Office Action Predictor
Last updated: April 15, 2026
Application No. 18/036,051

SEMICONDUCTOR LIGHT-EMITTING DEVICE

Non-Final OA §102
Filed
May 09, 2023
Examiner
MEHTA, RATISHA
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Sl Energy Co., LTD.
OA Round
1 (Non-Final)
89%
Grant Probability
Favorable
1-2
OA Rounds
1y 11m
To Grant
96%
With Interview

Examiner Intelligence

Grants 89% — above average
89%
Career Allow Rate
559 granted / 625 resolved
+21.4% vs TC avg
Moderate +6% lift
Without
With
+6.3%
Interview Lift
resolved cases with interview
Fast prosecutor
1y 11m
Avg Prosecution
24 currently pending
Career history
649
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
45.0%
+5.0% vs TC avg
§102
29.5%
-10.5% vs TC avg
§112
12.2%
-27.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 625 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on 5/9/2023 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-3 are rejected under 35 U.S.C. 102 (a)(1) as being anticipated by Seo et al (US 2012/0074441; hereinafter Seo). Regarding claim 1, Fig 26 of Seo discloses a semiconductor light emitting device, comprising: a first array of light emitting units (130 (left)/S1; Fig 26; ¶ [0098]) comprising a first light emitting unit (130; Fig 26; ¶ [0098]) and a second light emitting unit (130; Fig 26; ¶ [0098]) spaced apart from each other on a substrate (121; Fig 26; ¶ [0098]); a second array of light emitting units (130 (right)/S2; Fig 26; ¶ [0098]) comprising a third light emitting unit (130; Fig 26; ¶ [0098]) and a fourth light emitting unit (130; Fig 26; ¶ [0098]) spaced apart from each other on the substrate (121; Fig 26; ¶ [0098]); a first pad electrode (139b; Fig 26; ¶ [0098]) electrically connected to the first light emitting unit (130; Fig 26; ¶ [0098]); a second pad electrode (139a; Fig 26; ¶ [0098]) electrically connected to the fourth light emitting unit; a first upper electrode (145b/145c; Fig 26; ¶ [0098]) provided above and electrically connected to the first pad electrode (139b; Fig 26; ¶ [0098]); and a second upper electrode (145a; Fig 26; ¶ [0098]) provided above and electrically connected to the second pad electrode, wherein, each of the first to fourth light emitting units includes a first semiconductor layer (129; Fig 26; ¶ [0099]) having a first conductivity (¶ [0099]), a second semiconductor layer (125; Fig 26; ¶ [0099]) having a second conductivity (¶ [0099]) different from the first conductivity (¶ [0099]), and an active layer (127; Fig 26; ¶ [0099]) interposed between the first semiconductor layer (129; Fig 26; ¶ [0099]) and the second semiconductor layer (125; Fig 26; ¶ [0099]) for generating light by recombination of electrons and holes (¶ [0099]), the first to fourth light emitting units (130; Fig 26; ¶ [0098]) are electrically connected to one another (Fig 26), and the first pad electrode (139b; Fig 26; ¶ [0098]) is arranged to cover both the first (130; Fig 26; ¶ [0098]) and second light emitting units (130; Fig 26; ¶ [0098]; Pad electrode covers the second light emitting unit at least partially). Regarding claim 2, Fig 26 of Seo discloses the first upper electrode (145b/145c; Fig 26; ¶ [0098]) is disposed above the first pad electrode (139b; Fig 26; ¶ [0098]) in the upper portions of the respective first and second light emitting units (130; Fig 26; ¶ [0098]). Regarding claim 3, Fig 26 of Seo discloses the first upper electrode (145b/145c; Fig 26; ¶ [0098]) and the first pad electrode (139b; Fig 26; ¶ [0098]) are electrically connected by an electrode connection (131/135; Fig 26) formed in the upper portion of the each of the first and second light emitting units. Allowable Subject Matter Claims 4-8 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Regarding claim 4, the prior art of record, either singularly or in combination, does not disclose or suggest the combination of limitations including “the first lower connection electrically connects one end of the first horizontal connection to the second semiconductor layer of the first light emitting unit, and the second lower connection electrically connects the other end of the first horizontal connection to the first semiconductor layer of the second light emitting unit”. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure: Tu et al (US 9018655) Kim et al (US 2019/0157515) Any inquiry concerning this communication or earlier communications from the examiner should be directed to RATISHA MEHTA whose telephone number is (571)270-7473. The examiner can normally be reached Monday-Friday: 9:00am - 5:00 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Eliseo Ramos Feliciano can be reached at 571-272-7925. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /RATISHA MEHTA/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

May 09, 2023
Application Filed
Sep 23, 2025
Non-Final Rejection — §102
Apr 03, 2026
Response after Non-Final Action

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12595393
Curable Compositions for Forming Light Scattering Layers
2y 5m to grant Granted Apr 07, 2026
Patent 12593733
Vertical Light Emitting Diode Die Packaging Method
2y 5m to grant Granted Mar 31, 2026
Patent 12588335
LIGHT EMITTING DIODE FILAMENT INCLUDING FLIP CHIP LIGHT EMITTING DIODES TO REDUCE THE AMOUNT OF PHOSPHOR THAT IS INTEGRATED INTO THE FILAMENT
2y 5m to grant Granted Mar 24, 2026
Patent 12588444
METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE
2y 5m to grant Granted Mar 24, 2026
Patent 12577457
NANOPARTICLE INK COMPOSITION, LIGHT-EMITTING DEVICE, AND METHOD OF MANUFACTURING THE LIGHT-EMITTING DEVICE
2y 5m to grant Granted Mar 17, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

1-2
Expected OA Rounds
89%
Grant Probability
96%
With Interview (+6.3%)
1y 11m
Median Time to Grant
Low
PTA Risk
Based on 625 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in for Full Analysis

Enter your email to receive a magic link. No password needed.

Free tier: 3 strategy analyses per month