 are fabricated from a semiconductor material (i.e. n-type or p-type semiconductors)). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention, to utilize the teachings of Goldsmith with Longo, Wasserman, and Nakano to implement the field effect transistor is a p-type semiconductor because it can be used to detect positively charged target molecules. Response to Amendment Applicant’s arguments, see pages 9-17 of remarks, filed 03/24/26, with respect to the rejection of claim 1 under 35 U.S.C. 103 have been fully considered and are persuasive. Therefore, the rejection has been withdrawn. However, upon further consideration, a new ground(s) of rejection is made in view of Nakano. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to KIMBERLY N FREY whose telephone number is (571)272-5068. The examiner can normally be reached Monday - Friday 7:30 am - 5 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Marlon Fletcher can be reached at (571)272-2063. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /K.N.F./Examiner, Art Unit 2817 /MARLON T FLETCHER/Supervisory Primary Examiner, Art Unit 2817
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Prosecution Timeline

Show 2 earlier events
Oct 13, 2025
Interview Requested
Oct 22, 2025
Applicant Interview (Telephonic)
Oct 22, 2025
Examiner Interview Summary
Nov 28, 2025
Response Filed
Jan 07, 2026
Final Rejection mailed — §103
Mar 24, 2026
Request for Continued Examination
Apr 01, 2026
Response after Non-Final Action
May 07, 2026
Non-Final Rejection mailed — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
69%
Grant Probability
47%
With Interview (-21.4%)
3y 2m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 16 resolved cases by this examiner. Grant probability derived from career allowance rate.

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