Prosecution Insights
Last updated: July 17, 2026
Application No. 18/075,502

INTEGRATED CIRCUIT LAYOUT AND INTEGRATED CIRCUIT LAYOUT METHOD FOR FILTER

Non-Final OA §103
Filed
Dec 06, 2022
Priority
Dec 14, 2021 — TW 110146660
Examiner
VALENZUELA, PATRICIA D
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Realtek Semiconductor Corporation
OA Round
2 (Non-Final)
90%
Grant Probability
Favorable
2-3
OA Rounds
0m
Est. Remaining
92%
With Interview

Examiner Intelligence

Grants 90% — above average
90%
Career Allowance Rate
647 granted / 717 resolved
+22.2% vs TC avg
Minimal +2% lift
Without
With
+2.1%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
63 currently pending
Career history
794
Total Applications
across all art units

Statute-Specific Performance

§101
0.3%
-39.7% vs TC avg
§103
86.7%
+46.7% vs TC avg
§102
4.8%
-35.2% vs TC avg
§112
1.8%
-38.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 717 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 9-16 is/are rejected under 35 U.S.C. 103 as being unpatentable over Park(USPGPUB DOCUMENT: 2022/0011487, hereinafter Park) in view of Tsaur (USPGPUB DOCUMENT: 2016/0056625, hereinafter Tsaur). Re claim 9 Park discloses an integrated circuit comprising: a target filter[0327] circuit, wherein the target filter[0327] circuit includes a capacitor(Cst) and a first optional component[0184], the first optional component being one of a first resistive circuit and a first transistor(T1/T2/T3) and being disposed in a first circuit region; a plurality of first wires(EL1/EL2/EL3) in a first metal layer(BML1/BML2/BML3), external nodes[0098] ; and a plurality of second wires(EL1/EL2/EL3) in a second metal layer(BML1/BML2/BML3) and disposed around the first circuit region, and the second metal layer(BML1/BML2/BML3) is above the first metal layer(BML1/BML2/BML3), wherein the capacitor(Cst) is disposed in the first circuit region and above the first optional component, the capacitor(Cst) has a first metal plate(Le3/UE3/LE2/UE2 of Cst) and a second metal plate(Le3/UE3/LE2/UE2 of Cst) that are disposed opposite to each other, and the first metal plate(Le3/UE3/LE2/UE2 of Cst) and the second metal plate(Le3/UE3/LE2/UE2 of Cst)s are respectively located in two of the second metal layer(BML1/BML2/BML3) and the at least one third metal layer(BML1/BML2/BML3) above the second metal layer(BML1/BML2/BML3). Park does not disclose a target filter[0327] circuit disposed at a predetermined position in a circuit layout; a plurality of first wires(EL1/EL2/EL3) in a first metal layer(BML1/BML2/BML3), for respectively and electrically coupling the first optional element to a plurality of first external nodes[0098] outside the first circuit region wherein the plurality of second wires(EL1/EL2/EL3) are for respectively and electrically coupling the first external nodes[0098], Tsaur disclose electrically coupling the first optional element(R1/R2/RN)[0015] to a plurality of first external nodes(first node/second node)[0015] outside the first circuit region(region of C1/C2/CM) wherein the plurality of second wires(102/104) are for respectively and electrically coupling the first external nodes[0015], It would have been obvious to one of ordinary skill in the art before the effective filling date of the invention to apply the teachings of Tsaur to the teachings of Park in order to achieve the effect of protecting internal circuit [0005, Tsaur]. In doing so, a target filter[0327] circuit disposed at a predetermined position in a circuit layout; a plurality of first wires(EL1/EL2/EL3) in a first metal layer(BML1/BML2/BML3), for respectively and electrically coupling the first optional element to a plurality of first external nodes[0098] outside the first circuit region wherein the plurality of second wires(EL1/EL2/EL3) are for respectively and electrically coupling the first external nodes[0015 of Tsaur], Re claim 10 Park and Tsaur disclose the integrated circuit according to claim 9, wherein the first optional component is not higher than the first metal layer(BML1/BML2/BML3) in position. Re claim 11 Park and Tsaur disclose the integrated circuit according to claim 9, wherein the target filter[0327] circuit further includes a second optional element, and in response to the first optional element being the first resistor[0184], the second optional element is a second finFET, in response to the first optional element being the first finFET, the second optional element is a second resistor. Re claim 12 Park and Tsaur disclose the integrated circuit of claim 11, wherein the second optional component is disposed in the first circuit region without overlapping with the first optional component, and the integrated circuit further comprises: a plurality of third wires(EL1/EL2/EL3) located in the first metal layer(BML1/BML2/BML3), and respectively used for electrically connecting the second optional element to a plurality of second external nodes[0015 of Tsaur] outside the first circuit region; and a plurality of fourth wires(EL1/EL2/EL3) located in the second metal layer(BML1/BML2/BML3) and respectively electrically connected to the plurality of second external nodes[0015 of Tsaur], wherein the fourth wires(EL1/EL2/EL3) are disposed around the first circuit region without overlapping with the plurality of second wires(EL1/EL2/EL3), wherein the capacitor(Cst) is disposed above the second optional component. Re claim 13 Park and Tsaur disclose the integrated circuit according to claim 12, wherein the second optional component is not higher than the first metal layer(BML1/BML2/BML3) in position. Re claim 14 Park and Tsaur disclose the integrated circuit according to claim 9, wherein a part of the plurality of second circuits is disposed at a first side of the first circuit region, and another part of the plurality of second wires(EL1/EL2/EL3) is arranged at a second side of the first circuit region. Re claim 15 Park and Tsaur disclose the integrated circuit according to claim 9, wherein a quantity of the at least one third metal layer(BML1/BML2/BML3) is one, two, three, four, or five. Re claim 16 Park and Tsaur disclose the integrated circuit according to claim 9, wherein a first circuit region is a capacitor(Cst) reserved region. Response to Arguments Applicant’s arguments with respect to claim 9-16 have been considered but are moot because the arguments do not apply to any of the references being used in the current rejection. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to PATRICIA D VALENZUELA whose telephone number is (571)272-9242. The examiner can normally be reached Monday-Friday 10am-6pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Partridge can be reached at 571-270-1402. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /PATRICIA D VALENZUELA/Primary Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Dec 06, 2022
Application Filed
Dec 23, 2025
Non-Final Rejection mailed — §103
Mar 20, 2026
Response Filed
Jun 11, 2026
Non-Final Rejection mailed — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12677712
SEMICONDUCTOR PACKAGE HAVING MULTIPLE REDISTRIBUTION LAYERS AND METHOD OF MAKING THE SAME
3y 0m to grant Granted Jul 07, 2026
Patent 12677656
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
2y 11m to grant Granted Jul 07, 2026
Patent 12672539
THIN FILM RESISTOR, THERMISTOR AND METHOD OF PRODUCING THE SAME
3y 0m to grant Granted Jun 30, 2026
Patent 12666951
SEMICONDUCTOR DEVICE
3y 1m to grant Granted Jun 23, 2026
Patent 12666952
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
3y 1m to grant Granted Jun 23, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

2-3
Expected OA Rounds
90%
Grant Probability
92%
With Interview (+2.1%)
2y 2m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 717 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month