Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2800 2814 2829 2889 2893
This examiner grants 38% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18234596 | SEMICONDUCTOR DEVICE | Final Rejection | Samsung Electronics Co., Ltd. |
| 17909530 | DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE | Final Rejection | BOE Technology Group Co., Ltd. |
| 18238714 | DISPLAY DEVICE | Final Rejection | LG Display Co., Ltd. |
| 18593833 | A SEMICONDUCTOR DEVICE HAVING SEPARATION REGION CONTACTING GUARD RING REGION AND DEEP SEMICONDUCTOR REGION PARTITIONING A DEVICE PART INTO A PLURALITY OF DEVICE REGIONS AND THE SEPARATION REGION HAVING A WIDTH LESS THAN A WIDTH OF GUARD RING REGION | Final Rejection | Toshiba Electronic Devices & Storage Corporation |
| 17889971 | A VERTICAL SEMICONDUCTOR DEVICE HAVING A RESURF REGION CONNECTING THE GUARD RINGS REGION AND BASE REGION | Non-Final OA | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 17353248 | SIGNAL ISOLATION APPARATUS OF A PMOS UTILIZING TWO ISOLATION RINGS OF LOW DOPING DENSITY PARTIALLY SURROUND AN N-WELL AND A METHOD FOR FORMING THE SAME | Non-Final OA | Huawei Technologies Co., Ltd. |
| 18139884 | FLEXIBLE WIRING BOARD HAVING SIGNAL LINE FORMED BETWEEN TWO INORGANIC LAYERS AND COVERED BY ORGANIC LAYERS OVER THE INORGANIC LAYERS | Non-Final OA | Samsung Display Co., Ltd. |
| 18361880 | SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE | Non-Final OA | Texas Instruments Incorporated |
| 18344769 | SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER | Non-Final OA | Texas Instruments Incorporated |
| 17823508 | EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17838303 | FIN FIELD EFFECT TRANSSITOR (FinFET) STRUCTURE HAVING ISOLATION STRUCTURE INTERUPTING CONTINUITY OF SEMICONDUCTO FINS INTO SEGMENTED PORTIONS | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17717731 | METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING A LOWER CONDUCTIVE LAYER OF A MULTI-LAYERED STRUCTURE BEING PLASMA TREATED BEFORE FORMING A SECOND CONDUCTIVE LAYER | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17711885 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A GATE MASK COMPOSING OF A SEMICONDUCTOR LAYER OVER A DIELECTRIC LAYER FORMED ON GATE ELECTRODE | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17820380 | SUPERCONDUCTING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT PROCESSING | Final Rejection | International Business Machines Corporation |
| 17559296 | A SEMICONDUCTOR DEVICE HAVING A DIFFUSION BREAK STRUCTURE WITH A FIRST WIDTH LESS THAN A WIDTH OF GATE TERMINAL | Final Rejection | International Business Machines Corporation |
| 18182780 | SEMICONDUCTOR DEVICE HAVING CONTACT STRUCTURES FORMED IN THREE DIFFERENT INSULATING FILMS WITH DIFFERENT DIELECTRIC CONSTANT OR DIFFERENT YOUNG'S MODULUS FROM ONE ANOTHER | Non-Final OA | RENESAS ELECTRONICS CORPORATION |
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