Tech Center 4100 • Art Units: 2800 2817 2823 2828 2893 2897 4100
This examiner grants 92% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18675463 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18620333 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18521965 | SEMICONDUCTOR CHIP HAVING A FRICTION STRUCTURE, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR PACKAGE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD |
| 18254848 | SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18709903 | DISPLAY DEVICE, DISPLAY PANEL AND METHOD FOR MANUFACTURING DISPLAY DEVICE | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18657500 | LIGHT EMITTING DISPLAY APPARATUS | Non-Final OA | LG Display Co., Ltd. |
| 18790855 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18646268 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18620407 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18620497 | DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE | Non-Final OA | Samsung Display Co., Ltd. |
| 18398732 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 17956760 | SIDE OF A DIE THAT IS COPLANAR WITH A SIDE OF A MOLDING | Non-Final OA | Intel Corporation |
| 18779147 | LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE | Non-Final OA | SHARP KABUSHIKI KAISHA |
| 18645288 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | SK hynix Inc. |
| 18544590 | THERMALLY CONDUCTIVE WAFER LAYER | Non-Final OA | Texas Instruments Incorporated |
| 18362635 | IC PACKAGE WITH IMMERSION TIN ON FLANK | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18781293 | SEMICONDUCTOR STRUCTURE HAVING DEEP METAL LINE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18659745 | SEMICONDUCTOR PACKAGE WITH HEAT SPREADING LID | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18785053 | Semiconductor Devices and Methods of Manufacture | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18606739 | FABRICATION OF HIGH ASPECT RATIO ELECTRONIC DEVICES WITH MINIMAL SIDEWALL SPACER LOSS | Non-Final OA | Applied Materials, Inc. |
| 18612553 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD | Non-Final OA | Kioxia Corporation |
| 18408761 | INTERCONNECT LINES WITH LINE WIDTH PROFILE | Final Rejection | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 17807873 | STEPPED SOURCE DRAIN CONTACT FOR GATE-ALL-AROUND TRANSISTOR | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18500504 | BARIUM TITANATE FILMS HAVING REDUCED INTERFACIAL STRAIN | Final Rejection | Psiquantum, Corp. |
| 18399742 | MEMS Microphone | Non-Final OA | AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD. |
| 18679754 | HIGH-ELECTRON-MOBILITY TRANSISTOR HAVING GROUP-III-NITRIDE CAPPING LAYER SEPARATED FROM CONTACT | Non-Final OA | MACOM Technology Solutions Holdings, Inc. |
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