Prosecution Insights
Last updated: July 17, 2026
Application No. 18/076,599

SEMICONDUCTOR MEMORY DEVICE

Final Rejection §112
Filed
Dec 07, 2022
Priority
Feb 16, 2022 — RE 10-2022-0020398
Examiner
CHOU, SHIH TSUN A
Art Unit
2800
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
2 (Final)
77%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 77% — above average
77%
Career Allowance Rate
357 granted / 466 resolved
+8.6% vs TC avg
Strong +18% interview lift
Without
With
+17.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
37 currently pending
Career history
500
Total Applications
across all art units

Statute-Specific Performance

§103
81.9%
+41.9% vs TC avg
§102
7.3%
-32.7% vs TC avg
§112
10.6%
-29.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 466 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of the first paragraph of 35 U.S.C. 112(a): (a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention. The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112: The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention. Claims 1-20 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention. Amended claim 1 recites the limitations “wherein an entirety of the lower interface layer is doped with impurities of a first conductive type” and “wherein an entirety of the upper interface layer is and doped with impurities of a second conductive type other than the first conductive type”. Amended claim 11 recites the limitations “wherein an entirety of the lower interface layer is doped with impurities of a first conductive type” and “wherein an entirety of the upper interface layer is doped with impurities of a second conductive type other than the first conductive type”. Amended claim 18 recites the limitations “wherein an entirety of the lower interface layer is doped with n-type impurities that are metal atoms” and “wherein an entirety of the upper interface layer is doped with p-type impurities that are metal atoms”. These limitations were not described in the application as originally filed and constitute new matter. The application as originally filed only describes the lower interface layer and the upper interface layer are doped with impurities. See paragraph [0065] of the specification of the instant application. The application as originally filed does not describe that the entire lower interface layer is doped with impurities; the application as originally filed does not describe that the entire upper interface layer is doped with impurities. Here, it is well known in the semiconductor device manufacturing that a layer can be doped with impurities for the entire layer (for example, by mixing impurities in the depositing gas for the entire duration of a chemical vapor deposition process), or a layer can be doped partially (for example, only at the upper surface of the layer by a surface implantation process). The instant application did not specify that the entire lower interface layer and the entire upper interface layer are doped with impurities. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHIH TSUN A CHOU whose telephone number is (408)918-7583. The examiner can normally be reached M-F 8:00-16:00 Arizona Time. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Lynne Gurley can be reached at (571) 272-1670. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SHIH TSUN A CHOU/Primary Examiner, Art Unit 2811
Read full office action

Prosecution Timeline

Show 1 earlier event
Jun 02, 2025
Non-Final Rejection mailed — §112
Jul 09, 2025
Examiner Interview Summary
Jul 09, 2025
Applicant Interview (Telephonic)
Sep 02, 2025
Response Filed
Jun 22, 2026
Examiner Interview (Telephonic)
Jun 26, 2026
Final Rejection mailed — §112
Jul 16, 2026
Applicant Interview (Telephonic)
Jul 16, 2026
Examiner Interview Summary

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12666615
SEMICONDUCTOR DEVICE
3y 5m to grant Granted Jun 23, 2026
Patent 12653024
SEMICONDUCTOR DEVICE AND METHOD FORMING THE SAME
4y 2m to grant Granted Jun 09, 2026
Patent 12652968
SEMICONDUCTOR DEVICE
3y 6m to grant Granted Jun 09, 2026
Patent 12652809
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
3y 5m to grant Granted Jun 09, 2026
Patent 12648364
ENCASPULATED MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE
3y 2m to grant Granted Jun 02, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
77%
Grant Probability
94%
With Interview (+17.5%)
2y 5m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 466 resolved cases by this examiner. Grant probability derived from career allowance rate.

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