Tech Center 2800 • Art Units: 2811
This examiner grants 76% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18231734 | INTERFACIAL NITRIDATION FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18214755 | VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18509307 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18218926 | TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS | Non-Final OA | International Business Machines Corporation |
| 18317951 | MRAM DEVICE WITH TRAPEZOID SHAPED ELECTRODES | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18317989 | MRAM DEVICE WITH HEXAGONAL SHAPED ELECTRODES | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 17935030 | LOCAL LINE EXTENSION FOR ENLARGED VIA-TO-LINE CONTACT AREA | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 17948951 | Boron Surface Passivation of Phase Change Memory Material | Non-Final OA | International Business Machines Corporation |
| 17944437 | BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18531089 | BACK-END ACTIVE DEVICE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18363542 | CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING CARBON-BASED LAYER AND METHOD OF MAKING THE SAME | Non-Final OA | WESTERN DIGITAL TECHNOLOGIES, INC., |
| 18238291 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE | Non-Final OA | Micron Technology, Inc. |
| 17797779 | Laser Lift-Off Processing System Including Metal Grid | Final Rejection | Lumileds LLC |
| 18466868 | MAGNETIC MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18542996 | INTERCONNECT SUBSTRATE, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR APPARATUS | Non-Final OA | SHINKO ELECTRIC INDUSTRIES CO., LTD. |
| 18163272 | RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH COMPOUND NON-REACTIVE ELECTRODES | Non-Final OA | TetraMem Inc. |
| 18352269 | SEMICONDUCTOR STRUCTURE | Non-Final OA | United Microelectronics Corp. |
| 18221385 | RESISTIVE SWITCHING DEVICE AND FABRICATION METHOD THEREOF | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18074533 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18175475 | MAGNETIC SHIELDS FOR INTEGRATED CIRCUITS | Non-Final OA | GlobalFoundries Singapore Pte. Ltd. |
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