Prosecution Insights
Last updated: April 19, 2026
Application No. 18/059,473

SHAPE MEMORY POLYMER FOR USE IN SEMICONDUCTOR DEVICE FABRICATION

Non-Final OA §102§103
Filed
Nov 29, 2022
Examiner
VU, VU A
Art Unit
2897
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Texas Instruments Incorporated
OA Round
5 (Non-Final)
92%
Grant Probability
Favorable
5-6
OA Rounds
2y 0m
To Grant
99%
With Interview

Examiner Intelligence

Grants 92% — above average
92%
Career Allow Rate
1208 granted / 1309 resolved
+24.3% vs TC avg
Moderate +7% lift
Without
With
+6.6%
Interview Lift
resolved cases with interview
Fast prosecutor
2y 0m
Avg Prosecution
48 currently pending
Career history
1357
Total Applications
across all art units

Statute-Specific Performance

§101
0.6%
-39.4% vs TC avg
§103
44.5%
+4.5% vs TC avg
§102
34.4%
-5.6% vs TC avg
§112
12.5%
-27.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1309 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after allowance or after an Office action under Ex Parte Quayle, 25 USPQ 74, 453 O.G. 213 (Comm'r Pat. 1935). Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, prosecution in this application has been reopened pursuant to 37 CFR 1.114. Applicant's submission filed on January 27th, 2026 has been entered. Response to Amendment Acknowledgment is made that applicant's Amendment, filed on January 27th, 2026, has been entered. Upon entrance of the Amendment, claims 1-3, 7, 8, 14, 16, 17, and 19-25 were amended, claim 26 were added, and claim 15 were cancelled. Claims 1-3, 7-11, 13, 14, 16, 17, and 19-26 are currently pending. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1, 3, 7-11, 14, 16-17, 19, 22-24, and 26 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Chida (U.S. Patent No. 10,984,755). Regarding to claim 1, Hong teaches an integrated circuit, comprising: a substrate including a first substrate portion, a second substrate portion, and a third substrate portion (Figs. 16A-B, please see the attached figure with annotations); a first shape memory polymer portion is coupled between the first and second substrate portions (Figs. 16A-B, column 22, lines 15-17; Fig. 23, element 380; column 28, lines 35-42), wherein the first shape memory polymer portion is foldable to position the first and second substrate portions on different planes (Figs. 16B1-B2); and a second shape memory polymer portion coupled between the first and third substrate portions (Figs. 16A-B, column 22, lines 15-17; Fig. 23, element 380; column 28, lines 35-42), wherein the second shape memory polymer portion is foldable to position the first and third substrate portions on different planes (Figs. 16B1-B2); wherein the first substrate portion includes one or more contact pads formed thereon (Figs. 16B1-B2). PNG media_image1.png 807 934 media_image1.png Greyscale Regarding to claim 3, Hong teaches the first and second shape memory polymer portions have a flat original shape (Fig. 16A). Regarding to claim 7, Hong teaches a semiconductor die coupled to the one or more contact pads (Fig. 23). Regarding to claim 8, Hong teaches the first substrate portion includes a layer of polyimide and a conductive layer, the conductive layer being partially covered by the layer of the polyimide, and the one or more contact pads are at exposed portions of the conductive layer (Fig. 23, column 30, lines 18-19). Regarding to claim 9, Hong teaches the conductive layer is covered by the first and second polymer portions (Fig. 23, the conductive layer is covered by the first and second polymer portions 380). Regarding to claim 10, Hong teaches the conductive layer includes copper (column 24, lines 57-60). Regarding to claim 11, Hong teaches the layer of the polyimide includes at least one of: a thermoplastic material, or a thermosetting material (column 28, lines 33-34). Regarding to claim 14 Hong teaches a substrate including a first substrate portion, a second substrate portion, and a third substrate portion (Figs. 16A-B, please see the attached figure with annotations), a first polymer portion that is capable of changing between a first shape and a second shape upon being heated (Figs. 16A-B, column 22, lines 15-17; Fig. 23, element 380; column 28, lines 35-42, polymer is softer under heating), wherein the first polymer portion is coupled between the first and second substrate portions (Figs. 16B1-B2); and a second polymer portion capable of changing between the first shape and the second shape upon being heated (Figs. 16A-B, column 22, lines 15-17; Fig. 23, element 380; column 28, lines 35-42, polymer is softer under heating), wherein the second polymer portion is coupled between the first and third substrate portions (Figs. 16B1-B2), wherein the first substrate portion includes one or more contact pads formed thereon (Figs. 16B1-B2). Regarding to claim 16, Hong teaches the first shape is a flat shape (Fig. 16A), and the second shape is a bent shape (Fig. 16B); or the first shape is the bent shape (Fig. 16B), and the second shape is the flat shape (Fig. 16A). Regarding to claim 17, Hong teaches the first and second polymer portions include a shape memory polymer (Figs. 16A-B). Regarding to claim 19, Hong teaches the first shape is an original shape of the first and second polymer portions, and the first and second polymer portions are configurable to change from the second shape to the original shape responsive to at least one of: a temperature change, an electric field, or a magnetic field (polymer change its shape under heating). Regarding to claim 22, Hong teaches a mold compound on the substrate and encapsulating the semiconductor die (Fig. 23). Regarding to claim 23, Hong teaches a semiconductor die coupled to the one or more contact pads on the first substrate portion (Fig. 23); and a mold compound on the substrate and encapsulating the semiconductor die (Fig. 23). Regarding to claim 24, Hong teaches the first shape memory polymer portion at least partially covers the first and second substrate portions (Fig. 23). Regarding to claim 26, Hong teaches a fourth substrate portion including a contact pad; and a third shape memory polymer portion coupling the fourth substrate portion to the first substrate portion (Fig. 16A-B). PNG media_image2.png 482 1190 media_image2.png Greyscale Claims 20-21 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Choi et al. (U.S. Patent No. 7,923,793). Regarding to claim 20, Choi teaches a method of fabricating an integrated circuit, the method comprising: changing a substrate including a shape memory polymer from a first shape to a second bent shape (Fig. 2C, element 33, column 6, lines 49-51); mounting a semiconductor wafer on the substrate having the second bent shape (Fig. 2C, element 3, column 6, lines 13-17); and singulating the semiconductor wafer mounted on the substrate having the second into semiconductor dies (Fig. 2D-E, column 11, lines 41-45); Regarding to claim 21, Choi teaches at least one of: changing the substrate having the semiconductor dies mounted thereon from the bent shape to the first shape; singulating the substrate having the first shape into multiple substrates each having one or more semiconductor dies mounted thereon (Fig. 2E); or applying a mold compound on the one or more semiconductor dies. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim 2 is rejected under 35 U.S.C. 103 as being unpatentable over Chida (U.S. Patent No. 10,984,755), as applied to claim 1 above, in view of Chambion et al. (U.S. Patent No. 11,769,785). Regarding to claim 2, Chida does not explicitly disclose the first and second shape memory polymer portions comprise at least one of: polyethylene terephthalate (PET), polyurethanes, polyimides, polybenzoxazoles (PBO), polytetrafluoroethylene (PFTE), polylactide (PLA), or ethylene-vinyl acetate (EVA) (column 8, lines 13-18, polyimide). Chambion discloses the first and second shape memory polymer portions comprise at least one of: polyethylene terephthalate (PET), polyurethanes, polyimides, polybenzoxazoles (PBO), polytetrafluoroethylene (PFTE), polylactide (PLA), or ethylene-vinyl acetate (EVA) (Fig. 3h, element 3; column 8, lines 13-18, polyimide). It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to have modified Chida in view of Chambion to comprise at least one of: polyethylene terephthalate (PET), polyurethanes, polyimides, polybenzoxazoles (PBO), polytetrafluoroethylene (PFTE), polylactide (PLA), or ethylene-vinyl acetate (EVA), in the first and second shape memory polymer portions in order to increase flexibility. PNG media_image3.png 698 884 media_image3.png Greyscale Allowable Subject Matter Claims 13 and 25 is objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: Regarding to claim 13, the prior art fails to anticipate or render obvious the claimed limitations including “the substrate includes at least one of: diaminodiphenyl (ODA) - oxydiphthalic anhydride (ODPA), or diaminodiphenyl (ODA) - biphenyltetracarboxylic dianhydride (BPDA).” in combination with the limitations recited in claim 1. Regarding to claim 25, the prior art fails to anticipate or render obvious the claimed limitations including “the first shape memory polymer portion is foldable to position the second substrate portion perpendicular to the first substrate portion” in combination with the limitations recited in claim 1. Pertinent Art For the benefits of the Applicant, US-11763712-B2, US-10991738-B2, US-10943938-B2, US-10991621-B2US-11908832-B2, US-9799708-B2, cited on the record as being pertinent to significant disclosure through some but not all claimed features of the defined invention. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to VU A VU whose telephone number is (571)270-7467. The examiner can normally be reached M-F: 8:00AM - 5:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, CHAD M DICKE can be reached at (571) 270-7996. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /VU A VU/Primary Examiner, Art Unit 2897
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Prosecution Timeline

Nov 29, 2022
Application Filed
Nov 08, 2023
Non-Final Rejection — §102, §103
Feb 15, 2024
Response Filed
Feb 25, 2024
Final Rejection — §102, §103
May 29, 2024
Response after Non-Final Action
Jun 24, 2024
Response after Non-Final Action
Jun 28, 2024
Request for Continued Examination
Jul 02, 2024
Response after Non-Final Action
Aug 25, 2024
Non-Final Rejection — §102, §103
Nov 25, 2024
Response Filed
Mar 18, 2025
Request for Continued Examination
Mar 19, 2025
Response after Non-Final Action
Jun 16, 2025
Non-Final Rejection — §102, §103
Sep 18, 2025
Response Filed
Jan 27, 2026
Request for Continued Examination
Feb 03, 2026
Response after Non-Final Action
Feb 10, 2026
Non-Final Rejection — §102, §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

5-6
Expected OA Rounds
92%
Grant Probability
99%
With Interview (+6.6%)
2y 0m
Median Time to Grant
High
PTA Risk
Based on 1309 resolved cases by this examiner. Grant probability derived from career allow rate.

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