SPLIT-GATE MOSFET AND MANUFACTURING METHOD THEREOF

IMAGE SENSOR HAVING AN ACTIVE PATTERN OF METAL OXIDE SEMICONDUCTOR DOPED WITH NITROGEN DISPOSED ON A HYDROGEN BLOCKING LAYER

DISPLAY DEVICE HAVING A SEMICONDUCTOR LAYER INCLUDING A THIRD PORTION EXTENDING IN A THIRD DRECTION DIRECTLY CONNECTING TO A FIRST PORTION AND A SECOND PORTION THAT EXTENDING IN DIFFERENT DIRECTIONS

A METHOD OF MANUFACTURING AN ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING FORMING THE PIXEL DEFINER BY MELTING THE PIXEL DEFINER MATERIAL LAYER PATTERNED ON THE PIXEL ELECTRODE PATTERN

VDMOS HAVING AN EDGE TERMINATION REGION WITH DOPING CONCENTRATION DECREASING FROM INNER REGION TOWARD THE EDGE

METHODS USED IN FORMING A MEMORY ARRAY COMPRISING STRINGS OF MEMORY CELLS INCLUDING SELECTIVELY ETCHING SACRIFICIAL MATERIAL IN A MEMORY-CELL REGION SELECTIVELY RELATIVE TO INSULATING, INSULATOR AND/OR INSULATIVE MATERIAL(S) TO FORM VOID SPACES BETWEEN CONDUCTIVE TIERS