DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Status of the Claims
Species 1 was elected.
Amendment filed November 28, 2025 is acknowledged. Non-Elected Species, Claims 4 and 6 have been withdrawn from consideration. Claims 1-7 are pending.
Action on merits of claims 1-3, 5 and 7 follows.
Specification
The newly submitted title is not descriptive. Title is:
A SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING A FIRST SURFACE PORTION FORMED IN ACTIVE REGION AND INTERMEDIATE REGION BEING VERTICALLY HIGHER THAN A SECOND SURFACE PORTION FORMED IN TERMINATION REGION
Drawings
The drawings were received on November 28, 2025. These drawings are unacceptable because new matters were injected.
Claim Rejections - 35 USC § 112
The following is a quotation of the first paragraph of 35 U.S.C. 112(a):
(a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention.
Claims 1-3, 5 and 7 are rejected under 35 U.S.C. 112(a) as failing to comply with the enablement requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to enable one skilled in the art to which it pertains, or with which it is most nearly connected, to make and/or use the invention.
Amended Claim 1, lines 68-69, recites: “the plurality of second semiconductor regions (of first conductivity type (n) 3) extend from the active region to the intermediate region and reach the stepped portion”.
As shown in FIGs. 2 and 4B, there is no “second semiconductor regions” (3a/3b) in the intermediate region 20. Under the “first semiconductor region” (4) are the “third high-concentration region” (13/13a).
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Further, amended claim 1, lines 70-74, recites: “each of the plurality of second semiconductor regions is between the third high-concentration region and the parallel pn layer, positioned between a respective pair of the plurality of first and second protrusions of the third high-concentration region that are adjacent to each other, and is adjacent to a corresponding one of the plurality of first-conductivity-type regions of the parallel pn layer in the depth direction”
Again, as shown in FIGs. 2 and 4B, there is no “second semiconductor regions (3) is between the third high-concentration region (13) and the parallel pn layer, (60)”
As shown in FIG. 6, there is no third high-concentration region (13/13a), thus, there is no “second semiconductor region” (3) between the third high-concentration region (13/13a) and the parallel pn layer (60).
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Furthermore, amended claim 1, lines 75-77, recites: “among the plurality of second semiconductor regions, ones in the second intermediate region have an impurity concentration that is higher than an impurity concentration of others outside the second intermediate region”.
Again, as shown in FIGs. 2 and 4B, there is no “second semiconductor region” (3), ones in the second intermediate region 20.
As discussed in the previous Office Action, the implantations 71 and 73, FIGs. 10-11, are to increase the n-type (first conductivity type) into the second semiconductor region 3 (3a-3b).
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In FIG. 10, the entirety of layer 43, in active region 10 and intermediate region 20, is subject to ions implantation 71 of n-type, to form second semiconductor region 3 (3a+3b).
In FIGs. 2, 4B, 6 and 10, in the intermediate region 20, the “second semiconductor region” (3) and the “third high-concentration region” (13/13a) are not co-existed.
Therefore, combination of the limitations taken a whole, the claim(s) contains subject matter which was not described in the specification in such a way as to enable one skilled in the art to which it pertains, or with which it is most nearly connected, to make and/or use the invention.
Since the scope of claim 1 cannot be fairly determined, an action on merits of the claims are impossible.
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
Claims 1-3, 5 and 7 are rejected under 35 U.S.C. 112(b) as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Amended claim 1, lines 70-74, recites: “each of the plurality of second semiconductor regions is between the third high-concentration region and the parallel pn layer, positioned between a respective pair of the plurality of first and second protrusions of the third high-concentration region that are adjacent to each other, and is adjacent to a corresponding one of the plurality of first-conductivity-type regions of the parallel pn layer in the depth direction”
As shown in FIGs. 2 and 4B, there is no “second semiconductor regions” (3a/3b) in the intermediate region 20. Under the “first semiconductor region” (4) are the “third high-concentration region” (13/13a).
As shown in FIG. 6, there is a second semiconductor region 3 (3a/3b) the first conductivity type (n), provided between the first semiconductor region (4) and the parallel pn layer (60) in the intermediate region (20), however, there is no third high-concentration region 13/13a.
These two FIGs. 4 and 6 are contradictory.
Therefore, claims 1-3, 5 and 7 are indefinite.
The scope of claim 1 cannot be fairly determined, and the limitations are contradictory, an action on merits of the claims are impossible.
Response to Arguments
Applicant's arguments filed November 28, 2025 have been fully considered but they are not persuasive.
FIG. 4 and FIG. 6 are contradictory.
As shown in FIGs. 2 and 4, there is a third high-concentration region (13/13a) of the second conductivity type, provided between the first semiconductor region (4) and the parallel pn layer (60) in the intermediate region (20).
However, as shown in FIG. 6, there is a second semiconductor region 3 (3a/3b) the first conductivity type (n), provided between the first semiconductor region (4) and the parallel pn layer (60) in the intermediate region (20), and there is no third high-concentration region 13/13a.
Applicant argument makes no sense.
Before the step as shown in FIGs. 10, 11. The process should be directed to FIG. 8, where layer 43 is completed and before the formation of layer 44 (p).
As shown in FIGs. 10-11, when n-type ions (71, 73) are implanted into layer 43, p-portions 11, 12a and 12b of layer 43 (FIG. 8) are converted to n-type layer 3 (3a, 3b).
The specification (Publication) para [0109], discloses: “In FIG. 10, reference numeral 71 is the ion implantation for forming the n-type region 3a, 3b”.
This is inline with FIG. 6, where in the intermediate region 20, the second semiconductor region 3 (3a-3b) is formed between the first semiconductor region 4 and the pn layer 60.
In FIG. 4, also discloses the intermediate region 20, however, the “third high-concentration region 13, 13a, of the second conductivity type (p) is formed between the first semiconductor region 4 and the pn layer 60.
The specification itself is contradictory.
The rejections are maintained.
Conclusion
The limitation of Claim 1 contravenes the disclosure. THIS ACTION IS MADE FINAL. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
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/ANH D MAI/ Primary Examiner, Art Unit 2893