Prosecution Insights
Last updated: April 19, 2026
Application No. 18/075,774

IMAGE SENSOR

Non-Final OA §103
Filed
Dec 06, 2022
Examiner
NARAGHI, ALI
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Visera Technologies Company Limited
OA Round
3 (Non-Final)
86%
Grant Probability
Favorable
3-4
OA Rounds
2y 8m
To Grant
93%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allow Rate
666 granted / 771 resolved
+18.4% vs TC avg
Moderate +6% lift
Without
With
+6.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 8m
Avg Prosecution
24 currently pending
Career history
795
Total Applications
across all art units

Statute-Specific Performance

§101
1.1%
-38.9% vs TC avg
§103
61.6%
+21.6% vs TC avg
§102
19.0%
-21.0% vs TC avg
§112
13.1%
-26.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 771 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 03/19/2026 has been entered. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1-4,6-7 is/are rejected under 35 U.S.C. 103 as being unpatentable over Ai et al (US Pub No. 20210391363), in view of Kawasaki (US Pub No. 20090261440), in view of Kim et al (US Pub No. 2021020198), Lin et al (US Pub No. 20170207258). With respect to claim 1, Ai et al discloses a plurality of groups of autofocus sensor units (Fig.1D); wherein each of the groups of autofocus sensor units comprises a plurality of sensing portions (105-1,2), a color filter layer (139-R,G) disposed on the sensing portions, and a plurality of micro-lenses (top semicircular structures,143-1,2,141) disposed on the color filter layer and correspondingly above the plurality of sensing portions; a joint seam between the micro-lenses within one of the groups of autofocus sensor units (between 143-1 and 143-2) has a first depth (Fig.1D), furthermore, Ai discloses a micro-lens base (a rectangle structure below an abstract line connecting the end points of the semicircular structures,Fig.1D) disposed between the color filter layer and the plurality of micro- lenses (Fg.1D), wherein a portion of the micro-lens base has a planar top surface (because of the abstract line extends all the way) spanning across and extending beyond the plurality of micro-lenses (Fig.1D). However, Ai does not explicitly disclose and a gap between the micro-lenses of the plurality of groups of autofocus sensor units has a second depth, wherein the second depth is larger than the first depth; a top film disposed conformally on the plurality of micro-lenses. On the other hand, Kawasaki discloses and a gap (where D3 is located,Fig.1A) between the micro-lenses of the plurality of groups of autofocus sensor units (Fig.1A) has a second depth (Fig.1A), wherein the second depth is larger than the first depth (where D1 is pointed at). It would have been obvious to one of ordinary skill in the art at the time of the filing of the invention to modify Ai et al according to the teachings of the Kawasaki to have gap between the micro-lenses of the plurality of groups of autofocus sensor units has a second depth, wherein the second depth is larger than the first depth, in order to have transistors in between photosensors for processing light absorbed. Furthermore, "[W]here the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation." In re Aller, 220 F.2d 454, 456, 105 USPQ 233, 235 (CCPA 1955). However, the arts cited above do not explicitly disclose a top film disposed conformally on the plurality of micro-lenses. On the other hand, Kim et al discloses a top film (190,Fig.4) disposed conformally on the plurality of micro-lenses (such as 182). It would have been obvious to one of ordinary skill in the art at the time of the filing of the invention to modify the arts cited above according to the teachings of the Kim et al such that top film disposed conformally on the plurality of micro-lenses, in order to improve light extraction for better picture quality. However, the arts cited above do not explicitly disclose that the planar top surface extends plurality of microlenses. On the other hand, Lin et al discloses that the planar top surface (bottom portion of 30 not included in the semi circles,Fig.1) extends plurality of microlenses (Fig.1). It would have been obvious to one of ordinary skill in the art at the time of the filing of the invention to modify the arts cited above according to the teachings of the Lin et al such that the base portion extend beyond array of microlenses, in order to protect the layers formed below the base or as a design choice. With respect to claim 2, Ai et al discloses wherein the plurality of sensing portions are embedded within a substrate (101). With respect to claim 3, Ai et al discloses wherein the substrate further comprises a plurality of deep trench isolation structures separating the plurality of sensing portions (115-2,115-3,117). With respect to claim 4, Ai et al discloses further comprises a partition grid structure (145) within the color filter layer (139), wherein the partition grid structure separates each of the groups of autofocus sensor units (151 from 152). With respect to claim 6, Kawasaki discloses wherein a portion of a collective structure of the micro-lenses and the top film within the joint seam has a first radius of curvature (where D1’ is pointed,Fig.1A), a different portion of a collective structure of the micro-lenses and the top film within the gap has a second radius of curvature (from the trench D3’ to top of 32). However, Kawasaki does not explicitly disclose and the first radius of curvature is larger than the second radius of curvature. On the other hand, it would have been obvious to one of ordinary skill in the art to have the first radius greater than the second radius , in order to lessen image cross talk between pixels of the same color. Furthermore, "[W]here the general conditions of a claim are disclosed in the prior art, it is not inventive to discover the optimum or workable ranges by routine experimentation." In re Aller, 220 F.2d 454, 456, 105 USPQ 233, 235 (CCPA 1955). With respect to claim 7, Kawasaki et al discloses wherein the micro-lenses within each of the groups of autofocus sensor units are spaced from each other (Fig.1A), adjoining each other, or overlapping each other. Claim(s) 5,8 is/are rejected under 35 U.S.C. 103 as being unpatentable over Ai et al (US Pub No. 20210391363), in view of Kawasaki (US Pub No. 20090261440), in view of Kim et al (US Pub No. 2021020198), in view of Pang et al (US Pub No. 20200045223), Lin et al (US Pub No. 20170207258). With respect to claim 5, the arts cited above do not explicitly disclose further comprises a light shielding structure embedded within the partition grid structure. On the other hand, Pang et al discloses a light shielding structure embedded within the partition grid structure. On the other Pang et al discloses a light shielding structure (208,Fig.3) embedded within the partition grid structure (207). It would have been obvious to one of ordinary skill in the art at the time of the filing of the invention to modify the arts cited above according to the teachings of the Pang et al such that a light shielding structure embedded within the partition grid structure, in order to prevent light interference from adjacent pixels, thereby improve the picture quality. With respect to claim 8, the arts cited above do not explicitly disclose wherein a refractive index of the top film is lower than a refractive index of the micro-lenses. On the other hand, Pang et al discloses wherein a refractive index of the top film (201,Fig.2) is lower than a refractive index of the micro-lenses (Para 23). It would have been obvious to one of ordinary skill in the art at the time of filing of the invention to modify the arts cited above according to the teachings of Pang et al such that a refractive index of the top film is lower than a refractive index of the micro-lenses, in order to protect the lenses and also improve picture quality. Response to Arguments Applicant’s arguments with respect to claim(s) 1-8 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to ALI N NARAGHI whose telephone number is (571)270-5720. The examiner can normally be reached 10am-6pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Marlon Fletcher can be reached at 571-272-2063. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ALI NARAGHI/Primary Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Dec 06, 2022
Application Filed
Jul 25, 2025
Non-Final Rejection — §103
Nov 06, 2025
Response Filed
Nov 22, 2025
Final Rejection — §103
Jan 26, 2026
Notice of Allowance
Jan 26, 2026
Response after Non-Final Action
Feb 05, 2026
Response after Non-Final Action
Mar 19, 2026
Request for Continued Examination
Mar 25, 2026
Response after Non-Final Action
Mar 29, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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CONTACT ETCH STOP LAYER FOR A PIXEL SENSOR
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Patent 12604748
CAPACITOR PADS AND METHODS OF MANUFACTURING THE SAME
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Patent 12604553
IMAGE SENSORS INCLUDING PIXEL ISOLATION STRUCTURE INCLUDING DOUBLE TRENCH
2y 5m to grant Granted Apr 14, 2026
Patent 12604775
SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE
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2y 5m to grant Granted Apr 07, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
86%
Grant Probability
93%
With Interview (+6.3%)
2y 8m
Median Time to Grant
High
PTA Risk
Based on 771 resolved cases by this examiner. Grant probability derived from career allow rate.

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