Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2800 2814 2829 2889 2893
This examiner grants 38% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18329784 | SEMICONDUCTOR DEVICE HAVING CONTACT PLUG WITH AN UPPER CONDUCTIVE PATTERN FORMED ON AN UPPER SURFACE OF A LOWER CONDUCTIVE PATTERN | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18238714 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 17717493 | DISPLAY DEVICE HAVING A CAPPING LAYER WITH A THICKNESS OF ABOUT 280 ANGSTROMS TO ABOUT 360 ANGSTROMS DISPOSED ON AN EMISSION ELEMENT AN ANTI-REFLECTION LAYER DISPOSED ON THE CAPPING LAYER AND A FILLING LAYER HAVING A REFRACTIVE INDEX OF ABOUT 1.3 TO ABOUT 1.6 DISPOSED ON THE ANTI-REFLECTION LAYER | Non-Final OA | Samsung Display Co., Ltd. |
| 18174830 | SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 17978079 | SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION STRUCTURE WITH PARALLEL PN STRUCTURE IN DRIFT LAYER | Final Rejection | FUJI ELECTRIC CO., LTD. |
| 18227969 | POWER DEVICES WITH IMPROVED ON-RESISTANCE | Non-Final OA | Purdue Research Foundation |
| 18225840 | SEMICONDUCTOR DEVICE COMPRISING A SOURCE OR DRAIN OF AN OXIDE SEMICONDUCTOR CHANNEL TRANSISTOR HAVING AN OFF-STATE CURRENT OF 10-13 A OR LESS CONNECTED TO GATE ELECTRODE OF A SILICON CHANNEL TRANSISTOR | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 17820380 | SUPERCONDUCTING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT PROCESSING | Non-Final OA | International Business Machines Corporation |
| 17559296 | A SEMICONDUCTOR DEVICE HAVING A DIFFUSION BREAK STRUCTURE WITH A FIRST WIDTH LESS THAN A WIDTH OF GATE TERMINAL | Non-Final OA | International Business Machines Corporation |
| 18881996 | POWER SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE COVERS AT MOST A PORTION OF THE DRIFT REGION | Final Rejection | Hitachi Energy Ltd |
| 17889971 | A VERTICAL SEMICONDUCTOR DEVICE HAVING A RESURF REGION CONNECTING THE GUARD RINGS REGION AND BASE REGION | Non-Final OA | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18447340 | TRANSFER FIN FIELD EFFECT TRANSISTOR (finFET) OF A PIXEL SENSOR HAVING A PLURALITY OF CHANNEL FINS COUPLING THE N-TYPE REGION OF A PHOTODIODE TO AN EXTENSION REGION OF FLOATING DIFFUSION (FD) | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17823508 | EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17862422 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17303524 | METHOD FOR FORMING DEEP TRENCH ISOLATION IN AN IMAGING SENSOR BY SEPARATELY FORMING FIRST SET OF DEEP TRENCHES IN FIRST DIRECTION THEN FORMING SECOND SET OF DEEP TRENCHES IN SECOND DIRECTION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 16585859 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18952927 | TRENCHED SCHOTTKY STRUCTURE HAVING A DOPED REGION LOCATED AT A CENTRAL POSITION BETWEEN FIRST TRENCH AND SECOND TRENCH STRUCTURES | Final Rejection | Diodes Incorporated |
| 18737883 | Manufacturing Method for a Power MOSFET with a p-n-p-n-p Gate-Source ESD Diode Structure Formed Over A Breakdown Voltage Enhancement and Leakage Prevention Structure Comprising a Reduced Surface Field (RESURF) Structure and a Body Ring Structure | Non-Final OA | Diodes Incorporated |
| 17757822 | METHOD FOR MANUFACTURING A FULLY-DEPLETED SEMICONDUCTOR-ON-INSULATOR (FD_SOI) STRUCTURE INCLUDING HEAT-TREATING AN SOI SUBSTATE HAVING A P-TYPE MONOCRYSTALLINE SEMICONDUCTOR LAYER TO FORM A P-N JUNCTION BY DIFFUSION OF DOPANTS | Non-Final OA | Soitec |
| 17878208 | METHOD FOR STABILIZING BREAKDOWN VOLTAGES OF FLOATING GUARD RING | Final Rejection | National Yang Ming Chiao Tung University |
| 18191296 | LDMOS SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | DB HiTek Co., Ltd. |
| 17529231 | METHOD OF FORMING POWER SEMICONDUCTOR DEVICE COMPRISING FORMING AN ISOLATION TRENCH STRUCTURE IN THE TERMINATION REGION | Non-Final OA | PANJIT INTERNATIONAL INC. |
| 18224110 | SEMICONDUCTOR DEVICE HAVING SEGMENTED RESURF REGION ENTIRELY COVERING SUPER JUNCTION P-N PILLARS | Final Rejection | Power Master Semiconductor Co., Ltd. |
| 17642811 | A SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING A TRENCH FORMED IN A SUBSTRATE WITH A FIRST ANGLE FORMED BY FISRT SIDEWALL AND TOP SURFACE BEING LESS THAN A SECOND ANGLE FORMED BY SECOND SIDEWALL AND TOP SURFACE | Final Rejection | TOYO TANSO CO., LTD |
| 18264045 | MOSFET DEVICE HAVING A DEEP WELL OF FIRST CONDUCTIVE TYPE FORMED UNDER A BASE REGION OF FIRST CONDUCTIVE TYPE IN A SILICON CARBIDE SUBSTRATE AND A METHOD THEREFOR | Non-Final OA | YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP |
| 17986977 | SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF | Non-Final OA | Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd. |
| 17828462 | METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING FORMING GATE OXIDE SURROUNDING GATE ELECTRODE IN A THROUGH HOLE | Non-Final OA | Beijing Superstring Academy of Memory Technology |
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