Prosecution Insights
Last updated: April 19, 2026
Application No. 17/977,810

OPTICAL SENSOR WITH TSV STRUCTURE

Non-Final OA §103
Filed
Oct 31, 2022
Examiner
VALENZUELA, PATRICIA D
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Texas Instruments Incorporated
OA Round
1 (Non-Final)
90%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
92%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allow Rate
645 granted / 715 resolved
+22.2% vs TC avg
Minimal +2% lift
Without
With
+2.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
63 currently pending
Career history
778
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
60.1%
+20.1% vs TC avg
§102
19.9%
-20.1% vs TC avg
§112
8.6%
-31.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 715 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of claims 7-20 in the reply filed on 09/30/25 is acknowledged. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 7-20 is/are rejected under 35 U.S.C. 103 as being unpatentable over Meier(USPGPUB DOCUMENT: 2021/0020528, hereinafter Meier) in view of Cook (USPGPUB DOCUMENT: 2021/0098331, hereinafter Cook). Re claim 7 Meier discloses a method comprising: attaching dies(208) on a substrate(200) via a die attach material(214); placing a sensor(209) in a sensor(209) area on an active surface of the dies(208); depositing electrical interconnects(232) on the active surface of the dies(208) near a perimeter of the dies(208); forming channels between adjacent dies(208); depositing a first photoresist material layer(234) over the substrate(200), the dies(208), the sensor(209), and the electrical interconnects(232); patterning the first photoresist material layer(234), to form sensor(209) openings over each sensor(209), and to expose a portion of a contact surface of the electrical interconnects(232); depositing a metal plating layer(222), the metal plating layer(222) electrically coupled to the contact surface of the electrical interconnects(232) and abutting the first photoresist material layer(234) surrounding the sensor(209); Meier does not disclose a forming channels between adjacent dies(208); patterning the first photoresist material layer(234) to form channel openings in the channels, to form sensor(209) openings over each sensor(209), and singulating the substrate(200) between adjacent dies(208) to expose end portions of the metal plating layer(222). Cook disclose a forming channels[0024] between adjacent dies(122); and singulating the substrate[0020 of Cook]. It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Cook to the teachings of Meier in order to improves the transfer of heat from the electronic circuits [0019, Cook]. In doing so, patterning the first photoresist material layer(234 of Meier) to form channel openings in the channels[0024 of Cook], to form sensor(209) openings over each sensor(209), and singulating the substrate[0020 of Cook] between adjacent dies(208 of Meier) to expose end portions of the metal plating layer(222 of Meier). Re claim 8 Meier and Cook disclose the method of claim 7, wherein forming channels between adjacent dies(208) includes partially cutting into the substrate(200) with a cutting blade. Re claim 9 Meier and Cook disclose the method of claim 7, wherein depositing a metal plating layer(222) in the channel openings forms through silicon vias in the substrate(200) between adjacent dies(208). Re claim 10 Meier and Cook disclose the method of claim 7, wherein prior to depositing a metal plating layer(222) in the channel openings, the method further comprising depositing a second photoresist material layer over each sensor(209) and the first photoresist material layer(234) surrounding the sensor(209). Re claim 11 Meier and Cook disclose the method of claim 10 further comprising depositing a seed layer in the channel openings, the seed layer electrically coupled to the contact surface of the electrical interconnects(232) and abutting the first photoresist material layer(234) surrounding the sensor(209). Re claim 12 Meier and Cook disclose the method of claim 11, wherein prior to singulating the substrate(200) between adjacent dies(208) to expose end portions of the metal plating layer(222), the method further comprising removing the second photoresist material layer. Re claim 13 Meier and Cook disclose the method of claim 12 further comprising etching[0024 of Cook] exposed portions of the seed layer. Re claim 14 Meier and Cook disclose the method of claim 13 further comprising back grinding the substrate(200) to expose a surface of the metal plating layer(222). Re claim 15 Meier discloses a method of fabricating an integrated circuit sensor(209) package comprising: placing a sensor(209) and electrical interconnects(232) on a die(208) attached to a substrate(200); and coupling conductive terminals(222) to the electrical interconnects(232), the conductive terminals(222) extending along a side of the electrical interconnects(232), the die, and the substrate(200) to an external terminal. Meier does not disclose forming a cavity in a permanent photoresist material layer(234) surrounding the sensor(209); Cook disclose forming a cavity(101 in Fig 1A of Cook); It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Cook to the teachings of Meier in order to improves the transfer of heat from the electronic circuits [0019, Cook]. In doing so, forming a cavity(101 in Fig 1A of Cook) in a permanent photoresist material layer(234 of Meier) surrounding the sensor(209 of Meier); Re claim 16 Meier and Cook disclose the method of claim 15, wherein placing a sensor(209) and electrical interconnects(232) on a die(208) attached to a substrate(200) includes attaching the sensor(209) to a sensor(209) area on an active surface of the die and attaching the electrical interconnects(232) on the active surface of the die near a perimeter of the die. Re claim 17 Meier and Cook disclose the method of claim 16, wherein forming a cavity in a permanent photoresist material layer(234) surrounding the sensor(209) includes patterning the permanent photoresist material layer(234) to form the cavity over the sensor(209) area on the active surface of the die(208) and to expose the sensor(209) to an external environment. Re claim 18 Meier and Cook disclose the method of claim 17, wherein prior to coupling conductive terminals(222) to the electrical interconnects(232), the method further comprising depositing a seed layer on a contact surface of the electrical interconnects(232), the seed layer extending along a side of the electrical interconnects(232), the die(208), and the substrate(200) to the external terminal. Re claim 19 Meier and Cook disclose the method of claim 18, wherein coupling conductive terminals(222) to the electrical interconnects(232) includes depositing a metal plating layer(222) on the seed layer. Re claim 20 Meier and Cook disclose the method of claim 19, wherein the seed layer and the metal plating layer(222) both abut the permanent photoresist material layer(234) surrounding the sensor(209). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to PATRICIA D VALENZUELA whose telephone number is (571)272-9242. The examiner can normally be reached Monday-Friday 10am-6pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Partridge can be reached at 571-270-1402. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /PATRICIA D VALENZUELA/Primary Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Oct 31, 2022
Application Filed
Jan 09, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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2y 5m to grant Granted Mar 31, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
90%
Grant Probability
92%
With Interview (+2.1%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 715 resolved cases by this examiner. Grant probability derived from career allow rate.

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