Prosecution Insights
Last updated: April 19, 2026
Application No. 18/080,024

SEMICONDUCTOR DEVICE INCLUDING A DUMMY POWER PAD AND A PAD PLACEMENT METHOD THEREOF

Non-Final OA §103
Filed
Dec 13, 2022
Examiner
ZHU, SHENG-BAI
Art Unit
2897
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
3 (Non-Final)
63%
Grant Probability
Moderate
3-4
OA Rounds
2y 11m
To Grant
67%
With Interview

Examiner Intelligence

Grants 63% of resolved cases
63%
Career Allow Rate
441 granted / 705 resolved
-5.4% vs TC avg
Minimal +5% lift
Without
With
+4.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
59 currently pending
Career history
764
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
66.2%
+26.2% vs TC avg
§102
21.5%
-18.5% vs TC avg
§112
10.7%
-29.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 705 resolved cases

Office Action

§103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Detailed Action Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 10/21/2025 has been entered. Claim Rejections – 35 U.S.C. 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claims 1 and 7 rejected under 35 U.S.C. 103 as being unpatentable over Song (U.S. Patent Pub. No. 2008/0164324) of record, in view of Jung (U.S. Patent Pub. No. 2010/0308472) of record, in view of Voldman (U.S. Patent Pub. No. 2007/0075373) of record, in view of Kirihata (U.S. Patent No. 6,831,866). Regarding Claim 1 FIG. 4 of Song discloses a semiconductor device, comprising: at least one signal pad (63+70) comprising power metal lines and configured to exchange an input/output signal with an input/output circuit [0027]; and a dummy power pad (69) disposed adjacent to the at least one signal pad, wherein the dummy power pad includes a first ESD protection circuit (91) connected to at least one of the power metal lines (81) ,a dummy ground pad (68) disposed adjacent to the at least one signal pad, wherein the dummy power pad and the dummy ground pad are disposed in pairs and adjacent to each other. Song is silent with respect to the power metal lines form power metal rings; “the power metal rings include a first power metal ring for providing a power supply voltage”; the first ESD protection circuit includes “a first clamp circuit” and “the first clamp circuit includes a transistor having a first end directly connected to the first power metal ring”. FIG. 2 of Jung discloses a similar semiconductor device, wherein the power metal lines form power metal rings (VDD/VSS POWER-BUS); the power metal rings include a first power metal ring for providing a power supply voltage (VDD). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Jung. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of improving ESD protection (electrostatic shielding). Song as modified by Jung is silent with respect to the first ESD protection circuit includes “a first clamp circuit” and “the first clamp circuit includes a transistor having a first end directly connected to the first power metal ring”. FIG. 6 of Voldman discloses a similar semiconductor device, comprising a dummy power pad (610), wherein the dummy power pad includes a first ESD protection circuit that is a first clamp circuit (500) connected to at least one of the power metal rings (110). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Voldman. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of protecting semiconductor circuits from ESD ([0001] of Voldman). Song as modified by Jung and Voldman is silent with respect to “the first clamp circuit includes a transistor having a first end directly connected to the first power metal ring”. FIG. 2 of Kirihata discloses a similar semiconductor device, comprising a dummy power pad (200), wherein the first clamp circuit includes a transistor (212) having a first end directly connected to the first power metal ring (VDD). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Kirihata. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of improving performance (Col. 1, Lines 33-48 of Kirihata). Regarding Claim 7 FIG. 4 of Song discloses the dummy ground pad includes a second ESD protection circuit connected to at least one of the power metal rings. FIG. 6 of Voldman discloses the second ESD protection circuit comprises a second clamp circuit connected to at least one of the power metal rings. Claim 1 rejected under 35 U.S.C. 103 as being unpatentable over Song, in view of Jung, in view of Zuo (U.S. Patent No. 11,206,392), in view of Sasaki (U.S. Patent Pub. No. 2012/0140366) Regarding Claim 1 FIG. 4 of Song discloses a semiconductor device, comprising: at least one signal pad (63+70) comprising power metal lines and configured to exchange an input/output signal with an input/output circuit [0027]; and a dummy power pad (69) disposed adjacent to the at least one signal pad, wherein the dummy power pad includes a first ESD protection circuit (91) connected to at least one of the power metal lines (81) ,a dummy ground pad (68) disposed adjacent to the at least one signal pad, wherein the dummy power pad and the dummy ground pad are disposed in pairs and adjacent to each other. Song is silent with respect to the power metal lines form power metal rings; “the power metal rings include a first power metal ring for providing a power supply voltage”; the first ESD protection circuit includes “a first clamp circuit” and “the first clamp circuit includes a transistor having a first end directly connected to the first power metal ring”. FIG. 2 of Jung discloses a similar semiconductor device, wherein the power metal lines form power metal rings (VDD/VSS POWER-BUS); the power metal rings include a first power metal ring for providing a power supply voltage (VDD). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Jung. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of improving ESD protection (electrostatic shielding). Song as modified by Jung is silent with respect to the first ESD protection circuit includes “a first clamp circuit” and “the first clamp circuit includes a transistor having a first end directly connected to the first power metal ring”. FIG. 3 of Zuo discloses a similar semiconductor device, comprising a dummy power pad (320), wherein the dummy power pad includes a first clamp circuit (336) connected to at least one of the power metal rings, and wherein the first clamp circuit includes a transistor having a first end directly connected to the first power metal ring. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Zuo. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of limiting voltage spikes to protect devices. Song as modified by Jung and Zuo is silent with respect to the first clamp circuit provides ESD protection. FIG. 6 of Sasaki discloses a similar semiconductor device, the first clamp circuit (4) includes a transistor (10) having a first end directly connected to the first power metal ring (5) to provide ESD protection [0003]. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Sasaki. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of ensuring ESD robustness ([0003] of Sasaki). Claim 2 rejected under 35 U.S.C. 103 as being unpatentable over Song, Jung, Voldman and Kirihata, in view of Ker (U.S. Patent Pub. No. 2011/0198678) of record. Regarding Claim 2 Song as modified by Jung, Voldman and Kirihata discloses Claim 1. Song as modified by Jung, Voldman and Kirihata is silent with respect to “a second power metal ring for providing an input/output power supply voltage; and a second ground metal ring for providing an input/output ground voltage”. FIG. 1 of Ker discloses a similar semiconductor device, comprising a first power metal ring (VDD1) for providing a power supply voltage; a first ground metal ring (VSS1) for providing a ground voltage; a second power metal ring (VDD2) for providing an input/output power supply voltage; and a second ground metal ring (VSS2) for providing an input/output ground voltage. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Ker. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of improving ESD protection ([0007] of Ker). Claim 3 rejected under 35 U.S.C. 103 as being unpatentable over Song, Jung, Voldman, Kirihata and Ker, in view of Miller (U.S. Patent No. 5,946,177) of record. Regarding Claim 3 Song as modified by Jung, Voldman, Kirihata and Ker discloses Claim 2. Song as modified by Jung, Voldman, Kirihata and Ker is silent with respect to “a capacitor connected between the first end of the transistor and a gate of the transistor; and a resistor connected to the gate of the transistor and the first ground metal ring or the second ground metal ring”. FIG. 4 of Miller discloses a similar semiconductor device, comprising a capacitor (176) connected between the first end of the transistor (179) and a gate of the transistor; and a resistor (177) connected to the gate of the transistor and the first ground metal ring (150) or the second ground metal ring. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Miller. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of significant savings in the overall clamp circuit area (Col. 8, Lines 64-67 of Miller). Claims 4 and 5 rejected under 35 U.S.C. 103 as being unpatentable over Song, Jung, Voldman, Kirihata and Ker, in view of Hung (U.S. Patent Pub. No. 2016/0284692) of record. Regarding Claim 4 Song as modified by Jung, Voldman, Kirihata and Ker discloses Claim 2. Song as modified by Jung, Voldman, Kirihata and Ker is silent with respect to “the signal pad includes a diode circuit connected to one of the first power metal ring and the second power metal ring and one of the first ground metal ring and the second ground metal ring”. FIG. 2 of Hung discloses a similar semiconductor device, wherein the signal pad includes a diode circuit (220/230) connected to one of the first power metal ring (211) and the second power metal ring and one of the first ground metal ring (213) and the second ground metal ring. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Hung. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of providing protection. Regarding Claim 5 FIG. 2 of Hung discloses a first diode (220) having a cathode connected to the first power metal ring or the second power metal ring (211); and a second diode (230) having an anode connected to the first ground metal ring or the second ground metal ring (213), wherein the anode of the first diode is connected to a cathode of the second diode. Claim 9 rejected under 35 U.S.C. 103 as being unpatentable over Balatsos (U.S. Patent Pub. No. 2009/0049321) of record, in view of Choi (KR 20110033328) of record, in view of Sasaki. Regarding Claim 9 FIG. 1 of Balatsos discloses a semiconductor device, comprising: a core logic unit (102) configured to receive a power and configured to receive and process an input signal to generate an output signal; signal pads (104) configured to transmit the input signal to the core logic unit or output the output signal from the core logic unit to an outside of the semiconductor device; a power/ground pad (106) configured to transfer the power provided from a power rail to the core logic unit. Balatsos is silent with respect to “a dummy power/ground pad disposed at a position of a filler pad”; “the dummy power/ground pad does not function exchange the power, the input signal, and the output signal with the core logic unit”; “the dummy power/ground pad is disposed adjacent to the signal pads, and wherein the dummy power/ ground pad are disposed in pairs and adjacent to each other”; “the power rail includes a plurality of power metal rings, wherein the plurality of power metal rings include a first power metal ring for providing a power supply voltage, and a first ground metal ring for providing a ground voltage” and “a clamp circuit comprises a transistor having a first end directly connected to the first power metal ring”. FIG. 10 of Sasaki discloses a similar semiconductor device, wherein the power rail includes a plurality of power metal rings, wherein the plurality of power metal rings include a first power metal ring (30) for providing a power supply voltage (VDD), and a first ground metal ring (31) for providing a ground voltage (GND), and a clamp circuit (4) comprises a transistor (10, FIG. 8) having a first end directly connected to the first power metal ring (5) to provide ESD protection [0003]. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Song, as taught by Sasaki. The ordinary artisan would have been motivated to modify Song in the above manner for purpose of ensuring ESD robustness ([0003] of Sasaki). Balatsos as modified by Sasaki is silent with respect to “a dummy power/ground pad disposed at a position of a filler pad”; “the dummy power/ground pad does not function exchange the power, the input signal, and the output signal with the core logic unit”; “the dummy power/ground pad is disposed adjacent to the signal pads, and wherein the dummy power/ ground pad are disposed in pairs and adjacent to each other”. FIG. 2 of Choi discloses a similar semiconductor device, comprising a dummy power/ground pad (241/242) disposed at a position of a filler pad, wherein the dummy power/ground pad does not function exchange the power, the input signal, and the output signal with the core logic unit, and wherein the dummy power/ground pad is disposed adjacent to the signal pads (230), and wherein the dummy power/ ground pad are disposed in pairs and adjacent to each other, wherein the power rail includes a plurality of power metal rings, wherein the plurality of power metal rings include a first power metal ring for providing a power supply voltage (VDD), and a first ground metal ring for providing a ground voltage (VSS). It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Balatsos, as taught by Choi. The ordinary artisan would have been motivated to modify Balatsos in the above manner for purpose of improving ESD protection performance (see, e.g., [0028] of Song). Claims 11-12 rejected under 35 U.S.C. 103 as being unpatentable over Balatsos, Sasaki and Choi, in view of Ker (U.S. Patent Pub. No. 2011/0198678) of record. Regarding Claim 11 Balatsos as modified by Sasaki and Choi discloses Claim 9. Balatsos as modified by Sasaki and Choi is silent with respect to “a second power metal ring for providing an input/output power supply voltage; and a second ground metal ring for providing an input/output ground voltage”. FIG. 1 of Ker discloses a similar semiconductor device, comprising a first power metal ring (VDD1) for providing a power supply voltage; a first ground metal ring (VSS1) for providing a ground voltage; a second power metal ring (VDD2) for providing an input/output power supply voltage; and a second ground metal ring (VSS2) for providing an input/output ground voltage. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Balatsos, as taught by Ker. The ordinary artisan would have been motivated to modify Balatsos in the above manner for purpose of improving ESD protection ([0007] of Ker). Regarding Claim 12 FIG. 2 of Choi discloses the dummy power/ground pad is connected to the power metal ring. FIG. 1 of Ker discloses the plurality of power metal rings include a clamp circuit. Claim 13 rejected under 35 U.S.C. 103 as being unpatentable over Balatsos, Sasaki Choi and Ker, in view of Miller. Regarding Claim 13 Balatsos as modified by Sasaki, Choi and Ker discloses Claim 12. Balatsos as modified by Sasaki, Choi and Ker is silent with respect to “a capacitor connected between the first end of the transistor and a gate of the transistor; and a resistor connecting the gate of the transistor to the first ground metal ring or the second ground metal ring”. FIG. 6 of Miller discloses a similar semiconductor device, comprising a transistor (227) connected between the first end of the transistor and a gate of the transistor (235); and a resistor (229) connecting the gate of the transistor to the first ground metal ring (210) or the second ground metal ring. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Balatsos, as taught by Miller. The ordinary artisan would have been motivated to modify Balatsos in the above manner for purpose of significant savings in the overall clamp circuit area (Col. 8, Lines 64-67 of Miller). Claims 14 and 15 rejected under 35 U.S.C. 103 as being unpatentable over Balatsos, Sasaki, Choi and Ker, in view of Hung. Regarding Claim 14 Balatsos as modified by Sasaki, Choi and Ker discloses Claim 11. Balatsos as modified by Sasaki, Choi and Ker is silent with respect to “the signal pad includes a diode circuit connected to one of the first power metal ring and the second power metal ring and one of the first ground metal ring and the second ground metal ring”. FIG. 2 of Hung discloses a similar semiconductor device, wherein the signal pad includes a diode circuit (220/230) connected to one of the first power metal ring (211) and the second power metal ring and one of the first ground metal ring (213) and the second ground metal ring. It would have been obvious to one of ordinary skill in the art before the effective filing of the claimed invention to modify the device of Balatsos, as taught by Hung. The ordinary artisan would have been motivated to modify Balatsos in the above manner for purpose of providing protection. Regarding Claim 15 FIG. 2 of Hung discloses a first diode (220) having a cathode connected to the first power metal ring or the second power metal ring (211); and a second diode (230) having an anode connected to the first ground metal ring or the second ground metal ring (213), and a cathode connected to the signal input pad (212). Pertinent Art US 20200083705 and 20110198678 each discloses the first clamp circuit includes a transistor having a first end directly connected to the first power metal ring to provide ESD protection. Pertinent art also includes US 20120226929 and 20070018193. Response to Arguments Applicant’s arguments with respect to Claim 1 have been considered but are moot because the arguments do not apply to any of the references being used in the current rejection. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to SHENG-BAI ZHU whose telephone number is (571)270-3904. The examiner can normally be reached on 11am – 7pm EST. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Chad Dicke can be reached on (571)270-7996. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SHENG-BAI ZHU/Primary Examiner, Art Unit 2897
Read full office action

Prosecution Timeline

Dec 13, 2022
Application Filed
Mar 23, 2025
Non-Final Rejection — §103
Apr 04, 2025
Interview Requested
Apr 29, 2025
Applicant Interview (Telephonic)
Apr 29, 2025
Examiner Interview Summary
Jun 27, 2025
Response Filed
Jul 18, 2025
Final Rejection — §103
Aug 21, 2025
Examiner Interview Summary
Aug 21, 2025
Applicant Interview (Telephonic)
Oct 21, 2025
Request for Continued Examination
Oct 30, 2025
Response after Non-Final Action
Feb 01, 2026
Non-Final Rejection — §103
Feb 09, 2026
Interview Requested
Feb 25, 2026
Examiner Interview Summary
Feb 25, 2026
Applicant Interview (Telephonic)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604535
SEMICONDUCTOR DEVICE HAVING SERIALLY CONNECTED TRANSISTORS WITH DISCONNECTED BODIES, AND METHOD OF MANUFACTURING THE SAME
2y 5m to grant Granted Apr 14, 2026
Patent 12588294
LOW-LEAKAGE ESD PROTECTION CIRCUIT AND OPERATING METHOD THEREOF
2y 5m to grant Granted Mar 24, 2026
Patent 12588279
ARRAYED SWITCH CIRCUITRY SYSTEM AND SWITCHING CIRCUIT
2y 5m to grant Granted Mar 24, 2026
Patent 12563841
ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT
2y 5m to grant Granted Feb 24, 2026
Patent 12563715
STACKED RANDOM-ACCESS-MEMORY WITH COMPLEMENTARY ADJACENT CELLS
2y 5m to grant Granted Feb 24, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

AI Strategy Recommendation

Get an AI-powered prosecution strategy using examiner precedents, rejection analysis, and claim mapping.
Powered by AI — typically takes 5-10 seconds

Prosecution Projections

3-4
Expected OA Rounds
63%
Grant Probability
67%
With Interview (+4.8%)
2y 11m
Median Time to Grant
High
PTA Risk
Based on 705 resolved cases by this examiner. Grant probability derived from career allow rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month