CTNF 18/060,080 CTNF 100149 DETAILED ACTION/EXAMINER’S COMMENT This Office action responds to the amendments filed on 04/23/2026. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA. In the event the determination of the status of the application as subject to AIA is incorrect, any correction of the statutory basis ( i.e. , changing from AIA to pre-AIA) for a rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Amendment Status Applicant’s response filed on 04/23/2026 in reply to the final rejection mailed on 02/06/2026, has been entered. The present Office action is made with all previously suggested amendments being fully considered. Accordingly, pending in this Office action are claims 1-3, 7-9, 11, 13-17, & 20. Claim Rejections - 35 USC § 102 07-07-aia AIA 07-07 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – 07-12-aia AIA (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. 07-15-03-aia AIA Claim s 1, 2, 3, 7, 8, 9, 11, 13, 14, 15, 16, 17, & 20 are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Agarwal (US 20240178084) . Regarding Claim 1, Agarwal (see, e.g., fig. 1a) shows a microelectronic assembly, comprising: a core 103 (see, e.g., para.0061) having a surface 170-2 (see, e.g., fig. 1a) and made of bulk glass (see, e.g., para.0063) , the core including: a first region 105 (see, e.g., para.0061) within the bulk glass extending from the surface of the core to a first depth 195 (see, e.g., para.0061) the first region comprising a chemical element, wherein the chemical element includes nitrogen, hydrogen, helium, copper, nickel, gold, silver, titanium, oxygen, carbon, boron, phosphorus, arsenic, or argon, and combination thereof (see, e.g., para.0062) ; and a second region 107 & 109 (see, e.g., para.0061) within the bulk glass extending from the surface of the core to a second depth 197 (see, e.g., para.0061) , the second region comprising a first subregion 109 and a second subregion 107 , wherein: the first subregion 109 includes a first concentration of the chemical element, the second subregion 107 includes a second concentration of the chemical element the second concentration of is greater than the first concentration (see, e.g., para.0075) , and the second subregion between the first subregion and the surface of the core; a dielectric 148-2 (see, e.g., para.0064) with a conductive pathway 196 (of 148-2, see, e.g., para.0064) at the surface of the core; and a die 114-1 (see, e.g., para.0066) conductively coupled to the conductive pathway in the dielectric at the surface of the core by an interconnect 150 (see, e.g., para.0067) . Regarding Claim 2, Agarwal, shows the microelectronic assembly of claim 1, wherein the first depth 195 is between 2 nanometers and 50 micron (see, e.g., para.0061) . Regarding Claim 3, Agarwal, shows the microelectronic assembly of claim 1, wherein the second depth 197 is between 2 nanometers and 50 microns (see, e.g., para.0061) Regarding Claim 7, Agarwal, shows the microelectronic assembly of claim 1, wherein the core further includes a through-glass via (TGV) 110 (see, e.g., para.0065) , and wherein the surface of the core is a second surface 170-2 (same element, renamed second surface) and the core further includes a first surface 170-1 opposite the second surface, and the dielectric is a second dielectric 148-2 (same element, renamed second dielectric) having a second conductive pathway 196 (of 148-2, same element, renamed, see, e.g., para.0064) , and the microelectronic assembly further comprising: a first dielectric 148-1 (see, e.g., para.0064) with a first conductive pathway 196 (of 148-1, see, e.g., para.0064) at the first surface of the core, wherein the TGV is conductively coupled to the first and second conductive pathways (see, e.g., fig. 1a, para.0064) . Regarding Claim 8, Agarwal (see, e.g., fig. 1b) shows a microelectronic assembly, comprising: a core 103 (see, e.g., para.0061) made of bulk glass (see, e.g., para.0063) and having a first surface 170-1 and an opposing second surface 170-2 , the core including: a through-glass via (TGV) 110 (see, e.g., para.0065) ; a first region 105 within the bulk glass having a first concentration of ions extending from the respective first and second surfaces of the core to a depth 195 (see, e.g., para.0061) ; and a second region 107 & 109 within the bulk glass including a first subregion 109 having a second concentration of ions different than the first concentration of ions (see, e.g., para.0061) , and a second subregion 107 having the first concentration of ions (see, e.g., para.0061) , wherein the second subregion is between the first subregion and the respective first and second surfaces (see, e.g., fig. 1b) ; a first dielectric 127 (see, e.g., para.0070) with a first conductive pathway 146 & 190 (see, e.g., para.0045) at the first surface of the core 170-1 , wherein the first conductive pathway in the first dielectric is conductively coupled to the TGV 110 (see, e.g., fig. 1b) ; a second dielectric 108 (see, e.g., fig. 1c, para.0074) with a second conductive pathway 138 (see, e.g., para.0074) at the second surface of the core, wherein the second conductive pathway in the second dielectric is conductively coupled to the TGV (see, e.g., fig. 1b) ; and a die 114-1 (see, e.g., para.0066) conductively coupled to the second conductive pathway by an interconnect 139 (see, e.g., para.0074) . Regarding Claim 9, Agarwal shows the microelectronic assembly of claim 8, wherein the depth is between 2 nanometers and 50 microns (see, e.g., para.0061) . Regarding Claim 11, Agarwal shows the microelectronic assembly of claim 8, wherein the ions of the first and second regions include ions of sodium, potassium, or silver, and combinations thereof (see, e.g., para.0062) . Regarding Claim 13, Agarwal shows the microelectronic assembly of claim 8, further comprising: a circuit board 131 (see, e.g., para.0065, para.0071) conductively coupled to the first conductive pathway in the first dielectric at the first surface 170-1 of the core. Regarding Claim 14, Agarwal (see, e.g., fig. 1b) shows a microelectronic assembly, comprising: a core 103 (see, e.g., para.0061) made of bulk glass (see, e.g., para.0063) and having a first surface 170-1 and an opposing second surface 170-2 , the core including: a through-glass via (TGV) 110 (see, e.g., para.0065) ; a first region 105 within the bulk glass having a first concentration of ions extending from the respective first and second surfaces of the core to a depth 195 (see, e.g., para.0061) ; and a second region 107 & 109 within the bulk glass including a first subregion 109 having the first concentration of ions (see, e.g., para.0061) and a second subregion 107 having a second concentration of ions different than the first concentration of ions (see, e.g., para.0061) , wherein the second subregion between the first subregion and the respective first and second surfaces of the core (see, e.g., fig. 1b) ; a dielectric 108 (see, e.g., fig. 1c, para.0074) with a conductive pathway 138 (see, e.g., para.0074) at the second surface of the core, wherein the conductive pathway in the dielectric is conductively coupled to the TGV 110 (see, e.g., fig. 1b) ; and a die 114-1 (see, e.g., para.0066) conductively coupled to the conductive pathway by an interconnect 139 (see, e.g., para.0074) . Regarding Claim 15, Agarwal shows the microelectronic assembly of claim 14, wherein the second concentration of ions greater than the first concentration of ions (see, e.g., para.0061) . Regarding Claim 16, Agarwal shows the microelectronic assembly of claim 14, wherein the ions of the first and second regions include nitrogen, hydrogen, helium, copper, nickel, gold, silver, titanium, oxygen, carbon, boron, phosphorus, arsenic, gallium, or argon, and combinations thereof (see, e.g., para.0062) . Regarding Claim 17, Agarwal shows the microelectronic assembly of claim 14, wherein the depth is between 2 nanometers and 50 microns (see, e.g., para.0061) . Regarding Claim 20, Agarwal shows the microelectronic assembly of claim 14, further comprising: an insulating material 133 (see, e.g., para.0069) surrounding the die. Response to Arguments Applicant’s arguments filed 04/23/2026 with respect to claim(s) 1-3, 7-9, 11, 13-17, & 20 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to FERNANDO JOSE RAMOS-DIAZ whose telephone number is (571) 270-5855. The examiner can normally be reached Mon-Fri 8am-5pm. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Loke can be reached on 571-272-1657. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. 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If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /FERNANDO JOSE RAMOS-DIAZ/Examiner, Art Unit 2818 /STEVEN H LOKE/Supervisory Patent Examiner, Art Unit 2818 Application/Control Number: 18/060,080 (RCE Non-Final Rejection) Page 2 Art Unit: 2818 Application/Control Number: 18/060,080 (RCE Non-Final Rejection) Page 3 Art Unit: 2818 Application/Control Number: 18/060,080 (RCE Non-Final Rejection) Page 4 Art Unit: 2818 Application/Control Number: 18/060,080 (RCE Non-Final Rejection) Page 5 Art Unit: 2818 Application/Control Number: 18/060,080 (RCE Non-Final Rejection) Page 6 Art Unit: 2818 Application/Control Number: 18/060,080 (RCE Non-Final Rejection) Page 7 Art Unit: 2818
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