Tech Center 2800 • Art Units: 2800 2814 2829 2889 2893
This examiner grants 37% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18234596 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18329784 | SEMICONDUCTOR DEVICE HAVING CONTACT PLUG WITH AN UPPER CONDUCTIVE PATTERN FORMED ON AN UPPER SURFACE OF A LOWER CONDUCTIVE PATTERN | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18238714 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18446919 | FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF P-TYPE DEEP LAYERS AND PLURALITY OF N-TYPE DEEP LAYERS LATERALLY AND ALTERNATIVELY FORMED UNDER P-TYPE BODY LAYER EXTENDING IN A SECOND DIRECTION PERPENDICULAR TO THE DIRECTION OF THE TRENCH | Final Rejection | DENSO CORPORATION |
| 18139884 | FLEXIBLE WIRING BOARD HAVING SIGNAL LINE FORMED BETWEEN TWO INORGANIC LAYERS AND COVERED BY ORGANIC LAYERS OVER THE INORGANIC LAYERS | Final Rejection | Samsung Display Co., Ltd. |
| 17717493 | DISPLAY DEVICE HAVING A CAPPING LAYER WITH A THICKNESS OF ABOUT 280 ANGSTROMS TO ABOUT 360 ANGSTROMS DISPOSED ON AN EMISSION ELEMENT AN ANTI-REFLECTION LAYER DISPOSED ON THE CAPPING LAYER AND A FILLING LAYER HAVING A REFRACTIVE INDEX OF ABOUT 1.3 TO ABOUT 1.6 DISPOSED ON THE ANTI-REFLECTION LAYER | Non-Final OA | Samsung Display Co., Ltd. |
| 16779375 | AN ORGANIC LIGHT EMITTING DISPLAY APPARATUS HAVING A METAL MIRROR PATTERN AND A CAMERA | Non-Final OA | Samsung Display Co., Ltd. |
| 18174830 | SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 17978079 | SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION STRUCTURE WITH PARALLEL PN STRUCTURE IN DRIFT LAYER | Final Rejection | FUJI ELECTRIC CO., LTD. |
| 18225840 | SEMICONDUCTOR DEVICE COMPRISING A SOURCE OR DRAIN OF AN OXIDE SEMICONDUCTOR CHANNEL TRANSISTOR HAVING AN OFF-STATE CURRENT OF 10-13 A OR LESS CONNECTED TO GATE ELECTRODE OF A SILICON CHANNEL TRANSISTOR | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 17820380 | SUPERCONDUCTING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT PROCESSING | Non-Final OA | International Business Machines Corporation |
| 17559296 | A SEMICONDUCTOR DEVICE HAVING A DIFFUSION BREAK STRUCTURE WITH A FIRST WIDTH LESS THAN A WIDTH OF GATE TERMINAL | Final Rejection | International Business Machines Corporation |
| 18782714 | METHOD FOR FORMING A MAMR STRUCTURE BASED ON A TMR - SPIN TORQUE OSCILLATOR (STO) HAVING SEED LAYER AND CAPPING LAYER OF METAL OXIDE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17823508 | EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17862422 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17838303 | FIN FIELD EFFECT TRANSSITOR (FinFET) STRUCTURE HAVING ISOLATION STRUCTURE INTERUPTING CONTINUITY OF SEMICONDUCTO FINS INTO SEGMENTED PORTIONS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17473427 | GATE-ALL-AROUND SEMICONDUCTOR DEVICES HAVING A FIRST SEMICONDUCTOR DEVICE WITH MORE SEMICONDUCTOR BODIES THAN A SECOND SEMICONDUCTOR DEVICE | Non-Final OA | Intel Corporation |
| 17295432 | PRESSURE SENSOR DEVICE HAVING AT LEAST ONE INTERMEDIATE CARRIER FORMED UNDER A DIAPHRAGM IN A MOVABLE REGION | Non-Final OA | Robert Bosch GmbH |
| 18881996 | POWER SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE COVERS AT MOST A PORTION OF THE DRIFT REGION | Non-Final OA | Hitachi Energy Ltd |
| 17889971 | A VERTICAL SEMICONDUCTOR DEVICE HAVING A RESURF REGION CONNECTING THE GUARD RINGS REGION AND BASE REGION | Non-Final OA | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18786966 | METHOD OF FORMING A 3D STACKED CHIP INCLUDING FORMING A FIRST DIE ON ONE SIDE OF A THROUGH-SUBSTRATE VIA (TSV) AND FORMING A SECOND DIE ON OPPOSITE SIDE OF THE TSV AFTER THINNING OF THE SUBSTRATE TO EXPOSE THE TSV | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17717731 | METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING A LOWER CONDUCTIVE LAYER OF A MULTI-LAYERED STRUCTURE BEING PLASMA TREATED BEFORE FORMING A SECOND CONDUCTIVE LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 16585859 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
| 18737883 | Manufacturing Method for a Power MOSFET with a p-n-p-n-p Gate-Source ESD Diode Structure Formed Over A Breakdown Voltage Enhancement and Leakage Prevention Structure Comprising a Reduced Surface Field (RESURF) Structure and a Body Ring Structure | Non-Final OA | Diodes Incorporated |
| 17757822 | METHOD FOR MANUFACTURING A FULLY-DEPLETED SEMICONDUCTOR-ON-INSULATOR (FD_SOI) STRUCTURE INCLUDING HEAT-TREATING AN SOI SUBSTATE HAVING A P-TYPE MONOCRYSTALLINE SEMICONDUCTOR LAYER TO FORM A P-N JUNCTION BY DIFFUSION OF DOPANTS | Non-Final OA | Soitec |
| 17529231 | METHOD OF FORMING POWER SEMICONDUCTOR DEVICE COMPRISING FORMING AN ISOLATION TRENCH STRUCTURE IN THE TERMINATION REGION | Non-Final OA | PANJIT INTERNATIONAL INC. |
| 18224110 | SEMICONDUCTOR DEVICE HAVING SEGMENTED RESURF REGION ENTIRELY COVERING SUPER JUNCTION P-N PILLARS | Final Rejection | Power Master Semiconductor Co., Ltd. |
| 17642811 | A SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING A TRENCH FORMED IN A SUBSTRATE WITH A FIRST ANGLE FORMED BY FISRT SIDEWALL AND TOP SURFACE BEING LESS THAN A SECOND ANGLE FORMED BY SECOND SIDEWALL AND TOP SURFACE | Final Rejection | TOYO TANSO CO., LTD |
| 17986977 | SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF | Non-Final OA | Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd. |
| 18264045 | MOSFET DEVICE HAVING A DEEP WELL OF FIRST CONDUCTIVE TYPE FORMED UNDER A BASE REGION OF FIRST CONDUCTIVE TYPE IN A SILICON CARBIDE SUBSTRATE AND A METHOD THEREFOR | Non-Final OA | YUEZHOU SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORP |
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