Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 1731 2817
This examiner grants 69% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18492327 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 17959780 | SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18297891 | SENSOR WITH LIGHT FILTER AND CROSSTALK REDUCTION MEDIUM | Non-Final OA | ILLUMINA, INC. |
| 18245923 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18024076 | DISPLAY SUBSTRATE AND DISPLAY DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18566092 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | Mitsubishi Electric Corporation |
| 18196971 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18071150 | DISPLAY PANEL AND DISPLAY APPARATUS | Non-Final OA | Samsung Display Co., LTD. |
| 18226360 | LIGHT-EMITTING DEVICE | Non-Final OA | Semiconductor Energy Laboratory Co., Ltd. |
| 17561832 | THROUGH-MOLD-INTERCONNECT STRUCTURE ON AN IC DIE DIRECTLY BONDED TO ANOTHER IC DIE | Final Rejection | Intel Corporation |
| 18012126 | THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR | Non-Final OA | TDK Corporation |
| 17943610 | CHIP PARTS | Final Rejection | ROHM CO., LTD. |
| 17936553 | SEMICONDUCTOR DEVICE, METHOD OF FORMING THE SAME AND LAYOUT DESIGN MODIFICATION METHOD OF THE SAME | Non-Final OA | MEDIATEK INC. |
| 18489540 | SEMICONDUCTOR DEVICE | Non-Final OA | Murata Manufacturing Co., Ltd. |
| 17806748 | ELECTRONIC COMPONENT MODULE | Final Rejection | Murata Manufacturing Co., Ltd. |
| 18103350 | NON-VOLATILE MEMORY CELL STRUCTURES AND METHODS OF MANUFACTURING THEREOF | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18349735 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE | Final Rejection | SK hynix Inc. |
| 18090087 | THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 17405657 | LIGHT-EMITTING DEVICE AND MEASUREMENT DEVICE | Final Rejection | FUJIFILM Business Innovation Corp. |
| 17644580 | LOW-POWER PHOTONIC DEMODULATOR | Final Rejection | The Hong Kong University of Science and Technology |
| 18499100 | SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE WITH FIELD PLATE SPACERS AND METHOD OF FABRICATION | Non-Final OA | NXP USA, Inc. |
| 18181054 | MEMORY BIT CELLS WITH THREE-DIMENSIONAL CROSS FIELD EFFECT TRANSISTORS | Final Rejection | Advanced Micro Devices, Inc. |
| 18013768 | SUBSTRATE SUPPORT WITH UNIFORM TEMPERATURE ACROSS A SUBSTRATE | Non-Final OA | LAM RESEARCH CORPORATION |
| 18489440 | OUTPUT CIRCUIT | Non-Final OA | Socionext Inc. |
| 18319519 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE | Non-Final OA | TOPPAN Inc. |
| 18526344 | FULLY DEPLETED SEMICONDUCTOR-ON-INSULATOR SWITCH WITH BUILT-IN ELECTROSTATIC DISCHARGE PROTECTION | Non-Final OA | GlobalFoundries U.S. Inc. |
| 18047405 | ION-SENSITIVE FIELD EFFECT TRANSISTOR ABOVE MICROFLUIDIC CAVITY FOR ION DETECTION AND IDENTIFICATION | Non-Final OA | GlobalFoundries U.S. Inc. |
| 18065122 | Method for Forming a Precursor Semiconductor Device Structure | Final Rejection | IMEC VZW |
| 18398227 | Layout pattern of static random-access memory | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18252968 | MULTI-THRESHOLD VOLTAGE GALIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR | Non-Final OA | NATIONAL RESEARCH COUNCIL OF CANADA |
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