Prosecution Insights
Last updated: April 19, 2026
Application No. 17/988,285

INTEGRATED RESISTOR

Non-Final OA §103
Filed
Nov 16, 2022
Examiner
VALENZUELA, PATRICIA D
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Microchip Technology Inc.
OA Round
1 (Non-Final)
90%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
92%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allow Rate
645 granted / 715 resolved
+22.2% vs TC avg
Minimal +2% lift
Without
With
+2.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
63 currently pending
Career history
778
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
60.1%
+20.1% vs TC avg
§102
19.9%
-20.1% vs TC avg
§112
8.6%
-31.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 715 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election of claims 1-15, 21-25 in the reply filed on 09/09/2025 is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1-15, 21-25 is/are rejected under 35 U.S.C. 103 as being unpatentable over Woo(USPGPUB DOCUMENT: 2018/0254271, hereinafter Woo) in view of Hoentschel (USPGPUB DOCUMENT: 2014/0319620, hereinafter Hoentschel). Re claim 1 Woo discloses in Fig 5/6 an integrated resistor, comprising: a resistor tub(30/18/12), the resistor tub(30/18/12) including a laterally- extending tub base(laterally-extending base of 30/18/12) and vertically-extending tub sidewalls(vertically-extending sidewalls of 30/18/12) extending upwardly from the laterally- extending tub base(laterally-extending base of 30/18/12), wherein the laterally-extending tub base and vertically-extending tub sidewalls(vertically-extending sidewalls of 30/18/12) define a resistor tub interior opening(opening of 30/18/12); a dielectric liner(51r/33r)[0046] formed in the resistor tub interior opening(opening of 30/18/12); and a resistive element(54r/57rb) formed over the dielectric liner(51r/33r)[0046] in the resistor tub interior opening(opening of 30/18/12), the resistive element(54r/57rb) including a pair of resistor heads(54r) connected by a laterally-extending resistor body(57rb), wherein the dielectric liner(51r/33r)[0046] electrically insulates the resistive element(54r/57rb) from the resistor tub(30/18/12). Woo does not disclose a resistor tub(30/18/12) formed from a conformal metal; Hoentschel discloses in Fig 11 a resistor tub(138)[0035,0036 of Hoentschel] formed from a conformal metal; It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Hoentschel to the teachings of Woo in order to enhance signal processing performance [0002, Hoentschel]. Re claim 2 Woo and Hoentschel disclose the integrated resistor of Claim 1, wherein the laterally-extending resistor body(57rb) has a vertical thickness[0139] of at least 0.5 pm. Re claim 3 Woo and Hoentschel disclose the integrated resistor of Claim 1, wherein the resistive element(54r/57rb) has a dog-bone shape. Re claim 4 Woo and Hoentschel disclose the integrated resistor of Claim 1, wherein the conformal metal[0135,0136 of Hoentschel] comprises tungsten. Re claim 5 Woo and Hoentschel disclose the integrated resistor of Claim 1, wherein the resistive element(54r/57rb) comprises nickel chromium, tantalum nitride, silicon chromium, silicon carbide chrome, or titanium nitride[0119]. Re claim 6 Woo and Hoentschel disclose the integrated resistor of Claim 1, comprising a pair of resistor head connection elements(see Fig 5) formed in a metal interconnect layer[0127,0128] and conductively connected to the pair of resistor heads(54r). Re claim 7 Woo and Hoentschel disclose the integrated resistor of Claim 1, wherein the integrated resistor is formed between a shallow trench insulation (STI) field oxide region(6s) and a metal interconnect layer[0127,0128]. Re claim 8 Woo and Hoentschel disclose the integrated resistor of Claim 1, wherein the integrated resistor is formed between a polysilicon layer[0031] and a metal interconnect layer[0127,0128]. Re claim 9 Woo and Hoentschel disclose the integrated resistor of Claim 1, wherein the integrated resistor is formed between two metal interconnect layer[0127,0128]s. Re claim 10 Woo discloses in Fig 5/6 an integrated circuit (IC) device, comprising: an IC structure including a vertically-extending contact(78/79) comprising a first portion of a conformal metal layer[0119]; and an integrated resistor comprising: a resistor tub(30/18/12), the resistor tub(30/18/12) including a laterally-extending tub base and vertically-extending tub sidewalls(vertically-extending sidewalls of 30/18/12) extending upwardly from the laterally-extending tub base, wherein the laterally-extending tub base and vertically-extending tub sidewalls(vertically-extending sidewalls of 30/18/12) define a resistor tub interior opening(opening of 30/18/12);a dielectric liner(51r/33r)[0046] formed in the resistor tub interior opening(opening of 30/18/12); anda resistive element(54r/57rb) formed over the dielectric liner(51r/33r)[0046] in the resistor tub interior opening(opening of 30/18/12), the resistive element(54r/57rb) including a pair of resistor heads(54r) connected by a laterally-extending resistor body(57rb),wherein the dielectric liner(51r/33r)[0046] electrically insulates the resistive element(54r/57rb) from the resistor tub(30/18/12). Woo does not disclose a resistor tub(30/18/12) comprising a second portion of the conformal metal layer Hoentschel discloses in Fig 11 a resistor tub(138)[0035,0036 of Hoentschel][0035] comprising a second portion of the conformal metal layer It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Hoentschel to the teachings of Woo in order to enhance signal processing performance [0002, Hoentschel]. Re claim 11 Woo and Hoentschel disclose the IC device of Claim 10, wherein the IC structure comprises a transistor[0041] structure and the vertically-extending contact(78/79) comprises a transistor[0041] gate contact. Re claim 12 Woo and Hoentschel disclose the IC device of Claim 10, wherein the IC structure comprises an interconnect structure[0127,0128] and the vertically-extending contact(78/79) comprises an interconnect via. Re claim 13 Woo and Hoentschel disclose the IC device of Claim 10, wherein:the vertically-extending contact(78/79) has a lateral width in the range of 0.1-0.5 pm[0108]; and the laterally-extending resistor body(57rb) of the resistive element(54r/57rb) has a lateral width in the range of 1-100 pm and a vertical thickness of at least 0.5 pm[0108,0139]. Re claim 14 Woo and Hoentschel disclose the IC device of Claim 10, wherein:the conformal metal[0135,0136 of Hoentschel] layer comprises tungsten; and the resistive element(54r/57rb) comprises nickel chromium, tantalum nitride, silicon chromium, silicon carbide chrome, or titanium nitride[0119]. Re claim 15 Woo and Hoentschel disclose the IC device of Claim 10, comprising (a) a pair of resistor head connection elements(see Fig 5) and (b) an IC device connection element, formed in a common metal layer; wherein the pair of resistor head connection elements(see Fig 5) are conductively connected to the pair of resistor heads(54r); and wherein the IC device connection element is conductively connected to the vertically- extending contact(see Fig 6). Re claim 21 Woo discloses in Fig 5/6 an integrated resistor, comprising: a dog-bone shaped resistor tub(30/18/12); a dog-bone shaped dielectric liner(51r/33r)[0046] formed in the opening defined by the dog-bone shaped resistor tub(30/18/12); and a dog-bone shaped resistive element(54r/57rb) formed over the dielectric liner(51r/33r)[0046] in the opening defined by the dog-bone shaped resistor tub(30/18/12), the dog-bone shaped resistive element(54r/57rb) including a pair of resistor heads(54r) connected by a laterally-extending resistor body(57rb); wherein the dielectric liner(51r/33r)[0046] electrically insulates the dog-bone shaped resistive element(54r/57rb) from the dog-bone shaped resistor tub(30/18/12). Woo does not disclose a resistor tub(30/18/12) formed from a conformal metal; Hoentschel discloses in Fig 11 a resistor tub(138)[0035,0036 of Hoentschel] formed from a conformal metal[0035]; It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Hoentschel to the teachings of Woo in order to enhance signal processing performance [0002, Hoentschel]. Re claim 22 Woo and Hoentschel disclose the integrated resistor of Claim 21, wherein an upper surface of the dog- bone shaped resistor tub(30/18/12) and an upper surface of the dog-bone shaped resistive element(54r/57rb) are coplanar(see Fig 6). Re claim 23 Woo and Hoentschel disclose the integrated resistor of Claim 21, wherein the dog-bone shaped resistor tub(30/18/12) includes a laterally-extending tub base(laterally-extending base of 30/18/12) and vertically-extending tub sidewalls(vertically-extending sidewalls of 30/18/12) extending upwardly from the laterally-extending tub base. Re claim 24 Woo and Hoentschel disclose the integrated resistor of Claim 21, wherein the integrated resistor is formed between a polysilicon layer[0031] and a metal interconnect layer[0127,0128]. Re claim 25 Woo and Hoentschel disclose the integrated resistor of Claim 21, wherein the integrated resistor is formed between two metal interconnect layer[0127,0128]s. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to PATRICIA D VALENZUELA whose telephone number is (571)272-9242. The examiner can normally be reached Monday-Friday 10am-6pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Partridge can be reached at 571-270-1402. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /PATRICIA D VALENZUELA/Primary Examiner, Art Unit 2812
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Prosecution Timeline

Nov 16, 2022
Application Filed
Dec 13, 2025
Non-Final Rejection — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
90%
Grant Probability
92%
With Interview (+2.1%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 715 resolved cases by this examiner. Grant probability derived from career allow rate.

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