Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2800 2814 2829 2889 2893
This examiner grants 38% of resolved cases
Anh D. Mai, working in Tech Center 2800 and Art Unit 2800, has handled 708 resolved cases. The allowance rate is 37.7%. Applicants can prepare for a prosecution cycle where the median days to allowance is 1339.
The data indicates an interview lift of 9.8%, which offers a strategic path for addressing rejections. Given the 708 resolved cases, this lift is a factor to consider when planning responses. The 37.7% allowance rate and 1339-day timeline suggest that persistence and direct communication are components of a strategy with this examiner. In this specific art unit, the data provided by these resolved cases provides a basis for understanding the examiner's tendencies. The 9.8% interview lift shows that interviews provide a measurable advantage relative to the baseline. Practitioners should factor these 708 resolved cases into their overall strategy for Tech Center 2800.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18329784 | SEMICONDUCTOR DEVICE HAVING CONTACT PLUG WITH AN UPPER CONDUCTIVE PATTERN FORMED ON AN UPPER SURFACE OF A LOWER CONDUCTIVE PATTERN | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18237044 | DISPLAY APPARATUS | Non-Final OA | SAMSUNG DISPLAY CO., LTD. |
| 18139884 | FLEXIBLE WIRING BOARD HAVING SIGNAL LINE FORMED BETWEEN TWO INORGANIC LAYERS AND COVERED BY ORGANIC LAYERS OVER THE INORGANIC LAYERS | Non-Final OA | Samsung Display Co., Ltd. |
| 17715700 | DISPLAY APPARATUS INCLUDING AN OXIDE-SEMICONDUCTOR THIN FILM TRANSISTOR FORMED ON A SUBSTRATE HAVING A GATE ELECTRODE OF TWO DIFFERENT MATERIALS STACKED | Non-Final OA | Samsung Display Co., Ltd. |
| 18238714 | DISPLAY DEVICE | Final Rejection | LG Display Co., Ltd. |
| 18593833 | A SEMICONDUCTOR DEVICE HAVING SEPARATION REGION CONTACTING GUARD RING REGION AND DEEP SEMICONDUCTOR REGION PARTITIONING A DEVICE PART INTO A PLURALITY OF DEVICE REGIONS AND THE SEPARATION REGION HAVING A WIDTH LESS THAN A WIDTH OF GUARD RING REGION | Final Rejection | Toshiba Electronic Devices & Storage Corporation |
| 18366441 | LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INTEGRATION IN INTEGRATED CIRCUIT (IC) PLATFORM | Final Rejection | QUALCOMM Incorporated |
| 18577717 | SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC EQUIPMENT | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 17820380 | SUPERCONDUCTING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT PROCESSING | Non-Final OA | International Business Machines Corporation |
| 17559296 | A SEMICONDUCTOR DEVICE HAVING A DIFFUSION BREAK STRUCTURE WITH A FIRST WIDTH LESS THAN A WIDTH OF GATE TERMINAL | Non-Final OA | International Business Machines Corporation |
| 18881996 | POWER SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE COVERS AT MOST A PORTION OF THE DRIFT REGION | Non-Final OA | Hitachi Energy Ltd |
| 18361880 | SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE | Non-Final OA | Texas Instruments Incorporated |
| 18344769 | SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER | Non-Final OA | Texas Instruments Incorporated |
| 18446919 | FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF P-TYPE DEEP LAYERS AND PLURALITY OF N-TYPE DEEP LAYERS LATERALLY AND ALTERNATIVELY FORMED UNDER P-TYPE BODY LAYER EXTENDING IN A SECOND DIRECTION PERPENDICULAR TO THE DIRECTION OF THE TRENCH | Non-Final OA | DENSO CORPORATION |
| 18401948 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17823508 | EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17862422 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17303524 | METHOD FOR FORMING DEEP TRENCH ISOLATION IN AN IMAGING SENSOR BY SEPARATELY FORMING FIRST SET OF DEEP TRENCHES IN FIRST DIRECTION THEN FORMING SECOND SET OF DEEP TRENCHES IN SECOND DIRECTION | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18781476 | SEMICONDUCTOR DEVICE WITH INTEGRATED METAL-INSULATOR-METAL CAPACITORS | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 16585859 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18226988 | PRINTED CIRCUIT BOARD | Non-Final OA | SAMSUNG ELECTRO-MECHANICS CO., LTD. |
| 18802243 | A TRENCH-TYPE POWER SEMICONDUCTOR DEVICE HAVING P-TYPE REGIONS AND N-TYPE REGIONS ALTERNATIVELY FORMED UNDER AND CONTACTING THE BOTTOM OF TRENCH GATE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18610017 | SEMICONDUCTOR DEVICE HAVING DEVICE ELEMENT STRUCTURES WITH PN JUNCTION FORMED IN ACTIVE REGION AND VOLTAGE WITHSTANDING RINGS FORMED IN PERIPHERY REGION SURROUNDING THE ACTIVE REGION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18176130 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE | Final Rejection | FUJI ELECTRIC CO., LTD. |
| 18174830 | SILICON CARBIDE SEMICONDUCTOR DEVICE | Final Rejection | FUJI ELECTRIC CO., LTD. |
| 17884528 | MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
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